2SD1628F-TD-E.

## **Ordering number : EN1781B 2SD1628** ~~—_~~ @ **Bipolar Transistor 20V, 5A, Low VCE(sat), NPN Single PCP** http://onsemi.com 

## **Applications** 

- Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers 

## **Features** 

- Low saturation voltage 

   - High hFE 

- Large current capacity 

- Very small size making it easy to provide highdensity, small-sized hybrid IC’s 

- Halogen free compliance 

## **Specifi cations** 

**Absolute Maximum Ratings** at Ta=25°C 

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Parameter Symbol Conditions Ratings Unit<br>Collector-to-Base Voltage VCBO 60 V<br>Collector-to-Emitter Voltage VCEO 20 V<br>Emitter-to-Base Voltage VEBO 6 V<br>Collector Current IC 5 A<br>asooe Collector Current (Pulse) ICP 8 A<br>Continued on next page.<br>Package Dimensions  Product & Package Information<br>unit : mm (typ)  • Package  : PCP<br>7007B-004  • JEITA, JEDEC  : SC-62, SOT-89, TO-243<br>• Minimum Packing Quantity : 1,000 pcs./reel<br>Top View<br>2SD1628G-TD-E<br>4.5<br>1.6 1.5 2SD1628G-TD-H Packing Type: TD    Marking<br>2SD1628F-TD-E<br>2SD1628F-TD-H<br>TD RANK<br>1 2 3<br>0.4<br>0.4<br>0.5<br>1.5<br>eld 3.0<br>Electrical Connection<br>2<br>= 0.75<br>1<br>1 : Base 3<br>2 : Collector<br>3 : Emitter<br>int 7<br>Bottom View PCP<br>2.5<br>1.0 4.0 DK LOT No.<br>**----- End of picture text -----**<br>


Semiconductor Components Industries, LLC, 2013 **September, 2013** 

82212 TKIM/21599TH (KT)/5277KI/3045MW, TS  No.1781-1/6 

**2SD1628** 

Continued from preceding page. 

|Continued from preceding page.|||||
|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|Unit|
|Collector Dissipation|PC||500|mW|
|||When mounted on ceramic substrate (250mm<br>2×0.8mm)|1.5|W|
|Junction Temperature|Tj||150|°C|
|Storage Temperature|Tstg||--55 to +150|°C|



Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

## **Electrical Characteristics** at Ta=25°C 

|**Electrical Characteristics **at Ta|=25°C||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|||Unit|
||||min|typ|max||
|Collector Cutoff Current|ICBO|VCB=50V, IE=0A|||100|nA|
|Emitter Cutoff Current|IEBO|VEB=5V, IC=0A|||100|nA|
|DC Current Gain|hFE1|VCE=2V, IC=0.5A|120*||560*||
||hFE2|VCE=2V, IC=3A|95||||
|Gain-Bandwidth Product|fT|VCE=10V, IC=50mA||120||MHz|
|Output Capacitance|Cob|VCB=10V, f=1MHz||45||pF|
|Collector-to-Emitter Saturation Voltage|VCE(sat)|IC=3A, IB=60mA|||500|mV|
|Base-to-Emitter Saturation Voltage|VBE(sat)|IC=3A, IB=60mA|||1.5|V|
|Turn-ON Time|ton|See specif ed Test Circuit.||30||ns|
|Storage Time|tstg|||300||ns|
|Fall Time|tf|||40||ns|



* : The 2SD1628 is classifi ed by 0.5A hFE as follows : 

|Rank|E|F|G|
|---|---|---|---|
|hFE|120 to 200|160 to 320|280 to 560|



## **Switching Time Test Circuit** 

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PW=10 μ s IB1<br>D.C.=2% OUTPUT<br>tr, tf ≤ 7ms IB2<br>INPUT 1 Ω<br>5 Ω<br>200VR<br>50 Ω 1 μ F+ 1 μ F+<br>VBE= --5V VCC=10V<br>**----- End of picture text -----**<br>


