2SK3557-6-TB-E
JFET Transistor, -15 V, 20 mA, -1.5 V, SOT-23, 3 Pin, 150 °C
- Manufacturer: ONSEMI
- Product type: JFETs
- Breakdown Voltage Vbr:-15V; Zero Gate Voltage Drain Current Idss Min:10mA; Zero Gate Voltage Drain Current Idss Max:20mA; Gate-Source Cutoff Voltage Vgs(off) Max:-1.5V; Transistor Cas
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3 Pin
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Transistor Mounting: Surface Mount
- Transistor Case Style: SOT-23
- Operating Temperature Max: 150°C
- Gate Source Cutoff Voltage Max: -1.5V
- Gate Source Breakdown Voltage Max: -15V
- Zero Gate Voltage Drain Current Max: 20mA
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.136 € |
| Current stock | 1000+ |
| Lead time | 30 days |
## **Ordering number : EN7169A 2SK3557** ~~—_~~ @ **N-Channel JFET 15V, 10 to 32mA, 35mS, CP** http://onsemi.com ## **Applications** - AM tuner RF amplifi cation - Low noise amplifi er ## **Features** - Large | yfs | - Small Ciss - Ultrasmall-sized package permitting 2SK3557-applied sets to be made smaller and slimer - Ultralow noise fi gure ## **Specifi cations** **Absolute Maximum Ratings** at Ta=25°C |**Absolute Maximum Ratingsgss**at Ta=25°C||||| |---|---|---|---|---| |Parameter<br>Symbol|Conditions||Ratings|Unit| |Drain-to-Source Voltage<br>VDSX|||15|V| |Gate-to-Drain Voltage<br>VGDS|||--15|V| |Gate Current<br>IG|||10|mA| |Drain Current<br>ID|||50|mA| |Allowable Power Dissipation<br>PD|||200|mW| |Junction Temperature<br>Tj|||150|°C| |Storage Temperature<br>Tstg|||--55 to +150|°C| |Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating<br>Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.<br>~~Po~~||||| |**Package Dimensions**|**Product & Package Information**|||| |unit : mm (typ)|• Package|: CP||| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ~~Po~~ **Package Dimensions** unit : mm (typ) 7013A-011 • JEITA, JEDEC : SC-59, TO-236, SOT-23, TO-236AB **==> picture [158 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> • Minimum Packing Quantity : 3,000 pcs./reel<br>**----- End of picture text -----**<br> **==> picture [423 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 2.9 0.1 2SK3557-6-TB-E<br>3 2SK3557-7-TB-E Packing Type: TL Marking<br>IR<br>1 2 TB<br>id 0.95 0.4<br>1 : Source Electrical Connection<br>2 : Drain<br>3 : Gate<br>3<br>CP<br>aaa 4<br>1 2<br>0.5<br>2.5 1.5<br>RANK<br>LOT No. LOT No.<br>0.5<br>0.3<br>1.1<br>0.05<br>**----- End of picture text -----**<br> Semiconductor Components Industries, LLC, 2013 **August, 2013** 62012 TKIM/60502 TSIM TA-3622 No.7169-1/6 **2SK3557** ## **Electrical Characteristics** at Ta=25°C |**Electrical Characteristics **at Ta|=25°C|||||| |---|---|---|---|---|---|---| |Parameter|Symbol|Conditions||Ratings||Unit| ||||min|typ|max|| |Gate-to-Drain Breakdown Voltage|V(BR)GDS|IG=--10μA, VDS=0V|--15|||V| |Gate Cutoff Current|IGSS|VGS=--10V, VDS=0V|||--1.0|nA| |Cutoff Voltage|VGS(off)|VDS=5V, ID=100μA|--0.3|--0.7|--1.5|V| |Drain Current|IDSS|VDS=5V, VGS=0V|10*||32*|mA| |Forward Transfer Admittance||yfs||VDS=5V, VGS=0V, f=1kHz|24|35||mS| |Input Capacitance|Ciss|VDS=5V, VGS=0V, f=1MHz||10.0||pF| |Reverse Transfer Capacitance|Crss|VDS=5V, VGS=0V, f=1MHz||2.9||pF| |Noise Figure|NF|VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz||1.0||dB| - : The 2SK3557 is classifi ed by IDSS as follows : (unit : mA) |Rank|6|7| |---|---|---| |IDSS|10.0 to 20.0|16.0 to 32.0| ## **Ordering Information** |**Ordering Information**|||| |---|---|---|---| |Device|Package|Shipping|memo| |2SK3557-6-TB-E|CP|3,000pcs./reel|Pb