2SK3541T2L

2SK3541 

Transistor 

## 2.5V Drive Nch MOS FET 

## **2SK3541** 

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2SK3541<br>� Structure  � External dimensions  (Unit : mm)<br>Silicon N-channel<br>VMT3<br>MOSFET<br>1.2<br>0.32<br>� Applications  (3)<br>Interfacing, switching (30V, 100mA)  0.22 (1)(2)<br>0.13<br>0.4 0.4 0.5<br>0.8<br>(1)Gate<br>� Features  (2)Source<br>1) Low on-resistance.  (3)Drain Abbreviated symbol : KN<br>2) Fast switching speed.<br>3) Low voltage drive (2.5V) makes this device ideal for<br>portable equipment.<br>4) Drive circuits can be simple.<br>5) Parallel use is easy.<br>� Packaging specifications  � Equivalent circuit<br>Package  Taping Drain<br>Code T2L<br>Type<br>Basic ordering unit<br>(pieces) 8000<br>2SK3541<br>Gate<br>� Absolute maximum ratings  (Ta=25°C) ∗  Gate<br>   Protection<br>Parameter Symbol Limits Unit    Diode Source<br>Drain-source voltage VDSS 30 V<br>Gate-source voltage VGSS ± 20 V ∗ A protection diode is included between the gate<br>Continuous ID ± 100 mA and the source terminals to protect the diode<br>Drain current against static electricity when the product is in use.<br>Pulsed IDP [∗] [1] ± 400 mA Use a protection circuit when the fixed voltages<br>are exceeded.<br>Total power dissipation PD [∗] [2] 150 mW<br>Channel temperature Tch 150 ° C<br>Storage temperature Tstg − 55 to  + 150 ° C<br>∗ 1 Pw ≤ 10 µ s, Duty cycle ≤ 1%<br>∗ 2 With each pin mounted on the recommended lands.<br>New Designs<br>Not Recommended for<br>0.2<br>0.8 1.2<br>0.2<br>**----- End of picture text -----**<br>


Rev.B 1/3 

2SK3541 

Transistor 

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� Electrical characteristics  (Ta=25°C)<br>**----- End of picture text -----**<br>


