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2SK3586-01
Power MOSFET, N Channel, 100 V, 73 A, 0.025 ohm, TO-220AB, Through Hole
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- Manufacturer: FUJI ELECTRIC
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 270W
- Transistor Mounting: Through Hole
- Transistor Polarity: N Channel
- Power Dissipation Pd: 270W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.025ohm
- Transistor Case Style: TO-220AB
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 73A
- Drain Source On State Resistance: 0.025ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 800 |
| Price | 2.31 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## - 2SK3586 01 ~~So RSETRIE~~ _**FUJI POWER MOSFET**_ **N-CHANNEL SILICON POWER MOSFET** _**Super FAP-G Series**_ ## **Outline Drawings (mm)** ## **Features** **==> picture [117 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> TO-220AB<br>a 7<br>o<br>Type nore - i L<br>OOO<br>Drain(D)<br>|<br>Gate(G)<br>Source(S)<br>**----- End of picture text -----**<br> **High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof** ## **Applications** **Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters** ## **Maximum ratings and characteristicAbsolute maximum ratings** **(Tc=25°C unless otherwise specified)** ||**Maximum ratings and characteristicAbsolute maximum ratingsAbsolute maximum ratings**<br>**(Tc=25°C unless otherwise specified)**<br>~~ee~~|**Maximum ratings and characteristicAbsolute maximum ratingsAbsolute maximum ratings**<br>**(Tc=25°C unless otherwise specified)**<br>~~ee~~|**Maximum ratings and characteristicAbsolute maximum ratingsAbsolute maximum ratings**<br>~~ee~~| |---|---|---|---| ||**Symbol**<br>~~ee~~||**Ratings**<br>~~ee~~| |Drain-source voltage|VDS<br>~~ee~~||100<br>~~ee~~| ||VDSX *5<br>~~ee~~<br>eeeee||70<br>~~ee~~<br>eee| |Continuous drain current|ID<br>~~ee~~<br>eeeee<br>ee||±50<br>~~ee~~<br>eee<br>ee| |Pulsed drain current|ID(puls]<br>eeeee<br>ee<br>ee||±200<br>eee<br>ee<br>ee| |Gate-source voltage|VGS<br>ee<br>ee||±30<br>ee<br>ee| |Non-repetitive Avalanche current|IAS *2<br>ee<br>ee<br>ee||50<br>ee<br>ee<br>ee| |Non-repetitive Avalanche current<br>Maximum Avalanche Energy|EAS *1<br>ee<br>ee<br>ee||465<br>ee<br>ee<br>ee| |Maximum Avalanche Energy<br>Maximum Drain-Source dV/dt|dVDS/dt*4<br>ee<br>ee<br>ee||20<br>ee<br>ee<br>eee| |Peak Diode Recovery dV/dt|dV/dt*3<br>ee<br>ee<br>|-_-—————||5<br>ee<br>eee<br>-_-—————| |Peak Diode Recovery dV/dt<br>Max. power dissipation|PDTa=25<br>Tc=25<br>ee<br>|-_-—————<br>ee|Ta=25°C<br>ee <br>-_-—————|2.02<br> eee<br>-_-—————| |||Tc=25°C<br>-_-—————<br>a <br>ee|135<br>-_-—————<br> ee<br>ee| |Operating and storage<br>temperature range|Tch<br>| -_-—————<br>ee||+150<br>-_-—————<br>ee| ||Tstg<br>ee||-55 to +150<br>ee| ## **Equivalent circuit schematic** *1 L=223µH, Vcc=48V *2 Tch 150°C[<] = *3 IF -I[<] = D, -di/dt=50A/µs, Vcc BV[<] = DSS, Tch 150°C[<] = *4 VDS 100V<= *5 VGS=-30V e **Electrical characteristics (Tc =25°C unless otherwise specified)** |**Item**|**Symbol**|**Min. T**<br>**Test Conditions**|**Min. T**<br>**Test Conditions**|**Min. Typ. Max. Units**|**. Max. Units**| |---|---|---|---|---|---| |Drain-source