2SC4725TLP

## High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 

## **2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K** 

##  **Features** 

1) High transition frequency. (Typ. fT = 1.5GHz) 

2) Small rbb’Cc and high gain. (Typ. 6ps) 

3) Small NF. 

##  **Packaging specifications and hFE** 

|Type|2SC5661|2SC4725|2SC4082|2SC3837K|
|---|---|---|---|---|
|Package|VMT3|EMT3|UMT3|SMT3|
|hFE|NP|NP|NP|NP|
|Marking|AC∗|AC∗|1C∗|AC∗|
|Code|T2L|TL|T106|T146|
|Basic ordering unit<br>(pieces)|8000|3000|3000|3000|



##  **Absolute maximum ratings** (Ta=25C) 

|**Absolute maximum ratings**(Ta=25C)|**Absolute maximum ratings**(Ta=25C)|(Ta=25C)C)C)|||
|---|---|---|---|---|
|Parameter||Symbol|Limits|Unit|
|Collector-base voltage||VCBO|30|V|
|Collector-emitter voltage||VCEO|20|V|
|Emitter-base voltage<br>Collector current||VEBO<br>IC|3<br>50|V<br>mA|
|Collector current<br>Collector power<br>dissipation|2SC4082, 2SC3837K<br>2SC5661, 2SC4725|PC|50<br>0.2<br>0.15|W|
|Junction temperature||Tj|150|°C|
|Junction temperature<br>Storage temperature||Tj<br>Tstg|−55 to+150|°C|



##  **Dimensions** (Unit : mm) 

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2SC5661<br>0.22 L l 35 T e 0.13s (1) Base<br>ROHM : VMT3 (2) Emitter<br>(3) Collector<br>2SC4725<br>= r i<br>(1) Emitter<br>ROHM : EMT3 (2) Base<br>EIAJ : SC-75A (3) Collector<br>SOT-416<br>2SC4082<br>(1) Emitter<br>(2) Base<br>ROHM : UMT3 (3) Collector<br>EIAJ : SC-70<br>Each lead has same dimensions<br>2SC3837K 2.9 1.1<br>0.4 0.8<br>(3)<br>(2) (1) (1) Emitter<br>a 0.95 n 0.95 (2) Base<br>ROHM : SMT3 po 1.9 0.15 (3) Collector<br>EIAJ : SC-59<br>Each lead has same dimensions<br>1.6 2.8<br>0.3Min.<br>**----- End of picture text -----**<br>


##  **Electrical characteristics** (Ta=25C) 

|**Electrical characteristics**|**Electrical characteristics**(Ta=25C)C)C)|(Ta=25C)C)C)|||||
|---|---|---|---|---|---|---|
|Parameter|Symbol<br>a|Min.<br><br>ee|Typ.<br>|Max.<br>|Unit<br>|Conditions|
|Collector-base breakdown voltage|BVCBO<br>ee|30<br>ee<br>ee<br>es|−<br>ee|−<br>ee|V<br>ee|IC=10μA|
|Collector-emitter breakdown voltage|BVCEO<br>ee|20<br>ee<br>ee<br>es<br>es|−<br>ee|−<br>ee|V<br>ee|IC=1mA|
|Emitter-base breakdown voltage|BVEBO<br>ee|3<br>es<br>ee<br>es<br>es|−<br>ee<br>es|−<br>ee|V<br>ee|IE=10μA|
|Collector cutoff current|ICBO<br>ee|−<br>es<br>ee<br>es<br>eses|−<br>ee<br>es<br>es|0.5<br>ee|μA<br>ee|VCB=15V|
|Emitter cutoff current|IEBO<br>ee|−<br>es<br>ee<br>eses<br>eses|−<br>es<br>ee<br>es<br>es|0.5<br>ee|μA<br>ee|VEB=2V|
|Collector-emitter saturation voltage|VCE(sat)<br>ee|−<br>eses<br>ee<br>eses<br>es|−<br>es<br>ee<br>es<br>ee|0.5<br>ee|V<br>ee|IC/IB=20mA/4mA|
|DC current transfer ratio|hFE<br>es|82<br>eses<br>es<br>es<br>es ee|−<br>es<br>es<br>ee<br>es ee|180<br>es|−<br>es|VCE/IC=10V/10mA|
|Transition frequency|fT<br>ee|600<br>es<br>ee<br>es ee<br>es|1500<br>ee<br>ee<br>es ee|−<br>ee|MHz<br>ee|VCE=10V , IE= −10mA , f=200MHz|
|Output capacitance|Cob<br>ee|−<br>es ee<br>ee<br>es|0.9<br>es ee<br>ee|1.5<br>ee|pF<br>ee|VCB=10V , IE=0A , f=1MHz|
|Collector-base time constant|rbb'·Cc<br>es|−<br>es<br>es<br>es|6<br>es|13<br>es|ps<br>es|VCB=10V , IC=10mA , f=31.8MHz|
|Noise factor|NF<br>ee|−<br>ee<br>es|4.5<br>ee|−<br>ee|dB<br>ee|VCE=12V , IC=2mA , f=200MHz , Rg=50Ω|



This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 

www.rohm.com 

**2009.12 - Rev.C** 

1/3 

○c 2009 ROHM Co., Ltd. All rights reserved. 

