2SC3906KFRAT146R
Bipolar (BJT) Single Transistor, NPN, 120 V, 50 mA, 200 mW, SOT-346, Surface Mount
- Manufacturer: ROHM
- Product type:
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:120V; Transition Frequency ft:140MHz; Power Dissipation Pd:200mW; DC Collector Current:50mA; DC Current Gain hFE:180hFE;
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 200mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 140MHz
- Transistor Case Style: SOT-346
- DC Current Gain hFE Min: 180hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 50mA
- Collector Emitter Voltage Max: 120V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.178 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet **AEC-Q101 Qualified** ## 2SC4102FRA / 2SC3906KFRA2SC4102 / 2SC3906K **NPN 50mA 120V High Voltage Amplifier transistors** ## l O **Outline** |Parameter|Value| |---|---| |VCEO|120V| |IC|50mA| ## l O **Features** **==> picture [214 x 91] intentionally omitted <==** **----- Start of picture text -----**<br> UMT3 SMT3<br>Collector Collector<br>Base Base<br>Emitter Emitter<br>2SC4102FRA2SC4102 2SC3906KFRA2SC3906K<br>SOT-323 (SC-70) SOT-346 (SC-59)<br>**----- End of picture text -----**<br> - 1) High Breakdown Voltage (VCEO=120V). - 2) Complementary PNP Types : - 2SA1579 (UMT3) / 2SA152SA1579FRA (UMT3) / 2SA **1** 514KFRA (SMT3)4K (SMT3) 3) Complex transistors : IMX8 (SMT6)IMX8FRA (SMT6) 4) Lead Free/RoHS Compliant. ## l O **Inner circuit** **==> picture [76 x 80] intentionally omitted <==** **----- Start of picture text -----**<br> Collector<br>Base<br>|<br>Emitter<br>**----- End of picture text -----**<br> ## l **Applications** High Voltage Amplifier . ## l O **Packaging specifications** |Part No.|Package|Package<br>size<br>(mm)|Taping<br>code|Reel size<br>(mm)|Tape width<br>(mm)|Basic<br>ordering<br>unit (pcs)|Marking| |---|---|---|---|---|---|---|---| |**2SC**4102<br>4102FRA|UMT3|2021|T106|180|8|3,000|Tx*1| |**2SC**3906K<br>3906KFRA|SMT3|2928|T146|180|8|3,000|Tx*1| *1 x : hFE rank www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. **2013.05 - Rev.B** 1/7 Data Sheet **2SC4102FRA / 2SC3906KFRA** ## l **Absolute maximum ratings** (Ta = 25°C) |l<br>**Absolute maximum ratings**(Ta = 25°C)|l<br>**Absolute maximum ratings**(Ta = 25°C)|||| |---|---|---|---|---| |Parameter||Symbol|Values|Unit| |Collector-base voltage||VCBO|120|V| |Collector-emitter voltage||VCEO|120|V| |Emitter-base voltage||VEBO|5|V| |Collector current||IC|50|mA| |||ICP<br>*1|100|mA| |Power dissipation|**2SC4102**<br>**2SC3906K**<br>FRA<br>FRA|PD<br>*2|200|mW| |Junction temperature||Tj|150|°C| |Range of storage temperature||Tstg|-55 to+150|°C| ## l **Electrical characteristics** (Ta = 25°C) |l<br>**Electrical characteristics**(Ta|= 25°C)|||||| |---|---|---|---|---|---|---| |Parameter|Symbol|Conditions|Min.|Typ.|Max.