2SD1816S-TL-H.
Bipolar (BJT) Single Transistor, NPN, 100 V, 4 A, 20 W, TO-252 (DPAK), Surface Mount
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- SVHC: No SVHC (15-Jan-2018)
- No. of Pins: 3Pins
- Product Range: 2SD1816
- Qualification: -
- Power Dissipation: 20W
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 180MHz
- Transistor Case Style: TO-252 (DPAK)
- DC Current Gain hFE Min: 140hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 4A
- Collector Emitter Voltage Max: 100V
| Delivery and price | |
|---|---|
| Units per pack | 700 |
| Price | 0.365 € |
| Current stock | 10+ |
| Lead time | 30 days |
## **2SB1216, 2SD1816 Bipolar Transistor** − − **( )100V, ( )4A, Low VCE(sat), (PNP)NPN Single** ~~—~~ @ www.onsemi.com **Features** • Low Collector to Emitter Saturation Voltage - Small and Slim Package Facilitating Compactness of Sets ## **ELECTRICAL CONNECTION** - High fT - Good Linearity of hFE - Fast Switching Time ## **Typical Applications** - Suitable for Relay Drivers - High Speed Inverters - Converters - Other General High Current Switching Applications **==> picture [171 x 85] intentionally omitted <==** **----- Start of picture text -----**<br> 2,4 2,4<br>1 1<br>1 : Base<br>2 : Collector<br>4 1 4 3 : Emitter<br>3 3 4 : Collector<br>2SB1216 2SD1816<br>**----- End of picture text -----**<br> **MARKING** **SPECIFICATIONS** ( ) : 2SB1216 **ABSOLUTE MAXIMUM RATING** at Ta = 25 ° C (Note 1) Parameter Symbol Value Unit **B1216 D1816** Collector to Base Voltage VCBO ( − ) 120 V Collector to Emitter Voltage VCEO ( − ) 100 V RANK LOT No. RANK LOT No. Emitter to Base Voltage VEBO ( − ) 6 V Collector Current IC ( − ) 4 A Collector Current (Pulse) ICP ( − ) 8 A 1 W Collector Dissipation Tc=25 ° C PC 20 W 4 Junction Temperature Tj 150 ° C 4 ~~=~~ Storage Temperature Tstg − 55 to +150 ~~a~~ ° C 2 Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage 1 the device. If any of these limits are exceeded, device functionality should not 3 be assumed, damage may occur and reliability may be affected. 1 % **IPAK / TP DPAK / TP-FA** »® 2 3 ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 7 of this data sheet. **©** Semiconductor Components Industries, LLC, 2016 **March 2016 - Rev. 2** **1** Publication Order Number : **2SB1216_2SD1816/D** **2SB1216, 2SD1816** ## **ELECTRICAL CHARACTERISTICS** at Ta = 25 ° C (Note 2) |**ELECTRICAL CHARACTERISTIC**|**S**at Ta=25°C|(Note 2)||||| |---|---|---|---|---|---|---| |Parameter|Symbol|Conditions||Value||Unit| ||||min|typ|max|| |Collector Cutoff Current|ICBO|VCB=(−)100V, IE=0A|||(−)1|μA| |Emitter Cutoff Current|IEBO|VEB=(−)4V, IC=0A|||(−)1|μA| |DC Current Gain|hFE1|VCE=(−)5V, IC=(−)0.5A|140*||400*|| ||hFE2|VCE=(−)5V,IC=(−)3A|40|||| |Gain-Bandwidth Product|fT|VCE=(−)10V, IC=(−)0.5A||(130)180||MHz| |Output Capacitance|Cob|VCB=(−)10V, f=1MHz||(65)40||pF| |Collector to Emitter Saturation<br>Voltage|VCE(sat)|IC=(−)2A, IB=(−)0.2A||(−200) 150|(−500) 400|mV| |Base to Emitter Saturation Voltage|VBE(sat)|IC=(−)2A, IB=(−)0.2A||(−)0.9|(−)1.2|V| |Collector to Base Breakdown<br>Voltage|V(BR)CBO|IC=(−)10μA, IE=0A|(−)120|||V| |Collector to Emitter Breakdown<br>Voltage|V(BR)CEO|IC=(−)1mA, RBE=**∞**|(−)100|||V| |Emitter to Base Breakdown Voltage|V(BR)EBO|IE=(−)10μA, IC=0A|(−) 6|||V| |Turn-On Time|ton|See specified Test<br>Circuit||100||ns| |Storage Time|tstg|||(800) 900||ns| |Fall Time|tf|||50||ns| Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *: The 2SB1216/2SD1816 are classified by 0.5A hFE as follows: |Rank|S|T| |---|---|---| |hFE|140 to 280|200 to 400| ## **Fig.1 Switching Time Test Circuit** **==> picture [165 x 136] intentionally omitted <==** **www.onsemi.com** **2** **2SB1216, 2SD1816** **==> picture [218 x 727] intentionally omitted <==** **==> picture [187 x 727] intentionally omitted <==** **www.onsemi.com** **3** **2SB1216, 2SD1816** **==> picture [226 x 729] intentionally omitted <==** **==> picture [223 x 740] intentionally omitted <==** **www.onsemi.com** **4** **2SB1216, 2SD1816** **PACKAGE DIMENSIONS** unit : mm **IPAK / TP** CASE 369AJ ISSUE O 1 : Base 2 : Collector 3 : Emitter 4 : Collector **www.onsemi.com** **5** **2SB1216, 2SD1816** ## **PACKAGE DIMENSIONS** unit : mm **DPAK / TP-FA** CASE 369AH ISSUE O **==> picture [48 x 43] intentionally omitted <==** **----- Start of picture text -----**<br> 1 : Base<br>2 : Collector<br>3 : Emitter<br>4 : Collector<br>**----- End of picture text -----**<br> ## **Recommended Soldering Footprint** **==> picture [94 x 155] intentionally omitted <==** **----- Start of picture text -----**<br> 7.0<br>1.5<br>2.3 2.3<br>7.0<br>2.0<br>2.5<br>**----- End of picture text -----**<br> **www.onsemi.com** **6** **2SB1216, 2SD1816** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**|||| |---|---|---|---| |Device|Marking|Package|Shipping (Qty / Packing)| |2SB1216S-E|B1216|IPAK / TP<br>(Pb-Free)|500/ bag| |2SB1216T-E|B1216||| |2SD1816S-E|D1816||| |2SD1816T-E|D1816||| |2SB1216S-H|B1216|IPAK / TP<br>(Pb-Free / Halogen Free)|| |2SB1216T-H|B1216||| |2SD1816S-H|D1816||| |2SD1816T-H|D1816||| |2SB1216S-TL-E|B1216|DPAK / TP-FA<br>(Pb-Free)|700/ Tape & Reel| |2SB1216T-TL-E|B1216||| |2SD1816S-TL-E|D1816||| |2SD1816T-TL-E|D1816||| |2SB1216S-TL-H|B1216|DPAK / TP-FA<br>(Pb-Free / Halogen Free)|| |2SB1216T-TL-H|B1216||| |2SD1816S-TL-H|D1816||| |2SD1816T-TL-H|D1816||| † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiariesin the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **www.onsemi.com** **7**
Updated at March 22, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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