2SA1943OTU

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**2SA1943/FJL4215 PNP Epitaxial Silicon Transistor** 

## **Applications** 

- High-Fidelity Audio Output Amplifier 

- General Purpose Power Amplifier 

## **Features** 

- High Current Capability: IC = -17A. 

- High Power Dissipation : 150watts. 

- High Frequency : 30MHz. 

- High Voltage : VCEO= -250V 

TO-264 1 1.Base   2.Collector   3.Emitter 

- Wide S.O.A for reliable operation. 

- Excellent Gain Linearity for low THD. 

- Complement to 2SC5200/FJL4315. 

- Full thermal and electrical Spice models are available. 

- Same transistor is also available in: -- TO3P package, 2SA1962/FJA4213 : 130 watts -- TO220 package, FJP1943 : 80 watts 

- -- TO220F package,  FJPF1943  :  50 watts 

## **Absolute Maximum Ratings*  Ta = 25°C unless otherwise noted** 

|**Absolute Maximum Ratings*  Ta = 25°C unless otherwise noted**|**Absolute Maximum Ratings*  Ta = 25°C unless otherwise notedTa = 25°C unless otherwise noteda = 25°C unless otherwise noted = 25°C unless otherwise noted**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Ratings**<br>**Units**|**Units**|
|BVCBO|Collector-Base Voltage|-250|V|
|BVCEO|Collector-Emitter Voltage|-250|V|
|BVEBO|Emitter-Base Voltage|-5|V|
|IC|Collector Current|-17|A|
|IB|Base Current|-1.5|A|
|PD|Total Device Dissipation(TC=25°C)<br>Derate above 25°C|150<br>1.04|W<br>W/°C|
|TJ, TSTG|Junction and Storage Temperature|- 50 ~ +150|°C|



* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 

**Thermal Characteristics*** Ta=25°C unless otherwise noted 

|**Symbol**|**Parameter**|**Max.**<br>**Units**|**Units**|
|---|---|---|---|
|RθJC|Thermal Resistance, Junction to Case|0.83|°C/W|



- Device mounted on minimum pad size 

## **hFE Classification** 

|**hFE ClassificationFE Classification Classification**||||
|---|---|---|---|
|Classification||R|O|
|hFE1|55 ~ 110|55 ~ 110|80 ~ 160|



© 2009 Fairchild Semiconductor Corporation 2SA1943/FJL4215 Rev. C 

www.fairchildsemi.com 

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**Electrical Characteristics*** Ta=25°C unless otherwise noted 

|**Symbol**|**Parameter**|**Test Condition**|**Min.**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|---|---|
|BVCBO|Collector-Base Breakdown Voltage|IC=-5mA, IE=0|-250|||V|
|BVCEO|Collector-Emitter Breakdown Voltage|IC=-10mA, RBE=∞|-250|||V|
|BVEBO|Emitter-Base Breakdown Voltage|IE=-5mA, IC=0|-5|||V|
|ICBO|Collector Cut-off Current|VCB=-230V, IE=0|||-5.0|µA|
|IEBO|Emitter Cut-off Current|VEB=-5V, IC=0|||-5.0|µA|
|hFE1|DC Current Gain|VCE=-5V, IC=-1A|55||160||
|hFE2|DC Current Gain|VCE=-5V, IC=-7A|35|60|||
|VCE(sat)|Collector-Emitter Saturation Voltage|IC=-8A, IB=-0.8A||-0.4|-3.0|V|
|VBE(on)|Base-Emitter On Voltage|VCE=-5V, IC=-7A||-1.0|-1.5|V|
|fT|Current Gain Bandwidth Product|VCE=-5V, IC=-1A||30||MHz|
|Cob|Output Capacitance|VCB=-10V, f=1MHz||360||pF|



* Pulse Test: Pulse Width=20µs, Duty Cycle≤2% 

## **Ordering Information** 

|**Part Number**|**Marking**|**Package**|**Packing Method**|**Remarks**|
|---|---|---|---|---|
|2SA1943RTU|A1943R|TO-264|TUBE|hFE1 R grade|
|2SA1943OTU|A1943O|TO-264|TUBE|hFE1 O grade|
|FJL4215RTU|J4215R|TO-264|TUBE|hFE1 R grade|
|FJL4215OTU|J4215O|TO-264|TUBE|hFE1 O grade|



© 2009 Fairchild Semiconductor Corporation 2SA1943/FJL4215 Rev. C 

www.fairchildsemi.com 

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## **Typical Characteristics** 

