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2PB709ART,215
Bipolar (BJT) Single Transistor, PNP, 45 V, 100 mA, 250 mW, SOT-23, Surface Mount
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- Manufacturer: NEXPERIA
- Product type:
- Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:70MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:210hFE; T
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 250mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: PNP
- Transition Frequency: 70MHz
- Transistor Case Style: SOT-23
- DC Current Gain hFE Min: 210hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max: 45V
| Delivery and price | |
|---|---|
| Units per pack | 9000 |
| Price | 0.037 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**==> picture [49 x 49] intentionally omitted <==** ## **2PB709ART** ## **45 V, 100 mA PNP general-purpose transistor** **Rev. 01 — 19 March 2007** ## **Product data sheet** ## **1.** ## **1.1 General description** PNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: 2PD601ART. ## **1.2 Features** I General-purpose transistor I Small SMD plastic package ## **1.3 Applications** I ## **1.4 Quick reference data** ## **Table 1. Quick reference data** |**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |VCEO|collector-emitter voltage|open base|-|-|−45|V| |IC|collector current||-|-|−100|mA| |hFE|DC current gain|VCE=−10 V;|210|-|340|| |||IC=−2 mA||||| ## **2. Pinning information** |**Table**|**2.**|**Pinning**||||||| |---|---|---|---|---|---|---|---|---| |**Pin**||**Description**|**Simplifed outline**|||**Symbol**||| |1||base||||||| |2||emitter||3||||3| |3||collector||||1||| ||||1<br>2|||||| |||||||||2| ||||||||sym013|| **==> picture [211 x 101] intentionally omitted <==** **2PB709ART** **NXP Semiconductors** **45 V, 100 mA PNP general-purpose transistor** ## **3. Ordering information** ## **Table 3. Ordering information** |**Type number**|**Package**|**Package**|**Package**| |---|---|---|---| ||**Name**|**Description**|**Version**| |2PB709ART|-<br>plastic surface-mounted package; 3 leads<br>SOT23||| ## **4. Marking** ## **Table 4. Marking codes** |**Type number**|**Marking code**<br>**[1]**|**Marking code**<br>**[1]**| |---|---|---| |2PB709ART|C5*|| - [1] * = -: made in Hong Kong - = p: made in Hong Kong - = t: made in Malaysia - = W: made in China ## **5. Limiting values** ## **Table 5. Limiting values** In accordance with the Absolute Maximum Rating System (IEC 60134). |**Symbol**|**Parameter**|**Conditions**||**Min**|**Max**|**Unit**| |---|---|---|---|---|---|---| |VCBO|collector-base voltage|open emitter||-|−45|V| |VCEO|collector-emitter voltage|open base||-|−45|V| |VEBO|emitter-base voltage|open collector||-|−6|V| |IC|collector current|||-|−100|mA| |ICM|peak collector current|single pulse;||-|−200|mA| |||tp≤1 ms||||| |IBM|peak base current|single pulse;||-|−100|mA| |||tp≤1 ms||||| |Ptot|total power dissipation|Tamb≤25°C|[1]|-|250|mW| |Tj|junction temperature|||-|150|°C| |Tamb|ambient temperature|||−65|+150|°C| |Tstg|storage temperature|||−65|+150|°C| - [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. © NXP B.V. 2007. All rights reserved. 2PB709ART_1 **Product data sheet** **Rev. 01 — 19 March 2007** **2 of 10** **2PB709ART** **NXP Semiconductors** **45 V, 100 mA PNP general-purpose transistor** **==> picture [276 x 209] intentionally omitted <==** **----- Start of picture text -----**<br> 006aaa990<br>300<br>Ptot<br>(mW)<br>200<br>100<br>0<br>−75 −25 25 75 125 175<br>Tamb (°C)<br>FR4 PCB, standard footprint<br>**----- End of picture text -----**<br> **Fig 1. Power derating curve** ## **6. Thermal characteristics** |**Table 6.**|**Thermal characteristics**||||||| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**| |Rth(j-a)|thermal resistance from|in free air|[1]|-|-|500|K/W| ||junction to ambient||||||| |Rth(j-sp)|thermal resistance from|||-|-|140|K/W| ||junction to solder point||||||| [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. © NXP B.V. 2007. All rights reserved. 