2SK3018T106

2SK3018 

Transistor 

## 2.5V Drive Nch MOS FET 

## **2SK3018** 

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2SK3018<br>� Structure  � External dimensions  (Unit : mm)<br>Silicon N-channel<br>UMT3<br>MOSFET<br>2.0 0.9<br>0.3 0.2 0.7<br>� Applications  (3)<br>Interfacing, switching (30V, 100mA)  (2) (1)<br>0.65 0.65<br>1.3 0.15<br>� Features  (1) Source Each lead has same dimensions<br>(2) Gate<br>1) Low on-resistance.  (3) Drain Abbreviated symbol : KN<br>2) Fast switching speed.<br>3) Low voltage drive (2.5V) makes this device ideal for<br>portable equipment.<br>4) Drive circuits can be simple.<br>5) Parallel use is easy.<br>� Packaging specifications  � Equivalent circuit<br>Package  Taping<br>Drain<br>Code T106<br>Type<br>Basic ordering unit<br>(pieces) 3000<br>2SK3018<br>Gate<br>� Absolute maximum ratings  (Ta=25°C) ∗ [ Gate]<br>     Protection<br>Parameter Symbol Limits Unit      Diode Source<br>Drain-source voltage VDSS 30 V<br>Gate-source voltage VGSS ± 20 V ∗ [A protection diode is included between the gate]<br>   and the source terminals to protect the diode<br>Continuous ID ± 100 mA    against static electricity when the product is in use.<br>Drain current    Use a protection circuit when the fixed voltages<br>Pulsed IDP [∗] [1] ± 400 mA    are exceeded.<br>Total power dissipation PD [∗] [2] 200 mW<br>Channel temperature Tch 150 ° C<br>Storage temperature  Tstg − 55 to  + 150 ° C<br>∗ [1 Pw] [≤] [10] [µ] [s, Duty cycle] [≤] [1%]<br>∗ [2 With each pin mounted on the recommended lands.]<br>New Designs<br>Not Recommended for<br>1.25 2.1<br>0.1Min.<br>**----- End of picture text -----**<br>


## � **Thermal resistance** 

|�**Thermal resistance**||||
|---|---|---|---|
|Parameter|Symbol|Limits|Unit|
|Channel to ambient|Rth(ch-a)<br>∗|625|°C / W|
|∗With each pin mounted on the recommended lands.||||



Rev.B 

1/3 

2SK3018 

Transistor 

## � **Electrical characteristics** (Ta=25°C) 

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Parameter Symbol Min. Typ. Max. Unit Conditions<br>Gate-source leakage IGSS − − ± 1 µ A VGS = ± 20V, VDS =  0V<br>Drain-source breakdown voltage V(BR)DSS 30 − − V ID =  10 µ A,  VGS =  0V<br>Zero gate voltage drain current IDSS − − 1 µ A VDS =  30V,  VGS =  0V<br>Gate threshold voltage VGS(th) 0.8 − 1.5 V VDS =  3V, ID =  100 µ A<br>Static drain-source on-state RDS(on) − 5 8 Ω ID =  10mA, VGS =  4V<br>resistance RDS(on) − 7 13 Ω ID =  1mA, VGS =  2.5V<br>Forward transfer admittance |Yfs | 20 − − mS VDS =  3V, ID =  10mA<br>Input capacitance Ciss − 13 − pF VDS =  5V<br>Output capacitance Coss − 9 − pF VGS =  0V<br>Reverse transfer capacitance Crss − 4 − pF f  =  1MHz<br>Turn-on delay time td(on) − 15 − ns ID =  10mA, VDD    5V<br>Rise time tr − 35 − ns VGS =  5V<br>Turn-off delay time td(off) − 80 − ns RL =  500 Ω<br>Fall time tf − 80 − ns RG =  10 Ω<br>� Electrical characteristic curves<br>0.15 200m 2<br>4V VDS=3V VDS=3V<br>3V Ta=25 ° C 100m Pulsed PulsedID=0.1mA<br>Pulsed 50m<br>3.5V<br>1.5<br>20m<br>0.1<br>10m<br>5m 1<br>2.5V<br>2m Ta=125 ° C<br>0.05 1m  75 ° C<br>2V 0.5m −  2525 °° CC 0.5<br>0.2m<br>VGS=1.5V<br>00 1 2 3 4 5 0.1m0 1 2 3 4 0 − 50 − 25 0 25 50 75 100 125 150<br>DRAIN-SOURCE  VOLTAGE : VDS (V) GATE-SOURCE  VOLTAGE : VGS (V) CHANNEL  TEMPERATURE : Tch ( ° C)<br>Fig.1  Typical output characteristics Fig.2  Typical transfer characteristics Fig.3  Gate threshold voltage vs.<br>channel temperature<br>50 VGS=4V 50 VGS=2.5V 15 Ta=25 ° C<br>Pulsed Ta=125 ° C Pulsed Pulsed<br>20 Ta=125 75 25 °°° CCC 20 − 752525 °°° CCC<br>10 − 25 ° C 10 10<br>5 5<br>2 2 5 ID=0.1A<br>1 1 ID=0.05A<br>0.5 0.5 0<br>0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 5 10 15 20<br>DRAIN  CURRENT : ID (A) DRAIN  CURRENT : ID (A) GATE-SOURCE  VOLTAGE : VGS (V)<br>Fig.4   Static  drain-source  on-state   Fig.5  Static drain-source on-state  Fig.6  Static drain-source<br> resistance vs.  drain current (  Ι  )  resistance vs. drain current ( ΙΙ )        on-state resistance vs.<br>gate-source voltage<br>Rev.B  2/3<br>New Designs<br>Not Recommended for<br> (V)<br>(th)<br>GS<br>DRAIN  CURRENT : I (A)D   DRAIN  CURRENT : I(A)D<br>GATE  THRESHOLD  VOLTAGE : V<br>) ((on) Ω ) ((on) Ω ) ((on) Ω<br>DS DS DS<br>STATIC  DRAIN-SOURCE ON-STATE  RESISTANCE : R STATIC  DRAIN-SOURCE ON-STATE  RESISTANCE : R STATIC  DRAIN-SOURCE ON-STATE  RESISTANCE : R<br>**----- End of picture text -----**<br>


