2SK1317-E

## **2SK1317** 

## Silicon N Channel MOS FET 

REJ03G0929-0200 (Previous: ADE-208-1268) Rev.2.00 Sep 07, 2005 

## **Application** 

High speed power switching 

## **Features** 

- High breakdown voltage VDSS = 1500 V 

- High speed switching 

- Low drive current 

- No secondary breakdown 

- Suitable for switching regulator, DC-DC converter and motor driver 

## **Outline** 

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RENESAS Package code: PRSS0004ZE-A<br>(Package name: TO-3P)<br>D<br>1. Gate<br>G 2. Drain<br>    (Flange)<br>3. Source<br>1 S<br>2<br>3<br>**----- End of picture text -----**<br>


Rev.2.00  Sep 07, 2005  page 1 of 6 

**2SK1317** 

## **Absolute Maximum Ratings** 

(Ta = 25°C) 

||||(Ta = 25°C)|
|---|---|---|---|
|**Item**|**Symbol**|**Ratings **|**Unit**|
|Drain to source voltage|VDSS|1500|V|
|Gate to source voltage|VGSS|±20|V|
|Drain current|ID|2.5|A|
|Drainpeak current|ID(pulse)<br>*1|7|A|
|Bodyto drain diode reverse drain current|IDR|2.5|A|
|Channel dissipation|Pch*2|100|W|
|Channel temperature|Tch|150|°C|
|Storage temperature|Tstg|–55 to +150|°C|



Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 

## **Electrical Characteristics** 

(Ta = 25°C) 

|||||||(Ta = 25°C)|
|---|---|---|---|---|---|---|
|**Item**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test conditions**|
|Drain to source breakdown voltage|V(BR)DSS|1500|—|—|V|ID= 10 mA, VGS= 0|
|Gate to source leak current|IGSS|—|—|±1|µA|VGS=±20 V, VDS= 0|
|Zerogate voltage drain current|IDSS|—|—|500|µA|VDS= 1200 V, VGS= 0|
|Gate to source cutoff voltage|VGS(off)|2.0|—|4.0|V|ID= 1 mA, VDS= 10 V|
|Static drain to source on state<br>resistance|RDS(on)|—|9|12|Ω|ID= 2 A, VGS= 15 V *3|
|Forward transfer admittance||yfs||0.45|0.75|—|S|ID= 1 A, VDS= 20 V *3|
|Input capacitance|Ciss|—|990|—|pF|VDS= 10 V, VGS= 0,<br>f = 1 MHz|
|Output capacitance|Coss|—|125|—|pF||
|Reverse transfer capacitance|Crss|—|60|—|pF||
|Turn-on delaytime|td(on)|—|17|—|ns|ID= 2 A, VGS= 10 V,<br>RL= 15Ω|
|Rise time|tr|—|70|—|ns||
|Turn-off delaytime|td(off)|—|110|—|ns||
|Fall time|tf|—|60|—|ns||
|Bodyto drain diode forward voltage|VDF|—|0.9|—|V|IF= 2 A, VGS= 0|
|Body to drain diode reverse recovery<br>time|trr|—|1750|—|ns|IF= 2 A, VGS= 0,<br>diF/dt = 100 A/µs|



Note: 3. Pulse test 

Rev.2.00  Sep 07, 2005  page 2 of 6 

**2SK1317** 

## **Main Characteristics** 

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Power vs. Temperature Derating<br>120<br>80<br>40<br>0 50 100 150<br>Case Temperature  TC  (°C)<br>Typical Output Characteristics<br>5<br>15 V 10 V<br>Pulse Test 8 V<br>4<br>7 V<br>3<br>6 V<br>2<br>5 V<br>1<br>VGS = 4 V<br>0 20 40 60 80 100<br>Drain to Source Voltage  VDS  (V)<br>Drain to Source Saturation Voltage<br>vs. Gate to Source Voltage<br>50<br>Pulse Test<br>40<br>ID = 3 A<br>30<br>2 A<br>20<br>1 A<br>10<br>0.5 A<br>0 4 8 12 16 20<br>Gate to Source Voltage  VGS  (V)<br>Channel Dissipation  Pch  (W)<br>  (A)<br>D<br>Drain Current  I<br> (V)<br>DS (on)<br>Drain to Source Saturation Voltage  V<br>**----- End of picture text -----**<br>


Maximum Safe Operation Area 

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10<br>3<br>1.0<br>0.3<br>0.1<br>0.03<br>Ta = 25°C<br>0.01<br>10 30 100 300 1,000 3,000 10,000<br>Drain to Source Voltage  VDS  (V)<br>Typical Transfer Characteristics<br>2.0<br>1.6 VDS = 20 V<br>Pulse Test<br>1.2<br>0.8 75°C<br>TC = 25°C<br>0.4 –25°C<br>0 2 4 6 8 10<br>Gate to Source Voltage  VGS  (V)<br>Static Drain to Source on State<br>Resistance vs. Drain Current<br>50<br>20<br>VGS = 10 V<br>15 V<br>10<br>5<br>2<br>Pulse Test<br>1.0<br>0.5<br>0.1 0.2 0.5 1.0 2 5 10<br>Drain Current  ID  (A)<br>Operation in this area<br>is limited by RDS (on)<br>10<br>µs<br>DC Operation (T<br>C<br>= 25°<br>C)<br>PW = 10 ms (1 Shot)<br>100<br>  (A) 1 ms µs<br>D<br>Drain Current  I<br>  (A)<br>D<br>Drain Current  I<br>)Ω<br>  (<br>DS (on)<br>Static Drain to Source on State Resistance                                                   R<br>**----- End of picture text -----**<br>