IC=10IB1= --10IB2=2A 

## **Ordering Information** 

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Device Package Shipping memo<br>2SD1628G-TD-E PCP 1,000pcs./reel Pb Free<br>2SD1628G-TD-H PCP 1,000pcs./reel Pb Free and Halogen Free<br>2SD1628F-TD-E PCP 1,000pcs./reel Pb Free<br>2SD1628F-TD-H PCP 1,000pcs./reel Pb Free and Halogen Free<br>IC  --  VCE IC  --  VCE<br>5 2.0<br>pulse pulse<br>4 1.6<br>3 1.2<br>2 0.8<br>1 0.4<br>0 IB=0 0 IB=0<br>0 0.2 0.4 0.6 0.8 1.0 0 0.4 0.8 1.2 1.6 2.0<br>Collector-to-Emitter Current, VCE  --  V ITR10003 Collector-to-Emitter Voltage, VCE  --  V ITR10004<br>5mA 2mA<br>6mA<br>4mA<br>10mA<br>8mA<br>15mA<br>20mA<br>30mA<br>40mA<br>60mA<br>80mA 10mA<br>100mA<br>Collector Current, IC  --  A Collector Current, IC  --  A<br>**----- End of picture text -----**<br>


No.1781-2/6 

**2SD1628** 

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5 IC  --  VBE 1000 hFE  --  IC<br>VCE=2V VCE=2V<br>7<br>pulse pulse<br>5<br>4<br>3<br>2<br>3<br>100<br>2 7<br>5<br>3<br>1<br>2<br>0 10<br>0 0.4 0.8 1.2 1.6 2.0 10 2 3 5 100 2 3 5 1000 2 3 5<br>Base-to-Emitter Voltage, VBE  --  V ITR10005 Collector Current, IC  --  mA ITR10006<br>fT  --  IC Cob  --  VCB<br>1000 2<br>VCE=10V f=1MHz<br>7 pulse pulse<br>5<br>100<br>3<br>2 7<br>5<br>100<br>7<br>3<br>5<br>3 2<br>2<br>10 10<br>10 2 3 5 7 100 2 3 5 7 1000 1.0 2 3 5 7 10 2 3 5 7 100<br>Collector Current, IC  --  mA ITR10007  Collector-to-Base Voltage, VCB  --  V ITR10008<br>VCE(sat)  --  IC PC  --  Ta<br>3 1.8<br>IC / IB=50<br>2<br>pulse 1.6<br>1.0 1.4<br>7 1.2<br>5<br>1.0<br>3<br>0.8<br>2<br>0.6<br>0.1<br>0.4<br>7<br>5 0.2<br>3 0<br>0.1 2 3 5 7 1.0 2 3 5 7 10 0 20 40 60 80 100 120 140 160<br>Collector Current, IC  --  A ITR10009 Ambient Temperature, Ta  --  °C ITR10010<br>A S O<br>10<br>7<br>5 ICP<br>IC<br>3<br>2<br>1.0<br>7<br>5<br>3<br>2<br>0.1<br>7<br>5 Single pulse<br>3 Mounted on a ceramic board (250mm [2] ✕0.8mm)<br>2 3 5 7 1.0 2 3 5 7 10 2 3<br> Collector-to-Emitter Voltage, VCE  --  V ITR10011<br>No heat sink<br>100ms<br>DC operation<br>Mounted on a ceramic board (250mm2✕<br>0.8mm)<br>10ms1ms<br>DC Current Gain, hFE<br>Collector Current, IC  --  A<br>Output Capacitance, Cob  --  pF<br>Gain-Bandwidth Product, fT  --  MHz<br>Collector Dissipation, PC  --  W<br>Collector-to-Emitter Saturation Voltage, VCE(sat)  --  V<br>Collector Current, IC  --  A<br>**----- End of picture text -----**<br>


No.1781-3/6 

**2SD1628** 

## **Bag Packing Specifi cation** 

2SD1628G-TD-E, 2SD1628G-TD-H, 2SD1628F-TD-E, 2SD1628F-TD-H 

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No.1781-4/6 

**2SD1628** 

## **Outline Drawing** 

## **Land Pattern Example** 

2SD1628G-TD-E, 2SD1628G-TD-H, 2SD1628F-TD-E, 2SD1628F-TD-H 

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Mass (g) Unit Unit: mm<br>0.058<br>* For reference [mm]<br>2.2<br>45°<br>45°<br>1.0<br>1.0 1.5<br>3.0<br>0.9<br>3.7<br>1.5 1.8<br>**----- End of picture text -----**<br>


No.1781-5/6 

**2SD1628** 

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PS No.1781-6/6