breakdown voltaget|V(BR)DSS<br>~~a~~|ID= 250µA VGS=0V<br>100|||V| |Gate threshold voltage|VGS(th)<br>a|ID= 250µA VDS=VGS<br>3.0<br> ~~a~~||3.0<br>5.0|V| |Zero gate voltage drain current I|Zero gate voltage drain current IDSS<br>—————<br>a|VDS=100V VGS=0V<br>VDS=80V VGS=0V<br>T<br>T<br>—————|Tch=25°C<br>—————<br>ee|25<br>—————<br>ee<br>eee|µA<br>—————<br>ee<br>eee| ||||Tch=125°C<br>—————<br>ee<br>ee|250<br>—————<br>ee<br>ee<br>eee|| |Gate-source leakage current|IGSS<br>a|VGS=±30V<br>VDS=0V<br>ee||10<br>100<br>ee<br>eee|nA<br>eee| |Drain-source on-state resistance|RDS(on)<br>a<br>~~Re~~|ID=25A VGS=10V||19<br>25|mΩ| |Forward transcondutance<br>~~|~~|gfs<br>~~Re~~<br>~~|~~|ID=25A VDS=25V<br>15<br>a||30<br>ee|S| |Input capacitance<br>~~|~~<br>**|**|Ciss<br>~~Re~~<br>~~|~~<br>**|**|VDS=75V<br>VGS=0V<br>f=1MHz<br>a<br>**a**<br>a||1830<br>2745<br>ee<br>eeee|pF<br>ee| |Output capacitance<br>~~|~~<br>**|**|Coss<br>~~|~~<br>**|**|||460<br>690<br>ee<br>eeee|| |Output capacitance<br>Reverse transfer capacitance<br>**|**|Crss<br>**|**|||38<br>57<br>ee ee<br>ee|| |Turn-on time ton<br>PT|td(on)<br>~~—~~<br>Sd|VCC=48V ID=25A<br>VGS=10V<br>RGS=10Ω<br>~~—~~<br>a<br>ee<br>Sd<br>se<br>a<br>J||20<br>30<br>ee<br>ee<br>eeeee|ns<br>ee<br>eee<br>se| ||tr<br>~~—~~<br>Sd<br>PT|||35<br>53<br>ee<br>ee<br>eeeee<br>se|| |Turn-off time toff<br>PT|td(off)<br>~~—~~<br>Sd<br>PT|||50<br>75<br>eeeee<br>se<br>ee|| ||tf<br>Sd<br>PT<br>J|||23<br>35<br>ee eee<br>se<br>ee<br>a|| |Total Gate Charge<br>PT|QG<br>PT<br>J|VCC=50V<br>ID=50A<br>VGS=10V<br>se<br>a<br>es<br>J<br>es<br>es||52<br>78<br>se<br>ee<br>es<br>a<br>es|nC<br>se<br>es<br>es<br>es<br>eee| |Gate-Source Charge|QGS<br>J<br>a|||16<br>24<br>a<br>es<br>es<br>eeeee|| |Gate-Drain Charge|QGD<br>J<br>a|||18<br>27<br>a<br>es<br>eeeee|| |Gate-Drain Charge<br>Avalanche capability|IAV<br>a<br>~~es~~|L=100µH Tch=25°C<br>50||ee eee|A<br>eee| |Diode forward on-voltage|VSD<br>~~es~~<br>~~ee~~|IF=50A VGS=0V Tch=25°C<br>~~a~~<br>~~ee~~||1.10<br>1.65<br>~~ee~~|V<br>1.65| |Reverse recovery time|trr<br>~~es~~<br>~~ee~~|IF=50A VGS=0V<br>-di/dt=100A/µsTch=25°C<br>~~a~~<br>~~ee~~<br>ee||0.1<br>~~ee~~<br>~~ee~~|µs| |Reverse recoverycharge|Qrr<br>~~ee~~|||0.4<br>~~ee~~<br>ee<br>~~ee~~|µC<br>ee| www.fujielectric.co.jp/denshi/scd 1 **2SK3586-01** FUJI POWER MOSFET ## Characteristics **==> picture [198 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Allowable Power Dissipation<br>PD=f(Tc)<br>200<br>175<br>150<br>125<br>100<br>75<br>50<br>25<br>0<br>0 25 50 75 100 125 150<br>Tc [°C]<br>PD [W]<br>**----- End of picture text -----**<br> **==> picture [220 x 217] intentionally omitted <==** **----- Start of picture text -----**<br> Maximum Avalanche Energy vs. starting Tch<br>E(AV)=f(starting Tch):Vcc=48V,I(AV)<=50A<br>500<br>400<br>300<br>200<br>100<br>0<br>0 25 50 75 100 125 150<br> starting Tch [°C]<br> EAV [mJ]<br>**----- End of picture text -----**<br> Typical Output Characteristics ID=f(VDS):80µs Pulse test,Tch=25°C **==> picture [195 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>20V<br>10V<br>160<br>120<br>8V<br>80 7.5V<br>7.0V<br>6.5V<br>40<br>6.0V<br>VGS=5.5V<br>0<br>0 2 4 6 8 10 12<br>VDS [V]<br>ID [A]<br>**----- End of picture text -----**<br> ## Typical Transfer Characteristic ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C **==> picture [194 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1<br>0.1<br>0 1 2 3 4 5 6 7 8 9 10<br>VGS[V]<br>ID[A]<br>**----- End of picture text -----**<br> ## Typical Transconductance Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs Pulse test, Tch=25°C gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C **==> picture [434 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> 100 0.15<br>VGS=<br>5.5V 6.0V 6.5V 7.0V<br>0.12<br>7.5V<br>10<br>0.09 8V<br>0.06<br>1 10V<br>0.03<br>20V<br>0.1 0.00<br>0.1 1 10 100 0 40 80 120 160 200<br>ID [A] ID [A]<br> ]<br>Ω<br>gfs [S]<br>RDS(on) [<br>**----- End of picture text -----**<br> 2 **2SK3586-01** FUJI POWER MOSFET **==> picture [194 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Gate Threshold Voltage vs. Tch<br>VGS(th)=f(Tch):VDS=VGS,ID=250µAµAA<br>7.0<br>6.5<br>6.0<br>5.5<br>5.0 max.<br>4.5<br>4.0<br>3.5<br>3.0 min.<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>-50 -25 0 25 50 75 100 125 150<br>Tch [°C]°C]C]<br>VGS(th) [V]<br>**----- End of picture text -----**<br> **==> picture [426 x 460] intentionally omitted <==** **----- Start of picture text -----**<br> Drain-Source On-state Resistance Gate Threshold Voltage vs. Tch<br>RDS(on)=f(Tch):ID=25A,VGS=10V VGS(th)=f(Tch):VDS=VGS,ID=250µAµAA<br>60 7.0<br>6.5<br>6.0<br>50<br>5.5<br>5.0 max.<br>40<br>4.5<br>4.0<br>30 max. 3.5<br>3.0 min.<br>2.5<br>20<br>typ. 2.0<br>1.5<br>10<br>1.0<br>0.5<br>0 0.0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>Tch [°C] Tch [°C]°C]C]<br>Typical Gate Charge Characteristics Typical Capacitance<br>VGS=f(Qg):ID=50A, Tch=25°C 101 C=f(VDS):VGS=0V,f=1MHz<br>14<br>12 Ciss<br>10 100<br>Vcc= 50V<br>8<br>Coss<br>6<br>10-1<br>4<br>2<br>Crss<br>0 10-2<br>0 20 40 60 80 -1 0 1 2<br>10 10 10 10<br> Qg [nC] VDS [V]<br> ]<br>Ω<br>VGS(th) [V]<br>RDS(on) [ m<br> VGS [V] C [nF]<br>**----- End of picture text -----**<br> Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V, VGS=10V, RG=10Ω IF=f(VSD):80µs Pulse test,Tch=25°C **==> picture [428 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 100 103<br>tf<br>10 102<br>td(off) tr<br>td(on)<br>1 101<br>0.10.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 10010-1 100 101 102<br>VSD [V]<br>ID [A]<br>IF [A]<br>t [ns]<br>**----- End of picture text -----**<br> 3 **2SK3586-01** FUJI POWER MOSFET **==> picture [281 x 216] intentionally omitted <==** **----- Start of picture text -----**<br> Transient Thermal Impedance<br>101 Zth(ch-c)=f(t):D=0<br>100<br>10-1<br>10-2<br>10-3<br>10-6 10-5 10-4 10-3 10-2 10-1 100<br>t [sec]<br>Zth(ch-c) [°C/W]<br>**----- End of picture text -----**<br> **==> picture [253 x 222] intentionally omitted <==** **----- Start of picture text -----**<br> Maximum Avalanche Current Pulsewidth<br>2IAV=f(tAV):starting Tch=25°C. Vcc=48V<br>10<br>Single Pulse<br>101<br>100<br>10-1<br>10-2<br>10-8 10-7 10-6 10-5 10-4 10-3 10-2<br>tAV [sec]<br> [A]<br>AV<br>Avalanche Current I<br>**----- End of picture text -----**<br> 4
Updated at February 9, 2023
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