2SB1122S-TD-E
Bipolar (BJT) Single Transistor, PNP, 50 V, 1 A, 1.3 W, SOT-89, Surface Mount
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- No. of Pins: 3Pins
- Power Dissipation: 1.3W
- DC Current Gain hFE: 140hFE
- Transistor Mounting: Surface Mount
- Transistor Polarity: PNP
- Transition Frequency: 150MHz
- Transistor Case Style: SOT-89
- DC Current Gain hFE Min: 140hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 1A
- Collector Emitter Voltage Max: 50V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.175 € |
| Current stock | 1000+ |
| Lead time | 7 days |
- **Ordering number : EN2040C 2SB1122** - ~~—_~~ @ ## **Ordering number : EN2040C 2SB1122** ~~—_~~ **Bipolar Transistor –50V, –1A, Low VCE(sat) PNP Single PCP** http://onsemi.com ## **Applicaitons** - Voltage regulators relay drivers, lamp drivers, electrical equipment ## **Features** - Adoption of FBET process - Ultrasmall size making it easy to provide high-density hybrid IC’s ## **Specifi cations** **Absolute Maximum Ratings** at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector to Base Voltage VCBO --60 V Collector to Emitter Voltage VCEO --50 V Emitter to Base Voltage VEBO --5 V Collector Current IC --1 A ~~===~~ Collector Current (Pulse) ICP --2 A Continued on next page. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ## **Package Dimensions** unit : mm (typ) 7007B-004 ## **Product & Package Information** - Package : PCP - JEITA, JEDEC : SC-62, SOT-89, TO-243 - Minimum Packing Quantity : 1,000 pcs./reel **==> picture [293 x 278] intentionally omitted <==** **----- Start of picture text -----**<br> Top View 2SB1122S-TD-E<br>4.5 2SB1122T-TD-E<br>1.6 1.5<br>1 2 3<br>0.4<br>0.4<br>0.5<br>1.5<br>3.0<br>2<br>f= 0.75<br>1<br>3<br>1 : Base<br>2 : Collector<br>3 : Emitter<br>a 7<br>Bottom View PCP<br>2.5<br>1.0 4.0<br>**----- End of picture text -----**<br> ## **Packing Type: TD** ## **Marking** **==> picture [139 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> TD RANK<br>BE LOT No.<br>**----- End of picture text -----**<br> ## **Electrical Connection** Semiconductor Components Industries, LLC, 2013 **December, 2013** D0413 TKIM TC-00003072/31710EA TKIM/O1003TN (KOTO)/92098HA (KT)/4107KI/9266AT, TS No.2040-1/4 **2SB1122** ## Continued from preceding page. |Continued from preceding page.||||| |---|---|---|---|---| |Parameter|Symbol|Conditions|Ratings|Unit| |Collector Dissipation|PC|When mounted on ceramic substrate (250mm<br>2×0.8mm)|1.3|W| |Junction Temperature|Tj||150|°C| |Storage Temperature|Tstg||--55 to +150|°C| ## **Electrical Characteristics** at Ta=25°C |**Electrical Characteristics **at Ta|=25°C|||||| |---|---|---|---|---|---|---| |Parameter|Symbol|Conditions|Ratings|||Unit| ||||min|typ|max|| |Collector Cutoff Current|ICBO|VCB=--50V, IE=0A|||--100|nA| |Emitter Cutoff Current|IEBO|VEB=--4V, IC=0A|||--100|nA| |DC Current Gain|hFE1|VCE=--2V, IC=--100mA|140*||400*|| ||hFE2|VCE=--2V, IC=--1A|30|||| |Gain-Bandwidth Product|fT|VCE=--10V, IC=--50mA||150||MHz| |Output Capacitance|Cob|VCB=--10V, f=1MHz||12||pF| |Collector to Emitter Saturation Voltage|VCE(sat)|IC=--500mA, IB=--50mA||--180|--500|mV| |Base to Emitter Saturation Voltage|VBE(sat)|IC=--500mA, IB=--50mA||--0.9|--1.2|V| |Collector to Base Breakdown Voltage|V(BR)CBO|IC=--10μA, IE=0A|--60|||V| |Collector to Emitter Breakdown Voltage|V(BR)CEO|IC=--1mA, RBE=∞|--50|||V| |Emitter to Base Breakdown Voltage|V(BR)EBO|IE=--10μA, IC=0A|--5|||V| |Turn-ON Time|ton|See specif ed Test Circuit.||40||ns| |Storage Time|tstg|||300||ns| |Fall Time|tf|||30||ns| * : 2SB1122 is classifi ed by 100mA hFE as follows : |Rank|S|T| |---|---|---| |hFE|140 to 280|200 to 400| ## **Switching Time Test Circuit** **==> picture [162 x 105] intentionally omitted <==** **----- Start of picture text -----**<br> IB1<br>PW=20μs<br>D.C.