2V7002LT1G
Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-23, Surface Mount
- Manufacturer: ONSEMI
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Pow
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 225mW
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-23
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 115mA
- Drain Source On State Resistance: 7.5ohm
- Gate Source Threshold Voltage Max: 1V
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.064 € |
| Current stock | 1000+ |
| Lead time | 30 days |
2N7002L, 2V7002L ## Small Signal MOSFET **60 V, 115 mA, N−Channel SOT−23** ## **Features** - 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L) - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **MAXIMUM RATINGS** **www.onsemi.com V(BR)DSS RDS(on) MAX ID MAX** 7.5 @ 10 V, 60 V 115 mA 500 mA ~~PP~~ **Rating Symbol Value Unit N−Channel** 3 Drain−Source Voltage VDSS 60 Vdc ~~ee~~ Drain−Gate Voltage (RGS = 1.0 M ) VDGR 60 Vdc ~~«ee~~ Drain Current ID ± 115 mAdc − Continuous TC = 25 ° C (Note 1) ID ± 75 − Continuous TC = 100 ° C (Note 1) IDM ± 800 1 − Pulsed (Note 2) ~~eee~~ Gate−Source Voltage - ~~c~~ − Continuous VGS ± 20 Vdc 2 ~~tT~~ − Non−repetitive (tp ≤ 50 s) VGSM ± 40 Vpk **MARKING** 3 **THERMAL CHARACTERISTICS DIAGRAM Characteristic Symbol Max Unit** 1 ~~ee~~ Total Device Dissipation FR−5 Board(Note 3) TA = 25 ° C P ~~ee~~ D 225 mW > 2 702 M Thermal Resistance, Junction−to−AmbientDerate above 25 ° C R JA 5561.8 mW/ ° C/W ° C **CASE 318SOT−23** 1 ~~fff)”~~ GS **STYLE 21** Total Device Dissipation PD (Note 4) Alumina Substrate, TA = 25 ° C 300 mW 702 = Device Code Derate above 25 ° C 2.4 mW/ ° C M = Date Code* Thermal Resistance, Junction−to−Ambient R JA 417 ° C/W = Pb−Free Package ~~OT~~ Junction and Storage Temperature TJ, Tstg −55 to+150 ° C *Date Code orientation and/or position may(Note: Microdot may be in either location) ~~eeee eee~~ vary depending upon manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **ORDERING INFORMATION** 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. 3. FR−5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. |**Device**|**Package**|**Shipping**†| |---|---|---| |2N7002LT1G|SOT−23<br>(Pb−Free)|3000 Tape & Reel| |2N7002LT3G||10,000 Tape & Reel| |2V7002LT1G|SOT−23<br>(Pb−Free)|3000 Tape & Reel| |2V7002LT3G||10,000 Tape & Reel| |2N7002LT1H*||3000 Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *Not for new design. Publication Order Number: **2N7002L/D** **1** © Semiconductor Components Industries, LLC, 2013 **October, 2016 − Rev. 8** ## **2N7002L, 2V7002L** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS **(TA= 25°C unless otherwise not|**ELECTRICAL CHARACTERISTICS **(TA= 25°C unless otherwise not|ed)||||| |---|---|---|---|---|---|---| |**Characteristic**||**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||||| |Drain−Source Breakdown Voltage<br>(VGS= 0, ID= 10�Adc)||V(BR)DSS|60|−|−|Vdc| |Zero Gate Voltage Drain Current<br>TJ= 25°C<br>(VGS= 0, VDS= 