|Unit| |Collector-emitter<br>breakdown voltage|BVCEO|IC= 1mA|120|-|-|V| |Collector-base<br>breakdown voltage|BVCBO|IC= 50mA|120|-|-|V| |Emitter-base<br>breakdown voltage|BVEBO|IE= 50mA|5|-|-|V| |Collector cut-off current|ICBO|VCB= 100V|-|-|0.5|mA| |Emitter cut-off current|IEBO|VEB= 4V|-|-|0.5|mA| |Collector-emitter<br>saturation voltage|VCE(sat)|IC= 10mA, IB= 1mA|-|-|0.5|V| |DC current gain|hFE|VCE= 6V, IC= 2mA|180|-|560|-| |Transition frequency|fT|VCE= 12V, IE=-2mA<br>f=100MHZ|-|140|-|MHz| |Output capacitance|Cob|VCB= 12V, IE= 0mA,<br>f = 1MHz|-|2.5|-|pF| - *1 PW=100ms Single Pulse - *2 Each terminal mounted on a reference footprint ## l **hFE rank categories** |Rank|R|S| |---|---|---| |hFE|180 to 390|270 to 560| www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. **2013.05 - Rev.B** 2/7 Data Sheet **2SC4102FRA / 2SC3906KFRA** ## l **Electrical characteristic curves** (Ta = 25°C) ## Fig.1 Ground Emitter Propagation Characteristics **==> picture [221 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>oaeeeeSSSe0PP 0fo seeeeseeeesel VCE= 6V<br>EY Ta=-40ºC<br>25ºC<br>1 1 100ºC anna<br>EERE! | A<br>Senet 2) Geeeeeeee<br>Seen a) 4eeeeeeeeeee<br>PCE eo ieee<br>PT AP<br>PA<br>ORE A ee<br>LEER EEE<br>0.1<br>0 0.5 1 1.5 2<br>[mA]<br>C<br>COLLECTOR CURRENT : I<br>**----- End of picture text -----**<br> BASE TO EMITTER VOLTAGE : VBE [V] Fig.3 DC Current Gain vs. Collector Current(I) **==> picture [227 x 228] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>SSSescentPt VCE= 6V tT<br>ee<br>peer tee anette<br>Cot ZT HII<br>Ta=100ºC<br>ANNI<br>100<br>25ºC<br>-40ºC | A eeLMes a LEN<br>PT PTT<br>PT LE EE<br>10<br>0.1 1 10 100<br>COLLECTOR CURRENT : IC [mA]<br>FE<br>DC CURRENT GAIN : h<br>**----- End of picture text -----**<br> Fig.2 Typical Output Characteristics **==> picture [11 x 180] intentionally omitted <==** **----- Start of picture text -----**<br> [mA]<br>C<br> COLLECTOR CURRENT : I<br>**----- End of picture text -----**<br> COLECTOR TO EMITTE VOLTAGE : VCE [V] Fig.4 DC Current Gain vs. Collector Current(II) **==> picture [225 x 228] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>ai(ieePT Ta=25ºC TT Seri e els<br>PT<br>SR<br>TT OTA TI<br>100 TANT VCE= 5V<br>3V<br>[pta ee WXA | INTTT|<br>PT TT 1V a NB<br>PT fT<br>P tT TTTUT E TET<br>10<br>0.1 1 10 100<br>COLLECTOR CURRENT : IC [mA]<br>FE<br>DC CURRENT GAIN : h<br>**----- End of picture text -----**<br> www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. **2013.05 - Rev.B** 3/7 Data Sheet **2SC4102FRA / 2SC3906KFRA** ## l **Electrical characteristic curves** (Ta = 25°C) Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (I) **==> picture [237 x 543] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>Aeee| IC / IE = 10/1 eee ee ee<br>PTT a ee<br>PT LTT T T EEE PET<br>ee |<br>Ta=100ºC<br>25ºC<br>iaaaa -40ºC<br>0.1<br>RO a OFA<br>Ra S22 Sl<br>onsen<br>|<br>ee |<br>0.01<br>0.1 1 10 100<br>COLLECTOR CURRENT : IC [mA]<br>Fig.7 Base-Emitter Saturation Voltage<br> vs. Collector Current<br>10<br>et tt<br>a IC / IB = 10/1<br>ec ee<br>Joo<br>FA HH<br>Ta= -40ºC<br>SILT<br>25ºC<br>100ºC<br>aN<br>1<br>Breet |<br>SSSee<br>CC CCae<br>PTI PTI<br>0.1<br>1 10 100<br>COLLECTOR CURRENT : IC [mA]<br> [V]<br>CE(sat)<br>COLLECTOR-EMITTER SATURATION VOLTAGE : V<br> [V]<br>BE(sat)<br>BASE-EMITTER SATURATION VOLTAGE : V<br>**----- End of picture text -----**<br> Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current (II) **==> picture [238 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>a Ta=25ºC eeee<br>seeee<br>| a<br>ptPT t T ETTTTEP ET<br>IC / IB =50/1<br>Po NOE PT<br>20/1<br>10/1<br>oe<br>0.1<br>Ne<br>a.........Oe<br>_e<br>== el<br>Ptee TE EE<br>0.01<br>0.1 1 10 100<br> [V]<br>CE(sat)<br>COLLECTOR-EMITTER SATURATION