2V7002KT1G

2N7002K, 2V7002K 

## Small Signal MOSFET **60 V, 380 mA, Single, N−Channel, SOT−23** 

## **Features** 

- ESD Protected 

- Low RDS(on) 

## **www.onsemi.com** 

- Surface Mount Package 

- 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

|**V(BR)DSS**|**RDS(on) MAX**|**ID MAX**|
|---|---|---|
|60 V|1.6  @ 10 V|380 mA|
||2.5  @ 4.5 V||



## **SIMPLIFIED SCHEMATIC** 

## **Applications** 

- Low Side Load Switch 

**==> picture [131 x 101] intentionally omitted <==**

**----- Start of picture text -----**<br>
Gate 1<br>3 Drain<br>Source 2<br>(Top View)<br>**----- End of picture text -----**<br>


- Level Shift Circuits 

- DC−DC Converter 

- Portable Applications i.e. DSC, PDA, Cell Phone, etc. 

## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) 

|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise stated)|C unless otherwise stated)|C unless otherwise stated)||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Drain−to−Source Voltage|VDSS|60|V|
|Gate−to−Source Voltage|VGS|±20|V|
|Drain Current (Note 1)<br>Steady State 1 sq in Pad<br>TA= 25°C<br>TA= 85°C<br>~~eee~~|ID<br>~~eee~~|380<br>270<br>~~eee~~|mA<br>~~eee~~|
|Drain Current (Note 2)<br>Steady State Minimum Pad<br>TA= 25°C<br>TA= 85°C<br>~~or~~|ID<br>~~or~~|320<br>230<br>~~or~~|mA<br>~~or~~|
|Power Dissipation<br>Steady State 1 sq in Pad<br>Steady State Minimum Pad|PD|420<br>300|mW|
|Pulsed Drain Current (tp= 10 s)<br>|IDM<br>|5.0<br>~~e~~|A<br>~~e~~|
|Operating Junction and Storage<br>Temperature Range<br>~~SS~~|TJ, TSTG<br>~~SS~~|−55 to<br>+150<br>~~SSe~~|°C<br>~~SSe~~|
|Source Current (Body Diode)<br>~~SS~~|IS<br>~~SS~~|300<br>~~SSe~~<br>~~ee~~|mA<br>~~SSe~~<br>~~ee~~|
|Lead Temperature for Soldering Purposes<br>(1/8″from case for 10 s)<br><br>~~ee~~|TL<br><br>~~ee~~<br>~~ee~~|260<br>~~e~~<br>~~ee~~<br>~~ee~~<br>~~eee~~|°C<br>~~e~~<br>~~ee~~<br>~~ee~~<br>~~eee~~|
|Gate−Source ESD Rating<br>(HBM, Method 3015)<br>~~ee~~|ESD<br>~~ee~~<br>~~ee~~|2000<br>~~ee~~<br>~~ee~~<br>~~eee~~|V<br>~~ee~~<br>~~ee~~<br>~~eee~~|



**==> picture [172 x 195] intentionally omitted <==**

**----- Start of picture text -----**<br>
MARKING DIAGRAM<br>3 & PIN ASSIGNMENT<br>Drain<br>3<br>1<br>2<br>704 M<br>SOT−23<br>CASE 318<br>STYLE 21 1 2<br>Gate Source<br>704 = Specific Device Code*<br>M = Date Code*<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>*Specific Device Code, Date Code or overbar<br>orientation and/or location may vary depend-<br>ing upon manufacturing location. This is a<br>representation only and actual devices may<br>not match this drawing exactly.<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|2N7002KT1G|SOT−23<br>(Pb−Free)|3000 / Tape & Reel|
|2V7002KT1G|SOT−23<br>(Pb−Free)|3000 / Tape & Reel|



1. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu. 

2. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu. 

- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2007 **October, 2016 − Rev. 15** 

**2N7002K/D** 

**2N7002K, 2V7002K** 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Junction−to−Ambient − Steady State (Note 3)|R�JA|300|°C/W|
|Junction−to−Ambient − t≤5 s (Note 3)||92||
|Junction−to−Ambient − Steady State (Note 4)||417||
|Junction−to−Ambient − t≤5 s (Note 4)||154||



3. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu. 

4. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu. 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERIST**|**ICS**(TJ= 25°C un|less otherwise specified)|less otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V,|ID= 250�A|60|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ||||71||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 60 V|TJ= 25°C|||1|�A|
||||TJ= 125°C|||10||
|||VGS= 0 V,<br>VDS= 50 V|TJ= 25°C|||100|nA|
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=±20 V||||±10|�A|
|||VDS= 0 V, VGS=±10 V||||450|nA|
|||VDS= 0 V, VGS=±5.0 V||||150|nA|
|**ON CHARACTERISTICS**(Note 5)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||1.0||2.3|V|
|Negative Threshold Temperature<br>Coefficient|VGS(TH)/TJ||||4.0||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V, ID= 500 mA|||1.19|1.6|�|
|||VGS= 4.5 V, ID= 200 mA|||1.33|2.5||
|Forward Transconductance|gFS|VDS= 5 V, ID= 200 mA|||530||mS|
|**CHARGES AND CAPACITANCES**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1 MHz,<br>VDS= 20 V|||24.5|45|pF|
|Output Capacitance|COSS||||4.2|8.0||
|Reverse Transfer Capacitance|CRSS||||2.2|5.0||
|Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 10 V;<br>ID= 200 mA|||0.7||nC|
|Threshold Gate Charge|QG(TH)||||0.1|||
|Gate−to−Source Charge|QGS||||0.3|||
|Gate−to−Drain Charge|QGD||||0.1|||
|**SWITCHING CHARACTERISTICS, VGS**|**=  V**(Note 6)|||||||
|Turn−On Delay Time|td(ON)|VGS= 10 V, VDD= 25 V,<br>ID= 500 mA, RG= 25�|||12.2||ns|
|Rise Time|tr||||9.0|||
|Turn−Off Delay Time|td(OFF)||||55.8|||
|Fall Time|tf||||29|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 200 mA|TJ= 25°C||0.8|1.2|V|
||||TJ= 85°C||0.7|||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

5. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2% 

6. Switching characteristics are independent of operating junction temperatures 

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**2** 

**2N7002K, 2V7002K** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [491 x 619] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.6 1.2<br>VGS = 10 V 5.0 V<br>4.5 V<br>9.0 V<br>8.0 V 4.0 V<br>1.2<br>7.0 V<br>6.0 V 0.8<br>3.5 V<br>0.8<br>TJ = 25 ° C<br>3.0 V 0.4<br>0.4<br>2.5 V<br>TJ = 125 ° C TJ = −55 ° C<br>0 0<br>0 2 4 6 0 2 4 6<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>3.2 3.2<br>VGS = 4.5 V VGS = 10 V<br>2.8 TJ = 125 ° C 2.8<br>2.4 TJ = 85 ° C 2.4 TJ = 125 ° C<br>2.0 TJ = 25 ° C 2.0 TJ = 85 ° C<br>1.6 1.6 °<br>TJ = −55 ° C TJ = 25 C<br>1.2 1.2<br>TJ = −55 ° C<br>0.8 0.8<br>0.4 0.4<br>0 0<br>0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 1.0 1.2<br>ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Drain Current and Figure 4. On−Resistance vs. Drain Current and<br>Temperature Temperature<br>2.4 2.2<br>ID = 0.2 A<br>2.0 ID = 500 mA<br>1.8<br>VGS = 4.5 V<br>1.6<br>VGS = 10 V<br>1.4<br>1.2 ID = 200 mA<br>1.0<br>0.8<br>0.4 0.6<br>2 4 6 8 10 −50 −25 0 25 50 75 100 125 150<br>VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( ° C)<br>Figure 5. On−Resistance vs. Gate−to−Source Figure 6. On−Resistance Variation with<br>Voltage Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>) �<br>, DRAIN−TO−SOURCE<br>DS(on)<br>R RESISTANCE (NORMALIZED)<br>, DRAIN−TO−SOURCE RESISTANCE (<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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**2N7002K, 2V7002K** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [240 x 383] intentionally omitted <==**

**----- Start of picture text -----**<br>
30<br>Ciss<br>20<br>TJ = 25 ° C<br>VGS = 0 V<br>Coss<br>10<br>Crss<br>0<br>0 4 8 12 16 20<br>GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 7. Capacitance Variation<br>10<br>VGS = 0 V<br>1<br>TJ = 85 ° C TJ = 25 ° C<br>0.1<br>0.01<br>0.4 0.6 0.8 1.0 1.2<br>VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) 

**Figure 9. Diode Forward Voltage vs. Current** 

**==> picture [236 x 156] intentionally omitted <==**

**----- Start of picture text -----**<br>
5<br>TJ = 25 ° C<br>4 ID = 0.2 A<br>3<br>2<br>1<br>0<br>0 0.2 0.4 0.6 0.8<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


Qg, TOTAL GATE CHARGE (nC) 

**Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** 

**==> picture [242 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.5<br>2.4 ID = 250  � A<br>2.3<br>2.2<br>2.1<br>2.0<br>1.9<br>1.8<br>1.7<br>1.6<br>1.5<br>1.4<br>1.3<br>1.2<br>1.1<br>1.0<br>−50 −25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ° C)<br>, THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>


**Figure 10. Threshold Voltage with Temperature** 

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**4** 

**2N7002K, 2V7002K** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [492 x 376] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>Duty Cycle = 0.5<br>100 0.2<br>0.1<br>0.05<br>10 0.02<br>0.01<br>1<br>SINGLE PULSE<br>0.1<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, PULSE TIME (s)<br>Figure 11. Thermal Response − 1 sq in pad<br>1000<br>Duty Cycle = 0.5<br>0.2<br>100<br>0.1<br>0.05<br>0.02<br>10<br>0.01<br>1<br>SINGLE PULSE<br>0.1<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, PULSE TIME (s)<br>C/W) EFFECTIVE TRANSIENT<br> ( ° THERMAL RESISTANCE<br>JC(t)<br>�<br>R<br>C/W) EFFECTIVE TRANSIENT<br> ( ° THERMAL RESISTANCE<br>JC(t)<br>�<br>R<br>**----- End of picture text -----**<br>


**Figure 12. Thermal Response − minimum pad** 

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**5** 

**2N7002K, 2V7002K** 

## **PACKAGE DIMENSIONS** 

**SOT−23 (TO−236)** CASE 318−08 ISSUE AR 

**==> picture [463 x 328] intentionally omitted <==**

**----- Start of picture text -----**<br>
D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>3 THE BASE MATERIAL.<br>o E eat [|] HE T = 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>T 0 ° −−− 10 ° 0 ° −−− 10 °<br>a A1 SIDE VIEW SEE VIEW C c STYLE 21:<br>END VIEW PIN 1. GATE<br>2. SOURCE<br>3. DRAIN<br>RECOMMENDED<br>SOLDERING FOOTPRINT<br>3X<br>2.90 r o 0.90<br>LO \ ct<br>3X 0.80 | LL 0.95<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


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**2N7002K/D** 

**6**