2SK3812-ZP-E1-AZ

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## **DATA  SHEET** 

## **MOS FIELD EFFECT TRANSISTOR 2SK3812** 

## **SWITCHING N-CHANNEL POWER MOS FET** 

## **DESCRIPTION** 

The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications. 

## **ORDERING  INFORMATION** 

|PART NUMBER|PACKAGE|
|---|---|
|2SK3812-ZP|TO-263(MP-25ZP)|



## **FEATURES** 

- Super low on-state resistance 

RDS(on)1 = 2.8 mΩ MAX. (VGS = 10 V, ID = 55 A) 

RDS(on)2 = 3.7 mΩ MAX. (VGS = 4.5 V, ID = 55 A) 

- High current rating: ID(DC) = ±110 A 

## **ABSOLUTE  MAXIMUM  RATINGS (TA = 25°C)** 

(TO-263) 

|Drain to Source Voltage (VGS= 0 V)|VDSS|60|V|
|---|---|---|---|
|Gate to Source Voltage (VDS= 0 V)|VGSS|±20|V|
|Drain Current (DC) (TC= 25°C)|ID(DC)|±110|A|
|Drain Current (pulse) **Note1**|ID(pulse)|±440|A|
|Total Power Dissipation (TC= 25°C)|PT1|213|W|
|Total Power Dissipation (TA= 25°C)|PT2|1.5|W|
|Channel Temperature|Tch|150|°C|
|Storage Temperature|Tstg|−55 to +150|°C|
|Single Avalanche Energy **Note2**|EAS|397|mJ|
|Repetitive Avalanche Current **Note3**|IAR|63|A|
|Repetitive Avalanche Energy **Note3**|EAR|397|mJ|



**Notes 1.** PW ≤ 10 µs, Duty Cycle ≤ 1% 

**2.** Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH 

**3.** Tch(peak) ≤ 150°C, RG = 25 Ω 

**The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.** 

Document No. D16738EJ1V0DS00 (1st edition) Date Published September 2004 NS  CP(K) Printed in Japan 

**2004** 

**2SK3812** 

## **ELECTRICAL  CHARACTERISTICS (TA = 25°C)** 

|CHARACTERISTICS|SYMBOL|TEST CONDITIONS|MIN.|TYP.|MAX.|UNIT|
|---|---|---|---|---|---|---|
|Zero Gate Voltage Drain Current|IDSS|VDS= 60 V,VGS= 0 V|||10|µA|
|Gate Leakage Current|IGSS|VGS=±20 V,VDS= 0 V|||±100|nA|
|Gate Cut-off Voltage|VGS(off)|VDS= 10 V,ID= 1 mA|1.5|2.0|2.5|V|
|Forward Transfer Admittance<br> **Note**|| yfs ||VDS= 10 V,ID= 55 A|50|110||S|
|Drain to Source On-state Resistance<br> **Note**|RDS(on)1|VGS= 10 V,ID= 55 A||2.3|2.8|mΩ|
||RDS(on)2|VGS= 4.5 V, ID= 55 A||2.6|3.7|mΩ|
|Input Capacitance|Ciss|VDS= 10 V<br>VGS= 0 V<br>f = 1 MHz||16800||pF|
|Output Capacitance|Coss|||1600||pF|
|Reverse Transfer Capacitance|Crss|||1000||pF|
|Turn-on DelayTime|td(on)|VDD= 30 V, ID= 55 A<br>VGS= 10 V<br>RG= 0Ω||42||ns|
|Rise Time|tr|||160||ns|
|Turn-off DelayTime|td(off)|||140||ns|
|Fall Time|tf|||15||ns|
|Total Gate Charge|QG|VDD  = 48 V<br>VGS= 10 V<br>ID= 110 A||250||nC|
|Gate to Source Charge|QGS|||41||nC|
|Gate to Drain Charge|QGD|||66||nC|
|BodyDiode Forward Voltage<br> **Note**|VF(S-D)|IF= 110 A,VGS= 0 V||0.87|1.5|V|
|Reverse RecoveryTime|trr|IF= 110 A, VGS= 0 V<br>di/dt = 100 A/µs||53||ns|
|Reverse RecoveryCharge|Qrr|||74||nC|



**Note** Pulsed 

## **TEST CIRCUIT 1  AVALANCHE CAPABILITY** 

## **TEST CIRCUIT 2  SWITCHING TIME** 

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D.U.T. D.U.T.<br>RG = 25  Ω L RG RL VWave FormGS VGS0 10% VGS 90%<br>PG. 50  Ω VDD PG. VDD<br>VGS = 20  → 0 V VDS<br>90% 90%<br>BVDSS V0GS VDS V0DS 10% 10%<br>IAS Wave Form<br>ID VDS τ td(on) tr td(off) tf<br>VDD<br>τ  = 1  µ s ton toff<br>Duty Cycle  ≤ 1%<br>Starting Tch<br>**----- End of picture text -----**<br>


