2PD1820AR,115

Bipolar (BJT) Single Transistor, NPN, 50 V, 500 mA, 200 mW, SC-70, Surface Mount

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Manufacturer: NEXPERIA
Product type:
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Product Range: 2PD1820A
Qualification: -
Power Dissipation: 200mW
Transistor Mounting: Surface Mount
Transistor Polarity: NPN
Transition Frequency: 150MHz
Transistor Case Style: SC-70
DC Current Gain hFE Min: 120hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 500mA
Collector Emitter Voltage Max: 50V

Delivery and price
Units per pack	5000
Price	0.073 €
Current stock	500+
Lead time	30 days

Datasheet

## **DISCRETE SEMICONDUCTORS** 

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DATA SHEET<br>book, halfpage<br>M3D187<br>**----- End of picture text -----**<br>


## **2PD1820A** NPN general purpose transistor 

Supersedes data of 1997 May 22 

1999 Apr 12 

**Philips Semiconductors** 

**NPN general purpose transistor** 

**2PD1820A** 

## **FEATURES** 

- High current (max. 500 mA) 

- Low voltage (max. 50 V) 

- Low collector-emitter saturation voltage (max. 600 mV). 

## **PINNING** 

|**PINNING**||
|---|---|
|**PIN**|**DESCRIPTION**|
|1|base|
|2|emitter|
|3|collector|



## **APPLICATIONS** 

- General purpose switching and amplification, especially for portable equipment. 

## **DESCRIPTION** 

NPN transistor in an SC-70; SOT323 plastic package. PNP complement: 2PB1219A. 

## **MARKING** 

|**TYPE NUMBER**|**MARKING CODE**(1)|
|---|---|
|2PD1820AQ|A∗Q|
|2PD1820AR|A∗R|
|2PD1820AS|A∗S|



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handbook, halfpage 3<br>3<br>1<br>2<br>1 2<br>Top view MAM336<br>**----- End of picture text -----**<br>


## **Note** 

1. ∗ = - : Made in Hong Kong. 

   - ∗ = t : Made in Malaysia. 

Fig.1 Simplified outline (SC-70; SOT323) and symbol. 

## **LIMITING VALUES** 

In accordance with the Absolute Maximum Rating System (IEC 134). 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|VCBO|collector-base voltage|open emitter|−|60|V|
|VCEO|collector-emitter voltage|open base|−|50|V|
|VEBO|emitter-base voltage|open collector|−|5|V|
|IC|collector current (DC)||−|500|mA|
|ICM|peak collector current||−|1|A|
|IBM|peak base current||−|200|mA|
|Ptot|total power dissipation|Tamb≤25°C; note 1|−|200|mW|
|Tstg|storage temperature||−65|+150|°C|
|Tj|junction temperature||−|150|°C|
|Tamb|operating ambient temperature||−65|+150|°C|



## **Note** 

1. Transistor mounted on an FR4 printed-circuit board. 

1999 Apr 12 

2 

Philips Semiconductors 

## NPN general purpose transistor 

## 2PD1820A 

## **THERMAL CHARACTERISTICS** 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**|
|---|---|---|---|---|
|Rth j-a|thermal resistance from junction to ambient|note 1|625|K/W|



## **Note** 

1. Transistor mounted on an FR4 printed-circuit board. 

## **CHARACTERISTICS** 

Tamb = 25 ° 

|Tamb= 25°C|unless otherwise specifed.|||||
|---|---|---|---|---|---|
|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|ICBO|collector cut-off current|IE= 0; VCB= 20 V|−|10|nA|
|||IE= 0; VCB= 20 V; Tj= 150°C|−|5|µA|
|IEBO|emitter cut-off current|IC= 0; VEB= 4 V|−|10|nA|
|hFE|DC current gain<br>2PD1820AQ<br>2PD1820AR<br>2PD1820AS|IC = 150 mA; VCE= 10 V; note 1|85<br>120<br>170|170<br>240<br>340||
|hFE|DC current gain|IC = 500 mA; VCE= 10 V; note 1|40|−||
|VCEsat|collector-emitter saturation voltage|IC= 300 mA; IB= 30 mA; note 1|−|600|mV|
|Cc|collector capacitance|IE= ie= 0; VCB= 10 V; f = 1 MHz|−|15|pF|
|fT|transition frequency|IC= 50 mA; VCE= 10 V; f = 100 MHz;<br>note 1|150|−|MHz|



## **Note** 

1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 

1999 Apr 12 

3 

Philips Semiconductors 

## NPN general purpose transistor 

## 2PD1820A 

## **PACKAGE OUTLINE** 

## **Plastic surface mounted package; 3 leads** 

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SOT323<br>**----- End of picture text -----**<br>


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D B E A<br>X<br>y HE v M A<br>3<br>Q<br>A<br>A1<br>c<br>1 2<br>e1 bp w M B Lp<br>e detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A maxA1 bp c D E e e1 HE Lp Q v w<br>1.1 0.4 0.25 2.2 1.35 2.2 0.45 0.23<br>mm 0.1 1.3 0.65 0.2 0.2<br>0.8 0.3 0.10 1.8 1.15 2.0 0.15 0.13<br>OUTLINE  REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION  IEC  JEDEC  EIAJ PROJECTION<br> SOT323 SC-70 97-02-28<br>**----- End of picture text -----**<br>


1999 Apr 12 

4 

Philips Semiconductors 

## NPN general purpose transistor 

## 2PD1820A 

## **DEFINITIONS** 

|**DEFINITIONS**|**DEFINITIONS**|
|---|---|
|||
|**Data Sheet Status**||
|Objective specifcation|This data sheet contains target or goal specifcations for product development.|
|Preliminary specifcation|This data sheet contains preliminary data; supplementary data may be published later.|
|Product specifcation|This data sheet contains fnal product specifcations.|
|**Limiting values**||
|Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or<br>more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation<br>of the device at these or at any other conditions above those given in the Characteristics sections of the specifcation<br>is not implied. Exposure to limiting values for extended periods may affect device reliability.||
|**Application information**||
|Where application information is given, it is advisory and does not form part of the specifcation.||



## **Application information** 

## **LIFE SUPPORT APPLICATIONS** 

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 

1999 Apr 12 

5 

Philips Semiconductors 

NPN general purpose transistor 

2PD1820A 

## **NOTES** 

1999 Apr 12 

6 

Philips Semiconductors 

NPN general purpose transistor 

2PD1820A 

## **NOTES** 

1999 Apr 12 

7 

## **Philips Semiconductors – a worldwide company** 

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**For all other countries apply to:** Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 

## © Philips Electronics N.V. 1999 

**Internet:** http://www.semiconductors.philips.com 

SCA63 

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. 

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 

Printed in The Netherlands 

**==> picture [204 x 36] intentionally omitted <==**

Date of release: 1999 Apr 12 Document order number: 9397 750 05588 

115002/00/02/pp8

Updated at June 1, 2026

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