VOLTAGE : V<br>**----- End of picture text -----**<br> COLLECTOR CURRENT : IC [mA] Fig.8 Gain Bandwidth Product vs. Emitter Current **==> picture [11 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> [MHz]<br>T<br>TRANSITION FREQUENCY : f<br>**----- End of picture text -----**<br> EMITTER CURRENT :IE [mA] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. **2013.05 - Rev.B** 4/7 Data Sheet **2SC4102FRA / 2SC3906KFRA** ## l **Electrical characteristic curves** (Ta = 25°C) **==> picture [236 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.9 Emitter input capacitance vs.<br> Emitter-Base Voltage<br> Collector output capacitance vs.<br> Collector-Base Voltage<br>100<br>Ta=25ºC<br>f=1MHz<br>IC=0A<br>IE=0A<br>Cib<br>10<br>Cob<br>1<br>0.1 1 10 100<br>COLLECTOR - BASE VOLTAGE : VCB [V]<br>COLLECTOR OUTPUT CAPACITANCE : Cob [pF] EMITTER INPUT CAPACITANCE : Cib [pF] EMITTER - BASE VOLTAGE : VEB [V]<br>**----- End of picture text -----**<br> ## Fig.10 Safe Operating Area **==> picture [228 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>2SC4102<br>1ms<br>100<br>10ms<br>10<br>100ms<br>DC<br>(Mounted on a<br>1 reference land)<br>Ta=25ºC<br>Single non repetitive pulse<br>0.1<br>0.1 1 10 100 1000<br> [mA]<br>C<br>COLLECTOR CURRENT : I<br>**----- End of picture text -----**<br> COLLECTOR TO EMITTER VOLTAGE : VCE[V] ## Fig.11 Safe Operating Area **==> picture [228 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>2SC3906K<br>1ms<br>10ms<br>100<br>10<br>100ms<br>DC<br>(Mounted on a<br>1 reference land)<br>Ta=25ºC<br>Single non repetitive pulse<br>0.1<br>0.1 1 10 100 1000<br> [mA]<br>C<br>COLLECTOR CURRENT : I<br>**----- End of picture text -----**<br> COLLECTOR TO EMITTER VOLTAGE : VCE [V] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. **2013.05 - Rev.B** 5/7 Data Sheet **2SC4102FRA / 2SC3906KFRA** ## l **Dimensions** (Unit : mm) **==> picture [392 x 347] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>A<br>UMT3 c<br>Q<br>e b A3<br>x S A<br>e<br>S<br>b2<br>E<br>E H Lp<br>L1<br>A<br>e1<br>l1<br>A1<br>**----- End of picture text -----**<br> Pattern of terminal position areas [Not a recommended pattern of soldering pads] ||Pattern of terminal position areas<br>|Pattern of terminal position areas<br>|Pattern of terminal position areas<br>|Pattern of terminal position areas<br>|Pattern of terminal position areas<br>| |---|---|---|---|---|---| ||[Not a recommended pattern of soldering||||| ||DIM|MIN<br>MAX<br>MILIMETERS||INCHES|| ||||MAX|MIN|MAX| ||A|0.80|1.00|0.031|0.039| ||A1|0.00|0.10|0.000|0.004| ||A3|0.25||0.010|| ||b|0.15|0.30|0.006|0.012| ||c|0.10|0.20|0.004|0.008| ||D|1.90|2.10|0.075|0.083| ||E|1.15|1.35|0.045|0.053| ||e|0.65||0.026|| ||HE|2.00|2.20|0.079|0.087| ||L1|0.20|0.50|0.008|0.020| ||Lp|0.25|0.55|0.010|0.022| ||Q|0.10|0.30|0.004|0.012| ||x|-|0.10|-|0.004| ||||||| ||DIM|MIN<br>MAX<br>MILIMETERS||INCHES|| ||||MAX|MIN|MAX| ||b2|-|0.50|-|0.020| ||e1|1.55||0.061|| ||l1|-|0.65|-|0.026| Dimension in mm / inches www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. **2013.05 - Rev.B** 6/7 Data Sheet **2SC4102FRA / 2SC3906KFRA** ## l **Dimensions** (Unit : mm) **==> picture [417 x 353] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>A<br>SMT3<br>c<br>Q<br>A3<br>e b<br>x S A<br>e<br>S<br>b2<br>Pattern