2SK2225-80-E#T2

Datasheet 

## **2SK2225-80-E** 

## 1500V - 2A - MOS FET High Speed Power Switching 

R07DS1275EJ0300 Rev.3.00 Dec.13.2021 

## **Features** 

- High breakdown voltage (VDSS = 1500 V) 

- High speed switching 

- Low drive current 

- Quality grade:  Standard 

## **Outline** 

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RENESAS Package code: PRSS0003ZP-A, PRSS0003ZD-A<br>(Package name: TO-3PFP, TO-3PF)<br>D<br>1. Gate<br>2. Drain<br>G<br>3. Source<br>1 S<br>2<br>3<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

(Ta = 25 °C) 

|**Absolute Maximum Ratings**|||(Ta = 25 °C)|
|---|---|---|---|
|**Item**|**Symbol**|**Value**|**Unit**|
|Drain to source voltage|VDSS|1500|V|
|Gate to source voltage|VGSS|±20|V|
|Drain current|ID|2|A|
|Drainpeak current|ID(pulse)Notes1|7|A|
|Bodyto drain diode reverse drain current|IDR|2|A|
|Channel dissipation|PchNotes2|50|W|
|Channel temperature|Tch|150|°C|
|Storage temperature|Tstg|–55 to +150|°C|



Note: Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a reliability even if it is within the absolute maximum ratings.  Please consider derating condition for appropriate reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage of Semiconductor Devices) and individual reliability data. 

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 

2. Value at Tc = 25 °C 

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2SK2225-80-E 

## **Electrical Characteristics** 

(Ta = 25 °C) 

|**Electrical Characteristics**||||||(Ta = 25 °C)|
|---|---|---|---|---|---|---|
|**Item**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test conditions**|
|Drain to source breakdown voltage|V(BR)DSS|1500|—|—|V|ID= 10 mA, VGS= 0|
|Gate to source leak current|IGSS|—|—|±1|µA|VGS=±20 V, VDS= 0|
|Zerogate voltage drain current|IDSS|—|—|500|µA|VDS=1200 V, VGS= 0|
|Gate to source cutoff voltage|VGS(off)|2.0|—|4.0|V|ID= 1 mA, VDS= 10 V|
|Static drain to source on state<br>resistance|RDS(on)|—|9|12|Ω|ID= 1 A, VGS= 15 VNotes3|
|Forward transfer admittance||yfs||0.45|0.75|—|S|ID= 1 A, VDS= 20 VNotes3|
|Input capacitance|Ciss|—|990|—|pF|VDS= 10 V, VGS= 0,<br>f = 1 MHz|
|Output capacitance|Coss|—|125|—|pF||
|Reverse transfer capacitance|Crss|—|60|—|pF||
|Turn-on delaytime|td(on)|—|17|—|ns|ID= 1 A, VGS= 10 V,<br>RL= 30Ω|
|Rise time|tr|—|50|—|ns||
|Turn-off delaytime|td(off)|—|150|—|ns||
|Fall time|tf|—|50|—|ns||
|Body-drain diode forward voltage|VDF|—|0.9|—|V|IF= 2 A, VGS= 0|
|Body-drain diode reverse recovery<br>time|trr|—|1750|—|ns|IF= 2 A, VGS= 0,<br>diF/ dt = 100 A /µs|



Notes: 3. Pulse Test 

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2SK2225-80-E 

## **Main Characteristics** 

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Maximum Safe Operation Area<br>**----- End of picture text -----**<br>


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Typical Output Characteristics<br>**----- End of picture text -----**<br>


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10 5<br>Pulse Test 15 V<br>8 V<br>Ta = 25°C 10 V<br>3 4<br>1 PW = 100 µs 7 V<br>3<br>0.3<br>Operation in this area is 2 6 V<br>0.1 limited by R DS(on)<br>5 V<br>Tc = 25°C 1<br>0.03<br>1 shotNotes4 V GS  = 4 V<br>0.01<br>10 30 100 300 1000 3000 10000 0 20 40 60 80 100<br>Drain to Source Voltage  VDS  (V) Drain to Source Voltage  VDS  (V)<br>Static Drain to Source on State<br>Typical Transfer Characteristics Resistance vs. Drain Current (Typical)<br>2.0 50<br>V DS = 25 V Ta = 25V GS  = 15 V°C<br>Pulse Test<br>1.6 20 Pulse Test<br>10<br>1.2<br>5<br>0.8<br>Tc = 75°C 2<br>25°C<br>0.4 –25°C 1<br>0.5<br>0 2 4 6 8 10 0.1 0.2 0.5 1 2 5 10<br>Gate to Source Voltage  VGS  (V) Drain Current  ID  (A)<br>Static Drain to Source on State Body to Drain Diode Reverse<br>Resistance vs. Temperature (Typical) Recovery Time (Typical)<br>20 5000<br>V GS = 15 V<br>Pulse Test<br>16 2000<br>ID = 2 A 1000<br>12<br>500<br>8 0.5 A, 1 A<br>200<br>4 100 d V i  GS / d  = 0, Ta = 25 t = 100 A / µ ° s C<br>Pulse Test<br>0 50<br>–40 0 40 80 120 160 0.05 0.1 0.2 0.5 1 2 5<br>Case Temperature  TC  (°C) Reverse Drain Current  IDR  (A)<br>10<br> µs<br>  (A)Drain Current  ID   (A)Drain Current  ID<br>)Ω<br>  (<br>DS (on)<br>  (A)<br>D<br>Drain Current  I<br>Static Drain to Source on State Resistance                                                  R<br>)Ω<br>  (<br>DS (on) Reverse Recovery Time  trr  (ns)<br>Static Drain to Source on State Resistance                                                 R<br>**----- End of picture text -----**<br>


Notes: 4. Designed target value on Renesas measurement condition. (Not tested) Renesas recommends that operating conditions are designed according to a document “Power MOS FET・ IGBT Attention of Handling Semiconductor Devices”. 