**2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K** 

Data Sheet 

##  **Electrical characteristic curves** 

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**----- Start of picture text -----**<br>
500 Ta = 25 ° C 500 Ta = 25 ° C<br>VCECE = 10V IC/IB = 5<br>200 200<br>100 100<br>50 50<br>20 20<br>10 10<br>0.1 0.2 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 20 50<br>COLLECTOR CURRENT : IC (mA)C (mA)(mA) COLLECTOR CURRENT : IC (mA)<br>Fig.1  DC current gain vs. collector current Fig.2  Collector-emitter saturation voltage<br>          vs. collector current<br>5000 Ta = 25 ° C 50<br>VCE = 10V<br>2000<br>20<br>1000<br>10<br>500<br>5<br>200<br>2 Ta = 25 ° C<br>VCE = 10V<br>100 − 0.1 − 0.2 − 0.5 − 1 − 2 − 5 − 10 − 20 − 50 1 f = 31.8MHz<br>0.1 0.2 0.5 1 2 5 10 20 50<br>EMITTER CURRENT : IE (mA)<br>COLLECTOR CURRENT : IC (mA)<br>Fig.4  Gain bandwidth product vs. emitter current<br>Fig.5  Collector to base time constance<br>          vs. collector current<br>25 Ta = 25 ° C 30 Ta = 25 ° C<br>VCE = 12V ICC = 2mA<br>20 f = 200MHz 25 f = 200MHz<br>20<br>15<br>15<br>10<br>10<br>5<br>5<br>0 0<br>0.5 1 2 5 10 20 50 0 2 4 6 8 10 12<br>COLLECTOR CURRENT : Ic (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V)CE (V)(V)<br>FE (mV)CE(sat)<br>COLLECTOR SATURATION VOLTAGE :V<br>rbb' (ps)<br>c<br>(MHz)<br>T<br>TRANSITION FREQUENCY : f<br>COLLECTOR TO BASE TIME CONSTANT : C<br>2 (dB)21el 2 (dB)21el (dB)21el21el<br>INSERTION GAIN : IS INSERTION GAIN : IS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
500 Ta = 25 ° C<br>VCECE = 10V<br>200<br>100<br>50<br>20<br>10<br>0.1 0.2 0.5 1 2 5 10 20 50<br>COLLECTOR CURRENT : IC (mA)C (mA)(mA)<br>FE<br>DC  CURRENT TRANSFER RATIO :h<br>**----- End of picture text -----**<br>


Fig.4  Gain bandwidth product vs. emitter current 

**==> picture [136 x 150] intentionally omitted <==**

**----- Start of picture text -----**<br>
30 Ta = 25 ° C<br>ICC = 2mA<br>25 f = 200MHz<br>20<br>15<br>10<br>5<br>0<br>0 2 4 6 8 10 12<br>COLLECTOR TO EMITTER VOLTAGE : VCE (V)CE (V)(V)<br>Fig.8  Insertion gain vs. collector voltage<br>2 (dB)21el (dB)21el21el<br>INSERTION GAIN : IS<br>**----- End of picture text -----**<br>


Fig.7  Insertion gain vs. collector current 

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**----- Start of picture text -----**<br>
5.0 Ta = 25 ° C<br>f = 1MHz<br>IE = 0A<br>2.0<br>Cob<br>1.0<br>0.5 Cre<br>0.2<br>0.1<br>0.1 0.2 0.5 1 2 5 10 20 50<br>COLLECTOR TO BASE VOLTAGE : VCB (V)<br>(pF)<br>(pF) re<br>oB<br>OUTPUT CAPACITANCE :C FEEDBACK CAPACITANCE :C<br>**----- End of picture text -----**<br>


Fig.3  Capacitance vs. reverse bias voltage 

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**----- Start of picture text -----**<br>
Ta = 25 ° C<br>25 V CE = 10V<br>IC = 10mA<br>20<br>15<br>10<br>5<br>0<br>0.1 0.2 0.5 1 2 5 10<br>FREQUENCY : f (GHz)<br>Fig.6  Insertion gain vs. frequency<br>Ta = 25 ° C<br>VCE = 12V<br>f = 200MHz<br>20<br>10<br>0<br>0.1 0.2 0.5 1 2 5 10 20 50<br>COLLECTOR CURRENT : IC (mA)<br>2 (dB)21el<br>INSERTION GAIN : IS<br>NOISE FIGURE : NF(dB)<br>**----- End of picture text -----**<br>


Fig.9  Noise factor vs. collector current 

www.rohm.com 

**2009.12 - Rev.C** 

2/3 

○c 2009 ROHM Co., Ltd. All rights reserved. 

**2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K** 

Data Sheet 

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**----- Start of picture text -----**<br>
30 Ta = 25 ° C<br>IC = 2mA<br>25 f = 200MHz<br>20<br>15<br>10<br>5<br>0<br>0 2 4 6 8 10 12<br>COLLECTOR TO EMITTER VOLTAGE : VCE (V)<br>NOISE FIGURE : NF(dB)<br>**----- End of picture text -----**<br>


Fig.10  Noise factor vs. collector voltage 

www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 

**2009.12 - Rev.C** 

3/3 

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