2SD1815S-E.

Bipolar (BJT) Single Transistor, NPN, 100 V, 3 A, 20 W, TO-251 (IPAK), Through Hole

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
SVHC: No SVHC (15-Jan-2018)
No. of Pins: 3Pins
Product Range: 2SD1815
Qualification: -
Power Dissipation: 20W
Transistor Mounting: Through Hole
Transistor Polarity: NPN
Transition Frequency: 180MHz
Transistor Case Style: TO-251 (IPAK)
DC Current Gain hFE Min: 140hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 3A
Collector Emitter Voltage Max: 100V

Delivery and price
Units per pack	1000
Price	0.193 €
Current stock	10+
Lead time	30 days

Datasheet

- **Ordering number : EN2539C 2SB1215/2SD1815** 

- ~~—_~~ @ 

## **Ordering number : EN2539C 2SB1215/2SD1815** ~~—_~~ **Bipolar Transistor (–)100V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA** 

http://onsemi.com 

## **Applications** 

- Relay drivers, high-speed inverters, converters, and other general high-current switching applications 

## **Features** 

- Low collector to emitter saturation voltage 

> [•] Excllent linearity of hFE 

- Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim 

- High fT 

   - [•] Fast switching time 

- Halogen free compliance 

## **Specifi cations** (   ): 2SB1215 

**Absolute Maximum Ratings** at Ta=25°C 

Parameter Symbol Conditions Ratings Unit Collector to Base Voltage VCBO (--)120 V Collector to Emitter Voltage VCEO (--)100 V Emitter to Base Voltage VEBO (--)6 V Collector Current IC (--)3 A ~~=e~~ Collector Current (Pulse) ICP (--)6 A Continued on next page. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

**Package Dimensions** unit : mm (typ) **Package Dimensions** unit : mm (typ) 7518-003 7003-003 

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6.5 2.3 6.5 2.3<br>5.0 0.5 2SB1215S-E 5.0 0.5 2SB1215S-TL-E<br>4 2SB1215S-H 4 2SB1215S-TL-H<br>2SB1215T-E 2SB1215T-TL-E<br>2SB1215T-H 2SB1215T-TL-H<br>2SD1815S-E 2SD1815S-TL-E<br>2SD1815S-H 2SD1815S-TL-H<br>0.85 2SD1815T-E 0.85 0.5 2SD1815T-TL-E<br>0.7<br>1.2 2SD1815T-H 2SD1815T-TL-H<br>1 2 3<br>0.6 0.5 0.6 0 to 0.2<br>1 : Base<br>1 : Base 1.2<br>2 : Collector<br>2 : Collector<br>1 2 3 3 : Emitter<br>3 : Emitter<br>4 : Collector<br>4 : Collector 2.3 2.3<br>al a<br>2.3 2.3 TP TP-FA<br>Product & Package Information<br>• Package : TP  • Package : TP-FA<br>• JEITA, JEDEC : SC-64, TO-251  • JEITA, JEDEC : SC-63, TO-252<br>• Minimum Packing Quantity : 500 pcs./bag Minimum Packing Quantity : 500 pcs./bag  : 500 pcs./bag 500 pcs./bag  • Minimum Packing Quantity : 700 pcs./reel<br>1.5 1.5<br>5.5 7.0 5.5 7.0<br>1.2<br>.8 2.5<br>.8 .6 0<br>0 1 7.5<br>**----- End of picture text -----**<br>


- Minimum Packing Quantity : 500 pcs./bag Minimum Packing Quantity : 500 pcs./bag  : 500 pcs./bag 500 pcs./bag 

**==> picture [483 x 80] intentionally omitted <==**

**----- Start of picture text -----**<br>
Marking   Packing Type (TP-FA) : TL  Electrical Connection<br>(TP, TP-FA) 2,4 2,4<br>B1215 D1815<br>1 1<br>RANK LOT No. RANK LOT No.<br>TL<br>2SB1215 3 2SD1815 3<br>**----- End of picture text -----**<br>


