2SB1202T-TL-E

Bipolar (BJT) Single Transistor, PNP, 50 V, 3 A, 15 W, TO-252 (DPAK), Surface Mount

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Power Dissipation: 15W
DC Current Gain hFE Min: 200hFE
Continuous Collector Current: 3A
Collector Emitter Voltage Max: 50V

Delivery and price
Units per pack	100
Price	0.356 €
Current stock	100+
Lead time	7 days

Datasheet

**Ordering number : EN2113E** 

## **2SB1202/2SD1802** 

## **Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA** 

http://onsemi.com 

## **Applicaitons** 

- Voltage regulators, relay drivers, lamp drivers, electrical equipment 

## **Features** 

- Adoption of FBET and MBIT processes 

- Low collector to emitter saturation voltage 

   - [•] Large current capacitance and wide ASO 

      - Fast switching speed 

- Small and slim package making it easy to make 2SB1202/2SD1802-used sets smaller 

## **Specifi cations** (   ): 2SB1202 

## **Absolute Maximum Ratings** at Ta=25°C 

**==> picture [471 x 326] intentionally omitted <==**

**----- Start of picture text -----**<br>
Parameter Symbol Conditions Ratings Unit<br>Collector to Base Voltage VCBO (--)60 V<br>Collector to Emitter Voltage VCEO (--)50 V<br>Emitter to Base Voltage VEBO (--)6 V<br>Collector Current IC (--)3 A<br>Collector Current (Pulse) ICP (--)6 A<br>Continued on next page.<br>Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating<br>Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.<br>Cn<br>Package Dimensions  unit : mm (typ) Package Dimensions  unit : mm (typ)<br>7518-003  7003-003<br>6.5 2.3<br>6.5 2.3<br>5.0 0.5 2SB1202S-E 2SB1202S-TL-E<br>5.0 0.5<br>4 2SB1202T-E 2SB1202T-TL-E<br>4<br>tT 2SD1802S-E 2SD1802S-TL-E<br>2SD1802T-E 2SD1802T-TL-E<br>0.85 0.85 0.5<br>0.7<br>1.2<br>1 2 3<br>0.6 0.5 0.6 0 to 0.2<br>1 : Base 1.2 1 : Base<br>2 : Collector 2 : Collector<br>1 2 3<br>i l 3 : Emitter roy 3 : Emitter<br>4 : Collector 4 : Collector<br>2.3 2.3<br>may 2.3 2.3 TP i TP-FA<br>1.5<br>1.5<br>5.5 7.0 7.0<br>5.5<br>1.2<br>.8 2.5<br>0.8 .61 7.5 0<br>**----- End of picture text -----**<br>


Continued on next page. 

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ~~Cn~~ 

**Product & Package Information** 

- Package : TP 

   - Package : TP-FA 

- JEITA, JEDEC : SC-64, TO-251, SOT-553, DPAK 

   - JEITA, JEDEC : SC-63, TO-252, SOT-428, DPAK 

- Minimum Packing Quantity : 500 pcs./bag Minimum Packing Quantity : 500 pcs./bag 500 pcs./bag 

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**----- Start of picture text -----**<br>
Minimum Packing Quantity : 500 pcs./bag Minimum Packing Quantity : 500 pcs./bag 500 pcs./bag • Minimum Packing Quantity : 700 pcs./reel<br>Marking(TP, TP-FA)        Packing Type (TP-FA) : TL       Electrical Connection 2,4<br>B1202 D1802<br>1<br>RANK LOT No. RANK LOT No.<br>TL (For PNP, the polarity is reversed.)<br>;<br>3<br>**----- End of picture text -----**<br>


Semiconductor Components Industries, LLC, 2013 **September, 2013** 

92513 TKIM/82912 TKIM/42512EA TKIM/13004TN (KT)/92098HA (KT)/8259MO/4137KI/4116KI, TS  No.2113-1/7 

**2SB1202/2SD1802** 

## Continued from preceding page. 

|Continued from preceding page.|||||
|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|Unit|
|Collector Dissipation|PC||1|W|
|||Tc=25°C|15|W|
|Junction Temperature|Tj||150|°C|
|Storage Temperature|Tstg||--55 to +150|°C|