60 Vdc)<br>TJ= 125°C||IDSS|−<br>−|−<br>−|1.0<br>500|�Adc| |Gate−Body Leakage Current, Forward<br>(VGS= 20 Vdc)||IGSSF|−|−|100|nAdc| |Gate−Body Leakage Current, Reverse<br>(VGS= −20 Vdc)||IGSSR|−|−|−100|nAdc| |**ON CHARACTERISTICS**(Note 5)||||||| |Gate Threshold Voltage<br>(VDS= VGS, ID= 250�Adc)||VGS(th)|1.0|−|2.5|Vdc| |On−State Drain Current<br>(VDS ≥2.0 VDS(on), VGS= 10 Vdc)||ID(on)|500|−|−|mA| |Static Drain−Source On−State Voltage<br>(VGS= 10 Vdc, ID= 500 mAdc)<br>(VGS= 5.0 Vdc, ID= 50 mAdc)||VDS(on)|−<br>−|−<br>−|3.75<br>0.375|Vdc| |Static Drain−Source On−State Resistance<br>(VGS= 10 V, ID= 500 mAdc)<br>TC= 25°C<br>TC= 125°C<br>(VGS= 5.0 Vdc, ID= 50 mAdc)<br>TC= 25°C<br>TC= 125°C||rDS(on)|−<br>−<br>−<br>−|−<br>−<br>−<br>−|7.5<br>13.5<br>7.5<br>13.5|Ohms| |Forward Transconductance<br>(VDS ≥2.0 VDS(on), ID= 200 mAdc)||gFS|80|−|−|mS| |**DYNAMIC CHARACTERISTICS**||||||| |Input Capacitance<br>(VDS= 25 Vdc, VGS= 0, f = 1.0 MHz)||Ciss|−|−|50|pF| |Output Capacitance<br>(VDS= 25 Vdc, VGS= 0, f = 1.0 MHz)||Coss|−|−|25|pF| |Reverse Transfer Capacitance<br>(VDS= 25 Vdc, VGS= 0, f = 1.0 MHz)||Crss|−|−|5.0|pF| |**SWITCHING CHARACTERISTICS**(Note 5)||||||| |Turn−On Delay Time|(VDD= 25 Vdc, ID �500 mAdc,<br>RG= 25�, RL= 50�, Vgen= 10 V)|td(on)|−|−|20|ns| |Turn−Off Delay Time||td(off)|−|−|40|ns| |**BODY−DRAIN DIODE RATINGS**||||||| |Diode Forward On−Voltage<br>(IS= 11.5 mAdc, VGS= 0 V)||VSD|−|−|−1.5|Vdc| |Source Current Continuous<br>(Body Diode)||IS|−|−|−115|mAdc| |Source Current Pulsed||ISM|−|−|−800|mAdc| 5. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. **www.onsemi.com** **2** **2N7002L, 2V7002L** ## **TYPICAL ELECTRICAL CHARACTERISTICS** **==> picture [491 x 393] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 1.0<br>1.8 T A = 25°C V DS = 10 V -�55°C 25°C<br>1.6 V GS = 10 V 0.8 125°C<br>1.4 9 V<br>1.2 0.6<br>8 V<br>1.0<br>7 V<br>0.8 0.4<br>6 V<br>0.6<br>5 V<br>0.4 0.2<br>0.2 4 V<br>3 V<br>0<br>0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10<br>VDS, DRAIN SOURCE VOLTAGE (VOLTS) VGS, GATE SOURCE VOLTAGE (VOLTS)<br>Figure 1. Ohmic Region Figure 2. Transfer Characteristics<br>2.4 1.2<br>2.2 1.05<br>2.0 VGS = 10 V 1.1 VDS = VGS<br>ID = 200 mA ID = 1.0 mA<br>1.8 1.10<br>1.6 1.0<br>1.4 0.95<br>1.2 0.9<br>1.0 0.85<br>0.8 0.8<br>0.6 0.75<br>0.4 0.7<br>-�60 -�20 +�20 +�60 +�100 +�140 -�60 -�20 +�20 +�60 +�100 +�140<br>T, TEMPERATURE (°C) T, TEMPERATURE (°C)<br>ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)<br>(NORMALIZED)<br>VGS(th), THRESHOLD VOLTAGE (NORMALIZED)<br>rDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE<br>**----- End of picture text -----**<br> **Figure 3. Temperature versus Static Drain−Source On−Resistance** **Figure 4. Temperature versus Gate Threshold Voltage** **www.onsemi.com** **3** **2N7002L, 2V7002L** ## **PACKAGE DIMENSIONS** **SOT−23 (TO−236)** CASE 318−08 ISSUE AR ||**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|**D**<br>**3**<br>**1**<br>**2**<br>**E**<br>**E**<br>**H**<br>~~as~~<br>~~|~~|0.25<br>**T**<br>=|0.25<br>**T**<br>=|0.25<br>**T**<br>=||NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>THE BASE MATERIAL.