Semiconductor Components Industries, LLC, 2013 

**November, 2013** 

N2713 TKIM TC-00003057/N2503TN (KT)/92098HA (KT)/40196TS (KOTO) 8-9913/8229MO/4097TA, TS  No.2539-1/7 

**2SB1215/2SD1815** 

## Continued from preceding page. 

|Continued from preceding page.|||||
|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|Unit|
|Collector Dissipation|PC||1|W|
|||Tc=25°C|20|W|
|Junction Temperature|Tj||150|°C|
|Storage Temperature|Tstg||--55 to +150|°C|



## **Electrical Characteristics** at Ta=25°C 

|**Electrical Characteristics**at Ta|=25°C||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|||Unit|
||||min|typ|max||
|Collector Cutoff Current|ICBO|VCB=(--)100V, IE=0A|||(--)1|μA|
|Emitter Cutoff Current|IEBO|VEB=(--)4V, IC=0A|||(--)1|μA|
|DC Current Gain|hFE1|VCE=(--)5V, IC=(--)0.5A|140*||400*||
||hFE2|VCE=(--)5V, IC=(--)2A|40||||
|Gain-Bandwidth Product|fT|VCE=(--)10V, IC=(--)0.5A||(130)180||MHz|
|Output Capacitance|Cob|VCB=(--)10V, f=1MHz||(40)25||pF|
|Collector to Emitter Saturation Voltage|VCE(sat)|IC=(--)1.5A, IB=(--)0.15A||(--200)150|(--500)400|mV|
|Base to Emitter Saturation Voltage|VBE(sat)|IC=(--)1.5A, IB=(--)0.15A||(--)0.9|(--)1.2|V|
|Collector to Base Breakdown Voltage|V(BR)CBO|IC=(--)10μA, IE=0A|(--)120|||V|
|Collector to Emitter Breakdown Voltage|V(BR)CEO|IC=(--)1mA, RBE=∞|(--)100|||V|
|Emitter to Base Breakdown Voltage|V(BR)EBO|IE=(--)10μA, IC=0A|(--)6|||V|
|Turn-On Time|ton|See specif ed Test Circuit.||100||ns|
|Storage Time|tstg|||(800)900||ns|
|Fall Time|tf|||50||ns|



* : The 2SB1215/2SD1815 are classifi ed by 0.5A hFE as follows : 

|Rank|S|T|
|---|---|---|
|hFE|140 to 280|200 to 400|



## **Switching Time Test Circuit** 

**==> picture [162 x 105] intentionally omitted <==**

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IB1<br>PW=20 � s OUTPUT<br>D.C. � 1% IB2<br>INPUT VR RB<br>50 �<br>+ +<br>100 � F 470 � F<br>VBE= --5V VCC=50V<br>**----- End of picture text -----**<br>


IC=10IB1= --10IB2=1.5A For PNP, the polarity is reversed. 

## **Ordering Information** 

|**Ordering Information**||||
|---|---|---|---|
|Device|Package|Shipping|memo|
|2SB1215S-E|TP|500pcs./bag|Pb Free|
|2SB1215S-H|TP|500pcs./bag|Pb Free and Halogen Free|
|2SB1215T-E|TP|500pcs./bag|Pb Free|
|2SB1215T-H|TP|500pcs./bag|Pb Free and Halogen Free|
|2SD1815S-E|TP|500pcs./bag|Pb Free|
|2SD1815S-H|TP|500pcs./bag|Pb Free and Halogen Free|
|2SD1815T-E|TP|500pcs./bag|Pb Free|
|2SD1815T-H|TP|500pcs./bag|Pb Free and Halogen Free|
|2SB1215S-TL-E|TP-FA|700pcs./reel|Pb Free|
|2SB1215S-TL-H|TP-FA|700pcs./reel|Pb Free and Halogen Free|
|2SB1215T-TL-E|TP-FA|700pcs./reel|Pb Free|
|2SB1215T-TL-H|TP-FA|700pcs./reel|Pb Free and Halogen Free|
|2SD1815S-TL-E|TP-FA|700pcs./reel|Pb Free|
|2SD1815S-TL-H|TP-FA|700pcs./reel|Pb Free and Halogen Free|
|2SD1815T-TL-E|TP-FA|700pcs./reel|Pb Free|
|2SD1815T-TL-H|TP-FA|700pcs./reel|Pb Free and Halogen Free|



