2SB1188T100Q

2SB1188 / 2SB1182 / 2SB1240 

Transistors 

## − − Medium power transistor ( 32V, 2A) 

## **2SB1188 / 2SB1182 / 2SB1240** 

- **Features** 

- 1) Low VCE(sat). 

   - VCE(sat) = −0.5V (Typ.) 

   - (IC/IB = −2A / −0.2A) 

- 2) Complements the 2SD1766 / 2SD1758 / 2SD1862. 

## � **Structure** 

Epitaxial planar type PNP silicon transistor 

## � **External dimensions** (Unit : mm) 

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**----- Start of picture text -----**<br>
2SB1188 2SB1182<br>1.64.5 ±+− 0.10.20.1 1.5 −+ 0.10.2 6.55.1 +−± 0.20.10.2 C0.5 0.52.3 +±− 0.10.20.1<br>(1) (2) (3) 0.4 +− 0.050.1 0.75 0.9 0.65 ± 0.1<br>0.4 ± 0.1 0.5 ± 0.1 0.4 ± 0.1 0.55 ± 0.1<br>1.5 ± 0.1 1.5 ± 0.1 2.3 ± 0.2 2.3 ± 0.2 1.0 ± 0.2<br>3.0 ± 0.2<br>(1) Base (1) (2) (3) (1) Base<br>ROHM : MPT3 (2) Collector ROHM : CPT3 (2) Collector<br>EIAJ : SC-62 (3) Emitter EIAJ : SC-63 (3) Emitter<br>Abbreviated symbol: BC ∗<br>2SB1240<br>6.8 ± 0.2 2.5 ± 0.2<br>0.65Max.<br>0.5 ± 0.1<br>(1) (2) (3)<br>2.54 2.54<br>1.05 0.45 ± 0.1<br>(1) Emitter<br>ROHM : ATV  (2) Collector<br>(3) Base<br>0.10.5 ± 0.31.5 ±<br>0.34.0 ± 0.2 + 2.50.1 − 0.3 + 5.50.1 − 0.9 1.5 0.59.5 ±<br>2.5<br>0.21.0 ±<br>0.9 0.24.4 ±<br>1.0<br>14.50.5 ±<br>**----- End of picture text -----**<br>


∗[ Denotes h][FE] 

## � **Absolute maximum ratings** (Ta=25°C) 

|�**Absolute maximum ratings**(Ta=2|�**Absolute maximum ratings**(Ta=2|5°C)|||
|---|---|---|---|---|
|Parameter||Symbol|Limits|Unit|
|Collector-base voltage||VCBO|−40|V|
|Collector-emitter voltage||VCEO|−32|V|
|Emitter-base voltage||VEBO|−5|V|
|Collector current||IC|−2|A(DC)|
||||−3|A (Pulse)<br>∗1|
|Collector power<br>dissipation|2SB1188<br>|PC|0.5|W|
||||2|W<br>∗2|
||2SB1182<br>||10|W (Tc=25°C)|
||2SB1240||1|W<br>∗3|
|Junction temperature||Tj|150|°C|
|Storage temperature||Tstg|−55 to 150|°C|



- ∗[1  Single pulse, Pw][=][100ms] 

- ∗[2  When mounted on a 40][×][40][×][0.7 mm ceramic board.] 

- ∗[3  Printed circuit board, 1.7mm thick, collector copper plating 100mm][2][ or larger.] 

Rev.A 

1/3 

2SB1188 / 2SB1182 / 2SB1240 

Transistors 

## � **Electrical characteristics** (Ta=25°C) 

|�**Electrical characteristics**(Ta=25°|C)||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|Collector-base breakdown voltage|BVCBO|−40|−|−|V|IC= −50µA|
|Collector-emitter breakdown voltage|BVCEO|−32|−|−|V|IC= −1mA|
|Emitter-base breakdown voltage|BVEBO|−5|−|−|V|IE= −50µA|
|Collector cutoff current|ICBO|−|−|−1|µA|VCB= −20V|
|Emitter cutoff current|IEBO|−|−|−1|µA|VEB= −4V|
|Collector-emitter saturation voltage|VCE(sat)|−|−0.5|−0.8|V|∗<br>IC/IB= −2A/−0.2A|
|DC current transfer ratio|hFE|82|−|390|−|∗<br>VCE= −3V, IC= −0.5A|
|Transition frequency|fT|−|100|−|MHz|VCE= −5V, IE=0.5A, f=100MHz|
|Output capacitance|Cob|−|50|−|pF|VCB= −10V, IE=0A, f=1MHz|



∗[ Measured using pulse current.] 

## � **Packaging specifications and hFE** 

|Type|hFE|Package|Taping|Taping|Taping|
|---|---|---|---|---|---|
|||Code|T100|TL|TV2|
|||Basic ordering unit (pieces)|1000|2500|2500|
|2SB1188|PQR|||−|−|
|2SB1182|PQR||−||−|
|2SB1240|PQR||−|−||



