Illustrative purposes only
2SD1816S-E
Bipolar (BJT) Single Transistor, NPN, 100 V, 4 A, 20 W, TO-251 (IPAK), Through Hole
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 3Pins
- Product Range: 2SD1816
- Power Dissipation: 20W
- DC Current Gain hFE: 140hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- Transition Frequency: 180MHz
- Transistor Case Style: TO-251 (IPAK)
- DC Current Gain hFE Min: 140hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 4A
- Collector Emitter Voltage Max: 100V
Delivery and price | |
---|---|
Units per pack | 1000 |
Price | 0.456 € |
Current stock | N/A |
Lead time | 30 days |