≤1% IB2 OUTPUT<br>INPUT VR RB RL<br>50Ω<br>50Ω<br>+ +<br>100μF 470μF<br>VBE=5V VCC= --25V<br>**----- End of picture text -----**<br> IC=10IB1= --10IB2= --500mA ## **Ordering Information** **==> picture [477 x 233] intentionally omitted <==** **----- Start of picture text -----**<br> Device Package Shipping memo<br>2SB1122S-TD-E PCP 1,000pcs./reel<br>Pb Free<br>2SB1122T-TD-E PCP 1,000pcs./reel<br>IC -- VCE IC -- VBE<br>--1.0 --1200<br>VCE= --2V<br>--1000<br>--0.8<br>--800<br>--0.6<br>--600<br>--0.4<br>--400<br>--0.2<br>--200<br>IB=0mA<br>0 0<br>0 --1 --2 --3 --4 --5 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2<br>Collector to Emitter Voltage, VCE -- V ITR08877 Base to Emitter Voltage, VBE -- V ITR08879<br>--1mA<br>--2mA<br>--4mA<br>--6mA<br>--8mA<br>--10mA<br>--12mA<br>°C<br>Ta=75<br>°C<br>25<br>°C<br>--25<br>Collector Current, IC -- A<br>Collector Current, IC -- mA<br>**----- End of picture text -----**<br> No.2040-2/4 **2SB1122** **==> picture [228 x 737] intentionally omitted <==** **----- Start of picture text -----**<br> hFE -- IC<br>1000<br>7 VCE= --2V<br>5<br>3<br>2<br>100<br>7<br>5<br>3<br>2<br>10<br>7<br>5<br>5 7 --10 2 3 5 7 --100 2 3 5 7--1000 2 3<br>Collector Current, IC -- mA ITR08881<br>Cob -- VCB<br>5<br>f=1MHz<br>3<br>2<br>10<br>7<br>5<br>3<br>2<br>5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100<br>Collector to Base Voltage, VCB -- V ITR08884<br>VBE(sat) -- IC<br>--10<br>IC / IB=10<br>7<br>5<br>3<br>2<br>--1.0<br>7<br>5<br>3<br>2<br>5 7 --10 2 3 5 7 --100 2 3 5 7 --1000 2<br>Collector Current, IC -- mA ITR08887<br>PC -- Ta<br>1.4<br>1.3<br>1.2<br>1.0<br>0.8<br>0.6<br>0.5<br>0.4<br>0.2<br>0<br>0 20 40 60 80 100 120 140 160<br>°<br>Ambient Temperature, Ta -- C ITR08890<br>Ta= --25°C<br>--25°C<br>Ta=75°C<br>75°C<br>25°C<br>25°C<br>No heat sink<br>When mounted on ceramic substrate (250mm2✕<br>0.8mm)<br>DC Current Gain, hFE<br>Output Capacitance, Cob -- pF<br>Base to Emitter Saturation Voltage, VBE(sat) -- V<br>Collector Dissipation, PC -- W<br>**----- End of picture text -----**<br> **==> picture [228 x 552] intentionally omitted <==** **----- Start of picture text -----**<br> fT -- IC<br>5<br>VCE= --10V<br>3<br>2<br>100<br>7<br>5<br>3<br>2<br>10<br>5 7 --10 2 3 5 7 --100 2 3 5<br>Collector Current, IC -- mA ITR08883<br>VCE(sat) -- IC<br>--1000<br>IC / IB=10<br>7<br>5<br>3<br>2<br>--100<br>7<br>5<br>3<br>2<br>--10<br>5 7 --10 2 3 5 7 --100 2 3 5 7 --1000 2<br>Collector Current, IC -- mA ITR08885<br>S O A<br>3<br>ICP= --2A<br>2<br>IC= --1A<br>--1.0<br>7<br>5<br>3<br>2<br>--0.1<br>7<br>5<br>3<br>2 Ta=25°C Single pulse<br>--0.01 When mounted on ceramic substrate (250mm [2] ✕0.8mm)<br>5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100<br>Collector to Emitter Voltage, VCE -- V ITR08889<br>°C<br>--25<br>°C<br>Ta=75<br>°C<br>25<br>100ms<br>10ms<br>DC operation<br>1ms<br>Gain-Bandwidth Product, fT -- MHz<br>Collector to Emitter Saturation Voltage, VCE(sat) -- mV<br>Collector Current, IC -- A<br>**----- End of picture text -----**<br> No.2040-3/4 **2SB1122** ## **Outline Drawing** ## **Land Pattern Example** 2SB1122S-TD-E, 2SB1122T-TD-E **==> picture [482 x 370] intentionally omitted <==** **----- Start of picture text -----**<br> Mass (g) Unit Unit: mm<br>0.058<br>* For reference [mm]<br>2.2<br>45°<br>45°<br>1.0<br>1.0 1.5<br>3.0<br>0.9<br>3.7<br>1.5 1.8<br>**----- End of picture text -----**<br> ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.2040-4/4
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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