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2N7638-GA
SIC JUNCTION TRANSISTOR, 650V, 8A, TO-276-3
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- Manufacturer: GENESIC SEMICONDUCTOR
- Product type: JFETs
- No. of Pins: 3 Pin
- Channel Type: N Channel
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-276
- Operating Temperature Max: 250°C
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 224.1 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## ~~@cereSiG~~ **Normally – OFF Silicon Carbide Junction Transistor** **2N7638-GA** ~~@cereSiG ss~~ **Normally – OFF Silicon Carbide VDS = 600 V Junction Transistor RDS(ON) = 170 mΩ ID (Tc = 25°C) = 20 A** ~~——~~ **hFE (Tc = 25°C) = 110 Features Package** • 210°C maximum operating temperature 210°C maximum operating temperature • RoHS Compliant • Electrically Isolated Base Plate Electrically Isolated Base Plate •• Gate Oxide Free SiC Switch Exceptional Safe Operating Area S D • Excellent Gain Linearity G G • Compatible with 5 V TTL Gate Drive D • Temperature Independent Switching Performance •• Low Output Capacitance Positive Temperature Coefficient of RDS,ON ~~%~~ S • Suitable for Connecting an Anti-parallel Diode Suitable for Connecting an Anti-parallel Diode **SMD0.5 / TO – 276 (Hermetic Package) Advantages ges es Applications** • Compatible with Si MOSFET/IGBT Gate Drive ICs Compatible with Si MOSFET/IGBT Gate Drive ICs • Down Hole Oil Drilling ~~«~~ ## **Features** - 210°C maximum operating temperature 210°C maximum operating temperature - Electrically Isolated Base Plate Electrically Isolated Base Plate - Suitable for Connecting an Anti-parallel Diode Suitable for Connecting an Anti-parallel Diode ## **Advantages ges es** - Compatible with Si MOSFET/IGBT Gate Drive ICs Compatible with Si MOSFET/IGBT Gate Drive ICs - > 20 µs Short-Circuit Withstand Capability • Geothermal Instrumentation - Lowest-in-class Conduction Losses - Solenoid Actuators - High Circuit Efficiency - General Purpose High-Temperature Switching - Minimal Input Signal Distortion - Amplifiers - High Amplifier Bandwidth - Solar Inverters - Switched-Mode Power Supply (SMPS) - Power Factor Correction (PFC) ## **Table of Contents** **Section I: Absolute Maximum Ratings ...........................................................................................................1 Section II: Static Electrical Characteristics ....................................................................................................2 Section III: Dynamic Electrical Characteristics .............................................................................................2 Section IV: Figures ...........................................................................................................................................3** **Section V: Driving the 2N7638-GA ..................................................................................................................5 Section VI: Package Dimensions: ...................................................................................................................8 Section VII: SPICE Model Parameters ............................................................................................................9** ## **Section I: Absolute Maximum Ratings** |**Section I: Absolute Maximum Ratings**|**Section I: Absolute Maximum Ratings**|||| |---|---|---|---|---| |**Parameter**|**Symbol**|**Conditions**|**Values**|**Unit**| |Drain –SourceVoltage|VDS|VGS= 0 V|600|V| |ContinuousDrainCurrent|ID|TJ= 210°C,TC= 25°C|20|A| |Continuous Gate Current|IGM||1.25|A| |Turn-Off Safe Operating