of terminal position areas<br>[Not a recommended pattern of soldering pads]<br>E<br>E H<br>L1 Lp<br>e1<br>A<br>l1<br>A1<br>**----- End of picture text -----**<br> ||||||| |---|---|---|---|---|---| ||DIM|MILIMETERS||INCHES|| |||MIN|MAX|MIN|MAX| ||A|1.00|1.30|0.039|0.051| ||A1|0.00|0.10|0.000|0.004| ||A3|0.25||0.010|| ||b|0.35|0.50|0.014|0.020| ||c|0.09|0.25|0.004|0.010| ||D|2.80|3.00|0.110|0.118| ||E|1.50|1.80|0.059|0.071| ||e|0.95||0.037|| ||HE|2.60|3.00|0.102|0.118| ||L1|0.30|0.60|0.012|0.024| ||Lp|0.40|0.70|0.016|0.028| ||Q|0.20|0.30|0.008|0.012| ||x|-|0.10|-|0.004| ||y|-|0.10|-|0.004| ||||||| ||DIM|MILIMETERS||INCHES|| |||MIN|MAX|MIN|MAX| ||b2|-|0.60|-|0.024| ||e1|2.10||0.083|| ||l1|-|0.90|-|0.035| Dimension in mm / inches www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. **2013.05 - Rev.B** 7/7 Notice - **N o t e s** - 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : - 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. - 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. - 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. - 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. - 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. - 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. - 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. - 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. - 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. - 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. - 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. **==> picture [80 x 61] intentionally omitted <==** Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ## ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. R1102A
Updated at April 25, 2026
Founded with a steadfast commitment to a "Quality First" corporate policy, ROHM is a globally recognized leader in the design and manufacture of semiconductors and electronic components. Originally named for its foundational product, resistors, combined with the unit of resistance, the "R" in ROHM has evolved to represent the brand's enduring dedication to reliability. Today, the company is renowned for driving technological advancement and supplying high-performance, dependable solutions to engineers worldwide. The company's engineering excellence is most prominently showcased in its expansive portfolio of discrete semiconductors. ROHM provides an industry-leading selection of bipolar transistors, alongside a massive array of Zener single diodes, Schottky diodes, and small signal diodes. Engineered for rigorous efficiency and compact footprint requirements, these foundational components are critical for modern power management, precise signal processing, and high-speed switching applications. In addition to its core discrete offerings, ROHM delivers advanced power control and circuit protection solutions. This includes a highly trusted lineup of single and dual MOSFETs, single IGBTs, and transient voltage suppressors (TVS diodes) designed to safeguard sensitive circuitry. Complemented by intelligent power modules, precision sensors, and specialized ICs, ROHM equips designers with the premium components necessary to build the next generation of robust electronic infrastructure.
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