2SD1623T-TD-E
Bipolar (BJT) Single Transistor, NPN, 50 V, 2 A, 500 mW, SOT-89, Surface Mount
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:150MHz; Power Dissipation Pd:500mW; DC Collector Current:2A; DC Current Gain hFE:200hFE; Transist
- MSL: MSL 1 - Unlimited
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 500mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 150MHz
- Transistor Case Style: SOT-89
- DC Current Gain hFE Min: 200hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 2A
- Collector Emitter Voltage Max: 50V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.201 € |
| Current stock | 1000+ |
| Lead time | 7 days |
## **Ordering number : EN1727F 2SB1123/2SD1623** ~~—___~~ @ **Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single PCP** http://onsemi.com ## **Applicaitons** - Voltage regulators, relay drivers, lamp drivers, electrical equipment ## **Features** - Adoption of FBET, MBIT processes - Large current capacity and wide ASO - Low collector-to-emitter saturation voltage - Fast switching speed - The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further - miniaturization ## **Specifi cations**[( ) : 2SB1123] **Absolute Maximum Ratings** at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)60 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--)2 A ~~—=———~~ Collector Current (Pulse) ICP (--)4 A Continued on next page. **Package Dimensions Product & Package Information** unit : mm (typ) • Package : PCP 7007B-004 - Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 - Minimum Packing Quantity : 1,000 pcs./reel **==> picture [226 x 278] intentionally omitted <==** **----- Start of picture text -----**<br> Top View<br>2SB1123S-TD-E<br>4.5<br>2SB1123T-TD-E<br>1.6 1.5<br>2SD1623S-TD-E<br>7 2SD1623T-TD-E<br>1 2 3<br>0.4<br>0.4<br>0.5<br>1.5<br>a 3.0<br>0.75<br>1 : Base<br>2 : Collector<br>3 : Emitter<br>wie Bottom View PCP<br>2.5<br>1.0 4.0<br>**----- End of picture text -----**<br> **Packing Type: TD** **==> picture [162 x 206] intentionally omitted <==** **----- Start of picture text -----**<br> TD<br>Marking<br>RANK RANK<br>2SB1123 2SD1623<br>Electrical Connection<br>2 2<br>1 1<br>3 3<br>4 1 4<br>2SB1123 2SD1623<br>BF LOT No. DF LOT No.<br>**----- End of picture text -----**<br> Semiconductor Components Industries, LLC, 2013 **September, 2013** 82212 TKIM/31010EA TKIM/N1501 TSIM/92098 HA (KT)/4107 KI/N275 KI/3045 MW, TS No.1727-1/8 **2SB1123 / 2SD1623** Continued from preceding page. |Continued from preceding page.||||| |---|---|---|---|---| |Parameter|Symbol|Conditions|Ratings|Unit| |Collector Dissipation|PC||0.5|W| |||When mounted on ceramic substrate (250mm<br>2×0.8mm)|1.3|W| |Junction Temperature|Tj||150|°C| |Storage Temperature|Tstg||--55 to +150|°C| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ## **Electrical Characteristics** at Ta=25°C |Parameter|Symbol|Conditions|Ratings|Ratings|Ratings|Unit| |---|---|---|---|---|---|---| ||||min|typ|max|| |Collector Cutoff Current|ICBO|VCB=(--)50V, IE=0A|||(--)100|nA| |Emitter Cutoff Current|IEBO|VEB=(--)4V, IC=0A|||(--)100|nA| |DC Current Gain|hFE1|VCE=(--)2V, IC=(--)100mA|100*||560*|| ||hFE2|VCE=(--)2V, IC=(--)1.5A|40|||| |Gain-Bandwidth