## **Electrical Characteristics** at Ta=25°C 

|**Electrical Characteristics** at Ta|=25°C||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|||Unit|
||||min|typ|max||
|Collector Cutoff Current|ICBO|VCB=(--)40V, IE=0A|||(--)1|μA|
|Emitter Cutoff Current|IEBO|VEB=(--)4V, IC=0A|||(--)1|μA|
|DC Current Gain|hFE1|VCE=(--)2V, IC=(--)100mA|100*||560*||
||hFE2|VCE=(--)2V, IC=(--)3A|35||||
|Gain-Bandwidth Product|fT|VCE=(--)10V, IC=(--)50mA||150||MHz|
|Output Capacitance|Cob|VCB=(--)10V, f=1MHz||(39)25||pF|
|Collector to Emitter Saturation Voltage|VCE(sat)|IC=(--)2A, IB=(--)100mA||(--0.35)0.19|(--0.7)0.5|mV|
|Base to Emitter Saturation Voltage|VBE(sat)|VCE=(--)2V, IC=(--)100mA||(--)0.94|(--)1.2|V|
|Collector to Base Breakdown Voltage|V(BR)CBO|IC=(--)10μA, IE=0A|(--)60|||V|
|Collector to Emitter Breakdown Voltage|V(BR)CEO|IC=(--)1mA, RBE=∞|(--)50|||V|
|Emitter to Base Breakdown Voltage|V(BR)EBO|IE=(--)10μA, IC=0A|(--)6|||V|
|Turn-On Time|ton|See specif ed Test Circuit.||70||ns|
|Storage Time|tstg|||(450)650||ns|
|Fall Time|tf|||35||ns|



* : The 2SB1202/2SD1802 are classifi ed by 100mA hFE as follows : 

|Rank|R|S|T|U|
|---|---|---|---|---|
|hFE|100 to 200|140 to 280|200 to 400|280 to 560|



## **Switching Time Test Circuit** 

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**----- Start of picture text -----**<br>
IB1<br>PW=20 μ s OUTPUT<br>D.C. ≤ 1% IB2<br>INPUT VR RB<br>RL<br>25 Ω<br>50 Ω<br>+ +<br>100 μ F 470 μ F<br>VBE= --5V VCC=25V<br>**----- End of picture text -----**<br>


IC=10IB1= --10IB2=1A For PNP, the polarity is reversed. 

## **Ordering Information** 

|**Ordering Information**||||
|---|---|---|---|
|Device|Package|Shipping|memo|
|2SB1202S-E|TP|500pcs./bag|Pb Free|
|2SB1202T-E|TP|500pcs./bag||
|2SD1802S-E|TP|500pcs./bag||
|2SD1802T-E|TP|500pcs./bag||
|2SB1202S-TL-E|TP-FA|700pcs./reel||
|2SB1202T-TL-E|TP-FA|700pcs./reel||
|2SD1802S-TL-E|TP-FA|700pcs./reel||
|2SD1802T-TL-E|TP-FA|700pcs./reel||



No.2113-2/7 

**2SB1202/2SD1802** 

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IC -- VCE IC -- VCE<br>--5 5<br>2SB1202 2SD1802<br>--4 4<br>--3 3<br>--2 2<br>--1 1<br>0 IB=0 0 IB=0<br>0 --0.4 --0.8 --1.2 --1.6 --2.0 0 0.4 0.8 1.2 1.6 2.0<br>Collector to Emitter Voltage, VCE  --  V ITR09162 Collector to Emitter Voltage, VCE  --  V ITR09163<br>IC -- VCE IC -- VCE<br>--2.0 2.0<br>2SB1202 2SD1802<br>--1.6 1.6<br>--1.2 1.2<br>--0.8 0.8<br>--0.4 0.4<br>0 IB=0 0 IB=0<br>0 --4 --8 --12 --16 --20 0 4 8 12 16 20<br>Collector to Emitter Voltage, VCE  --  V ITR09164 Collector to Emitter Voltage, VCE  --  V ITR09165<br>IC -- VBE IC -- VBE<br>--3.6 3.6<br>2SB1202 2SD1802<br>--3.2 VCE= --2V 3.2 VCE=2V<br>--2.8 2.8<br>--2.4 2.4<br>--2.0 2.0<br>--1.6 1.6<br>--1.2 1.2<br>--0.8 0.8<br>--0.4 0.4<br>0 0<br>0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 0 0.2 0.4 0.6 0.8 1.0 1.2<br>Base to Emitter Voltage, VBE  --  V ITR09166 Base to Emitter Voltage, VBE  --  V ITR09167<br>hFE  --  IC hFE  --  IC<br>1000 1000<br>2SB1202 2SD1802<br>7 VCE= --2 V 7 VCE=2V<br>5 5<br>3 3<br>2 2<br>100 100<br>7 7<br>5 5<br>5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5<br>Collector Current, IC  --  A ITR09168 Collector Current, IC  --  A ITR09169<br>--5mA<br>Ta=75°C<br>25°C<br>--25°C<br>5mA<br>2mA<br>1mA<br>--2mA<br>3mA<br>--10mA<br>4mA<br>--20mA<br>Ta=75°C<br>5mA<br>--25°C<br>--4mA<br>6mA<br>--6mA<br>25°C<br>10mA<br>7mA<br>8mA<br>--8mA<br>--50mA<br>80mA<br>60mA<br>20mA<br>--10mA<br>100mA<br>40mA<br>--12mA<br>--100mA<br>--200mA<br>--14mA<br>Ta=75°C<br>°C<br>25<br>°C<br>--25<br>°C<br>Ta=75<br>°C<br>--25<br>°C<br>25<br>Collector Current, IC  --  A Collector Current, IC  --  A<br>Collector Current, IC  --  A Collector Current, IC  --  A<br>Collector Current, IC  --  A Collector Current, IC  --  A<br>DC Current Gain, hFE DC Current Gain, hFE<br>**----- End of picture text -----**<br>


