2SK3703-1E

**Ordering number : EN7681B** 

## **2SK3703** 

## **N-Channel Power MOSFET 60V, 30A, 26m** Ω **, TO-220F-3SG** 

http://onsemi.com 

## **Features** 

- ON-resistance  RDS(on)1=20mΩ (typ.) 

   - Input capacitance  Ciss=1780pF (typ.) 

- 4V drive 

## **Specifi cations** 

## **Absolute Maximum Ratings** at Ta=25°C 

|**Absolute Maximum Ratingsgss**at Ta=25°C|at Ta=25°C||||
|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|Unit|
|Drain-to-Source Voltage|VDSS||60|V|
|Gate-to-Source Voltage|VGSS||±20|V|
|Drain Current(DC)|ID||30|A|
|Drain Current(Pulse)|IDP|PW≤10μs, dutycycle≤1%|120|A|
|Allowable Power Dissipation|PD||2.0|W|
|||Tc=25°C|25|W|
|Channel Temperature|Tch||150|°C|
|Storage Temperature|Tstg||--55 to +150|°C|
|Avalanche Energy (Single Pulse)*1|EAS||135|mJ|
|Avalanche Current *2|IAV||30|A|



Note : * 1 VDD=20V, L=200μH, IAV=30A (Fig.1) 

* 2 L≤200μH, Single pulse 

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

## **Package Dimensions** 

unit : mm (typ) 

7529-001 

## **Product & Package Information** 

• Package : TO-220F-3SG • JEITA, JEDEC : SC-67 

• Minimum Packing Quantity : 50 pcs./magazine 

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10.16 4.7 2SK3703-1E<br>3.18 2.54<br>Marking  Electrical Connection<br>2<br>A<br>K3703 1<br>LOT No.<br>2.76<br>1.47 MAX 2 :<br>0.8 DETAIL-A (0.84) 3<br>1 2 3<br>0.5 1 : Gate<br>FRAME 2 : Drain<br>EMC 3 : Source<br>a 2.54 a 2.54 @ TO-220F-3SG<br>3.3<br>6.68<br>15.87<br>15.8<br>3.23<br>12.98<br>)(   1.0<br>**----- End of picture text -----**<br>


Semiconductor Components Industries, LLC, 2013 **July, 2013** 

51612 TKIM TC-00002747/72506QA MSIM TC-00000067/61504 TSIM TA-100813  No.7681-1/7 

**2SK3703** 

## **Electrical Characteristics** at Ta=25°C 

|**Electrical Characteristics **at Ta|=25°C||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|||Unit|
||||min|typ|max||
|Drain-to-Source Breakdown Voltage|V(BR)DSS|ID=1mA, VGS=0V|60|||V|
|Zero-Gate Voltage Drain Current|IDSS|VDS=60V, VGS=0V|||1|μA|
|Gate-to-Source Leakage Current|IGSS|VGS=±16V, VDS=0V|||±10|μA|
|Cutoff Voltage|VGS(off)|VDS=10V, ID=1mA|1.2||2.6|V|
|Forward Transfer Admittance|| yfs||VDS=10V, ID=15A|13|22||S|
|Static Drain-to-Source On-State Resistance|RDS(on)1|ID=15A, VGS=10V||20|26|mΩ|
||RDS(on)2|ID=15A, VGS=4V||28|40|mΩ|
|Input Capacitance|Ciss|VDS=20V, f=1MHz||1780||pF|
|Output Capacitance|Coss|||266||pF|
|Reverse Transfer Capacitance|Crss|||197||pF|
|Turn-ON Delay Time|td(on)|See Fig.2||16.5||ns|
|Rise Time|tr|||110||ns|
|Turn-OFF Delay Time|td(off)|||166||ns|
|Fall Time|tf|||144||ns|
|Total Gate Charge|Qg|VDS=30V, VGS=10V, ID=30A||40||nC|
|Gate-to-Source Charge|Qgs|||6.5||nC|
|Gate-to-Drain “Miller” Charge|Qgd|||11.5||nC|
|Diode Forward Voltage|VSD|IS=30A, VGS=0V||1.0|1.2|V|



## **Fig.1 Avalanche Resistance Test Circuit** 

**Fig.2 Switching Time Test Circuit** 

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VIN VDD=30V<br>L<br>10V<br>0V<br>≥ 50 Ω ID=15A<br>VIN RL=2 Ω<br>2SK3703 D VOUT<br>10V PW=10 μ s<br>50 Ω VDD D.C. ≤ 1%<br>0V<br>G<br>2SK3703<br>P.G 50 Ω S<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Ordering Information**||||
|---|---|---|---|
|Device|Package|Shipping|memo|
|2SK3703-1E|TO-220F-3SG|50pcs./magazine|Pb Free|