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-20-18 IB = -1A IB = -900mAIIBB = -800mA = -700mA Tj = 125oC Tj = 25oC VCE = -5V<br>-16<br>-14 100<br>-12 IB = -300mA<br>-10 IB = -200mA Tj = -25oC<br>-8<br>IB = -100mA 10<br>-6<br>-4<br>-2<br>1<br>-0 -2 -4 -6 -8 -10 0.1 1 10<br>VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT<br>Figure 1. Static Characteristic Figure 2. DC current Gain ( R Grade )<br>10000<br>Tj = 125oC Tj = 25oC VCE = -5V Ic=-10Ib<br>100<br>1000<br>Tj = -25oC<br>10 Tj=125oC Tj=25oC<br>100<br>Tj=-25oC<br>1 10<br>0.1 1 10 0.1 1 10<br>IC[A], COLLECTOR CURRENT Ic[A], COLLECTOR CURRENT<br>Figure 3. DC current Gain  ( O Grade ) Figure 4. Collector-Emitter Saturation Voltage<br>14<br>10000<br>Ic=-10Ib 12<br>VCE = 5V<br>10<br>8<br>Tj=-25oC Tj=25oC<br>1000 6<br>Tj=125oC 4<br>2<br>0<br>100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4<br>0.1 1 10<br>Ic[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE<br>IIBIB = -600mAB = -500mA = -400mA<br>[mA], COLLECTOR CURRENTIC , DC CURRENT GAINhFE<br>, DC CURRENT GAIN<br>FE<br>h<br>Vce(sat)[mV], SATURATION VOLTAGE<br>[A], COLLECTOR CURRENTIC<br>Vbe(sat)[mV], SATURATION VOLTAGE<br>**----- End of picture text -----**<br>


**Figure 5. Base-Emitter Saturation Voltage** 

**Figure 6. Base-Emitter On Voltage** 

© 2009 Fairchild Semiconductor Corporation 2SA1943/FJL4215 Rev. C 

www.fairchildsemi.com 

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## **Typical Characteristics** 

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100<br>1.0<br>0.9 IC MAX. (Pulsed*)<br>0.8 10ms*<br>10<br>0.7 IC MAX. (DC) 100ms*<br>0.6 DC<br>0.5 1<br>0.4<br>0.3<br>0.1<br>0.2<br>*SINGLE NONREPETITIVE<br>0.1  PULSE TC=25[oC]<br>0.01<br>1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 1 10 100<br>Pulse duration [sec] VCE [V], COLLECTOR-EMITTER VOLTAGE<br>oC / W][thjc<br> [A], COLLECTOR CURRENTIC<br>Transient Thermal Resistance, R<br>**----- End of picture text -----**<br>


**Figure 7. Thermal Resistance** 

**Figure 8. Safe Operating Area** 

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160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 25 50 75 100 125 150 175<br>TC[oC], CASE TEMPERATURE<br>[W], POWER DISSIPATIONPC<br>**----- End of picture text -----**<br>


**Figure 9. Power Derating** 

© 2009 Fairchild Semiconductor Corporation 2SA1943/FJL4215 Rev. C 

www.fairchildsemi.com 

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18.30<br>17.70<br>B 20.2019.80 5.204.80 A 16.60<br>1.00 7.40<br>2.00 12.00<br>6.20 3.50 7.00<br>C R2.00 C<br>5.80 3.10<br>0.254 A B<br>1.20<br>0.80<br>9.10<br>C 0.50 21.62<br>8.90<br>21.02<br>20.20<br>19.80<br>R1.00 C<br>1.70<br>1.30<br>1.50<br>4.05 3.20 2.60<br>[C]<br>2.80 2.40<br>3.10 1.50 1.50<br>[C]<br>2.70 20.50 2.50<br>C [C]<br>2.30 [ 2X] 19.50<br>1.25<br>C<br>0.90<br>0.254 [M] A B<br>5.75 5.75 0.85 [C]<br>5.15 5.15 0.50<br>FRONT VIEW SIDE VIEW BACK VIEW<br>**----- End of picture text -----**<br>


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3.70 5.20<br>0.15 3.30 4.80<br>**----- End of picture text -----**<br>


## **BOTTOM VIEW** 

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NOTES: 

- A. PACKAGE REFERENCE: JEDEC TO264 VARIATION AA. 

- B. ALL DIMENSIONS ARE IN MILLIMETERS. 

- C OUT OF JEDEC STANDARD VALUE. 

- D. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. 

- E. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. 

- F.  THIS PACKAGE IS INTENDED ONLY FOR 

- "FS PKG CODE AR" 

- G. DRAWING FILE NAME: TO264A03REV2 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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