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Parameter Symbol Min. Typ. Max. Unit Conditions<br>Gate-source leakage IGSS − − ± 1 µ A VGS =± 20V,  VDS = 0V<br>Drain-source breakdown voltage V(BR)DSS 30 − − V ID = 10 µ A,  VGS = 0V<br>Zero gate voltage drain current IDSS − − 1.0 µ A VDS = 30V,  VGS = 0V<br>Gate threshold voltage VGS(th) 0.8 − 1.5 V VDS = 3V,  ID = 100 µ A<br>Static drain-source on-state RDS(on) − 5 8 Ω ID = 10mA,  VGS = 4V<br>resistance RDS(on) − 7 13 Ω ID = 1mA,  VGS = 2.5V<br>Forward transfer admittance |Yfs| 20 − − mS ID = 10mA,  VDS = 3V<br>Input capacitance Ciss − 13 − pF VDS = 5V<br>Output capacitance Coss − 9 − pF VGS = 0V<br>Reverse transfer capacitance Crss − 4 − pF f = 1MHz<br>Turn-on delay time td(on) − 15 − ns ID = 10mA,  VDD    5V<br>Rise time tr − 35 − ns VGS = 5V<br>Turn-off delay time td(off) − 80 − ns RL = 500 Ω<br>Fall time tf − 80 − ns RG = 10 Ω<br>� Electrical characteristic curves<br>0.15 4V 200m VDS = 3V 2 VDS = 3V<br>3V Ta = 25 ° C 100m Pulsed PulsedID = 0.1mA<br>Pulsed 50m<br>3.5V<br>1.5<br>20m<br>0.1<br>10m<br>5m 1<br>2.5V<br>2m Ta = 125 ° C<br>0.05 1m 75 ° C<br>2V 0.5m − 2525 °° CC 0.5<br>VGS = 1.5V 0.2m<br>00 1 2 3 4 5 0.1m0 1 2 3 4 0 − 50 − 25 0 25 50 75 100 125 150<br>DRAIN-SOURCE  VOLTAGE : VDS (V) GATE-SOURCE  VOLTAGE : VGS (V) CHANNEL  TEMPERATURE : Tch ( ° C)<br>Fig.1  Typical output characteristics Fig.2  Typical transfer characteristics Fig.3  Gate threshold voltage vs.<br>channel temperature<br>50 VGS = 4V 50 VGS = 2.5V 15 Ta = 25 ° C<br>Pulsed Ta = 125 ° C Pulsed Pulsed<br>20 Ta = 1257525 °°° CCC 20 − 752525 °°° CCC<br>10 − 25 ° C 10 10<br>5 5<br>2 2 5 ID = 0.1A<br>1 1 ID = 0.05A<br>0.5 0.5 0<br>0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 5 10 15 20<br>DRAIN  CURRENT : ID (A) DRAIN  CURRENT : ID (A) GATE-SOURCE  VOLTAGE : VGS (V)<br>Fig.4  Static drain-source on-state  Fig.5  Static drain-source on-state  Fig.6  Static drain-source<br>resistance vs. drain current ( Ι ) resistance vs. drain current ( ΙΙ ) on-state resistance vs.<br>gate-source voltage<br>Rev.B  2/3<br>New Designs<br>Not Recommended for<br> (V)<br>GS(th)<br>DRAIN  CURRENT : I (A)D   DRAIN  CURRENT : I (A)D<br>GATE  THRESHOLD  VOLTAGE : V<br>) ( Ω DS(on) ) ( Ω DS(on) ) ( Ω DS(on)<br>STATIC  DRAIN-SOURCE ON-STATE  RESISTANCE : R STATIC  DRAIN-SOURCE ON-STATE  RESISTANCE : R STATIC  DRAIN-SOURCE ON-STATE  RESISTANCE : R<br>**----- End of picture text -----**<br>


2SK3541 

Transistor 

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9 VGS = 4V 0.5 VDS = 3V 200m VGS = 0V<br>8 Pulsed Pulsed 100m Pulsed<br>0.2<br>7 Ta =− 25 ° C 50m<br>ID = 100mA 0.1 25 ° C<br>654 ID = 50mA 0.020.05 12575 °° CC 20m10m5m Ta = 125 − 752525 °°°° CCCC<br>0.01 2m<br>3<br>1m<br>0.005<br>2 0.5m<br>1 0.002 0.2m<br>0 − 50 − 25 0 25 50 75 100 125 150 0.0010.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.1m0 0.5 1 1.5<br>CHANNEL  TEMPERATURE : Tch ( ° C) DRAIN  CURRENT : ID (A) SOURCE-DRAIN  VOLTAGE : VSD (V)<br>Fig.7  Static drain-source on-state  Fig.8  Forward transfer  Fig.9  Reverse drain current vs.<br>resistance vs. channel  admittance vs. drain current source-drain voltage ( Ι )<br>temperature<br>200m Ta = 25 ° C 50 Ta = 25 ° C 1000 tf Ta = 25 ° C<br>100m50m Pulsed 20 fV = GS1MH = 0VZ 500 td(off) VVRDDGSG === 105V5V Ω<br>Ciss 200 Pulsed<br>20m<br>10 100<br>10m VGS = 4V 0V<br>5m 5 50<br>Coss<br>tr<br>2m Crss 20 td(on)<br>1m 2<br>10<br>0.5m<br>1 5<br>0.2m<br>0.1m 0.5 2<br>0 0.5 1 1.5 0.1 0.2 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 20 50 100<br>SOURCE-DRAIN  VOLTAGE : VSD (V) DRAIN-SOURCE  VOLTAGE : VDS (V) DRAIN  CURRENT : ID (mA)<br>Fig.10  Reverse drain current vs. Fig.11  Typical capacitance vs.  Fig.12  Switching characteristics<br>source-drain voltage ( ΙΙ ) drain-source voltage (See Figures 13 and 14 for<br>the measurement circuit<br>and resultant waveforms)<br>� Switching characteristics measurement circuit<br>Pulse width<br>90%<br>VGS ID VDS VGS 10%50% 50%<br>D.U.T. RL<br>RG VDS 10% 10%<br>VDD<br>90%<br>90%<br>td (on) tr tf<br>td (off)<br>ton toff<br>Fig.13  Switching time measurement circuit Fig.14  Switching time waveforms<br>New Designs<br>Not Recommended for<br>) Ω  (A)<br> ( DR<br>DS(on)<br>FORWARD  TRANSFER   ADMITTANCE : |Yfs| (S)<br>REVERSE  DRAIN  CURRENT : I<br>STATIC  DRAIN-SOURCE ON-STATE  RESISTANCE : R<br> (A)<br>DR<br>CAPACITANCE : C (pF) SWITHING  TIME : t (ns)<br>REVERSE  DRAIN  CURRENT : I<br>**----- End of picture text -----**<br>


