2SJ652-1E

**Ordering number : EN7625A** 

## **2SJ652** 

## **P-Channel Power MOSFET –60V, –28A, 38m** Ω **, TO-220F-3SG** 

http://onsemi.com 

## **Features** 

- ON-resistance  RDS(on)1=28.5mΩ(typ.) 

- Input capacitance  Ciss=4360pF (typ.) 

- 4V drive 

## **Specifi cations** 

## **Absolute Maximum Ratings** at Ta=25°C 

|**Absolute Maximum Ratingsgss**at Ta=25°C|at Ta=25°C||||
|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|Unit|
|Drain-to-Source Voltage|VDSS||--60|V|
|Gate-to-Source Voltage|VGSS||±20|V|
|Drain Current(DC)|ID||--28|A|
|Drain Current(Pulse)|IDP|PW≤10μs, dutycycle≤1%|--112|A|
|Allowable Power Dissipation|PD||2.0|W|
|||Tc=25°C|30|W|
|Channel Temperature|Tch||150|°C|
|Storage Temperature|Tstg||--55 to +150|°C|
|Avalanche Energy (Single Pulse)*1|EAS||343|mJ|
|Avalanche Current *2|IAV||--28|A|



Note : * 1 VDD=--30V, L=500μH, IAV=--28A (Fig.1) * 2 L≤500μH, single pulse 

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

## **Package Dimensions** 

## **Product & Package Information** 

unit : mm (typ) 

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• Package  : TO-220F-3SG<br>7529-001 • JEITA, JEDEC  : SC-67<br>10.16 4.7 2SJ652-1E • Minimum Packing Quantity  : 50 pcs./magazine<br>3.18 2.54<br>Marking  Electrical Connection<br>2<br>A<br>J652<br>1<br>2.76 LOT No.<br>1.47 MAX<br>= 0.8 DETAIL-A (0.84) .<br>3<br>1 2 3<br>0.5 1 : Gate<br>FRAME 2 : Drain<br>EMC 3 : Source<br>=a 2.54 2.54 TO-220F-3SG<br>3.3<br>6.68<br>15.87<br>15.8<br>3.23<br>12.98<br>)(   1.0<br>**----- End of picture text -----**<br>


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7529-001<br>**----- End of picture text -----**<br>


Semiconductor Components Industries, LLC, 2013 **July, 2013** 

51612QA TKIM TC-00002759/72503 TSIM TA-4245  No.7625-1/7 

**2SJ652** 

## **Electrical Characteristics** at Ta=25°C 

|**Electrical Characteristics **at Ta|=25°C||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|||Unit|
||||min|typ|max||
|Drain-to-Source Breakdown Voltage|V(BR)DSS|ID=--1mA, VGS=0V|--60|||V|
|Zero-Gate Voltage Drain Current|IDSS|VDS=--60V, VGS=0V|||--1|μA|
|Gate-to-Source Leakage Current|IGSS|VGS=±16V, VDS=0V|||±10|μA|
|Cutoff Voltage|VGS(off)|VDS=--10V, ID=--1mA|--1.2||--2.6|V|
|Forward Transfer Admittance|| yfs||VDS=--10V, ID=--14A|18|26||S|
|Static Drain-to-Source On-State Resistance|RDS(on)1|ID=--14A, VGS=--10V||28.5|38|mΩ|
||RDS(on)2|ID=--14A, VGS=--4V||39|55.5|mΩ|
|Input Capacitance|Ciss|VDS=--20V, f=1MHz||4360||pF|
|Output Capacitance|Coss|||470||pF|
|Reverse Transfer Capacitance|Crss|||335||pF|
|Turn-ON Delay Time|td(on)|See Fig.2||33||ns|
|Rise Time|tr|||210||ns|
|Turn-OFF Delay Time|td(off)|||310||ns|
|Fall Time|tf|||180||ns|
|Total Gate Charge|Qg|VDS=--30V, VGS=--10V, ID=--28A||80||nC|
|Gate-to-Source Charge|Qgs|||15||nC|
|Gate-to-Drain “Miller” Charge|Qgd|||12||nC|
|Diode Forward Voltage|VSD|IS=--28A, VGS=0V||--0.96|--1.2|V|



## **Fig.1 Avalanche Resistance Test Circuit** 

**Fig.2 Switching Time Test Circuit** 

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VIN VDD= --30V<br>L 0V<br>--10V<br>≥ 50 Ω<br>RG ID= --14A<br>VIN RL=2.1 Ω<br>2SJ652 D VOUT<br>PW=10 μ s<br>0V 50 Ω VDD D.C. ≤ 1%<br>--10V<br>G<br>2SJ652<br>P.G 50 Ω S<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Ordering Information**||||
|---|---|---|---|
|Device|Package|Shipping|memo|
|2SJ652-1E|TO-220F-3SG|50pcs./magazine|Pb Free|



