2SC5994-TD-E
Bipolar (BJT) Single Transistor, NPN, 50 V, 2 A, 3.5 W, SOT-89, Surface Mount
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:420MHz; Power Dissipation Pd:3.5W; DC Collector Current:2A; DC Current Gain hFE:40hFE; Transist
- MSL: MSL 1 - Unlimited
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 3.5W
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 420MHz
- Transistor Case Style: SOT-89
- DC Current Gain hFE Min: 40hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 2A
- Collector Emitter Voltage Max: 50V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.214 € |
| Current stock | 500+ |
| Lead time | 7 days |
## **2SC5994** ## **Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single** www.onsemi.com ## **Features** - Adoption of MBIT Process - Low Collector to Emitter Saturation Voltage - Large Current Capacity - High Speed Switching ## **Typical Applications** - Voltage Regulators - Relay Drivers - Lamp Drivers - Electrical Equipment ## **ELECTRICAL CONNECTION** **==> picture [91 x 70] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>1 : Base<br>1 2 : Collector<br>3 : Emitter<br>3<br>**----- End of picture text -----**<br> ## **MARKING** ## **SPECIFICATIONS** ## **ABSOLUTE MAXIMUM RATING** at Ta = 25 ° C (Note 1, 2) |Parameter|Parameter|Symbol|Value|Unit| |---|---|---|---|---| |Collector to Base Voltage||VCBO|100|V| |g<br>Collector to Emitter Voltage||VCES<br>~~ee~~<br>~~ee~~|100<br>~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~**ee**~~| |||VCEO<br>~~ee~~|50<br>~~ee~~<br>~~ee~~|V<br>~~**ee**~~| |Emitter to Base Voltage<br>~~es~~||CEO<br>VEBO<br>~~ee ~~<br>~~es~~|6<br>~~ee ~~<br> ~~ee~~<br>~~es~~|V<br> ~~**ee**~~<br>~~es~~<br>~~I~~| |Collector Current<br>~~GG~~||IC<br>~~GG~~|2<br>~~GG~~|A<br>~~GG~~<br>~~I~~| |Collector Current(Pulse)<br>~~GG~~<br>~~Rs~~||ICP<br>~~GG~~<br>~~Rs~~|4<br>~~GG~~<br>~~Rs~~|A<br>~~GG~~<br>~~I ~~<br>~~Rs~~| |Base Current<br>~~Rs~~||IB<br>~~Rs~~|400<br>~~Rs~~|mA<br>~~Rs~~| |Collector Dissipation<br>~~a~~<br>~~|~~|(Note 2)<br>~~|~~|PC|1.3<br>~~ee~~|W<br>~~eee~~| ||Tc=25°C<br>~~|~~||3.5<br>~~ee~~|W<br>~~eee~~| |Junction Temperature<br>~~a~~<br>~~|~~<br>~~es~~<br>~~a~~||Tj<br>~~es~~|150<br>~~ee ~~<br>~~es~~|°C<br> ~~eee~~<br>~~es~~| |Storage Temperature<br>~~a~~||Tstg|−55 to +150|°C| Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 Note 2 : Surface mounted on ceramic substrate(450mm × 0.8mm) **==> picture [149 x 54] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>2<br>3<br>SOT-89 / PCP-1<br>| ou L<br>1 2 3<br>FJ LOT No.<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 5 of this data sheet. **©** Semiconductor Components Industries, LLC, 2016 **April 2016 - Rev. 2** **1** Publication Order Number : **2SC5994/D** **2SC5994** ## **ELECTRICAL CHARACTERISTICS** at Ta = 25 ° C (Note 3) |**ELECTRICAL CHARACTERISTIC**|**S**at Ta=25°C|(Note 3)||||| |---|---|---|---|---|---|---| |Parameter|Symbol|Conditions||Value||Unit| ||||min|typ|max|| |Collector Cutoff Current|ICBO|VCB=50V, IE=0A|||1|μA| |Emitter Cutoff Current|IEBO|VEB=4V, IC=0A|||1|μA| |DC Current Gain|hFE1|VCE=2V, IC=100mA|200||560|| ||hFE2|VCE=2V,IC=1.5A|40|||| |Gain-Bandwidth Product|fT|VCE=10V, IC=300mA||420||MHz| |Output Capacitance|Cob|VCB=10V, f=1MHz||9||pF| |Collector to Emitter Saturation<br>Voltage|VCE(sat)|IC=1A, IB=50mA||135|300|mV| |Base to Emitter Saturation Voltage|VBE(sat)|IC=1A, IB=50mA||0.9|1.2|V| |Collector to Base Breakdown<br>Voltage|V(BR)CBO|IC=10μA, IE=0A|100|||V| |Collector to Emitter Breakdown<br>Voltage|V(BR)CES|IC=100μA, RBE=0Ω|100|||V| ||V(BR)CEO|IC=1mA, RBE=**∞**|50|||V| |Emitter to Base Breakdown Voltage|V(BR)EBO|IE=10μA, IC=0A|6|||V| |Turn-On Time|ton|See specified Test<br>Circuit||30||ns| |Storage Time|tstg|||330||ns| |Fall Time|tf|||40||ns| Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ## **Switching Time Test Circuit** **==> picture [47 x 65] intentionally omitted <==** **==> picture [35 x 45] intentionally omitted <==** **www.onsemi.com** **2** **2SC5994** **==> picture [221 x 728] intentionally omitted <==** **==> picture [223 x 737] intentionally omitted <==** **www.onsemi.com** **3** **2SC5994** **==> picture [214 x 370] intentionally omitted <==** **==> picture [213 x 185] intentionally omitted <==** **www.onsemi.com** **4** **2SC5994** ## **PACKAGE DIMENSIONS** ## unit : mm **SOT-89 / PCP-1** CASE 419AU ISSUE O **==> picture [45 x 37] intentionally omitted <==** **----- Start of picture text -----**<br> 1 : Base<br>2 : Collector<br>3 : Emitter<br>**----- End of picture text -----**<br> **==> picture [85 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> Recommended<br>Soldering Footprint<br>**----- End of picture text -----**<br> **==> picture [124 x 136] intentionally omitted <==** **----- Start of picture text -----**<br> 2.2<br>45°<br>45°<br>1.0<br>1.0 1.5<br>3.0<br>0.9<br>3.7<br>1.5 1.8<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** |**ORDERING INFORMATION**|||| |---|---|---|---| |Device|Marking|Package|Shipping (Qty / Packing)| |2SC5994-TD-E|FJ|SOT-89 / PCP-1<br>(Pb-Free)|1,000 / Tape & Reel| † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiariesin the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **www.onsemi.com** **5**
Updated at March 24, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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