Rev.B 

3/3 

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Notice<br>N o t e s<br>1)  The information contained herein is subject to change without notice.<br>2) Before you use our Products, please contact our sales representative and verify the latest specifica-<br>tions :<br>3) Although ROHM is continuously working to improve product reliability and quality, semicon-<br>ductors can break down and malfunction due to various factors.<br>Therefore, in order to prevent personal injury or fire arising from failure, please take safety<br>measures such as complying with the derating characteristics, implementing redundant and<br>fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no<br>responsibility for any damages arising out of the use of our Poducts beyond the rating specified by<br>ROHM.<br>4) Examples of application circuits, circuit constants and any other information contained herein are<br>provided only to illustrate the standard usage and operations of the Products. The peripheral<br>conditions must be taken into account when designing circuits for mass production.<br>5) The technical information specified herein is intended only to show the typical functions of and<br>examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,<br>any license to use or exercise intellectual property or other rights held by ROHM or any other<br>parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of<br>such technical information.<br>6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-<br>cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in<br>this document.<br>7) The Products specified in this document are not designed to be radiation tolerant.<br>8) For use of our Products in applications requiring a high degree of reliability (as exemplified<br>below), please contact and consult with a ROHM representative : transportation equipment (i.e.<br>cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety<br>equipment, medical systems, servers, solar cells, and power transmission systems.<br>9) Do not use our Products in applications requiring extremely high reliability, such as aerospace<br>equipment, nuclear power control systems, and submarine repeaters.<br>10) ROHM shall have no responsibility for any damages or injury arising  from non-compliance with<br>the recommended usage conditions and specifications contained herein.<br>11) ROHM has used reasonable care to ensur  the accuracy of the information contained  in this<br>document. However, ROHM does not warrants that such information is error-free, and ROHM<br>shall have no responsibility for any damages arising from any inaccuracy or misprint of such<br>information.<br>12) Please use the Products in accordance with any applicable environmental laws and regulations,<br>such as the RoHS Directive. For more details, including RoHS compatibility, please contact a<br>ROHM sales office. ROHM shall have  no responsibility for any damages or losses resulting<br>non-compliance with any applicable laws or regulations.<br>13) When providing our Products and technologies contained in this document to other countries,<br>you must abide by the procedures and provisions stipulated in all applicable export laws and<br>regulations, including without limitation the US Export Administration Regulations and the Foreign<br>Exchange and Foreign Trade Act.<br>14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of<br>ROHM.<br>Thank you for your accessing to ROHM product informations.<br>More detail product informations and catalogs are available, please contact us.<br>ROHM  Customer Support System<br>http://www.rohm.com/contact/<br>www.rohm.com<br>R1102A<br>© 2013  ROHM Co., Ltd. All rights reserved.<br>New Designs<br>Not Recommended for<br>**----- End of picture text -----**<br>