2PA1774QM,315

Bipolar (BJT) Single Transistor, PNP, 40 V, 100 mA, 430 mW, DFN1006, Surface Mount

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Manufacturer: NEXPERIA
Product type:
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Product Range: 2PA1774M
Qualification: -
Power Dissipation: 430mW
Transistor Mounting: Surface Mount
Transistor Polarity: PNP
Transition Frequency: 100MHz
Transistor Case Style: DFN1006
DC Current Gain hFE Min: 120hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 100mA
Collector Emitter Voltage Max: 40V

Delivery and price
Units per pack	5000
Price	0.116 €
Current stock	10+
Lead time	30 days

Datasheet

## **DISCRETE SEMICONDUCTORS** 

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DATA SHEET<br>M3D883<br>BOTTOM VIEW<br>**----- End of picture text -----**<br>


**2PA1774M series** PNP general purpose transistor 

2004 Feb 19 

**Philips Semiconductors** 

## **PNP general purpose transistor** 

## **2PA1774M series** 

## **FEATURES** 

- Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) 

- Board space 1.3 mm × 0.9 mm 

- Power dissipation comparable to SOT23. 

## **APPLICATIONS** 

- General purpose small signal DC 

- Low and medium frequency AC applications 

- Mobile communications, digital (still) cameras, PDAs, PCMCIA cards. 

## **DESCRIPTION** 

PNP general purpose transistor in a SOT883 leadless ultra small plastic package. 

NPN complement: 2PC4617M series. 

## **MARKING** 

|**MARKING**||
|---|---|
|**TYPE NUMBER**|**MARKING CODE**|
|2PA1774QM|PB|
|2PA1774RM|PA|
|2PA1774SM|PC|



## **QUICK REFERENCE DATA** 

|**SYMBOL**|**PARAMETER**|**MAX.**|**UNIT**|
|---|---|---|---|
|VCEO|collector-emitter voltage|−40|V|
|IC|collector current (DC)|−100|mA|
|ICM|peak collector current|−200|mA|



## **PINNING** 

|**PINNING**||
|---|---|
|**PIN**|**DESCRIPTION**|
|1|base|
|2|emitter|
|3|collector|



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3<br>handbook, halfpage 2<br>3 1<br>1<br>2<br>Bottom view MAM469<br>Fig.1  Simplified outline (SOT883) and symbol.<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**TYPE**<br>**NUMBER**|**PACKAGE**|**PACKAGE**|**PACKAGE**|
|---|---|---|---|
||**NAME**|**DESCRIPTION**|**VERSION**|
|2PA1774QM<br>2PA1774RM<br>2PA1774SM|−<br>−<br>−|leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm|SOT883|



2004 Feb 19 

2 

Philips Semiconductors 

## PNP general purpose transistor 

## 2PA1774M series 

## **LIMITING VALUES** 

In accordance with the Absolute Maximum System (IEC 60134). 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|VCBO|collector-base voltage|open emitter|−|−50|V|
|VCEO|collector-emitter voltage|open base|−|−40|V|
|VEBO|emitter-base voltage|open collector|−|−5|V|
|IC|collector current (DC)||−|−100|mA|
|ICM|peak collector current||−|−200|mA|
|IBM|peak base current||−|−100|mA|
|Ptot|total power dissipation|Tamb≤25°C<br>note 1<br>note 2|−<br>−|250<br>430|mW<br>mW|
|Tstg|storage temperature||−65|+150|°C|
|Tj|junction temperature||−|150|°C|
|Tamb|operating ambient temperature||−65|+150|°C|



## **Notes** 

1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper strip line. 

2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm[2] . 

## **THERMAL CHARACTERISTICS** 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**|
|---|---|---|---|---|
|Rth(j-a)|thermal resistance from junction to ambient|in free air<br>note 1<br>note 2|500<br>290|K/W<br>K/W|



## **Notes** 

1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper strip line. 

2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm[2] . 

2004 Feb 19 

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Philips Semiconductors 

## PNP general purpose transistor 

## 2PA1774M series 

## **CHARACTERISTICS** 

Tamb = 25 ° 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|ICBO|collector-base cut-off current|VCB=−30 V; IE= 0<br>VCB=−30 V; IE= 0; Tj= 150°C|−<br>−|100|nA|
||||−<br>−|5|µA|
|IEBO|emitter-base cut-off current|VEB=−4 V; IC= 0|−<br>−|100|nA|
|hFE|DC current gain<br>2PA1774QM<br>2PA1774RM<br>2PA1774SM|VCE=−6 V; IC=−1 mA|120<br>2<br>180<br>3<br>270<br>5|70<br>90<br>60||
|VCEsat|collector-emitter saturation voltage|IC=−50 mA; IB=−5 mA; note 1|−<br>−|200|mV|
|Cc|collector capacitance|IE= ie= 0; VCB=−12 V; f = 1 MHz|−<br>2|.2|pF|
|fT|transition frequency|VCE=−12 V; IC=−2 mA;<br>f = 100 MHz|100<br>−||MHz|



## **Note** 

## 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 

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10 [3] MDB663 −1200 MDB664<br>handbook, halfpage handbook, halfpage<br>VBE<br>(1) (mV)<br>−1000<br>hFE (2)<br>(1)<br>(3) −800<br>10 [2] (2)<br>−600<br>−400 (3)<br>10 −200<br>−10 [−][1] −1 −10 −10 [2] −10 [3] −10 [−][1] −1 −10 −10 [2] −10 [3]<br>IC (mA) IC (mA)<br>VCE = −6 V.<br>VCE = −6 V. (1) Tamb = −55 °C.<br>(1) Tamb = 150 °C. (2) Tamb = 25 °C.<br>(2) Tamb = 25 °C. (3) Tamb = 150 °C.<br>(3) Tamb = −55 °C.<br>Fig.3 Base-emitter voltage as a function of<br>Fig.2  DC current gain; typical values. collector current; typical values.<br>**----- End of picture text -----**<br>


