2SB1386T100R

2SB1386 / 2SB1412 

Transistors 

## − − Low frequency transistor ( 20V, 5A) 

## **2SB1386 / 2SB1412** 

- **Features** 

- 1) Low VCE(sat). 

VCE(sat) =  −0.35V (Typ.) 

- (IC/IB = −4A / −0.1A) 

2) Excellent DC current gain characteristics. 

3) Complements the 2SD2098 / 2SD2118. 

� **Structure** Epitaxial planar type PNP silicon transistor 

## � **Dimensions** (Unit : mm) 

**==> picture [284 x 158] intentionally omitted <==**

**----- Start of picture text -----**<br>
2SB1386 2SB1412<br>(1) Base (1) Base<br>ROHM : MPT3 (2) Collector ROHM : CPT3 (2) Collector<br>EIAJ : SC-62 (3) Emitter EIAJ : SC-63 (3) Emitter<br>Abbreviated symbol: BH ∗<br>**----- End of picture text -----**<br>


∗[ Denotes h][FE] 

## � **Absolute maximum ratings** (Ta=25°C) 

|Parameter|Parameter|Symbol|Limits|
|---|---|---|---|
|Collector-base voltage||VCBO|−30|
|Collector-emitter voltage||VCEO|−20|
|Emitter-base voltage||VEBO|−6|
|Collector current||IC|−5|
||||−10|
|Collector power<br>dissipation|2SB1386|PC|0.5|
||||2|
||2SB1412||1|
||||10|
|Junction temperature||Tj|150|
|Storage temperature||Tstg|−55 to 150|



∗[1  Single pulse, Pw][=][10ms] 

- ∗[2  When mounted on a 40][×][40][×][0.7 mm ceramic board.] 

Rev.B 

1/4 

2SB1386 / 2SB1412 

Transistors 

## � **Electrical characteristics** (Ta=25°C) 

|�**Electrical characteristics**(Ta=25°|C)||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|Collector-base breakdown voltage|BVCBO|−30|−|−|V|IC= −50µA|
|Collector-emitter breakdown voltage|BVCEO|−20|−|−|V|IC= −1mA|
|Emitter-base breakdown voltage|BVEBO|−6|−|−|V|IE= −50µA|
|Collector cutoff current|ICBO|−|−|−0.5|µA|VCB= −20V|
|Emitter cutoff current|IEBO|−|−|−0.5|µA|VEB= −5V|
|Collector-emitter saturation voltage|VCE(sat)|−|0.35|−1.0|V|∗<br>IC/IB= −4A/−0.1A|
|DC current transfer ratio|hFE|82|−|390|−|∗<br>VCE= −2V, IC= −0.5A|
|Transition frequency|fT|−|120|−|MHz|VCE= −6V, IE=50mA, f=100MHz|
|Output capacitance|Cob|−|60|−|pF|VCB= −20V, IE=0A, f=1MHz|



∗[Measured using pulse current.] 

## � **Packaging specifications and hFE** 

|Type|hFE|Package|Taping|Taping|
|---|---|---|---|---|
|||Code|T100|TL|
|||Basic ordering<br>unit (pieces)|1000|2500|
|2SB1386|PQR|||−|
|2SB1412|PQR||−||



