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2SA1419T-TD-E.
Bipolar (BJT) Single Transistor, PNP, 160 V, 1.5 A, 500 mW, SOT-89, Surface Mount
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- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- SVHC: No SVHC (15-Jan-2018)
- No. of Pins: 3Pins
- Product Range: 2SA1419
- Qualification: -
- Power Dissipation: 500mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: PNP
- Transition Frequency: 120MHz
- Transistor Case Style: SOT-89
- DC Current Gain hFE Min: 200hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 1.5A
- Collector Emitter Voltage Max: 160V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.183 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Ordering number : EN2007C** ## **2SA1419/2SC3649** ## **Bipolar Transistor (–)160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single PCP** http://onsemi.com ## **Features** - Adoption of FBET, MBIT processes - High breakdown voltage and large current capacity - Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s ## **Specifi cations**[( ) : 2SA1419] ## **Absolute Maximum Ratings** at Ta=25°C |**Absolute Maximum Ratingsgss**at Ta=25°C|at Ta=25°C|||| |---|---|---|---|---| |Parameter|Symbol|Conditions|Ratings|Unit| |Collector-to-Base Voltage|VCBO||(--)180|V| |Collector-to-Emitter Voltage|VCEO||(--)160|V| |Emitter-to-Base Voltage|VEBO||(--)6|V| |Collector Current|IC||(--)1.5|A| |Collector Current(Pulse)|ICP||(--)2.5|A| |Collector Dissipation|PC||500|mW| |||When mounted on ceramic substrate (250mm<br>2×0.8mm)|1.5|W| |Junction Temperature|Tj||150|°C| |Storage Temperature|Tstg||--55 to +150|°C| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ## **Package Dimensions** ## **Product & Package Information** **==> picture [481 x 321] intentionally omitted <==** **----- Start of picture text -----**<br> unit : mm (typ) • Package : PCP<br>7007B-004 • JEITA, JEDEC : SC-62, SOT-89, TO-243<br>• Minimum Packing Quantity : 1,000 pcs./reel<br>Top View 2SA1419S-TD-E<br>4.5 2SA1419S-TD-H Packing Type: TD<br>1.6 1.5 2SA1419T-TD-E<br>2SA1419T-TD-H<br>2SC3649S-TD-E<br>2SC3649S-TD-H<br>2SC3649T-TD-E TD<br>2SC3649T-TD-H<br>1 2 3 Marking<br>0.4<br>0.4<br>0.5<br>1.5<br>a 3.0<br>RANK RANK<br>2SA1419 2SC3649<br>0.75<br>Electrical Connection<br>2 2<br>1 : Base<br>2 : Collector 1 1<br>3 : Emitter<br>eG<br>Bottom View PCP 3 3<br>2SA1419 2SC3649<br>2.5<br>1.0 4.0<br>AE LOT No. CE LOT No.<br>**----- End of picture text -----**<br> Semiconductor Components Industries, LLC, 2013 **August, 2013** 82212 TKIM/31010CB TKIM/O3103TN (KT)/71598HA (KT)/4277TA, TS No.2007-1/7 **2SA1419 / 2SC3649** ## **Electrical Characteristics** at Ta=25°C |**Electrical Characteristics **at Ta|=25°C|||||| |---|---|---|---|---|---|---| |Parameter|Symbol|Conditions|Ratings|||Unit| ||||min|typ|max|| |Collector Cutoff Current|ICBO|VCB=(--)120V, IE=0A|||(--)1|μA| |Emitter Cutoff Current|IEBO|VEB=(--)4V, IC=0A|||(--)1|μA| |DC Current Gain|hFE1|VCE=(--)5V, IC=(--)100mA|100*||400*|| ||hFE2|VCE=(--)5V, IC=(--)10mA|80|||| |Gain-Bandwidth Product|fT|VCE=(--)10V, IC=(--)50mA||120||MHz| |Output Capacitance|Cob|VCB=(--)10V, f=1MHz||(22)14||pF| |Collector-to-Emitter Saturation Voltage|VCE(sat)|IC=(--)500mA, IB=(--)50mA||(--200)130|(--500)450|mV| |Base-to-Emitter Saturation Voltage|VBE(sat)|IC=(--)500mA, IB=(--)50mA||(--)0.85|(--)1.2|V| |Collector-to-Base Breakdown Voltage|V(BR)CBO|IC=(--)10μA, IE=0A|(--)180|||V| |Collector-to-Emitter Breakdown Voltage|V(BR)CEO|IC=(--)1mA, RBE=∞|(--)160|||V| |Emitter-to-Base Breakdown Voltage|V(BR)EBO|IE=(--)10μA, IC=0A|(--)6|||V| |Turn-ON Time|ton|See specif ed Test Circuit.