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2SA2016-TD-E
Bipolar (BJT) Single Transistor, PNP, 50 V, 7 A, 3.5 W, SOT-89, Surface Mount
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- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency ft:290MHz; Power Dissipation Pd:3.5W; DC Collector Current:-7A; DC Current Gain hFE:200hFE;
- MSL: MSL 1 - Unlimited
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 3.5W
- Transistor Mounting: Surface Mount
- Transistor Polarity: PNP
- Transition Frequency: 290MHz
- Transistor Case Style: SOT-89
- DC Current Gain hFE Min: 200hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 7A
- Collector Emitter Voltage Max: 50V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.317 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Ordering number : EN6309D 2SA2016/2SC5569** ~~9~~ **Bipolar Transistor (-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP** http://onsemi.com **(-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP** http://onsemi.com **Applicaitons** • Relay drivers, lamp drivers, motor drivers, fl ash **Features** • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation ( )2SA2016 **Specifi cations Absolute Maximum Ratings** at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (-50)100 V Collector-to-Emitter Voltage VCES (-50)100 V Collector-to-Emitter Voltage VCEO (--)50 V ~~==~~ Emitter-to-Base Voltage VEBO (--)6 V Continued on next page. **Package Dimensions Product & Package Information** unit : mm (typ) • Package : PCP 7008B-003 • JEITA, JEDEC : SC-62, SOT-89, TO-243 - Minimum Packing Quantity : 1,000 pcs./reel **==> picture [397 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> Top View<br>2SA2016-TD-E<br>4.5<br>2SC5569-TD-E Packing Type: TD<br>1.6 1.5<br>TD<br>1 2 3 Marking<br>0.4<br>0.4<br>0.5<br>1.5<br>3.0<br>2SA2016 2SC5569<br>0.75<br>Electrical Connection<br>2 2<br>1 : Base<br>2 : Collector<br>1 1<br>3 : Emitter<br>Bottom View PCP<br>Ty 4 3 4 3<br>2SA2016 2SC5569<br>2.5<br>4.0<br>1.0<br>AW LOT No. FF LOT No.<br>**----- End of picture text -----**<br> Semiconductor Components Industries, LLC, 2013 **September, 2013** 13013 TKIM/72512 TKIM/62405EA MSIM TB-00001406/52501 TS KT TA-3259 No.6309-1/8 **2SA2016 / 2SC5569** Continued from preceding page. |Continued from preceding page.||||| |---|---|---|---|---| |Parameter|Symbol|Conditions|Ratings|Unit| |Collector Current|IC||(--)7|A| |Collector Current(Pulse)|ICP||(--)10|A| |Base Current|IB||(--)1.2|A| |Collector Dissipation|PC|When mounted on ceramic substrate (250mm<br>2×0.8mm)|1.3|W| |||Tc=25°C|3.5|W| |Junction Temperature|Tj||150|°C| |Storage Temperature|Tstg||--55 to +150|°C| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ## **Electrical Characteristics** at Ta=25°C |**Electrical Characteristics **at Ta|=25°C|||||| |---|---|---|---|---|---|---| |Parameter|Symbol|Conditions|Ratings|||Unit| ||||min|typ|max|| |Collector Cutoff Current|ICBO|VCB=(--)40V, IE=0A|||(--)0.1|μA| |Emitter Cutoff Current|IEBO|VEB=(--)4V, IC=0A|||(--)0.1|μA| |DC Current Gain|hFE|VCE=(--)2V, IC=(--)500mA|200||560|| |Gain-Bandwidth Product|fT|VCE=(--)10V, IC=(--)500mA||(290)330||MHz| |Output Capacitance|Cob|VCB=(--)10V, f=1MHz||(50)28||pF| |Collector-to-Emitter Saturation Voltage|VCE(sat)1|IC=(--)3.5A, IB=(--)175mA||(--230)160|(--390)240|mV| ||VCE(sat)2|IC=(--)2A, IB=(--)40mA||(--240)110|(--400)170|mV| |Base-to-Emitter Saturation Voltage|VBE(sat)|IC=(--)2A, IB=(--)40mA||(--)0.83|(--)1.2|V| |Collector-to-Base Breakdown Voltage|V(BR)CBO|IC=(--)10μA, IE=0A|(--50)100|||V| |Collector-to-Emitter Breakdown Voltage|V(BR)CES|IC=(--)100μA, RBE=0Ω|(--50)100|||V| |Collector-to-Emitter Breakdown Voltage|V(BR)CEO|IC=(--)1mA, RBE=∞|(--)50|||V| |Emitter-to-Base Breakdown Voltage|V(BR)EBO|IE=(--)10μA, IC=0A|(--)6|||V| |Turn-On Time|ton|See specif ed Test Circuit.