Area|RBSOA|TVJ= 210°C, IG= 1.25 A,<br>Clamped Inductive Load|ID,max= 20<br>@VDS ≤ VDSmax|A| |Short Circuit Safe Operating Area|SCSOA|TVJ= 210°C, IG= 1.25 A, VDS= 400 V,<br>Non Repetitive|>20|µs| |Reverse Gate–SourceVoltage|VGS||30|V| |ReverseDrain –SourceVoltage|VDS||40|V| |Power Dissipation|Ptot|TJ= 210°C, TC= 25°C|200|W| |Operatingand Storage Temperature|Tj,Tstg||-55 to 210|°C| Pg **1** of 8 Dec 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/ ## **2N7638-GA** ## **Section II: Static Electrical Characteristics** |**Section II: Static Electrical Characteristics**|||| |---|---|---|---| |**Parameter**<br>**Symbol**<br>**Conditions**||**Values**|**Unit**<br>**max.**| ||**min.**|**typ. **|| |**A: On State**|||| |Drain – Source On Resistance<br>RDS(ON)<br>ID= 7 A, Tj= 25 °C<br>ID= 7 A, Tj= 175 °C<br>ID= 7 A,Tj= 210 °C||170<br>320<br>440|mΩ<br>V| |Gate – Source Saturation Voltage<br>VGS,SAT<br>ID= 10 A, ID/IG= 40, Tj= 25 °C<br>ID= 10 A, ID/IG= 30, Tj= 175 °C||3.50<br>3.27|| |DC Current Gain<br>hFE<br>VDS= 5 V, ID= 10 A, Tj= 25 °C<br>VDS= 5 V,ID= 10 A,Tj= 210 °C|80<br>50|110<br>80|| |**B: Off State**|||100<br>µA<br>400<br>600<br>°C/W| |Drain Leakage Current<br>IDSS<br>VR= 600 V, VGS= 0 V, Tj= 25 °C<br>VR= 600 V, VGS= 0 V, Tj= 175 °C<br>VR= 600 V,VGS= 0 V,Tj= 210 °C||10<br>40<br>100|100<br>µA<br>400<br>600| |**C:Thermal**|||| |Thermal resistance, junction -case<br>RthJC||1.0|| ## **Section III: Dynamic Electrical Characteristics** |**Section III: Dynamic Electrical Characteristics**|||| |---|---|---|---| |**Pt**<br>**Sbl**<br>**Cditi**||**Values**|**Uit**| |**arameer**<br>**ymo**<br>**onons**|**min.**|**typ. **|**n**<br>**max.**| |**A: Capacitance and Gate Charge**|||| |Input Capacitance<br>Ciss<br>VGS= 0 V,VD= 500 V, _f_= 1 MHz||685|pF| |ReverseTransfer/Output Capacitance<br>Crss/Coss<br>VD= 500 V, _f_= 1 MHz||24|pF| |Output Capacitance StoredEnergy<br>EOSS<br>VGS= 0 V,VD= 500 V, _f_= 1 MHz||3.1|µJ| |Effective Output Capacitance,<br>timerelated<br>Coss,tr<br>ID= constant, VGS= 0 V, VDS=<br>0…400 V||50|pF| |Effective Output Capacitance,<br>energyrelated<br>Coss,er<br>VGS= 0 V, VDS= 0…400 V||37|pF| |Gate-Source Charge<br>QGS<br>VGS= -5…3 V||11|nC| |Gate-DrainCharge<br>QGD<br>VGS= 0 V,VDS= 0…400 V||20|nC| |Gate Charge - Total<br>QG||31|nC| ## **B: Switching** |TurnOn DelayTime<br>td(on)|Tj= 175 ºC, VDS= 400 V,<br>~~I~~D= 7 A, Inductive Load<br>Refer to Section V for additional<br>driving information.||10|ns| |---|---|---|---|---| |RiseTime<br>tr|||30|ns| |TurnOff DelayTime<br>td(off)|||75|ns| |Fall Time<br>tf|||40|ns| |Turn-On EnergyPer Pulse<br>Eon|||35|µJ| |Turn-Off EnergyPer Pulse<br>Eoff|||65|µJ| |TotalSwitchingEnergy<br>Ets|||100|µJ| |TurnOn DelayTime<br>td(on)|~~T~~j= 210 ºC, VDS= 400 V,<br>~~I~~D= 7 A, Inductive Load<br>Refer to Section V for additional<br>driving information.||10|ns| |Rise Time<br>tr|||30|ns| |Turn Off DelayTime<br>td(off)|||75|ns| |Fall Time<br>tf|||60|ns| |Turn-On EnergyPer Pulse<br>Eon|||45|µJ| |Turn-Off EnergyPer Pulse<br>Eoff|||80|µJ| |TotalSwitchingEnergy<br>Ets|||125|µJ| Pg **2** of 8 Dec 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/ **2N7638-GA** ## **Section IV: Figures** ## **A: Static Characteristics** **Figure 1: Typical Output Characteristics at 25 °C** **Figure 3: Typical Output Characteristics at 210 °C** **Figure 5: Normalized On-Resistance and Current Gain vs. Temperature** **Figure 2: Typical Output Characteristics at 175 °C** **Figure 4: Typical Gate – Source Saturation Voltage** **Figure 6: Typical Blocking Characteristics** Pg **3** of 8 Dec 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/ **2N7638-GA** ## **B: Dynamic Characteristics** **Figure 7: Capacitance Characteristics** **Figure 9: Typical Turn On Energy Losses and Switching Times vs. Temperature** **Figure 8: Output Capacitance Stored Energy** **Figure 10: Typical Turn Off Energy Losses and Switching Times vs. Temperature** Pg **4** of 8 Dec 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/ **2N7638-GA** ## **Section V: Driving the 2N7638-GA** The 2N7638-GA is a current controlled SiC transistor which requires a positive gate current for turn-on and to remain in on-state. It may be driven by different drive topologies depending on the intended application. **Table 1: Estimated Power Consumption and switching frequencies for various Gate Drive topologies.** |**Drive Topology**|**Gate Drive Power**<br>**Consumption**|**Switching**<br>**Frequency**| |---|---|---| |Simple TTL|High|Low| |Constant Current|Medium|Medium| |High Speed – Boost Capacitor|Medium|High| |High Speed – Boost Inductor|Low|High| |Proportional|Lowest|Medium| |Pulsed Power|Medium|N/A| ## **A: Simple TTL Drive** The 2N7638-GA may be driven by 5 V TTL logic using a simple current amplification stage. The current amplifier output current must meet or exceed the steady state gate current, IG,steady, required to operate the 2N7638-GA. An external gate resistor RG, shown in the Figure 11 topology, sets IG,steady to the required level which is dependent on the SJT drain current ID and DC current gain hFE, RG may be calculated from the equation below. The value of VEC,sat can be taken from the PNP datasheet, a partial list of high-temperature PNP and NPN transistors options is given below. High-temperature MOSFETs may also be used in the topology. **==> picture [202 x 23] intentionally omitted <==** **----- Start of picture text -----**<br> 𝑅𝑅𝐺𝐺,𝑚 𝑚𝑚 = [�][5.0 𝑉𝑉−𝑉𝑉][𝐸] [,𝑠𝑠𝑚𝑚𝑠𝑠] [(𝑃] [𝑃𝑃) −𝑉𝑉] 𝐼𝐼𝐷𝐷 ∗1.5 [𝐺] [,𝑠𝑠𝑚𝑚𝑠𝑠] [(𝐺𝐺𝑆] [)][�] [∗ℎ][𝐹𝐹𝐸𝐸][(𝑆𝑆, 𝐼𝐼][𝐷𝐷][)]<br>**----- End of picture text -----**<br> **==> picture [215 x 98] intentionally omitted <==** **----- Start of picture text -----**<br> Inverting 5 V<br>Current<br>Boost<br>Stage<br>TTL PNP SiC SJT D<br>Gate Signal<br>IG,steady G<br>TTL i/p0 / 5 V TTL o/p0 / 5 V RG<br>inverted S<br>NPN<br>**----- End of picture text -----**<br> **Figure 11: Simple TTL Gate Drive Topology** **Table 2: Partial List of High-Temperature BJTs for TTL Gate Driving** |**BJT Part Number**|**Type**|**Tj,max (°C)**| |---|---|---| |PHPT60603PY|PNP|175| |PHPT60603NY|NPN|175| |2N2222|NPN|200| |2N6730|PNP|200| |2N2905|PNP|200| |2N5883|PNP|200| |2N5885|NPN|200| Pg **5** of 8 Dec 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/ **2N7638-GA** ## **B: High Speed Driving** For ultra high speed 2N7638-GA switching ( _tr_ , _tf_ < 20 ns) while maintaining low gate drive losses the supplied gate current should include a positive current peak during turn-on, a negative voltage peak during turn-off, and continuous gate current IG to remain on. An SJT is rapidly switched from its blocking state to on-state, when the necessary gate charge for turn-on, QG, is supplied by a burst of high gate current until the gate-source capacitance, CGS, and gate-drain capacitance, CGD, are fully charged. Ideally, the burst should terminate when the drain voltage has fallen to its on-state value in order to avoid unnecessary drive losses. A negative voltage peak is recommended for the turn-off transition in order to ensure that the gate current is not being supplied under high dV/dt due to the Miller effect. While satisfactory turn off can be achieved with VGS = 0 V, a negative VGS value may be used in order to speed up the turn-off