Product|fT|VCE=(--)10V, IC=(--)50mA||150||MHz| |Output Capacitance|Cob|VCB=(--)10V, f=1MHz||(22)12||pF| |Collector-to-Emitter Saturation Voltage|VCE(sat)|IC=(--)1A, IB=(--)50mA||(--0.3)0.15|(--0.7)0.4|V| |Base-to-Emitter Saturation Voltage|VBE(sat)|IC=(--)1A, IB=(--)50mA||(--)0.9|(--)1.2|V| |Collector-to-Base Breakdown Voltage|V(BR)CBO|IC=(--)10μA, IE=0A|(--)60|||V| |Collector-to-Emitter Breakdown Voltage|V(BR)CEO|IC=(--)1mA, RBE=∞|(--)50|||V| |Emitter-to-Base Breakdown Voltage|V(BR)EBO|IE=(--)10μA, IC=0A|(--)6|||V| |Turn-ON Time|ton|See specif ed Test Circuit.||(60)60||ns| |Storage Time|tstg|||(450)550||ns| |Fall Time|tf|||(30)30||ns| * : The 2SB1123 / 2SD1623 are classifi ed by 100mA hFE as follows : |Rank|R|S|T|U| |---|---|---|---|---| |hFE|100 to 200|140 to 280|200 to 400|280 to 560| ## **Switching Time Test Circuit** **==> picture [165 x 96] intentionally omitted <==** **----- Start of picture text -----**<br> PW=20 μ s IB1<br>D.C. ≤ 1%<br>RB OUTPUT<br>INPUT<br>VR IB2 RL=50 Ω<br>50 Ω<br>+ +<br>100 μ F 470 μ F<br>--5V 25V<br>**----- End of picture text -----**<br> IC=10IB1= --10IB2=500mA (For PNP, the polarity is reversed) ## **Ordering Information** |**Ordering Information**|||| |---|---|---|---| |Device|Package|Shipping|memo| |2SB1123S-TD-E|PCP|1,000pcs./reel|Pb Free| |2SB1123T-TD-E|PCP|1,000pcs./reel|| |2SD1623S-TD-E|PCP|1,000pcs./reel|| |2SD1623T-TD-E|PCP|1,000pcs./reel|| No.1727-2/8 **2SB1123 / 2SD1623** **==> picture [471 x 737] intentionally omitted <==** **----- Start of picture text -----**<br> IC -- VCE IC -- VCE<br>--2.4 2.4<br>2SB1123 2SD1623<br>Pulse Pulse<br>--2.0 2.0<br>--1.6 1.6<br>--1.2 1.2<br>--0.8 0.8<br>--0.4 0.4<br>IB=0mA IB=0mA<br>0 0<br>0 --0.4 --0.8 --1.2 --1.6 --2.0 --2.4 0 0.4 0.8 1.2 1.6 2.0 2.4<br>Collector-to-Emitter Voltage, VCE -- V ITR08891 Collector-to-Emitter Voltage, VCE -- V ITR08892<br>IC -- VCE IC -- VCE<br>--1200 1200<br>2SB1123 2SD1623<br>Pulse Pulse<br>--1000 1000<br>--800 800<br>--600 600<br>--400 400<br>--200 200<br>IB=0mA IB=0mA<br>0 0<br>0 --2 --4 --6 --8 --10 --12 0 2 4 6 8 10 12<br>Collector-to-Emitter Voltage, VCE -- V ITR08893 Collector-to-Emitter Voltage, VCE -- V ITR08894<br>IC -- VBE IC -- VBE<br>--1200 1200<br>2SB1123 2SD1623<br>VCE= --2V VCE=2V<br>--1000 1000<br>--800 800<br>--600 600<br>--400 400<br>--200 200<br>0 0<br>0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 0 0.2 0.4 0.6 0.8 1.0 1.2<br>Base-to-Emitter Voltage, VBE -- V ITR08895 Base-to-Emitter Voltage, VBE -- V ITR08896<br>hFE -- IC hFE -- IC<br>1000 1000<br>2SB1123 2SD1623<br>7 VCE= --2V 7 VCE=2V<br>5 5<br>3 3<br>2 2<br>100 100<br>7 7<br>5 5<br>3 3<br>2 2<br>10 10<br>--10 2 3 5 7 --100 2 3 5 7 --1000 2 3 5 10 2 3 5 7 100 2 3 5 7 1000 2 3 5<br>Collector Current, IC -- mA ITR08897 Collector Current, IC -- mA ITR08898<br>--8mA<br>3mA<br>--2mA 2mA<br>2mA<br>1mA<br>--6mA<br>--4mA<br>--3mA<br>--2mA<br>--1mA<br>4mA<br>4mA<br>--4mA<br>--5mA 5mA<br>7mA<br>--6mA 6mA<br>--7mA<br>8mA<br>--10mA 15mA<br>25mA<br>40mA<br>--20mA<br>50mA<br>--50mA<br>Collector Current, IC -- A Collector Current, IC -- A<br>Collector Current, IC -- mA Collector Current, IC -- mA<br>Collector Current, IC -- mA Collector Current, IC -- mA<br>DC