2SA1774G
Bipolar (BJT) Single Transistor, PNP, 60 V, 100 mA, 150 mW, SOT-416, Surface Mount
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:140MHz; Power Dissipation Pd:150mW; DC Collector Current:-100mA; DC Current Gain hFE:120hFE; Transis
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (19-Jan-2021)
- No. of Pins: 3Pins
- Product Range: 2NXXXX
- Qualification: AEC-Q101
- Power Dissipation: 150mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: PNP
- Transition Frequency: 140MHz
- Transistor Case Style: SOT-416
- DC Current Gain hFE Min: 120hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max: 60V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.052 € |
| Current stock | 1000+ |
| Lead time | 7 days |
2SA1774G, S2SA1774G ## PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SC−75/SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a premium. ## **http://onsemi.com** ## **Features** - Reduces Board Space - High hFE, 210−460 (typical) - Low VCE(sat), < 0.5 V - Available in 8 mm, 7−inch/3000 Unit Tape and Reel - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable **SC−75 CASE 463 STYLE 1** COLLECTOR 3 - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* **MAXIMUM RATINGS** (TA = 25 ° C) 1 2 **Rating Symbol Value Unit** BASE EMITTER Collector − Emitter Voltage V(BR)CBO −60 Vdc **MARKING DIAGRAM** Collector − Base Voltage V(BR)CEO −50 Vdc Emitter − Base Voltage V(BR)EBO −6.0 Vdc Collector Current − Continuous IC −100 mAdc F9 M **THERMAL CHARACTERISTICS** ~~Sa~~ 1 **Characteristic Symbol Max Unit** F9 = Device Code Power Dissipation (Note 1) PD 150 mW M = Date Code* Junction Temperature TJ 150 ° C = Pb−Free Package ~~=~~ Storage Temperature Range Tstg ~~a~~ −55 ~ +150 ° C (Note: Microdot may be in either location) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended upon manufacturing location. Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. 1. Device mounted on a FR−4 glass epoxy printed circuit board using the minimum recommended footprint. **ORDERING INFORMATION Device Package Shipping**[†] 2SA1774G SC−75 3,000/Tape & Reel (Pb−Free) S2SA1774G SC−75 3,000/Tape & Reel (Pb−Free) 2SA1774T1G SC−75 3,000/Tape & Reel (Pb−Free) ~~===~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **2SA1774/D** **1** © Semiconductor Components Industries, LLC, 2012 **September, 2012 − Rev. 9** **2SA1774G, S2SA1774G** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C)|||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |Collector−Base Breakdown Voltage<br>(IC= −50�Adc, IE= 0)|V(BR)CBO|−60|−|−|Vdc| |Collector−Emitter Breakdown Voltage<br>(IC= −1.0 mAdc, IB= 0)|V(BR)CEO|−50|−|−|Vdc| |Emitter−Base Breakdown Voltage<br>(IE= −50�Adc, IE= 0)|V(BR)EBO|−6.0|−|−|Vdc| |Collector−Base Cutoff Current<br>(VCB= −30 Vdc, IE= 0)|ICBO|−|−|−0.5|nA| |Emitter−Base Cutoff Current<br>(VEB= −5.0 Vdc, IB= 0)|IEBO|−|−|−0.5|�A| |Collector−Emitter Saturation Voltage (Note 2)<br>(IC= −50 mAdc, IB= −5.0 mAdc)|VCE(sat)|−|−|−0.5|Vdc| |DC Current Gain (Note 2)<br>(VCE= −6.0 Vdc, IC= −1.0 mAdc)|hFE|120|−|560|−| |Transition Frequency<br>(VCE= −12 Vdc, IC= −2.0 mAdc, f = 30 MHz)|fT|−|140|−|MHz| |Output Capacitance<br>(VCB= −12 Vdc, IE= 0 Adc, f = 1 MHz)|COB|−|3.5|−|pF| 2. Pulse Test: Pulse Width ≤ 300 � s, D.C. ≤ 2%. **http://onsemi.com** **2** **2SA1774G, S2SA1774G** ## **TYPICAL ELECTRICAL CHARACTERISTICS** **==> picture [492 x 603] intentionally omitted <==** **----- Start of picture text -----**<br> 1 1.2<br>IC/IB = 10 IC/IB = 10<br>1.1<br>1<br>0.9 TA = −55 ° C<br>TA = 25 ° C 0.8<br>0.1 TA = 150 ° C 0.7 TA = 25 ° C<br>0.6<br>0.5 TA = 150 ° C<br>0.4<br>TA = −55 ° C<br>0.3<br>0.01<br>0.2<br>0.1 1.0 10 100 1000 0.1 1.0 10 100 1000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 1. Collector−Emitter Saturation Voltage Figure 2. Base−Emitter Saturation Voltage vs.