No.2539-2/7 

**2SB1215/2SD1815** 

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IC -- VCE IC -- VCE<br>--2.0 2.0<br>2SB1215 2SD1815<br>--1.6 1.6<br>--1.2 1.2<br>--0.8 0.8<br>--0.4 0.4<br>0 IB=0 0 IB=0<br>0 --1 --2 --3 --4 --5 0 1 2 3 4 5<br>Collector to Emitter Voltage, VCE  --  V ITR09233 Collector to Emitter Voltage, VCE  --  V ITR09234<br>IC -- VCE IC -- VCE<br>--1.0 1.0<br>2SB1215 2SD1815<br>--0.8 0.8<br>--0.6 0.6<br>--0.4 0.4<br>--0.2 0.2<br>0 IB=0 0 IB=0<br>0 --10 --20 --30 --40 --50 0 10 20 30 40 50<br>Collector to Emitter Voltage, VCE  --  V ITR09235 Collector to Emitter Voltage, VCE  --  V ITR09236<br>IC -- VBE IC -- VBE<br>--3.5 3.5<br>2SB1215 2SD1815<br>VCE= --5V VCE=5V<br>--3.0 3.0<br>--2.5 2.5<br>--2.0 2.0<br>--1.5 1.5<br>--1.0 1.0<br>--0.5 0.5<br>0 0<br>0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 0 0.2 0.4 0.6 0.8 1.0 1.2<br>Base to Emitter Voltage, VBE  --  V ITR09237 Base to Emitter Voltage, VBE  --  V ITR09238<br>hFE  --  IC hFE  --  IC<br>1000 1000<br>2SB1215 2SD1815<br>7<br>5 V CE = --5V 5 V CE =5V<br>3 3<br>2 2<br>100 100<br>7<br>5 5<br>3 3<br>2 2<br>10 10<br>7<br>5 5<br>5 --0.01 2 3 5 --0.1 2 3 5 --1.0 2 3 5 --10 5 0.01 2 3 5 0.1 2 3 5 1.0 2 3 5 10<br>Collector Current, IC  --  A ITR09239 Collector Current, IC  --  A ITR09240<br>--25°C<br>Ta=75°C<br>25°C<br>2mA<br>0.5mA<br>1.0mA<br>--2mA<br>--0.5mA<br>6mA<br>Ta=75°C<br>--4mA<br>4mA<br>--6mA<br>1.5mA<br>25°C<br>--25°C<br>--1.0mA<br>--8mA<br>2.0mA<br>2.5mA<br>--12mA<br>--10mA<br>--1.5mA<br>10mA<br>3.0mA<br>--2.0mA<br>4.0mA<br>--14mA<br>--2.5mA<br>3.5mA<br>12mA<br>8mA<br>--3.0mA<br>5.0mA 4.5mA<br>--3.5mA<br>--4.0mA<br>--20mA 14mA16mA 18mA 20mA<br>--18mA<br>--16mA<br>°C<br>Ta=75<br>°C<br>Ta=75 °C<br>25<br>°C<br>25<br>°C<br>--25<br>°C<br>--25<br>Collector Current, IC  --  A Collector Current, IC  --  A<br>Collector Current, IC  --  A Collector Current, IC  --  A<br>Collector Current, IC  --  A Collector Current, IC  --  A<br>DC Current Gain, hFE DC Current Gain, hFE<br>**----- End of picture text -----**<br>