No.7681-2/7 

**2SK3703** 

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ID  --  VDS ID  --  VGS<br>50 Tc=25°C 50 VDS=10V<br>45 45<br>40 40<br>35 35<br>30 30<br>25 25<br>20 20<br>15 V GS =3V 15<br>10 10<br>5 5<br>0 0<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>Drain-to-Source Voltage, VDS  --  V IT05386 Gate-to-Source Voltage, VGS  --  V IT05387<br>RDS(on)  --  VGS RDS(on)  --  Tc<br>70 60<br>ID=15A<br>60<br>50<br>50<br>40<br>40<br>30<br>30<br>20<br>20<br>10<br>10<br>0 0<br>2 3 4 5 6 7 8 9 10 --50 --25 0 25 50 75 100 125 150<br>Gate-to-Source Voltage, VGS  --  V IT05388 Case Temperature,  Tc  --  °C IT05389<br>| yfs  | --  ID IS  --  VSD<br>100 5<br>7 32 VGS=0V<br>5 10<br>3 5 [7]<br>3<br>2 2<br>1.0<br>10 5 [7]<br>3<br>7 2<br>5 0.1<br>5 [7]<br>3<br>3<br>2 2<br>0.01<br>1.0 5 [7]<br>3<br>7 2<br>5 0.001<br>0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0 0.3 0.6 0.9 1.2<br>Drain Current, ID  --  A IT05390 Diode Forward Voltage, VSD  --  V IT05391<br>SW Time  --  ID Ciss,  Coss,  Crss  --  VDS<br>5 5<br>VDD=30V f=1MHz<br>3 VGS=10V 3<br>2 2 Ciss<br>1000<br>100<br>7<br>7<br>5<br>5<br>3<br>3<br>2<br>2<br>100<br>10 7<br>0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0 5 10 15 20 25 30<br>Drain Current, ID  --  A IT05392 Drain-to-Source Voltage, VDS  --  V IT05393<br>tf<br>td(on)<br>25°C<br> --25°C<br>td(off)<br>Tc=75°C<br>4V<br>Crss<br>Coss<br>ID=15A, VGS=10V<br>ID=15A, VGS=4V<br>°C<br>25<br>°C<br>75<br>°C<br>Tc= --25<br>tr<br>6V<br>8V<br>25°C<br>10V<br>Tc=75°C<br>--25°C<br>25°C<br>Tc=75°C<br>°C<br>25<br>°C<br>75<br>°C<br>Tc= --25<br>°C<br>--25<br>Drain Current, ID  --  A Drain Current, ID  --  A<br>Ω Ω<br>Static-Drain-to-Source  On-State Resistance, RDS(on)  --  m Static-Drain-to-Source  On-State Resistance, RDS(on)  --  m<br>|  --  S<br>fs<br>y<br>|<br>Source Current, IS  --  A<br>Forward Transfer Admittance,<br>Ciss,  Coss,  Crss  --  pF<br>Switching Time, SW Time  --  ns<br>**----- End of picture text -----**<br>


No.7681-3/7 

**2SK3703** 

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VGS  --  Qg A S O<br>10 1000<br>VDS=30V 75<br>9 ID=30A 3<br>8 2 I DP =120A(PW ≤ 10 μ s)<br>100<br>7 7<br>5 ID=30A<br>3<br>6<br>2<br>5 10<br>7<br>5<br>4<br>3 Operatuon in this<br>3 2 area is limited by R DS (on).<br>1.0<br>2 7<br>5<br>1 32 Tc=25 ° C<br>0 0.1 Single pulse<br>0 5 10 15 20 25 30 35 40 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100<br>Total Gate Charge, Qg  --  nC IT05394 Drain-to-Source Voltage, VDS  --  V IT16832<br>PD  --  Ta PD  --  Tc<br>2.5 35<br>30<br>2.0<br>25<br>1.5<br>20<br>15<br>1.0<br>10<br>0.5<br>5<br>0 0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Ambient Temperature, Ta  --  °C IT05397 Case Temperature,  Tc  --  °C IT05396<br>EAS  --  Ta<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 25 50 75 100 125 150 175<br>Ambient Temperature, Ta  --  °C IT10478<br>10ms<br>DC operation100ms<br>1ms<br>100<br>μs<br>10<br>Drain Current, ID  --  A μs<br>Gate-to-Source Voltage, VGS  --  V<br>Allowable Power Dissipation, PD  --  W Allowable Power Dissipation, PD  --  W<br>Avalanche Energy derating factor  --  %<br>**----- End of picture text -----**<br>


No.7681-4/7 

**2SK3703** 

## **Magazine Specifi cation** 

2SK3703-1E 

No.7681-5/7 

**2SK3703** 

**Outline Drawing** 2SK3703-1E 

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Mass (g) Unit<br>1.8<br>* For reference [mm]<br>**----- End of picture text -----**<br>


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No.7681-6/7 

**2SK3703** 

Note on usage : Since the 2SK3703 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 

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No.7681-7/7