||(40)40||ns| |Storage Time|tstg|||(0.7)1.2||μs| |Fall Time|tf|||(40)80||ns| * : The 2SA1419 / 2SC3649 are classifi ed by 100mA hFE as follows : |Rank|R|S|T| |---|---|---|---| |hFE|100 to 200|140 to 280|200 to 400| ## **Switching Time Test Circuit** **==> picture [148 x 132] intentionally omitted <==** **----- Start of picture text -----**<br> IB1<br>PW=20 μ s<br>D.C. ≤ 1% IB2<br>INPUT RB RL<br>VR<br>50 Ω<br>+ +<br>100 μ F 470 μ F<br>--5V 100V<br>IC=10IB1=--10IB2=0.7A<br>(For PNP, the polarity is reversed)<br>**----- End of picture text -----**<br> ## **Ordering Information** |**Ordering Information**|||| |---|---|---|---| |Device|Package|Shipping|memo| |2SA1419S-TD-E|PCP|1,000pcs./reel|Pb Free| |2SA1419S-TD-H|PCP|1,000pcs./reel|Pb Free and Halogen Free| |2SA1419T-TD-E|PCP|1,000pcs./reel|Pb Free| |2SA1419T-TD-H|PCP|1,000pcs./reel|Pb Free and Halogen Free| |2SC3649S-TD-E|PCP|1,000pcs./reel|Pb Free| |2SC3649S-TD-H|PCP|1,000pcs./reel|Pb Free and Halogen Free| |2SC3649T-TD-E|PCP|1,000pcs./reel|Pb Free| |2SC3649T-TD-H|PCP|1,000pcs./reel|Pb Free and Halogen Free| No.2007-2/7 **2SA1419 / 2SC3649** **==> picture [472 x 737] intentionally omitted <==** **----- Start of picture text -----**<br> IC -- VCE IC -- VCE<br>--1.8 1.8<br>2SA1419 2SC3649<br>--1.6 1.6<br>--1.4 1.4<br>--1.2 1.2<br>--1.0 1.0<br>--0.8 0.8<br>--0.6 0.6<br>--0.4 0.4<br>--0.2 0.2<br>IB=0mA IB=0mA<br>0 0<br>0 --1 --2 --3 --4 --5 0 1 2 3 4 5<br>Collector-to-Emitter Voltage, VCE -- V ITR03571 Collector-to-Emitter Voltage, VCE -- V ITR03572<br>IC -- VCE IC -- VCE<br>--1.0 1.0<br>2SA1419 2SC3649<br>--0.8 0.8<br>--0.6 0.6<br>--0.4 0.4<br>--0.2 0.2<br>IB=0mA IB=0mA<br>00 -- 10 -- 20 -- 30 -- 40 -- 50 00 10 20 30 40 50<br>Collector-to-Emitter Voltage, VCE -- V ITR03573 Collector-to-Emitter Voltage, VCE -- V ITR03574<br>-- 1.6 IC -- VBE 1.6 IC -- VBE<br>2SA1419 2SC3649<br>V CE =--5V V CE =5V<br>-- 1.2 1.2<br>-- 0.8 0.8<br>-- 0.4 0.4<br>0 0 -- 0.2 -- 0.4 -- 0.6 -- 0.8 -- 1.0 -- 1.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2<br>Base-to-Emitter Voltage, VBE -- V ITR03575 Base-to-Emitter Voltage, VBE -- V ITR03576<br>hFE -- IC hFE -- IC<br>1000 1000<br>2SA1419 2SC3649<br>7 7<br>VCE=--5V VCE=5V<br>5 5<br>3 3<br>2 2<br>100 100<br>7 7<br>5 5<br>3 3<br>2 2<br>10 -- 5 -- 7 -- 0.01 -- 2 -- 3 -- 5 -- 7 -- 0.1 -- 2 -- 3 -- 5 -- 7 -- 1.0 -- 2 -- 3 10 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3<br>Collector Current, IC -- A ITR03577 Collector Current, IC -- A ITR03578<br>--2mA<br>1mA<br>--25°C<br>--25°C<br>--1mA<br>0.5mA<br>25°C 25°C<br>1.0mA<br>--0.5mA<br>1.5mA<br>Ta=75°C<br>2.0mA<br>--1.0mA<br>--1.5mA<br>3.0mA<br>2.5mA<br>--3.0mA<br>--2.0mA<br>--2.5mA<br>Ta=75°C<br>2mA<br>--3.5mA<br>4.0mA<br>--5mA<br>30mA<br>--4.5mA<br>--4.0mA<br>50mA<br>40mA<br>10mA<br>20mA<br>5mA<br>--5.0mA<br>3.5mA<br>--80mA<br>--20mA<br>--10mA<br>--60mA<br>--40mA<br>5.0mA<br>4.5mA<br>°C<br>Ta=75 °C<br>Ta=75<br>°C<br>25 °C<br>25<br>°C<br>--25<br>°C<br>--25<br>Collector Current, IC -- A Collector Current, IC -- A<br>Collector Current, IC -- A Collector Current, IC -- A<br>Collector Current, IC -- A