No.2539-3/7 

**2SB1215/2SD1815** 

**==> picture [483 x 736] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC -- VBE Cob  --  VCB<br>1000 100<br>VCE=5V 7<br>5<br>800<br>3<br>2<br>600<br>10<br>7<br>400<br>5<br>3<br>200<br>2<br>0 1.0<br>0 0.2 0.4 0.6 0.8 1.0 1.2 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2<br>Base to Emitter Voltage, VBE  --  V ITR03222 Collector to Base Voltage,  VCB  --  V ITR03223<br>hFE -- IC fT  --  IC<br>1000 5<br>7 Pulse<br>5 3<br>3 2<br>2<br>100<br>100<br>7<br>5 7<br>3 5<br>2<br>3<br>10<br>2<br>7<br>5<br>3 10<br>3 5 7 10 2 3 5 7 100 2 3 5 7 1000 2 5 7 10 2 3 5 7 100 2 3 5 7 1000<br>Collector Current, IC  --  mA ITR03225 Collector Current,  IC  --  mA ITR03227<br>VCE(sat) -- IC S O A<br>10 5<br>IC / IB=10 3 I CP =1.5A Ta=25 ° C<br>5 2 IC=0.7A Single pulse<br>3 1000<br>2<br>5<br>1.0 3<br>2<br>5<br>100<br>3<br>2 5<br>3<br>0.1 2<br>5 10<br>3 5<br>2 3<br>3 5 7 10 2 3 5 7 100 2 3 5 7 1000 2 1.0 2 3 5 7 10 2 3 5 7 100 2 3<br>Collector Current, IC  --  mA ITR03228 Collector to Emitter Voltage, VCE  --  V ITR03229<br>PC -- Ta<br>800<br>600<br>400<br>200<br>0<br>0 20 40 60 80 100 120 140 160<br>Ambient Temperature, Ta  --  °C ITR03230<br>5V<br>VCE=10V<br>10ms<br>DC operation<br>100ms<br>1ms<br>VCE=2V<br>5V<br>10V<br>Collector Current, IC  --  mA<br>Common Base Output Capacitance,  Cob  --  pF<br>DC Current Gain, hFE<br>Gain-Bandwidth Product,  fT  --  MHz<br>Collector Current, IC  --  mA<br>Collector to Emitter Saturation Voltage, VCE(sat)  --  V<br>Collector Dissipation, PC  --  mW<br>**----- End of picture text -----**<br>


No.2539-4/7 

**2SB1215/2SD1815** 

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**----- Start of picture text -----**<br>
PC  --  Tc<br>24<br>2SB1215 / 2SD1815<br>20<br>16<br>12<br>8<br>4<br>0<br>0 20 40 60 80 100 120 140 160<br>Case Temperature, Tc  --  °C ITR09249<br>Collector Dissipation, PC  --  W<br>**----- End of picture text -----**<br>


No.2539-5/7 

**2SB1215/2SD1815** 

## **Outline Drawing** 

## **Land Pattern Example** 

- 2SB1215S-TL-E, 2SB1215S-TL-H, 2SB1215T-TL-E2SB1215T-TL-H, 2SD1815S-TL-E, 2SD1815S-TL-H, 2SD1815T-TL-E, 2SD1815T-TL-H 

**==> picture [482 x 370] intentionally omitted <==**

**----- Start of picture text -----**<br>
Mass (g) Unit Unit: mm<br>0.282<br>* For reference [mm]<br>7.0<br>1.5<br>2.3 2.3<br>7.0<br>2.0<br>2.5<br>**----- End of picture text -----**<br>


No.2539-6/7 

**2SB1215/2SD1815** 

## **Outline Drawing** 

2SB1215S-E, 2SB1215S-H, 2SB1215T-E2SB1215T-H, 2SD1815S-E, 2SD1815S-H, 2SD1815T-E, 2SD1815T-H 

**==> picture [254 x 370] intentionally omitted <==**

**----- Start of picture text -----**<br>
Mass (g) Unit<br>0.315<br>* For reference [mm]<br>**----- End of picture text -----**<br>


ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”  must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

PS No.2539-7/7

Updated at March 22, 2026

onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.

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