transition. ## **B:1: High Speed, Low Loss Drive with Boost Capacitor** The 2N7638-GA may be driven using a High Speed, Low Loss Drive with Boost Capacitor topology in which multiple voltage levels, a gate resistor, and a gate capacitor are used to provide current peaks at turn-on and turn-off for fast switching and a continuous gate current while in on-state. As shown in Figure 12, in this topology two gate driver ICs are utilized. An external gate resistor RG is driven by a low voltage driver to supply the continuous gate current throughout on-state.and a gate capacitor CG is driven at a higher voltage level to supply a high current peak at turn-on and turn-off. A 3 kV isolated evaluation gate drive board (GA03IDDJT30-FR4) from GeneSiC Semiconductor utilizing this topology is commercially available for high and low-side driving, its datasheet provides additional details about this drive topology. **==> picture [302 x 124] intentionally omitted <==** **----- Start of picture text -----**<br> VGH<br>Gate Signal CG D<br>IG G<br>VGL<br>Gate<br>S<br>SiC SJT<br>RG<br>**----- End of picture text -----**<br> **Figure 12: High Speed, Low Loss Drive with Boost Capacitor Topology** ## **B:2: High Speed, Low Loss Drive with Boost Inductor** A High Speed, Low-Loss Driver with Boost Inductor is also capable of driving the 2N7638-GA at high-speed. It utilizes a gate drive inductor instead of a capacitor to provide the high-current gate current pulses IG,on and IG,off. During operation, inductor L is charged to a specified IG,on current value then made to discharge IL into the SJT gate pin using logic control of S1, S2, S3, and S4, as shown in Figure 13. After turn on, while the device remains on the necessary steady state gate current I _G,steady_ is supplied from source VCC through RG. Please refer to the article “A current-source concept for fast and efficient driving of silicon carbide transistors” by Dr. Jacek Rąbkowski for additional information on this driving topology.[3] **==> picture [133 x 160] intentionally omitted <==** **----- Start of picture text -----**<br> VCC<br>S1<br>VCC<br>S2<br>L<br>VEE<br>S3 SiC SJT D<br>G<br>RG<br>S4 S<br>VEE<br>**----- End of picture text -----**<br> **Figure 13: High Speed, Low-Loss Driver with Boost Inductor Topology** 3 – Archives of Electrical Engineering. Volume 62, Issue 2, Pages 333–343, ISSN (Print) 0004-0746, DOI: 10.2478/aee-2013-0026, June 2013 Pg **6** of 8 Dec 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/ **2N7638-GA** ## **C: Proportional Gate Current Driving** A proportional gate drive topology may be beneficial for applications in which the 2N7638-GA will operate over a wide range of drain current conditions to lower the gate drive power consumption. A proportional gate driver relies on instantaneous drain current ID feedback to vary the steady state gate current IG,steady supplied to the 2N7638-GA. ## **C:1: Voltage Controlled Proportional Driver** A voltage controlled proportional driver relies on a gate drive integrated circuit to detect the 2N7638-GA drain-source voltage VDS during onstate to sense ID. The integrated circuit will then increase or decrease IG in response to ID. This allows IG and gate drive power consumption to reduce while ID is low or for IG to increase when ID increases. A high voltage diode connected between the drain and sense protects the integrated circuit from high-voltage when blocking. A simplified version of this topology is shown in Figure 14. Additional information will be available in the future at http://www.genesicsemi.com/references/product-notes/. **==> picture [285 x 