<br>4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,<br>PROTRUSIONS, OR GATE BURRS.<br>**MILLIMETERS**<br>**INCHES**|NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>THE BASE MATERIAL.<br>4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,<br>PROTRUSIONS, OR GATE BURRS.<br>**MILLIMETERS**<br>**INCHES**|NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>THE BASE MATERIAL.<br>4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,<br>PROTRUSIONS, OR GATE BURRS.<br>**MILLIMETERS**<br>**INCHES**|NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>THE BASE MATERIAL.<br>4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,<br>PROTRUSIONS, OR GATE BURRS.<br>**MILLIMETERS**<br>**INCHES**|NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>THE BASE MATERIAL.<br>4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,<br>PROTRUSIONS, OR GATE BURRS.<br>**MILLIMETERS**<br>**INCHES**|NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>THE BASE MATERIAL.<br>4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,<br>PROTRUSIONS, OR GATE BURRS.<br>**MILLIMETERS**<br>**INCHES**| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||||||||||||||||||||||||**L**||||||||**DIM**<br>**A**<br>**MIN**<br>**NOM**<br>**MAX**<br>**MIN**<br>0.89<br>1.00<br>1.11<br>0.035||0.039<br>**NOM**||0.044<br>**MAX**| ||||||||||||**e**|||**3X**|**b**||||**VIEW C**<br>**L1**||||||**VIEW C**||||||||**A1**<br>0.01<br>0.06<br>0.10<br>0.000<br>**b**<br>0.37<br>0.44<br>0.50<br>0.015<br>**c**<br>0.08<br>0.14<br>0.20<br>0.003||0.002<br>0.017<br>0.006||0.004<br>0.020<br>0.008| |||||||||**TOP VIEW**|||||||||||||||||||||||||**D**<br>2.80<br>2.90<br>3.04<br>0.110||0.114||0.120| ||||||||||||||||||||||||||||||||||**E**<br>1.20<br>1.30<br>1.40<br>0.047||0.051||0.055| |**A1**<br>**A**<br>**SEE VIEW C**<br>**SIDE VIEW**<br>~~a~~||||||||||||||||||||||||||**c**|||||||STYLE 21:<br>**e**<br>1.78<br>1.90<br>2.04<br>0.070<br>**L**<br>0.30<br>0.43<br>0.55<br>0.012<br>**L1**<br>2.10<br>2.40<br>2.64<br>0.083<br>**HE**<br>0.35<br>0.54<br>0.69<br>0.014<br>0<br>−−−<br>10<br>0<br>**T**<br>°<br>°<br>°||0.075<br>0.017<br>0.094<br>0.021<br>−−−||0.080<br>0.022<br>0.104<br>0.027<br>10<br>°| |||||||||||||||||||**END VIEW**|||||||||||||||PIN 1.<br>GATE||||| ||||||||||||||||||||||||||||||||||2.<br>SOURCE||||| ||||||||||||||||||||||||||||||||||3.<br>DRAIN||||| ||||||||||||||||||||||||||**RECOMMENDED**||||||||||||| |||||||||||||||||||||||**SOLDERING FOOTPRINT**|||||||||||||||| **==> picture [142 x 109] intentionally omitted <==** **----- Start of picture text -----**<br> 3X<br>2.90 r o 0.90<br>L o| cr<br>3X 0.80 J LLL 0.95<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br> ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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Updated at April 29, 2026
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