2004 Feb 19 

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Philips Semiconductors 

## PNP general purpose transistor 

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MDB665<br>−10 [3]<br>handbook, halfpage<br>VCEsat<br>(mV)<br>−10 [2]<br>(1)<br>(2)<br>(3)<br>−10<br>−10 [−][1] −1 −10 −10 [2] −10 [3]<br>IC (mA)<br>IC/IB = 10.<br>(1) Tamb = 150 °C.<br>(2) Tamb = 25 °C.<br>(3) Tamb = −55 °C.<br>**----- End of picture text -----**<br>


Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. 

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MDB667<br>−0.2<br>handbook, halfpage<br>IC (1)<br>(2)<br>(A) (3)<br>−0.16 (4)<br>(5)<br>(6)<br>(7)<br>−0.12<br>(8)<br>(9)<br>−0.08<br>(10)<br>−0.04<br>0<br>0 −2 −4 −6 −8 −10<br>VCE (V)<br>(1) IB = −2.7 mA. (5) IB = −1.62 mA. (9) IB = −0.54 mA.<br>(2) IB = −2.43 mA. (6) IB = −1.35 mA. (10) IB = −0.27 mA.<br>(3) IB = −2.16 mA. (7) IB = −1.08 mA.<br>(4) IB = −1.89 mA. (8) IB = −0.81 mA.<br>**----- End of picture text -----**<br>


Fig.6 Collector current as a function of collector-emitter voltage; typical values. 

## 2PA1774M series 

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−1200 MDB666<br>handbook, halfpage<br>VBEsat<br>(mV)<br>−1000<br>(1)<br>−800<br>(2)<br>−600<br>(3)<br>−400<br>−200<br>−10 [−][1] −1 −10 −10 [2]<br>IC (mA)<br>**----- End of picture text -----**<br>


IC/IB = 10. (1) Tamb = −55 °C. 

- (2) Tamb = 25 °C. 

- (3) Tamb = 150 °C. 

Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 

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MDB668<br>10 [3]<br>RCEsat<br>(Ω)<br>10 [2]<br>10 (1)<br>(2)<br>(3)<br>1<br>−10 [−][1] −1 −10 −10 [2] −10 [3]<br>IC (mA)<br>IC/IB = 10.<br>(1) Tamb = 150 °C.<br>(2) Tamb = 25 °C.<br>**----- End of picture text -----**<br>


- (3) Tamb = −55 °C. 

Fig.7 Collector-emitter equivalent on-resistance as a function of collector current; typical values. 

2004 Feb 19 

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Philips Semiconductors 

## PNP general purpose transistor 

## 2PA1774M series 

## **PACKAGE OUTLINE** 

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Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT883<br>L L1<br>2<br>b<br>3<br>e b1<br>1<br>e1<br>A<br>A1<br>E<br>D<br>0 0.5 1 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A [(1)] max.A1 b b1 D E e e1 L L1<br>0.50 0.20 0.55 0.62 1.02 0.30 0.30<br>mm 0.03 0.35 0.65<br>0.46 0.12 0.47 0.55 0.95 0.22 0.22<br>Note<br>1. Including plating thickness<br>OUTLINE  REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION  IEC  JEDEC  JEITA PROJECTION<br>03-02-05<br> SOT883 SC-101<br>03-04-03<br>**----- End of picture text -----**<br>


2004 Feb 19 

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Philips Semiconductors 

## PNP general purpose transistor 

## 2PA1774M series 

## **DATA SHEET STATUS** 

|**LEVEL**|**DATA SHEET**<br>**STATUS**(1)|**PRODUCT**<br>**STATUS**(2)(3)|**DEFINITION**|
|---|---|---|---|
|I|Objective data|Development|This data sheet contains data from the objective specifcation for product<br>development. Philips Semiconductors reserves the right to change the<br>specifcation in any manner without notice.|
|II|Preliminary data|Qualifcation|This data sheet contains data from the preliminary specifcation.<br>Supplementary data will be published at a later date. Philips<br>Semiconductors reserves the right to change the specifcation without<br>notice, in order to improve the design and supply the best possible<br>product.|
|III|Product data|Production|This data sheet contains data from the product specifcation. Philips<br>Semiconductors reserves the right to make changes at any time in order<br>to improve the design, manufacturing and supply. Relevant changes will<br>be communicated via a Customer Product/Process Change Notifcation<br>(CPCN).|



## **Notes** 

1. Please consult the most recently issued data sheet before initiating or completing a design. 

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 

## **DEFINITIONS** 

**Short-form specification**  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. 

**Limiting values definition**  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. 

**Application information**  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 

## **DISCLAIMERS** 

**Life support applications**  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. 

**Right to make changes**  Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 

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## **Philips Semiconductors – a worldwide company** 

## **Contact information** 

For additional information please visit **http://www.semiconductors.philips.com** . Fax: **+31 40 27 24825** For sales offices addresses send e-mail to: **sales.addresses@www.semiconductors.philips.com** . 

> © Koninklijke Philips Electronics N.V. 2004 

SCA76 

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 

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Printed in The Netherlands 

R75/01/pp8 Date of release: 2004 Feb 19 Document order number: 9397 750 11698

Updated at June 1, 2026

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