## **TEST CIRCUIT 3  GATE CHARGE** 

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D.U.T.<br>IG = 2 mA RL<br>PG. 50  Ω VDD<br>**----- End of picture text -----**<br>


**2** 

Data Sheet  D16738EJ1V0DS 

**2SK3812** 

## **TYPICAL  CHARACTERISTICS (TA = 25°C)** 

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 

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120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 25 50 75 100 125 150 175<br>TC - Case Temperature - °C<br>dT - Percentage of Rated Power - %<br>**----- End of picture text -----**<br>


## TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 

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250<br>200<br>150<br>100<br>50<br>0<br>0 25 50 75 100 125 150 175<br>TC - Case Temperature - °C<br> - Total Power Dissipation - W<br>T<br>P<br>**----- End of picture text -----**<br>


FORWARD BIAS SAFE OPERATING AREA 

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1000<br>RDS(on) Limited ID(pulse)<br>(at V GS = 10 V)<br>PW =100 µs<br>ID(DC)<br>100<br>Power Dissipation Limited 1 ms<br>10<br>10 ms<br>1<br>T C = 25°C<br>Single pulse<br>0.1<br>0.1 1 10 100<br>VDS - Drain to Source Voltage - V<br> - Drain Current - A<br>ID<br>**----- End of picture text -----**<br>


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TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 

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1000<br>Rth(ch-A) = 83.3°C/W<br>100<br>10<br>1<br>Rth(ch-C) = 0.587 ° C/W<br>0.1<br>0.01<br>Single pulse<br>0.001<br> 100 µ 1 m  10 m  100 m  1  10  100  1000<br>PW - Pulse Width - s<br>C/W<br>°<br> - Transient Thermal Resistance -<br>rth(ch-A)<br>**----- End of picture text -----**<br>


**3** 

Data Sheet  D16738EJ1V0DS 

**2SK3812** 

## DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 

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500<br>Pulsed<br>400 V GS  = 10 V<br>300<br>4.5 V<br>200<br>100<br>0<br>0 0.4 0.8 1.2 1.6<br>VDS - Drain to Source Voltage - V<br> - Drain Current - A<br>ID<br>**----- End of picture text -----**<br>


## FORWARD TRANSFER CHARACTERISTICS 

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1000<br>VDS = 10 V<br>100 Pulsed<br>10<br>TA = 150°C<br>1 75°C<br>25°C<br>0.1 −55°C<br>0.01<br>0.001<br>1 2 3 4 5<br> - Drain Current - A<br>ID<br>**----- End of picture text -----**<br>


VGS - Gate to Source Voltage - V 

GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 

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3.0<br>VDS = 10 V<br>2.5 ID = 1 mA<br>2.0<br>1.5<br>1.0<br>0.5<br>0<br>-75 -25 25 75 125 175<br>Tch - Channel Temperature - °C<br> - Gate Cut-off Voltage - V<br>GS(off)<br>V<br>**----- End of picture text -----**<br>


DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 

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6<br>Pulsed<br>5<br>4<br>VGS = 4.5 V<br>3<br>2 10 V<br>1<br>0<br>1 10 100 1000<br>ID - Drain Current - A<br>Ω<br> - Drain to Source On-state Resistance - m<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 

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1000<br>VDS = 10 V<br>Pulsed<br>TA = 150°C<br>100<br>75°C<br>25°C<br>−55°C<br>10<br>1<br>0.1 1 10 100 1000<br>ID - Drain Current - A<br> | - Forward Transfer Admittance - S<br>fs<br>| y<br>**----- End of picture text -----**<br>


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DRAIN TO SOURCE ON-STATE RESISTANCE vs.<br>GATE TO SOURCE VOLTAGE<br>6<br>Pulsed<br>5<br>ID = 110 A<br>4<br>55 A<br>22 A<br>3<br>2<br>1<br>0<br>0 2 4 6 8 10 12 14 16 18 20<br>VGS - Gate to Source Voltage - V<br>Ω<br> - Drain to Source On-state Resistance - m<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**4** 

Data Sheet  D16738EJ1V0DS 

**2SK3812** 

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 

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6<br>Pulsed<br>5<br>4<br>VGS = 4.5 V<br>3<br>10  V<br>2<br>1<br>0<br>-75 -25 25 75 125 175<br>Tch - Channel Temperature - °C<br>Ω<br> - Drain to Source On-state Resistance - m<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