Current Gain, hFE DC Current Gain, hFE<br>**----- End of picture text -----**<br> No.1727-3/8 **2SB1123 / 2SD1623** **==> picture [482 x 736] intentionally omitted <==** **----- Start of picture text -----**<br> fT -- IC fT -- IC<br>1000 1000<br>2SB1123 2SD1623<br>7 VCB=10V 7 VCB=10V<br>5 5<br>3 3<br>2 2<br>100 100<br>7 7<br>5 5<br>3 3<br>2 2<br>10 10<br>--10 2 3 5 7 --100 2 3 5 7--1000 2 3 10 2 3 5 7 100 2 3 5 7 1000 2 3<br>Collector Current, IC -- mA ITR08899 Collector Current, IC -- mA ITR08900<br>Cob -- VCB Cob -- VCB<br>2 100<br>2SB1123 2SD1623<br>f=1MHz 7 f=1MHz<br>100<br>5<br>7<br>5<br>3<br>3<br>2<br>2<br>10<br>10<br>7<br>7<br>5 5<br>--1.0 2 3 5 7 --10 2 3 5 7 --100 1.0 2 3 5 7 10 2 3 5 7 100<br>Collector-to-Base Voltage, VCB -- V ITR08901 Collector-to-Base Voltage, VCB -- V ITR08902<br>VCE(sat) -- IC VCE(sat) -- IC<br>--100 100<br>2SB1123 2SD1623<br>5 IC / IB=20 5 IC / IB=20<br>2 2<br>--10 10<br>5 5<br>2 2<br>--1.0 1.0<br>5 5<br>2 2<br>--0.1 0.1<br>5 5<br>2 2<br>--0.01 0.01<br>--10 2 3 5 7 --100 2 3 5 7 --1000 2 3 10 2 3 5 7 100 2 3 5 7 1000 2 3<br>Collector Current, IC -- mA ITR08903 Collector Current, IC -- mA ITR08904<br>A S O PC -- Ta<br>10 0.8<br>2SB1123 / 2SD1623 2SB1123 / 2SD1623<br>5 ICP=4A<br>32 IC=2A 0.6<br>1.0 0.5<br>5 0.4<br>3<br>2<br>0.1 Ta=25°C 0.2<br>5 Single pulse<br>For PNP, minus sign is omitted<br>3<br>2 Mounted on a ceramic board (250mm [2] ✕0.8mm) 0<br>5 7 1.0 2 3 5 7 10 2 3 5 7 100 0 20 40 60 80 100 120 140 160<br>Collector-to-Emitter Voltage, VCE -- V ITR08906 Ambient Temperature, Ta -- °C IT04221<br>No heat sink<br>DC operation<br>100ms 10ms<br>1ms<br>Gain-Bandwidth Product, fT -- MHz Gain-Bandwidth Product, fT -- MHz<br>Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF<br>Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V<br>Collector Current, IC -- A<br>Collector Dissipation, PC -- W<br>**----- End of picture text -----**<br> No.1727-4/8 **2SB1123 / 2SD1623** **==> picture [217 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> PC -- Ta<br>1.6<br>2SB1123 / 2SD1623<br>1.4<br>1.3<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>0 20 40 60 80 100 120 140 160<br>Ambient Temperature, Ta -- °C IT04222<br>Mounted on a ceramic board(250mm2✕<br>0.8mm)<br>Collector Dissipation, PC -- W<br>**----- End of picture text -----**<br> No.1727-5/8 **2SB1123 / 2SD1623** ## **Bag Packing Specifi cation** - 2SB1123S-TD-E, 2SB1123T-TD-E, 2SD1623S-TD-E, 2SD1623T-TD-E **==> picture [168 x 38] intentionally omitted <==** No.1727-6/8 **2SB1123 / 2SD1623** ## **Outline Drawing Land Pattern Example** 2SB1123S-TD-E, 2SB1123T-TD-E, 2SD1623S-TD-E, 2SD1623T-TD-E **==> picture [254 x 370] intentionally omitted <==** **----- Start of picture text -----**<br> Mass (g) Unit<br>0.058<br>* For reference [mm]<br>**----- End of picture text -----**<br> **==> picture [215 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Unit: mm<br>2.2<br>45°<br>45°<br>1.0<br>1.0 1.5<br>3.0<br>0.9<br>3.7<br>1.5 1.8<br>**----- End of picture text -----**<br> No.1727-7/8 **2SB1123 / 2SD1623** ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.1727-8/8
Updated at March 24, 2026
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