## hFE values are classified as follows : 

|Item|P|Q|R|
|---|---|---|---|
|hFE|82 to 180|120 to 270|180 to 390|



Rev.B 

2/4 

2SB1386 / 2SB1412 

Transistors 

## � **Electrical characteristic curves** 

**==> picture [433 x 163] intentionally omitted <==**

**----- Start of picture text -----**<br>
− 10 − 5 VCE = − 2V − 5 −− 50mA45mA Ta = 25 ° C 5k Ta=25 ° C<br>−− 21 Ta = 100  25 °° CC − 4 −− 40mA35mA 2k1k<br>− 500m − 25 ° C − 15mA<br>500<br>− 200m − 3<br>− 100m − 10mA 200<br>− 50m − 2 100 − 2V<br>− 20m − 5mA 50 − 1V<br>− 10m<br>− 5m − 1 20<br>−− 2m1m0 − 0.2 − 0.4 − 0.6 − 0.8 − 1.0 − 1.2 − 1.4 00 − 0.4 − 0.8 − 1.2 − 1.6IB = 0A − 2.0 10 − 51m − 2m − 5m  − 0.01 − 0.02 − 0.05 − 0.1 − 0.2 − 0.5 − 1 − 2 − 5 − 10<br>BASE  TO  EMITTER  VOLTAGE : VBE (V) COLLECTOR  TO  EMITTER  VOLTAGE : VCE (V) COLLECTOR  CURRENT : IC (A)<br>Fig.1    Grounded emitter propagation Fig.2    Grounded emitter output  Fig.3    DC current gain vs.<br>characteristics characteristics collector current (   )<br>VCE=  − 5V<br>− 30mA − 25mA − 20mA<br>(A)<br>(A) C<br>C  FE<br>COLLECTOR  CURRENT : I DC  CURRENT  GAIN : h<br>COLLECTOR  CURRENT : I<br>**----- End of picture text -----**<br>


**==> picture [434 x 353] intentionally omitted <==**

**----- Start of picture text -----**<br>
5k VCE = − 1V 5k VCE = − 2V − 5 Ta = 25 ° C<br>2k 2k − 2<br>1k 1k − 1<br>500 500<br>− 0.5<br>200 200<br>10050 Ta = 100 −   2525 °°° CCC 10050 Ta = 100 −   2525 °°° CCC −− 0.20.1 IC/IB = 40/130/110/150/1/1<br>− 0.05<br>20 20<br>10 10 − 0.02<br>5 5 − 0.01<br>− 1m − 2m − 5m  − 0.01 − 0.02 − 0.05 − 0.1 − 0.2 − 0.5 − 1 − 2 − 5 − 10 − 1m − 2m − 5m  − 0.01 − 0.02 − 0.05 − 0.1 − 0.2 − 0.5 − 1 − 2 − 5 − 10 − 2m − 5m − 0.0 − -0.02 − 0.05 − 0.1 − 0.2 − 0.5 − 1 − 2 − 5 − 10<br>COLLECTOR  CURRENT : IC (A) COLLECTOR  CURRENT : IC (A) COLLECTOR  CURRENT : IC (A)<br>Fig.4    DC current gain vs.  Fig.5    DC current gain vs.  Fig.6    Collector-emitter saturation<br>collector current (    ) collector current (     ) voltage vs. collector current (   )<br>− 5 lC/lB = 10 − 5 lC/lB = 30 − 5 lC/lB = 40<br>− 2 − 2 − 2<br>− 1 − 1 Ta = 100 ° C − 1 25 ° C<br>− 0.5 − 0.5 25 ° C − 0.5<br>− 0.2 − 0.2 − 0.2<br>− 0.1 Ta = 100 ° C − 0.1 − 0.1 Ta = 100 ° C<br>− 0.05  25 ° C − 0.05 − 0.05<br>− 25 ° C<br>− 0.02 − 0.02 − 0.02<br>− 0.01 − 0.01 − 0.01<br>− 2m − 5m − 0.01 − 0.02 − 0.05 − 0.1  − 0.2 − 0.5 − 1 − 2 − 5 − 10 − 2m − 5m − 0.01 − 0.02 − 0.05 − 0.1  − 0.2 − 0.5 − 1 − 2 − 5 − 10 − 2m − 5m − 0.01 − 0.02 − 0.05 − 0.1  − 0.2 − 0.5 − 1 − 2 − 5 − 10<br>COLLECTOR  CURRENT : IC (A) COLLECTOR  CURRENT : IC (A) COLLECTOR  CURRENT : IC (A)<br>Fig.7    Collector-emitter saturation Fig.8    Collector-emitter saturation Fig.9  Collector-emitter saturation<br>voltage vs. collector current (   ) voltage vs. collector current (    ) voltage vs. collector current (     )<br>− 25 ° C<br>− 25 ° C<br>(V)<br>CE(sat)<br>FE FE<br>DC  CURRENT  GAIN : h DC  CURRENT  GAIN : h<br>COLLECTOR  SATURATION  VOLTAGE : V<br>(V) (V) (V)<br>CE(sat)  CE(sat)  CE(sat)<br>COLLECTOR  SATURATION  VOLTAGE : V COLLECTOR  SATURATION  VOLTAGE : V COLLECTOR  SATURATION  VOLTAGE : V<br>**----- End of picture text -----**<br>