No.7625-2/7 

**2SJ652** 

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ID  --  VDS ID  --  VGS<br>--50 --50<br>Tc=25°C --4V VDS= --10V<br>--40 --40<br>--30 --30<br>--20 --20<br>VGS= --3V<br>--10 --10<br>0 0<br>0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0<br>Drain-to-Source Voltage, VDS  --  V IT06535 Gate-to-Source Voltage, VGS  --  V IT06536<br>RDS(on)  --  VGS RDS(on)  --  Tc<br>100 70<br>ID= --14A<br>60<br>80<br>50<br>60<br>40<br>30<br>40<br>20<br>20<br>10<br>0 0<br>--2 --3 --4 --5 --6 --7 --8 --9 --10 --50 --25 0 25 50 75 100 125 150<br>Gate-to-Source Voltage, VGS  --  V IT06537 Case Temperature, Tc  --  °C IT06538<br>| yfs  |   --  ID IF  --  VSD<br>100 7<br>VDS= --10V 5 VGS=0V<br>7 3<br>2<br>5<br>--10<br>5 [7]<br>3<br>3<br>2<br>2<br>--1.0<br>5 [7]<br>10 3<br>2<br>7 --0.1<br>5 5 [7]<br>3<br>2<br>3<br>--0.01<br>2 57<br>3<br>2<br>1.0 --0.001<br>--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 0 --0.3 --0.6 --0.9 --1.2 --1.5<br>Drain Current, ID  --  A IT06539 Diode Forward Voltage, VSD  --  V IT06540<br>SW Time  --  ID Ciss,  Coss,  Crss  --  VDS<br>7 7<br>f=1MHz<br>5 5<br>3 3<br>2 2<br>100 1000<br>7 7<br>5 5<br>td(on)<br>3 3<br>2 2<br>VDD= --30V<br>10 VGS= --10V 100<br>--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 0 --5 --10 --15 --20 --25 --30<br>Drain Current, ID  --  A IT06541 Drain-to-Source Voltage, VDS  --  V IT06542<br>tf<br>td(off)<br>25°C<br>--25°C<br>Ciss<br>Tc=75°C<br>Crss<br>Coss<br>ID= --14A, VGS= --10V<br>tr<br>ID= --14A, VGS= --4V<br>°C<br>75<br>°C<br>25<br>°C<br>Tc= --25<br>°C<br>25<br>°C<br>75<br>25°C<br>--6V<br>°C<br>Tc= --25<br>--10V<br>°C<br>75<br>°C<br>25<br>°C<br>Tc=75<br>°C<br>Tc= --25<br>°C<br>--25<br>Drain Current, ID  --  A Drain Current, ID  --  A<br>Ω Ω<br>Static Drain-to-Source On-State Resistance, RDS(on)  --  m Static Drain-to-Source On-State Resistance, RDS(on)  --  m<br>|  --  S<br>fs<br>y<br>|<br>Forward Current, IF  --  A<br>Forward Transfer Admittance,<br>Ciss,  Coss,  Crss  --  pF<br>Switching Time, SW Time  --  ns<br>**----- End of picture text -----**<br>


No.7625-3/7 

**2SJ652** 

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VGS  --  Qg A S O<br>--10 3<br>2<br>--9<br>--100<br>--8 7<br>5<br>--7 3<br>2<br>--6<br>--10<br>7<br>--5 5<br>3<br>--4<br>2 Operation in this area<br>--3 --1.0 is limited by RDS(on).<br>7<br>--2 5<br>--1 32 Tc=25 ° C<br>0 --0.1 Single pulse<br>0 10 20 30 40 50 60 70 80 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100<br>Total Gate Charge, Qg  --  nC IT06559 Drain-to-Source Voltage, VDS  --  V IT16830<br>PD  --  Ta PD  --  Tc<br>2.5 40<br>35<br>2.0<br>30<br>25<br>1.5<br>20<br>1.0<br>15<br>10<br>0.5<br>5<br>0 0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Ambient Temperature, Ta  --  °C IT06545 Case Temperature, Tc  --  °C IT06544<br>IDP= --112A (PW≤10μs)<br>ID= --28A<br>100ms<br>DC operation<br>1ms<br>10ms<br>100<br>μs<br>10<br>μs<br>Drain Current, ID  --  A<br>Gate-to-Source Voltage, VGS  --  V<br>Allowable Power Dissipation, PD  --  W Allowable Power Dissipation, PD  --  W<br>**----- End of picture text -----**<br>


No.7625-4/7 

**2SJ652** 

## **Magazine Specifi cation** 

2SJ652-1E 

No.7625-5/7 

**2SJ652** 

**Outline Drawing** 2SJ652-1E 

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Mass (g) Unit<br>1.8<br>* For reference [mm]<br>**----- End of picture text -----**<br>


No.7625-6/7 

**2SJ652** 

Note on usage : Since the 2SJ652 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 

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PS No.7625-7/7