Rev.2.00  Sep 07, 2005  page 3 of 6 

**2SK1317** 

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Static Drain to Source on State<br>Resistance vs. Temperature<br>20<br>ID = 2 A<br>VGS = 15 V<br>16 Pulse Test<br>0.5 A, 1 A<br>12<br>8<br>4<br>0<br>–40 0 40 80 120 160<br>Case Temperature  TC  (°C)<br>Body to Drain Diode Reverse<br>Recovery Time<br>5,000<br>2,000<br>1,000<br>500<br>200 di/dt = 100 A/µs, Ta = 25°C<br>VGS = 0<br>Pulse Test<br>100<br>50<br>0.05 0.1 0.2 0.5 1.0 2 5<br>Reverse Drain Current  IDR  (A)<br>Dynamic Input Characteristics<br>1,000 20<br>VDD = 250 V<br>800 400 V 16<br>600 V<br>600 VGS 12<br>VDS<br>400 8<br>VDD = 600 V<br>200 400 V 4<br>250 V ID = 2.5 A<br>0<br>0 20 40 60 80 100<br>Gate Charge  Qg  (nc)<br>)Ω<br>  (<br>DS (on)<br>Static Drain to Source on State Resistance                                                R<br>Reverse Recovery Time  trr  (ns)<br>  (A)   (V)<br>DS GS<br>Drain to Source Voltage  V Gate to Source Voltage  V<br>**----- End of picture text -----**<br>


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Forward Transfer Admittance<br>vs. Drain Current<br>10<br>VDS = 20 V<br>5 Pulse Test<br>2 –25°C<br>Ta = 25°C<br>1.0 75°C<br>0.5<br>0.2<br>0.1<br>0.05 0.1 0.2 0.5 1.0 2 5<br>Drain Current  ID  (A)<br>Typical Capacitance vs.<br>Drain to Source Voltage<br>10,000<br>VGS = 0<br>f = 1 MHz<br>Ciss<br>1,000<br>100 Coss<br>Crss<br>10<br>0 10 20 30 40 50<br>Drain to Source Voltage  VDS  (V)<br>Switching Characteristics<br>1,000<br>VGS = 10 V  VDD = 30 V•   •<br>500 PW = 2 µs, duty < 1%<br>t<br>d (off)<br>200<br>100<br>tf<br>50<br>tr<br>20 td (on)<br>10<br>0.05 0.1 0.2 0.5 1.0 2 5<br>Drain Current  ID  (A)<br>  (S)<br><br>yfs<br><br>Forward Transfer Admittance<br>Capacitance  C  (pF)<br>Switching Time  t  (ns)<br>**----- End of picture text -----**<br>


Rev.2.00  Sep 07, 2005  page 4 of 6 

**2SK1317** 

Reverse Drain Current vs. Source to Drain Voltage 

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5<br>Pulse Test<br>4<br>3<br>2<br>1<br>10 V, 15 V<br>VGS = 0, –5 V<br>0<br>0 0.4 0.8 1.2 1.6 2.0<br>Source to Drain Voltage  VSD  (V)<br>  (A)<br>DR<br>Reverse Drain Current  I<br>**----- End of picture text -----**<br>


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Normalized Transient Thermal Impedance vs. Pulse Width<br>3<br>TC = 25°C<br>D = 1<br>1.0<br>0.5<br>0.3 0.2<br>θch–c (t) = γS (t) • θch–c<br>0.1 θch–c = 1.25°C/W, TC = 25°C<br>PDM<br>PW<br>0.03 D =<br>T<br>PW<br>T<br>0.01<br>10 µ 100 µ 1 m 10 m 100 m 1 10<br>Pulse Width  PW  (S)<br>Switching Time Test Circuit Waveforms<br>Vin Monitor 90%<br>Vout Monitor<br>Vin<br>10%<br>D.U.T<br>RL Vout 10% 10%<br>50 Ω<br>Vin  VDD 90% 90%<br>10 V = 30 V td (on) t r td (off) t f<br>0.1<br>0.05<br>0.02<br>1 Shot Pulse0.01<br>  (t)<br>S<br>γ<br> Normalized Transient Thermal Impedance<br>**----- End of picture text -----**<br>


Rev.2.00  Sep 07, 2005  page 5 of 6 

**2SK1317** 

## **Package Dimensions** 

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JEITA Package Code RENESAS Code Package Name MASS[Typ.]<br>SC-65 PRSS0004ZE-A TO-3P / TO-3PV 5.0g<br>Unit: mm<br>15.6 ± 0.3 4.8 ± 0.2<br>φ3.2 ± 0.2 1.5<br>1.6<br>1.4 Max 2.0<br>2.8<br>1.0 ± 0.2 0.6 ± 0.2<br>3.6 0.9<br>1.0<br>5.45 ± 0.5 5.45 ± 0.5<br>1.0 5.0 ± 0.3<br>0.5<br>19.9 ± 0.2<br>14.9 ± 0.2<br>2.0 0.3<br>18.0 ± 0.5<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Part Name**|**Quantity**|**Shipping Container**|
|---|---|---|
|2SK1317-E|360pcs|Box(Tube)|



Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. 

Rev.2.00  Sep 07, 2005  page 6 of 6 

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