Collector Current, IC -- A<br>DC Current Gain, hFE DC Current Gain, hFE<br>**----- End of picture text -----**<br> No.2007-3/7 **2SA1419 / 2SC3649** **==> picture [483 x 737] intentionally omitted <==** **----- Start of picture text -----**<br> fT -- IC Cob -- VCB<br>5 100<br>2SA1419 / 2SC3649 2SA1419 / 2SC3649<br>7<br>3<br>5<br>2<br>3<br>100<br>2<br>7<br>5<br>10<br>3<br>7<br>2<br>5<br>For PNP, minus sign is omitted For PNP, minus sign is omitted<br>10 3<br>0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 1.0 2 3 5 7 10 2 3 5 7 100<br>Collector Current, IC -- A ITR03579 Collector-to-Base Voltage, VCB -- V ITR03580<br>VCE(sat) -- IC VCE(sat) -- IC<br>3 3<br>2SA1419 2SC3649<br>2 IC / IB=10 2 IC / IB=10<br>-- 1000 1000<br>7 7<br>5 5<br>3 3<br>2 2<br>-- 100 100<br>7 7<br>5 5<br>3 3<br>2 2<br>7 -- 0.01 2 3 5 7 -- 0.1 2 3 5 7 -- 1.0 2 3 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3<br>Collector Current, IC -- A ITR03581 Collector Current, IC -- A ITR03582<br>-- 10 VBE(sat) -- IC 10 VBE(sat) -- IC<br>2SA1419 2SC3649<br>7 IC / IB=10 7 IC / IB=10<br>5 5<br>3 3<br>2 2<br>-- 1.0 1.0<br>7 7<br>5 5<br>3 3<br>7 -- 0.01 2 3 5 7 -- 0.1 2 3 5 7 -- 1.0 2 3 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3<br>Collector Current, IC -- A ITR03583 Collector Current, IC -- A ITR03584<br>A S O PC -- Ta<br>5 1.8<br>3 ICP=2.5A 2SA1419 / 2SC3649 2SA1419 / 2SC3649<br>2 IC=1.5A 1.6<br>1.0 1.4<br>7<br>5 1.2<br>3<br>2 1.0<br>0.1 0.8<br>7<br>5 0.6<br>3<br>2 0.4<br>For PNP, minus sign is omitted<br>0.01 Single pulse Ta=25°C 0.2<br>7 Mounted on a ceramic board (250mm [2] ✕0.8mm)<br>5 0<br>7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 0 20 40 60 80 100 120 140 160<br>Collector-to-Emitter Voltage, VCE -- V ITR03585 Ambient Temperature, Ta -- °C ITR03586<br>2SA1419<br>--25°C --25°C<br>Ta=--25°C Ta=--25°C<br>25°C 25°C<br>25°C 75°C 25°C 75°C<br>Ta=75°C<br>2SC3649<br>Ta=75°C<br>No heat sink<br>2SA1419<br>2SC3649<br>DC operation<br>100ms<br>10ms<br>Mounted on a ceramic board (250mm2✕<br>0.8mm)<br>1ms<br>Output Capacitance, Cob -- pF<br>Gain-Bandwidth Product, fT -- MHz<br>Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV<br>Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V<br>Collector Current, IC -- A<br>Collector Dissipation, PC -- W<br>**----- End of picture text -----**<br> No.2007-4/7 **2SA1419 / 2SC3649** ## **Bag Packing Specifi cation** 2SA1419S-TD-E, 2SA1419S-TD-H, 2SA1419T-TD-E, 2SA1419T-TD-H, 2SC3649S-TD-E, 2SC3649S-TD-H, 2SC3649T-TD-E, 2SC3649T-TD-H **==> picture [168 x 38] intentionally omitted <==** No.2007-5/7 **2SA1419 / 2SC3649** ## **Outline Drawing** ## **Land Pattern Example** 2SA1419S-TD-E, 2SA1419S-TD-H, 2SA1419T-TD-E, 2SA1419T-TD-H, 2SC3649S-TD-E, 2SC3649S-TD-H, 2SC3649T-TD-E, 2SC3649T-TD-H **==> picture [254 x 370] intentionally omitted <==** **----- Start of picture text -----**<br> Mass (g) Unit<br>0.058<br>* For reference [mm]<br>**----- End of picture text -----**<br> **==> picture [215 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Unit: mm<br>2.2<br>45°<br>45°<br>1.0<br>1.0 1.5<br>3.0<br>0.9<br>3.7<br>1.5 1.8<br>**----- End of picture text -----**<br> No.2007-6/7 **2SA1419 / 2SC3649** ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.2007-7/7
Updated at March 22, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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