2PB709ART_1 **Product data sheet** **Rev. 01 — 19 March 2007** **3 of 10** **2PB709ART** **NXP Semiconductors** ## **45 V, 100 mA PNP general-purpose transistor** **==> picture [481 x 209] intentionally omitted <==** **----- Start of picture text -----**<br> 006aaa991<br>10 [3]<br>δ = 1<br>Zth(j-a) 0.75<br>(K/W) 0.50<br>0.33<br>10 [2] 0.20<br>0.10<br>0.05<br>0.02<br>10<br>0.01<br>0<br>1<br>10 [−][5] 10 [−][4] 10 [−][3] 10 [−][2] 10 [−][1] 1 10 10 [2] 10 [3]<br>tp (s)<br>FR4 PCB, standard footprint<br>**----- End of picture text -----**<br> **Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23 (TO-236AB); typical values** ## **7. Characteristics** ## **Table 7. Characteristics** Tamb = 25 ° |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---| |ICBO<br>collector-base cut-off<br>current|VCB=−45 V; IE= 0 A<br>-<br>-<br>−10<br>nA| ||VCB=−45 V; IE= 0 A;<br>Tj= 150°C<br>-<br>-<br>−5<br>µA| |IEBO<br>emitter-base cut-off<br>current|VEB=−5 V; IC= 0 A<br>-<br>-<br>−10<br>nA| |hFE<br>DC current gain|VCE=−10 V;<br>IC=−2 mA<br>210<br>-<br>340| |VCEsat<br>collector-emitter<br>saturation voltage|IC=−100 mA;<br>IB=−10 mA<br>[1] -<br>-<br>−500<br>mV| |fT<br>transition frequency|VCE=−10 V;<br>IC=−1 mA;<br>f = 100 MHz<br>70<br>-<br>-<br>MHz| |Cc<br>collector capacitance|VCB=−10 V;<br>IE= ie= 0 A;<br>f = 1 MHz<br>-<br>-<br>5<br>pF| [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. © NXP B.V. 2007. All rights reserved. 2PB709ART_1 **Product data sheet** **Rev. 01 — 19 March 2007** **4 of 10** **2PB709ART** **NXP Semiconductors** **45 V, 100 mA PNP general-purpose transistor** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 006aab028<br>500<br>hFE (1)<br>400<br>300<br>(2)<br>200<br>(3)<br>100<br>0<br>−10 [−][1] −1 −10 −10 [2]<br>IC (mA)<br>**----- End of picture text -----**<br> VCE = −10 V **==> picture [233 x 209] intentionally omitted <==** **----- Start of picture text -----**<br> −0.1 006aab029<br>IC IB (mA) = −0.75 −0.7<br>−(A)0.08 −0.65 −0.6<br>−0.55 −0.5<br>−0.45<br>−0.4<br>−0.06<br>−0.35<br>−0.3<br>−0.25<br>−0.04 −0.2<br>−0.15<br>−0.1<br>−0.02<br>−0.05<br>0<br>0 −2 −4 −6 −8 −10<br>VCE (V)<br>Tamb = 25 °C<br>**----- End of picture text -----**<br> - (1) Tamb = 150 °C - (2) Tamb = 25 °C (3) Tamb = −55 °C **Fig 3. DC current gain as a function of collector current; typical values** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> −1.3 006aab030<br>VBEsat<br>(V)<br>−0.9<br>(1)<br>(2)<br>−0.5 (3)<br>−0.1<br>−10 [−][1] −1 −10 −10 [2]<br>IC (mA)<br>**----- End of picture text -----**<br> IC/IB = 10 - (1) Tamb = −55 °C - (2) Tamb = 25 °C (3) Tamb = 150 °C **Fig 5. Base-emitter saturation voltage as a function of collector current; typical values** **Fig 4. Collector current as a function of collector-emitter voltage; typical values** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> −1 006aab031<br>VCEsat<br>(V)<br>−10 [−][1]<br>(1)<br>(2)<br>(3)<br>−10 [−][2]<br>−10 [−][1] −1 −10 −10 [2]<br>IC (mA)<br>**----- End of picture text -----**<br> IC/IB = 10 - (1) Tamb = 150 °C - (2) Tamb = 25 °C - (3) Tamb = −55 °C - **Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values** © NXP B.V. 2007. All rights reserved. 2PB709ART_1 **Product data sheet** **Rev. 01 — 19 March 2007** **5 of 10** **2PB709ART** **NXP Semiconductors** **45 V, 100 mA PNP general-purpose transistor** ## **8. Package outline** **==> picture [237 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0 1.1<br>2.8 0.9<br>3<br>0.45<br>0.15<br>2.5 1.4<br>2.1 1.2<br>1 2<br>0.48 0.15<br>0.38 0.09<br>1.9<br>Dimensions in mm 04-11-04<br>**----- End of picture text -----**<br> **Fig 7. Package outline SOT23 (TO-236AB)** ## **9. Packing information** **Table 8. Packing methods** The indicated -xxx are the last three digits of the 12NC ordering code ~~.~~ [1] |**Type number**<br>**Package**<br>**Description**|**Packing quantity**<br>**3000**<br>**10000**|**Packing quantity**<br>**3000**<br>**10000**| |---|---|---| |||**10000**| |2PB709ART<br>SOT23<br>4 mm pitch, 8 mm tape and reel|-215<br>-235|| [1] For further information and the availability of packing methods, see Section 13. © NXP B.V. 2007. All rights reserved. 2PB709ART_1 **Product data sheet** **Rev. 01 — 19 March 2007** **6 of 10** **2PB709ART** **NXP Semiconductors** **45 V, 100 mA PNP general-purpose transistor** ## **10. Soldering** **==> picture [303 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 2.90<br>2.50<br>0.85 2 1<br>solder lands<br>3.00 1.30 2.70 solder resist<br>0.85 3 solder paste<br>occupied area<br>0.60<br>Dimensions in mm<br>(3x)<br>0.50 (3x)<br>0.60 (3x)<br>1.00<br>3.30 sot023<br>**----- End of picture text -----**<br> **Fig 8.