||(40)30||ns| |Storage Time|tstg|||(225)420||ns| |Fall Time|tf|||25||ns| ## **Switching Time Test Circuit** **==> picture [162 x 105] intentionally omitted <==** **----- Start of picture text -----**<br> IB1<br>PW=20 μ s OUTPUT<br>D.C. ≤ 1% IB2<br>INPUT VR RB RL<br>50 Ω<br>+ +<br>100 μ F 470 μ F<br>VBE= --5V VCC=25V<br>**----- End of picture text -----**<br> IC=20IB1= --20IB2=2.5A For PNP, the polarity is reversed. ## **Ordering Information** |**Ordering Information**|||| |---|---|---|---| |Device|Package|Shipping|memo| |2SA2016-TD-E|PCP|1,000pcs./reel|Pb Free| |2SC5569-TD-E|PCP|1,000pcs./reel|| No.6309-2/8 **2SA2016 / 2SC5569** **==> picture [481 x 737] intentionally omitted <==** **----- Start of picture text -----**<br> IC -- VCE IC -- VCE<br>--7 7<br>2SA2016 --90mA<br>--80mA<br>--6 --70mA 6<br>--60mA<br>--5 5<br>--4 4<br>--3 3<br>--2 2<br>--1 1<br>0 IB=0mA 0 2SC5569 IB=0mA<br>0 --0.4 --0.8 --1.2 --1.6 --2.0 0 0.4 0.8 1.2 1.6 2.0<br>Collector-to-Emitter Voltage, VCE -- V IT00206 Collector-to-Emitter Voltage, VCE -- V IT00207<br>--8 IC -- VBE 8 IC -- VBE<br>2SA2016 2SC5569<br>--7 VCE= --2V 7 VCE=2V<br>--6 6<br>--5 5<br>--4 4<br>--3 3<br>--2 2<br>--1 1<br>0 0<br>0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>Base-to-Emitter Voltage, VBE -- V IT00208 Base-to-Emitter Voltage, VBE -- V IT00209<br>1000 hFE -- IC 1000 hFE -- IC<br>2SA2016 2SC5569<br>75 VCE= --2V 75 Ta=75°C VCE=2V<br>3 3 25°C<br>2 --25°C 2 --25°C<br>100 100<br>7 7<br>5 5<br>3 3<br>2 2<br>10 10<br>--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10<br>Collector Current, IC -- A IT00210 Collector Current, IC -- A IT00211<br>VCE(sat) -- IC VCE(sat) -- IC<br>--1000 1000<br>7 2SA2016 7 2SC5569<br>5 IC / IB=20 5 IC / IB=20<br>3 3<br>2 2<br>--100 100<br>7 7<br>5 5<br>3 3<br>2 2<br>--10 10<br>7 7<br>5 5<br>3 3<br>2 2<br>--1.0 1.0<br>--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10<br>Collector Current, IC -- A IT00212 Collector Current, IC -- A IT00214<br>--10mA<br>Ta=75°C<br>--20mA<br>25°C<br>10mA<br>--30mA<br>30mA<br>20mA<br>50mA<br>60mA<br>--40mA<br>40mA<br>70mA<br>--50mA<br>--25°C<br>Ta=75°C<br>--25°C 25°C<br>°C<br>Ta=75<br>°C<br>25<br>--100mA<br>80mA<br>°C<br>Ta=75<br>°C<br>Ta=75<br>°C<br>--25<br>°C<br>25<br>°C<br>25<br>°C<br>--25<br>100mA<br>90mA<br>Collector Current, IC -- A Collector Current, IC -- A<br>Collector Current, IC -- A Collector Current, IC -- A<br>DC Current Gain, hFE DC Current Gain, hFE<br>Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV<br>**----- End of picture text -----**<br> No.6309-3/8 **2SA2016 / 2SC5569** **==> picture [227 x 736] intentionally omitted <==** **----- Start of picture text -----**<br> VCE(sat) -- IC<br>--10000<br>7 2SA2016<br>5 IC / IB=50<br>3<br>2<br>--1000<br>7<br>5<br>3<br>2<br>--100<br>7<br>5<br>3<br>2<br>--10<br>--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10<br>Collector Current, IC -- A IT00213<br>VBE(sat) -- IC<br>--10000<br>2SA2016<br>7 IC / IB=50<br>5<br>3<br>2<br>--1000<br>7<br>5<br>3<br>2<br>--100<br>--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10<br>Collector Current, IC -- A IT00216<br>Cob -- VCB<br>5<br>2SA2016<br>3 f=1MHz<br>2<br>100<br>7<br>5<br>3<br>2<br>10<br>7<br>5<br>3<br>2<br>5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5<br>Collector-to-Base