Free| |2SK3557-7-TB-E|CP|3,000pcs./reel|| **==> picture [472 x 369] intentionally omitted <==** **----- Start of picture text -----**<br> ID -- VDS ID -- VDS<br>20 20<br>16 16<br>12 12<br>8 8<br>4 4<br>0 0<br>0 0.4 0.8 1.2 1.6 2.0 2.4 0 2 4 6 8 10 12<br>Drain-to-Source Voltage, VDS -- V ITR02749 Drain-to-Source Voltage, VDS -- V ITR02750<br>ID -- VGS ID -- VGS<br>22 16<br>VDS=5V VDS=5V<br>20 14 IDSS=15mA<br>18<br>12<br>16<br>14 10<br>12<br>8<br>10<br>8 6<br>6<br>4<br>4<br>2<br>2<br>0 0<br>--1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0.2 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0.2<br>Gate-to-Source Voltage, VGS -- V IT04224 Gate-to-Source Voltage, VGS -- V ITR02752<br>--0.5V<br>--0.6V --0.5V<br>--0.7V --0.6V<br>--0.3V<br>--0.3V<br>--0.4V<br>--0.7V<br>--0.2V<br>--0.4V<br>--0.2V<br>--0.1V<br>VGS=0<br>--0.1V<br>VGS=0<br>IDSS=30mA<br>25°C<br>15mA<br>20mA Ta=--25°C<br>10mA<br>°C<br>75<br>Drain Current, ID -- mA Drain Current, ID -- mA<br>Drain Current, ID -- mA Drain Current, ID -- mA<br>**----- End of picture text -----**<br> No.7169-2/6 **2SK3557** **==> picture [473 x 738] intentionally omitted <==** **----- Start of picture text -----**<br> 7 | yfs | -- ID 100 | yfs | -- ID<br>VDS=5V VDS=5V<br>5 f=1kHz Pot TP VGS=0<br>7 f=1kHz<br>3<br>5<br>2 ea<br>| A<br>3<br>10 rT<br>UT<br>7 Pot<br>2<br>5<br>Pp fit fT | TT<br>32 CorrePTT] 10<br>3 5 7 1.0 Ty 2 3 et 5 7 10 2 3 5 7 10 2 3 5<br>Drain Current, ID -- mA IT04225 Drain Current, IDSS -- mA IT04226<br>VGS(off) -- IDSS Ciss -- VDS<br>3 3<br>VDS=5V VGS=0<br>ID=100μA f=1MHz<br>2 P| 2<br>| |<br>1.075 aaaaa 1075<br>3 3<br>7 10 2 3 5 7 1.0 2 3 5 7 10 2 3<br>pe]<br>Drain Current, IDSS -- mA IT04227 Drain-to-Source Voltage, VDS -- V IT04228<br>Crss -- VDS NF -- f<br>10 10<br>VDS=0 VDS=5V<br>7 f=1MHz ID=1mA<br>FE 8 E Rg=1kΩ<br>5 phe<br>3 PES 6 ET<br>2<br>4<br>1.0 OCT) 2 AIP<br>7<br>5 See 0 \ LPR<br>7 1.0 2 3 5 7 10 2 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7100<br>Drain-to-Source Voltage, VDS -- V IT04229 Frequency, f -- kHz ITR02758<br>NF -- Rg PD -- Ta<br>10 240<br>VDS=5V<br>ID=1mA<br>f=1kHz 200<br>8<br>SP EA [EEE]<br>160<br>6 CHC \<br>120<br>4 SU = RSS<br>80 Ss<br>2<br>40<br>nem) ANE<br>0 Cero 0 EEA<br>0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 71000 0 ptt 20 40 60 Pet 80 100 120 IN 140 160<br>Signal Source Resistance, Rg -- kΩ ITR02759 Ambient Temperature, Ta -- °C ITR02760<br>30mA<br>IDSS=15mA<br>| -- mS | -- mS<br>fs fs<br>y y<br>|Forward Transfer Admittance, |Forward Transfer Admittance,<br>Cutoff Voltage, VGS(off) -- V Input Capacitance, Ciss -- pF<br>Noise Figure, NF -- dB<br>Reverse Transfer Capacitance, Crss -- pF<br>Noise Figure, NF -- dB<br>Allowable Power Dissipation, PD -- mW<br>**----- End of picture text -----**<br> No.7169-3/6 **2SK3557** ## **Embossed Taping Specifi cation** 2SK3557-6-TB-E, 2SK3557-7-TB-E **==> picture [435 x 591] intentionally omitted <==** No.7169-4/6 **2SK3557** **Outline Drawing** 2SK3557-6-TB-E, 2SK3557-7-TB-E **==> picture [254 x 370] intentionally omitted <==** **----- Start of picture text -----**<br> Mass (g) Unit<br>0.013<br>* For reference [mm]<br>**----- End of picture text -----**<br> ## **Land Pattern Example** **==> picture [215 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Unit: mm<br>0.8<br>0.95 0.95<br>0<br>1.<br>2.4<br>**----- End of picture text -----**<br> No.7169-5/6 **2SK3557** ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.7169-6/6
Updated at April 29, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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