Rev.B 3/4 

2SB1386 / 2SB1412 

## Transistors 

**==> picture [433 x 360] intentionally omitted <==**

**----- Start of picture text -----**<br>
− 5 lC/lB = 50 1 000 Ta = 25 ° C 1000 Ta = 25 ° C<br>− 2 − 2525 °° CC 500 VCE = − 6V 500 IfE == 1MHz0A<br>− 1 Ta = 100 ° C 200<br>− 0.5 100 200<br>50<br>− 0.2 100<br>20<br>− 0.1 10 50<br>− 0.05 5<br>20<br>− 0.02 2<br>− 0.01 1 10<br>− 2m − 5m − 0.01 − 0.02 − 0.05 − 0.1  − 0.2 − 0.5 − 1 − 2 − 5 − 10 1 2 5 10 20 50 100 200 500 1000 − 0.1  − 0.2 − 0.5 − 1 − 2 − 5 − 10 − 20 − 50<br>COLLECTOR  CURRENT : IC (A) EMITTER  CURRENT : IE (mA) COLLECTOR  TO  BASE  VOLTAGE : VCB (V)<br>Fig.10  Collector-emitter saturation  Fig.11  Gain bandwidth product Fig.12  Collector output capacitance<br>voltage vs. collector current (   ) vs. emitter current  vs. collector-base voltage<br>1000 Ta = 25 ° C 100 Ta = 25 ° C<br>f = 1MHz 50 ∗ [Single]<br>500 IC = 0A 20     nonrepetitive    pulse<br>10<br>200 5<br>2<br>100 1<br>500m<br>50<br>200m<br>100m<br>20 50m<br>20m<br>10 10m<br>− 0.1 − 0.2 − 0.5 − 1 − 2 − 5 − 10 0.2 0.5 1 2 5 10 20 50 100 200 500<br>EMITTER  TO  BASE  VOLTAGE : VEB (V) COLLECTOR  TO  EMITTER  VOLTAGE :  − VCE (V)<br>Fig.13  Emitter input capacitance<br>Fig.14   Safe operation area<br> vs. emitter-base voltage F(2SB1412)<br>DC<br>Pw = 100ms<br>Pw = 10ms<br>(V) (pF)<br>CE(sat)  (MHz)<br>T<br>TRANSEITION  FREQUENCY : f<br>COLLECTOR  SATURATION  VOLTAGE : V COLLECTOR  OUTPUT  CAPACITANCE : Cob<br>(pF)<br>(A)<br>C<br>  INTPUT  CAPACITANCE : Cib<br>COLLECTOR  CURRENT : I<br>EMITTER<br>**----- End of picture text -----**<br>


Rev.B 

4/4 

Appendix 

Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. 

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). 

Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. 

It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. 

Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. 

## **ROHM** Customer Support System 

## www.rohm.com 

**THE AMERICAS** / **EUPOPE** / **ASIA** / **JAPAN** 

**Contact us** : webmaster@ rohm.co.jp 

Copyright © 2007 ROHM CO.,LTD. 

21,  Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan 

TEL : +81-75-311-2121 FAX : +81-75-315-0172 

Appendix1-Rev2.0