Voltage, VCB -- V IT00218<br>fT -- IC<br>1000<br>2SA2016<br>7<br>VCE= --10V<br>5<br>3<br>2<br>100<br>7<br>5<br>3<br>2<br>10<br>5 7--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10<br>Collector Current, IC -- A IT00220<br>Ta= --25°C<br>25°C<br>75°C<br>--25°C<br>Ta=75°C<br>°C<br>25<br>75°C<br>25°C<br>Ta= --25°C<br>Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV<br>Base-to-Emitter Saturation Voltage, VBE(sat) -- mV<br>Output Capacitance, Cob -- pF<br>Gain-Bandwidth Product, fT -- MHz<br>**----- End of picture text -----**<br> **==> picture [225 x 736] intentionally omitted <==** **----- Start of picture text -----**<br> 10000 VCE(sat) -- IC<br>7 2SC5569<br>5 IC / IB=50<br>3<br>2<br>1000<br>7<br>5<br>3<br>2<br>100<br>7<br>5<br>3<br>2<br>10<br>0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10<br>Collector Current, IC -- A IT00215<br>10000 VBE(sat) -- IC<br>2SC5569<br>7 IC / IB=50<br>5<br>3<br>2<br>1000<br>7<br>5<br>3<br>2<br>100<br>0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10<br>Collector Current, IC -- A IT00217<br>Cob -- VCB<br>5<br>2SC5569<br>3 f=1MHz<br>2<br>100<br>7<br>5<br>3<br>2<br>10<br>7<br>5<br>3<br>2<br>5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5<br>Collector-to-Base Voltage, VCB -- V IT00219<br>fT -- IC<br>1000<br>2SC5569<br>7 VCE=10V<br>5<br>3<br>2<br>100<br>7<br>5<br>3<br>2<br>10<br>5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10<br>Collector Current, IC -- A IT00221<br>Ta= --25°C<br>75°C 25°C<br>--25°C<br>Ta=75°C °C<br>Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 25<br>Base-to-Emitter Saturation Voltage, VBE(sat) -- mV<br>Output Capacitance, Cob -- pF<br>Gain-Bandwidth Product, fT -- MHz<br>**----- End of picture text -----**<br> No.6309-4/8 **2SA2016 / 2SC5569** **==> picture [473 x 367] intentionally omitted <==** **----- Start of picture text -----**<br> A S O PC -- Ta<br>2 2.0<br>ICP=10A 100ms 2SA2016 / 2SC5569<br>10<br>7<br>5 IC=7A<br>3 1.5<br>2<br>1.3<br>1.0<br>7<br>5<br>1.0<br>3<br>2<br>0.1<br>75 2SA2016 / 2SC5569 0.5<br>3 Tc=25°C<br>2 Single pulse<br>0.01 For PNP, the minus sign is omitted. 0<br>0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 0 20 40 60 80 100 120 140 160<br>Collector-to-Emitter Voltage, VCE -- V IT00222 Ambient Temperature, Ta -- °C IT00223<br>PC -- Tc<br>4.0<br>2SA2016 / 2SC5569<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0<br>0 20 40 60 80 100 120 140 160<br>Case Temperature, Tc -- °C IT01535<br>Mounted on a ceramic board (250mm2✕<br>0.8mm)<br>DC operation<br>10ms<br>1m<br>s<br>500<br>μs<br>100<br>Collector Current, IC -- A μs<br>Collector Dissipation, PC -- W<br>Collector Dissipation, PC -- W<br>**----- End of picture text -----**<br> No.6309-5/8 **2SA2016 / 2SC5569** ## **Bag Packing Specifi cation** 2SA2016-TD-E, 2SC5569-TD-E **==> picture [168 x 38] intentionally omitted <==** No.6309-6/8 **2SA2016 / 2SC5569** **Outline Drawing** 2SA2016-TD-E, 2SC5569-TD-E **==> picture [254 x 370] intentionally omitted <==** **----- Start of picture text -----**<br> Mass (g) Unit<br>0.058<br>* For reference [mm]<br>**----- End of picture text -----**<br> ## **Land Pattern Example** **==> picture [215 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Unit: mm<br>2.2<br>1.0<br>1.0 1.5<br>3.0<br>3.7<br>1.5 1.8<br>**----- End of picture text -----**<br> No.6309-7/8 **2SA2016 / 2SC5569** ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.6309-8/8
Updated at March 24, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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