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2SK2225-80-E 

Typical Capacitance vs. Drain to Source Voltage 

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10000<br>VGS = 0<br>f = 1 MHz<br>Ta = 25°C<br>Ciss<br>1000<br>100 Coss<br>Crss<br>10<br>0 10 20 30 40 50<br>Drain to Source Voltage  VDS  (V)<br>Reverse Drain Current vs.<br>Source to Drain Voltage (Typical)<br>5<br>VGS = 0<br>Ta = 25°C<br>4 Pulse Test<br>3<br>2<br>1<br>0 0.4 0.8 1.2 1.6 2.0<br>Source to Drain Voltage  VSD  (V)<br>Capacitance  C  (pF)<br>  (A)<br>DR<br>Reverse Drain Current  I<br>**----- End of picture text -----**<br>


Dynamic Input Characteristics (Typical) 

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1000 20<br>ID = 2.5 A<br>Ta = 25°C<br>800 16<br>VDD = 250 V 400 V V GS<br>600 600 V 12<br>VDS<br>400 8<br>200 VDD = 600 V 4<br>400 V<br>250 V<br>0<br>0 20 40 60 80 100<br>Gate Charge  Qg  (nC)<br>  (V)   (V)<br>DS GS<br>Drain to Source Voltage  V Gate to Source Voltage  V<br>**----- End of picture text -----**<br>


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2SK2225-80-E 

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Normalized Transient Thermal Impedance vs. Pulse Width<br>3<br>Tc = 25°C<br>Notes5<br>D = 1<br>1<br>0.5<br>0.3<br>0.1 θ                   ch – c(t) =   s (t) γ             θ•    ch – c<br>θch – c = 2.50°C/W, Tc = 25°C<br>PDM D = [PW]<br>T<br>0.03<br>PW<br>T<br>0.01<br>10 µ 100 µ 1 m 10 m 100 m 1 10<br>Pulse Width  PW  (s)<br>0.2<br>0.1<br>0.05<br>0.02<br>0.01<br>1shot pulse<br>  (t)<br>S<br>γ<br> Normalized Transient Thermal Impedance<br>**----- End of picture text -----**<br>


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Switching Time Test Circuit Waveforms<br>Vin Monitor Vout 90%<br>Monitor<br>D.U.T. Vin 10%<br>RL<br>Vout 1 0% 10%<br>Vin VDD<br>10 V 50 Ω = 30 V 90% 90%<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


Notes: 5. Designed target value on Renesas measurement condition. (Not tested) 

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2SK2225-80-E 

## **Package Dimensions** 

## **ASSEMBLED IN CHINA** 

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Package Name JEITA Package Code RENESAS Code Previous Code MASS (Typ) [g]<br>TO-3PFP — PRSS0003ZP-A TO-3PFP 6.2<br>Unit: mm<br>15.5±0.3<br>φ3.6±0.2<br>3.3±0.2<br>0.85 +0.1−0.2 0.9 +0.2−0.1<br>Pin No. 1 2 3<br>5.45BSC 5.45BSC<br>© 2018 Renesas Electronics Corporation. All rights reserved.<br>4.5±0.2<br>24.5±0.3<br>2.0±0.2<br>4.5±0.3<br>19.3±0.3<br>5.5±0.2<br>**----- End of picture text -----**<br>


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2SK2225-80-E 

## **ASSEMBLED IN KOREA** 

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Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.]<br> TO-3PF PRSS0003ZD-A  TO-3PFS 5.5g Unit: mm<br>15.5 ± 0.2 5.5 ± 0.2<br>φ3.6 ± 0.2 3.0 ± 0.2<br>2.0 ± 0.2<br>2.0 ± 0.2<br>+0.2<br>0.75 −0.1<br>3.3 ± 0.2<br>+0.2<br>0.9 −0.1<br>5.45 typ. 5.45 typ.<br>.2<br>0 10.0 ± 0.2<br> ±<br>5<br>4.<br>23.0 ± 0.2<br>.2<br>0 26.5 ± 0.2<br> ±  24.5 ± 0.2<br>0<br>2.<br>43.8 ± 0.2<br>4.0 ± 0.2<br>14.8 ± 0.2<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Ordering Information**|||
|---|---|---|
|**Orderable Part No.**|**Quantity**|**Shipping Container**|
|2SK2225-80-E#T2(ASSEMBLED IN CHINA)|25pcs|Tube|
|2SK2225-80-E#T2(ASSEMBLED IN KOREA)|30pcs|Tube|



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