No.2113-3/7 

**2SB1202/2SD1802** 

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fT  --  IC fT  --  IC<br>1000 1000<br>2SB1202 2SD1802<br>7 7<br>VCE= --10V VCE=10V<br>5 5<br>3 3<br>2 2<br>100 100<br>7 7<br>5 5<br>3 3<br>2 2<br>10 10<br>--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3<br>Collector Current, IC  --  A ITR09170 Collector Current, IC  --  A ITR09171<br>Cob  --  VCB Cob  --  VCB<br>5 5<br>2SB1202 2SD1802<br>f=1MHz f=1MHz<br>3 3<br>2 2<br>100 100<br>7 7<br>5 5<br>3 3<br>2 2<br>10 10<br>--1.0 2 3 5 7 --10 2 3 5 7 --100 1.0 2 3 5 7 10 2 3 5 7 100<br>Collector to Base Voltage, VCB  --  V ITR09172 Collector to Base Voltage, VCB  --  V ITR09173<br>VCE(sat) -- IC VCE(sat)  --  IC<br>--1000 1000<br>2SB1202 2SD1802<br>7 7<br>IC / IB=20 IC / IB=20<br>5 5<br>3 3<br>2 2<br>--100 100<br>7 7<br>5 5<br>3 3<br>2 2<br>--10 10<br>5 7--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5<br>Collector Current, IC  --  A ITR09174 Collector Current, IC  --  A ITR09175<br>VBE(sat)  --  IC VBE(sat)  --  IC<br>--10 10<br>2SB1202 2SD18022SD1667<br>7 I C  / I B =20 7 I C  / I B =20<br>5 5<br>3 3<br>2 2<br>--1.0 1.0<br>7 7<br>5 5<br>3 3<br>5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5<br>Collector Current, IC  --  A ITR09176 Collector Current, IC  --  A ITR09177<br>Ta= --25°C Ta= --25°C<br>75°C 75°C<br>25°C 25°C<br>Ta= --25°C<br>75°C<br>°C<br>Ta= --25°C<br>75<br>°C<br>25<br>°C<br>25<br>Gain-Bandwidth Product, fT  --  MHz Gain-Bandwidth Product, fT  --  MHz<br>Output Capacitance, Cob  --  pF Output Capacitance, Cob  --  pF<br>Collector to Emitter Saturation Voltage, VCE(sat)  --  mV Collector to Emitter Saturation Voltage, VCE(sat)  --  mV<br>Base to Emitter  Saturation Voltage, VBE(sat)  --  V Base to Emitter  Saturation Voltage, VBE(sat)  --  V<br>**----- End of picture text -----**<br>


No.2113-4/7 

**2SB1202/2SD1802** 

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**----- Start of picture text -----**<br>
A S O<br>10<br>ICP=6A 2SB1202 / 2SD1802<br>5<br>IC=3A<br>3<br>2<br>1.0<br>5<br>3<br>2<br>0.1<br>5<br>3 Tc=25°C<br>2 Single pulse<br>0.01 For PNP, the minus sign is omitted.<br>3 5 7 1.0 2 3 5 7 10 2 3 5 7 100<br>Collector to Emitter Voltage, VCE  --  V ITR09178<br>100ms<br>DC operation Ta=25°<br>C<br>1ms<br>DC operation Tc=25C°10ms<br>Collector Current, IC  --  A<br>**----- End of picture text -----**<br>


**==> picture [218 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
PC  --  Ta<br>16<br>2SB1202 / 2SD1802<br>15<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140 160<br>Ambient Temperature, Ta  --  °C ITR09179<br>No heat sink<br>Ideal heat dissipation<br>Collector Dissipation, PC  --  W<br>**----- End of picture text -----**<br>


No.2113-5/7 

**2SB1202/2SD1802** 

## **Outline Drawing** 

**Land Pattern Example** 

2SB1202S-TL-E, 2SB1202T-TL-E, 2SD1802S-TL-E, 2SD1802T-TL-E 

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**----- Start of picture text -----**<br>
Mass (g) Unit<br>0.282<br>* For reference [mm]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Unit: mm<br>7.0<br>1.5<br>2.3 2.3<br>7.0<br>2.0<br>2.5<br>**----- End of picture text -----**<br>


No.2113-6/7 

**2SB1202/2SD1802** 

## **Outline Drawing** 

2SB1202S-E, 2SB1202T-E, 2SD1802S-E, 2SD1802T-E 

Mass (g) Unit 0.315 * For reference[mm] 

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”  must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

PS No.2113-7/7

Updated at February 9, 2023

onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.

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