## hFE values are classified as follows : 

|Item|P|Q|R|
|---|---|---|---|
|hFE|82 to 180|120 to 270|180 to 390|



## � **Electrical characteristic curves** 

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VCE = − 3V − 0.5 Ta = 25 ° C<br>− 1000 Ta = 100 ° C<br>− 500 − 4025 °° CC − 0.4<br>− 200<br>− 100 − 0.3<br>− 50<br>− 20 − 0.2<br>− 10<br>− 5 − 0.1<br>− 2<br>− 1 0 IB = 0A<br>0 − 0.2 − 0.4 − 0.6  − 0.8  − 1.0  − 1.2  − 1.4  − 1.6  − 1.8  − 2.0  − 2.2 0 − 0.4 − 0.8 − 1.2 − 1.6 − 2<br>BASE  TO  EMITTER  VOLTAGE : VBE (V) COLLECTOR  TO  EMITTER  VOLTAGE : VCE (V)<br>Fig.1  Grounded emitter propagation Fig.2  Grounded emitter output<br>characteristics characteristics<br>− 250 µ A<br>− 500 µ A<br>− 1mA<br>− 750 µ A<br>− 2mA<br>− 1.75mA<br>− 1.5mA<br>− 1.25mA<br>− 2.5mA − 2.25mA<br>(A)<br>(mA) C<br>C    CURRENT : I<br>COLLECTOR<br>COLLECTOR  CURRENT : I<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
500 Ta = 25 ° C<br>VCE = − 6V<br>− 3V<br>− 1V<br>200<br>100<br>50<br>20 − 5 − 10 − 20 − 50 − 100 − 200 − 500  − 1000 − 2000<br>COLLECTOR  CURRENT : IC (mA)<br>Fig.3  DC current gain vs.<br>collector curren (   )<br>FE<br>DC  CURRENT  GAIN : h<br>**----- End of picture text -----**<br>


Rev.A 

2/3 

## 2SB1188 / 2SB1182 / 2SB1240 

## Transistors 

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**----- Start of picture text -----**<br>
500 VCE = − 3V − 500 Ta = 25 ° C − 500 lC/lB = 10<br>Ta = 100 ° C<br>25 ° C<br>− 25 ° C<br>200 − 200 − 200<br>100 − 100 IC/IB = 50 − 100 Ta = 10025 °° CC<br>− 40 ° C<br>− 50<br>50 − 50 20<br>10 − 20<br>20 − 5 − 10 − 20 − 50 − 100 − 200 − 500 − 1000 − 2000 − 5 − 10 − 20 − 50 − 100 − 200 − 500  − 1000  − 2000 − 5 − 10 − 20 − 50 − 100 − 200 − 500  − 1000 − 2000<br>COLLECTOR  CURRENT : IC (mA) COLLECTOR  CURRENT : IC (mA) COLLECTOR  CURRENT : IC (mA)<br>Fig.4  DC current gain vs. Fig.5  Collector-emitter saturation Fig.6  Collector-emitter saturation<br>collector current (   ) voltage vs. collector current (   ) voltage vs. collector current (   )<br>Ta = 25 ° C 500 VTaCE == − 25 ° 5VC 300 Cib Taf = 1MHz = 25 ° C<br>− 1 200 IE = 0A<br>IC = 0A<br>IC /IB = 10 200 100<br>− 0.5 Cob<br>50<br>100<br>− 0.2 20<br>50<br>− 0.1 10<br>− 0.05 − 5 − 10 − 20 − 50 − 100 − 200 − 500 − 1000 − 2000 5 10 20 50 100 200 500 1000 2000 − 0.5 − 1 − 2 − 5 − 10 − 20 − 30<br>COLLETOR  CURRENT : IC (mA) EMITTER  CURRENT : IE (mA) COLLECTOR  TO  BASE  VOLTAGE : VCB (V)<br>EMITTER  TO  BASE  VOLTAGE        : VEB (V)<br>Fig.7  Base-emitter saturation voltage  Fig.8  Gain bandwidth product vs. Fig.9  Collector output capacitance vs.<br>vs. collector current emitter current collector-base voltage<br>Emitter input capacitance vs.<br>emitter-base voltage<br>− 5 − 5<br>IC Max. (pulse)   IC Max. (Pulse) PW=500 µ s<br>− 2 − 2<br>DC<br>− 1 − 1<br>− 0.5 − 0.5<br>PW=1ms<br>− 0.2 − 0.2 PW=100ms<br>− 0.1 − 0.1<br>− 0.05 − 0.05<br>Ta = 25 ° C Ta=25 ° C<br>− 0.02 ∗     nonrepetitiveSingle − 0.02 ∗     nonrepetitiveSingle<br>− 0.01     pulse − 0.01     pulse<br>− 0.1 − 0.2 − 0.5 − 1 − 2 − 5 − 10 − 20 − 50 − 0.1 − 0.2 − 0.5 − 1 − 2 − 5 − 10 − 20 − 50<br>COLLECTOR  TO  EMITTER  VOLTAGE :  VCE (V) COLLECTOR  TO  EMITTER  VOLTAGE :  VCE (V)<br>Fig.10  Safe operation area Fig.11  Safe operation area<br>(2SB1188) (2SB1182)<br>DC<br>Pw = 100ms ∗<br>P<br>w = 10ms ∗<br>(mV) (mV)<br>CE(sat)  CE(sat)<br>FE<br>DC  CURRENT GAIN : h<br>COLLECTOR  SATURATION  VOLTAGE : V COLLECTOR  SATURATION  VOLTAGE : V<br>(V) (pF)(pF)<br>BE(sat) (MHz)<br>T    : Cib<br>TRANSITION  FREQUENCY : f<br>BASE  SATURATION  VOLTAGE : V<br>COLLECTOR  OUTPUT  CAPACITANCE : Cob  EMITTER  INPUT  CAPACITANCE<br>(A) (A)<br>C  C<br>COLLECTOR  CURRENT : I COLLECTOR  CURRENT : I<br>**----- End of picture text -----**<br>


Rev.A 

3/3 

Appendix 

## Notes 

No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. 

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. 

## About Export Control Order in Japan 

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. 

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. 

Appendix1-Rev1.1