SWITCHING CHARACTERISTICS 

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1000<br>tr<br>td(off)<br>100<br>td(on)<br>tf<br>10<br>VDD = 30 V<br>VGS = 10 V<br>R G  = 0 Ω<br>1<br>0.1 1 10 100 1000<br>ID - Drain Current - A<br> - Switching Time - ns , tf<br>d(off)<br>, t, tr<br>td(on)<br>**----- End of picture text -----**<br>


SOURCE TO DRAIN DIODE FORWARD VOLTAGE 

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1000<br>V GS  = 10 V<br>100 4.5 V<br>0 V<br>10<br>1<br>Pulsed<br>0.1<br>0 0.5 1 1.5<br>VF(S-D) - Source to Drain Voltage - V<br> - Diode Forward Current - A IF<br>**----- End of picture text -----**<br>


CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 

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100000<br>VGS = 0 V<br>f = 1 MHz<br>10000 Ciss<br>Coss<br>1000<br>Crss<br>100<br>0.1 1 10 100<br>VDS - Drain to Source Voltage - V<br> - Capacitance - pF<br>rss<br>, C<br>oss<br>, C<br>iss<br>C<br>**----- End of picture text -----**<br>


DYNAMIC INPUT/OUTPUT CHARACTERISTICS 

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60 12<br>ID = 110 A<br>50 10<br>VDD = 48 V<br>30 V<br>40 12 V 8<br>30 6<br>VGS<br>20 4<br>10 2<br>VDS<br>0 0<br>0 50 100 150 200 250 300<br>QG - Gate Charge - nC<br>REVERSE RECOVERY TIME vs.<br>DIODE FORWARD CURRENT<br>1000<br>di/dt = 100 A/µs<br>VGS = 0 V<br>100<br>10<br>1<br>0.1 1 10 100 1000<br>IF - Diode Forward Current - A<br> - Drain to Source Voltage - V   - Gate to Source Voltage - V<br>DS GS<br>V V<br> - Reverse Recovery Time - ns trr<br>**----- End of picture text -----**<br>


**5** 

Data Sheet  D16738EJ1V0DS 

**2SK3812** 

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 

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1000<br>100 IAS = 63 A<br>EAS = 397 mJ<br>10 VDD = 30 V<br>RG = 25 Ω<br>V GS  = 20 → 0 V<br>Starting Tch = 25°C<br>1<br>0.001 0.01 0.1 1 10<br>L - Inductive Load - mH<br> - Single Avalanche Current - A<br>IAS<br>**----- End of picture text -----**<br>


SINGLE AVALANCHE ENERGY DERATING FACTOR 

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100<br>VDD = 30 V<br>RG = 25 Ω<br>80<br>VGS = 20 → 0 V<br>I AS ≤ 63 A<br>60<br>40<br>20<br>0<br>25 50 75 100 125 150<br>Starting Tch - Starting Channel Temperature - °C<br>Energy Derating Factor - %<br>**----- End of picture text -----**<br>


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**6** 

Data Sheet  D16738EJ1V0DS 

**2SK3812** 

## **PACKAGE  DRAWING (Unit: mm)** 

## **TO-263 (MP-25ZP)** 

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10.0±0.3 4.45±0.2<br>No plating 7.88 MIN. 1.3±0.2<br>4<br>0.025 to<br>0.25<br>0.5<br>0.75±0.2<br>2.54<br>0.25<br>1 2 3<br>1. Gate<br>2. Drain<br>3. Source<br>4. Fin (Drain)<br>o<br>0.6±0.2<br>0 to 8<br>1.35±0.3<br>8.0 TYP.<br>9.15±0.3<br>15.25±0.5<br>2.54±0.25<br>2.5<br>**----- End of picture text -----**<br>


## **EQUIVALENT  CIRCUIT** 

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Drain<br>Body<br>Gate<br>Diode<br>Source<br>**----- End of picture text -----**<br>


**Remark** Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation.  Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 

**7** 

Data Sheet  D16738EJ1V0DS 

**2SK3812** 

- **The information in this document is current as of September, 2004. The information is subject to change without notice.  For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products.  Not all products and/or types are available in every country.  Please check with an NEC Electronics sales representative for availability and additional information.** 

- No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics.  NEC Electronics assumes no responsibility for any errors that may appear in this document. 

- NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products.  No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. 

- Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. 

- While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely.  To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. 

- NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". 

- The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application.  The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below.  Customers must check the quality grade of each NEC Electronics product before using it in a particular application. 

- "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. 

- "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). 

- "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. 

The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc.  If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. 

(Note) 

- (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. 

- (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 

M8E  02. 11-1