134] intentionally omitted <==** **----- Start of picture text -----**<br> HV Diode<br>Sense<br>Proportional<br>D<br>Gate Signal Gate Current<br>Driver G<br>Signal Output IG,steady<br>S<br>SiC SJT<br>**----- End of picture text -----**<br> **Figure 14: Simplified Voltage Controlled Proportional Driver** ## **C:2: Current Controlled Proportional Driver** The current controlled proportional driver relies on a low-loss transformer in the drain or source path to provide feedback of the 2N7638-GA drain current during on-state to supply IG,steady into the gate. IG,steady will increase or decrease in response to ID at a fixed forced current gain which is set be the turns ratio of the transformer, _hforce = ID / IG = N2 / N1_ . 2N7638-GA is initially tuned-on using a gate current pulse supplied into an RC drive circuit to allow ID current to begin flowing. This topology allows IG,steady and the gate drive power consumption to reduce while ID is relatively low or for IG,steady to increase when ID increases. A simplified version of this topology is shown in Figure 15. Additional information will be available in the future at http://www.genesicsemi.com/references/product-notes/. **==> picture [213 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> N2<br>SiC SJT D<br>Gate Signal<br>G<br>S<br>N3 N1 N2<br>**----- End of picture text -----**<br> **Figure 15: Simplified Current Controlled Proportional Driver** Pg **7** of 8 Dec 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/ **2N7638-GA** ## **Section VI: Package Dimensions:** **SMD-0.5/TO-276 PACKAGE OUTLINE** **==> picture [439 x 196] intentionally omitted <==** **NOTE** 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS ||**Revision History**|**Revision History**|| |---|---|---|---| |Date|Revision|Comments|Supersedes| |2014/12/12|6|Updated Electrical Characteristics|| |2014/08/23|5|Updated Electrical Characteristics|| |2014/03/20|4|Updated Gate Drive Section|| |2014/02/11|3|Updated Electrical Characteristics|| |2013/12/19|2|Updated Gate Drive Section|| |2013/11/18|1|Updated Electrical Characteristics|| |2012/08/24|0|Initial release|| ||||| Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Pg **8** of 8 Dec 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/ **2N7638-GA** ## **Section VII: SPICE Model Parameters** This is a secure document. Please copy this code from the SPICE model PDF file on our website (http://www.genesicsemi.com/images/hit_sic/sjt/2N7638-GA_SPICE.pdf) into LTSPICE (version 4) software for simulation of the 2N7638-GA. - `MODEL OF GeneSiC Semiconductor Inc.` - ``` * $Revision: 1.3 $ * $Date: 12-DEC-2014 $ ``` - - `GeneSiC Semiconductor Inc.` - `43670 Trade Center Place Ste. 155` - `Dulles, VA 20166` - - `COPYRIGHT (C) 2014 GeneSiC Semiconductor Inc.` - `ALL RIGHTS RESERVED` - - `These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY` - `OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED` - `TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A` - `PARTICULAR PURPOSE."` - `Models accurate up to 2 times rated drain current.` - ``` .model 2N7638 NPN ``` ``` + IS 9.8338E-48 ``` ``` + ISE 1.0733E-26 ``` ``` + EG 3.23 + BF 130 + BR 0.55 + IKF 200 + NF 1 + NE 2. + RB 7.2 + IRB 0.002 + RBM 0.2 + RE 0.1039 + RC 0.06188 + CJC 2.73E-10 + VJC 3.04 + MJC 0.448 + CJE 6.86E-10 + VJE 2.89 + MJE 0.466 + XTI 3 + XTB -0.35 + TRC1 1.90E-2 + VCEO 600 ``` - `+ ICRATING 20` ``` + MFG GeneSiC_Semiconductor ``` ``` * ``` - `End of 2N7638-GA SPICE Model` Pg **1** of 1 Dec 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
Updated at February 9, 2023
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