<br>vs. Collector Current Collector Current<br>1000 TA = 150 ° C VCE = 6 V 2.01.8 IC = 100 mA TA = 25 ° C<br>TA = 25 ° C 1.6 IC = 50 mA<br>TA = −55 ° C 1.4<br>1.2 IC = 30 mA<br>100 1.0<br>0.8 IC = 10 mA<br>0.6<br>0.4<br>0.2<br>10 0<br>0.1 1.0 10 100 1000 0.01 0.1 1.0 10 100<br>IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)<br>Figure 3. DC Current Gain vs. Collector Figure 4. Saturation Region<br>Current<br>1 100<br>VCE = 2 V<br>0.9<br>TA = −55 ° C<br>0.8<br>0.7 TA = 25 ° C Cibo<br>0.6 10<br>Cobo<br>0.5<br>TA = 150 ° C<br>0.4<br>0.3<br>0.2 1<br>0.1 1.0 10 100 1000 0.1 1.0 10 100<br>IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (V)<br>, BASE−EMITTER<br>, COLLECTOR−EMITTER BE(sat)<br>CE V<br>V SATURATION VOLTAGE (V) SATURATION VOLTAGE (V)<br>, DC CURRENT GAIN , COLLECTOR−EMITTER<br>FE<br>h<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER ON VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>BE(ON)<br>V<br>**----- End of picture text -----**<br> **Figure 5. Base−Emitter Turn−ON Voltage vs. Figure 6. Capacitance Collector Current** **http://onsemi.com** **3** **2SA1774G, S2SA1774G** ## **TYPICAL ELECTRICAL CHARACTERISTICS** **==> picture [492 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 1000<br>VCE = −2 V<br>TA = 25 ° C 100 ms<br>100 10 ms<br>1 ms<br>100 Thermal<br>Limit<br>10<br>Single Pulse Test at TA = 25 ° C<br>10 1<br>0.1 1.0 10 100 1000 1.0 10 100<br>IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)<br>PRODUCT (MHz)<br>, CURRENT GAIN BANDWIDTH , COLLECTOR CURRENT (mA)<br>ftau IC<br>**----- End of picture text -----**<br> **Figure 7. Current Gain Bandwidth Product vs. Collector Current** **Figure 8. Safe Operating Area** **http://onsemi.com** **4** **2SA1774G, S2SA1774G** ## **PACKAGE DIMENSIONS** **SC−75/SOT−416** CASE 463 ISSUE F **==> picture [422 x 159] intentionally omitted <==** **----- Start of picture text -----**<br> −E− NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>TT 2. CONTROLLING DIMENSION: MILLIMETER.<br>2<br>MILLIMETERS INCHES<br>3 DIM MIN NOM MAX MIN NOM MAX<br>e −D−<br>A 0.70 0.80 0.90 0.027 0.031 0.035<br>1 A1 0.00 0.05 0.10 0.000 0.002 0.004<br>b 3 PL b 0.15 0.20 0.30 0.006 0.008 0.012<br>0.20 (0.008) M D C 0.10 0.15 0.25 0.004 0.006 0.010<br>HE 0.20 (0.008) E DE 0.701.55 0.801.60 0.901.65 0.0590.027 0.0630.031 0.0670.035<br>e 1.00 BSC 0.04 BSC<br>e lo -====—— L 0.10 0.15 0.20 0.004 0.006 0.008<br>HE 1.50 1.60 1.70 0.061 0.063 0.065<br>C A STYLE 1:PIN 1. BASE<br> 2. EMITTER<br> 3. COLLECTOR<br>L A1<br>**----- End of picture text -----**<br> ## **SOLDERING FOOTPRINT*** **==> picture [173 x 136] intentionally omitted <==** **----- Start of picture text -----**<br> 0.356<br>0.014<br>an<br>1.803 0.787<br>0.071 0.031<br>0.508 La<br>0.020 1.000<br>oe 0.039<br>SCALE 10:1 mm<br>= inches<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **ON Semiconductor Website** : **www.onsemi.com** **LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your loca **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ## **LITERATURE FULFILLMENT** : **http://onsemi.com** **2SA1774/D** **5**
Updated at March 22, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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