2SK3018 

Transistor 

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9 0.5 200m<br>VGS=4V VDS=3V VGS=0V<br>8 Pulsed Pulsed 100m Pulsed<br>0.2<br>7 Ta= − 25 ° C 50m<br>ID=100mA 0.1  25 ° C<br>546 ID=50mA 0.020.05   125 75 °° CC 20m10m5m Ta=125 −  75 2525 °°°° CCCC<br>0.01 2m<br>3<br>1m<br>0.005<br>2 0.5m<br>1 0.002 0.2m<br>0 − 50 − 25 0 25 50 75 100 125 150 0.0010.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.1m0 0.5 1 1.5<br>CHANNEL  TEMPERATURE : Tch ( ° C) DRAIN  CURRENT : ID (A) SOURCE-DRAIN  VOLTAGE : VSD (V)<br>Fig.7  Static drain-source on-state  Fig.8  Forward transfer  Fig.9  Reverse  drain  current  vs.<br>resistance vs. channel  admittance vs. drain current  source-drain  voltage (  Ι  )<br>temperature<br>200m Ta=25 ° C 50 Ta=25 ° C 1000 tf Ta=25 ° C<br>100m Pulsed f=1MHZ 500 VDD=5V<br>50m 20 VGS=0V td(off) VRGSG=10=5V Ω<br>Ciss 200 Pulsed<br>20m<br>10 100<br>10m VGS=4V 0V<br>5m 5 Coss 50 tr<br>2m Crss 20 td(on)<br>1m 2<br>10<br>0.5m<br>1 5<br>0.2m<br>0.1m 0.5 2<br>0 0.5 1 1.5 0.1 0.2 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 20 50 100<br>SOURCE-DRAIN  VOLTAGE : VSD (V) DRAIN-SOURCE  VOLTAGE : VDS (V) DRAIN  CURRENT : ID (mA)<br>Fig.10  Reverse  drain  current  vs. Fig.11  Typical capacitance vs.  Fig.12  Switching characteristics<br>   source-drain  voltage (  ΙΙ  ) drain-source voltage (See Figures 13 and 14 for<br>the measurement circuit<br>and resultant waveforms)<br>� Switching characteristics measurement circuit<br>Pulse width<br>90%<br>50% 50%<br>VGS ID VDS VGS 10%<br>RG D.U.T. RL VDS 10% 10%<br>VDD 90%<br>90%<br>td(on) tr tf<br>td(off)<br>ton toff<br>  Fig.13   Switching  time  measurement circuit Fig.14   Switching  time  waveforms<br>New Designs<br>Not Recommended for<br>) Ω  (A)<br> ( DR<br>(on)<br>DS<br>FORWARD  TRANSFER ADMITTANCE : |Yfs| (S)<br>REVERSE  DRAIN  CURRENT : I<br>STATIC  DRAIN-SOURCE ON-STATE  RESISTANCE : R<br> (A)<br>DR<br>CAPACITANCE : C (pF) SWITCHING  TIME : t (ns)<br>REVERSE  DRAIN  CURRENT : I<br>**----- End of picture text -----**<br>


Rev.B 

3/3 

Appendix 

Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1