** **==> picture [327 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> 3.40<br>1.20 (2x)<br>solder lands<br>solder resist<br>occupied area<br>2 1<br>4.60 4.00 1.20<br>3<br>Dimensions in mm<br>preferred transport direction during soldering<br>2.80<br>4.50 sot023<br>**----- End of picture text -----**<br> **Fig 9. Wave soldering footprint SOT23 (TO-236AB)** © NXP B.V. 2007. All rights reserved. 2PB709ART_1 **Product data sheet** **Rev. 01 — 19 March 2007** **7 of 10** **2PB709ART** **NXP Semiconductors** **45 V, 100 mA PNP general-purpose transistor** ## **11. Revision history** |**Table 9.**|**Revision**|**history**|||| |---|---|---|---|---|---| |**Document**|**ID**|**Release date**|**Data sheet status**|**Change notice**|**Supersedes**| |2PB709ART_1||20070319|Product data sheet|-|-| © NXP B.V. 2007. All rights reserved. 2PB709ART_1 **Product data sheet** **Rev. 01 — 19 March 2007** **8 of 10** **2PB709ART** **NXP Semiconductors** **45 V, 100 mA PNP general-purpose transistor** ## **12. Legal information** ## **12.1 Data sheet status** |**Document statu**|**s**<br>**[1]**<br>**[2]**<br>**Product status**<br>**[3]**<br>**Defnition**| |---|---| |Objective [short] data sheet<br>Development<br>This document contains data from the objective specifcation for product development.|| |Preliminary [short] data sheet<br>Qualifcation<br>This document contains data from the preliminary specifcation.|| |Product [short] data sheet<br>Production<br>This document contains the product specifcation.|| [1] Please consult the most recently issued document before initiating or completing a design. [2] [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. ## **12.2** **Draft —** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Short data sheet —** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. ## **12.3 Disclaimers** **General —** Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. **Right to make changes —** NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Suitability for use —** NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. **Applications —** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. **Limiting values —** the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. **Terms and conditions of sale —** NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. **No offer to sell or license —** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. ## **12.4 Trademarks** Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. ## **13. Contact information** For additional information, please visit: **http://www.nxp.com** **salesaddresses@nxp.com** © NXP B.V. 2007. All rights reserved. 2PB709ART_1 **Product data sheet** **Rev. 01 — 19 March 2007** **9 of 10** **2PB709ART** **NXP Semiconductors** **45 V, 100 mA PNP general-purpose transistor** ## **14. Contents** |**1**|**Product profle . . . . . . . . . . . . . . . . . . . . . . . . . . 1**| |---|---| |1.1|General description. . . . . . . . . . . . . . . . . . . . . . 1| |1.2|Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.4|Quick reference data. . . . . . . . . . . . . . . . . . . . . 1| |**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . 1**| |**3**|**Ordering information . . . . . . . . . . . . . . . . . . . . . 2**| |**4**|**Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2**| |**5**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2**| |**6**|**Thermal characteristics. . . . . . . . . . . . . . . . . . . 3**| |**7**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4**| |**8**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6**| |**9**|**Packing information. . . . . . . . . . . . . . . . . . . . . . 6**| |**10**|**Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7**| |**11**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8**| |**12**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9**| |12.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9| |12.2|Defnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9| |12.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9| |12.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9| |**13**|**Contact information. . . . . . . . . . . . . . . . . . . . . . 9**| |**14**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**| **==> picture [151 x 121] intentionally omitted <==** Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. **© NXP B.V. 2007.** **All rights reserved.** For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 19 March 2007 Document identifier: 2PB709ART_1**
Updated at June 1, 2026
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
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