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2SC5662T2LP

Bipolar (BJT) Single Transistor, NPN, 11 V, 10 mA, 150 mW, VMT, Surface Mount

  • Manufacturer: ROHM
  • Product type: Single Bipolar Junction Transistors - BJT
  • Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:11V; Transition Frequency ft:3.2GHz; Power Dissipation Pd:150mW; DC Collector Current:10mA; DC Current Ga; Available until stocks are exhausted
  • MSL: MSL 1 - Unlimited
  • SVHC: No SVHC (23-Jan-2024)
  • No. of Pins: 3Pins
  • Product Range: -
  • Qualification: -
  • Power Dissipation: 150mW
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: NPN
  • Transition Frequency: 3.2GHz
  • Transistor Case Style: VMT
  • DC Current Gain hFE Min: 56hFE
  • Operating Temperature Max: 150°C
  • Continuous Collector Current: 10mA
  • Collector Emitter Voltage Max: 11V
Delivery and price
Units per pack 1000
Price 0.115 €
Current stock 1000+
Lead time 7 days
PDF File icon Datasheet

Updated at March 15, 2026