2N7002WT1G.

2N7002W, 2V7002W 

## Small Signal MOSFET **60 V, 340 mA, Single, N−Channel, SC−70** 

## **Features** 

- ESD Protected 

- Low RDS(on) 

## **www.onsemi.com** 

- Small Footprint Surface Mount Package 

- 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

**V(BR)DSS RDS(on) MAX ID MAX** (Note 1) 1.6  @ 10 V 60 V 340 mA ~~|eS~~ 2.5  @ 4.5 V 

## **Applications** 

- Low Side Load Switch 

## **SIMPLIFIED SCHEMATIC** 

- Level Shift Circuits 

- DC−DC Converter 

 DC−DC Converter • Portable Applications i.e. DSC, PDA, Cell Phone, etc. Gate **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) **Rating Symbol Value Unit** Source Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ± 20 V ~~——~~ Drain Current (Note 1) ID mA Steady State TA = 25 ° C 310 TA = 85 ° C 220 t < 5 s TA = 25 ° C 340 TA = 85 ° C 240 ~~Till~~ Power Dissipation (Note 1) PD mW ~~»~~ Steady State 280 t < 5 s 330 **CASE 419** Pulsed Drain Current (tp = 10 s) IDM 1.4 A **STYLE 8** ~~po~~ Operating Junction and Storage TJ, TSTG −55 to ° C Temperature Range +150 Source Current (Body Diode) IS 250 mA Lead Temperature for Soldering Purposes TL 260 ° C (1/8 ″ from case for 10 s) ~~——a~~ e Gate−Source ESD Rating ESD 2000 V (HBM, Method 3015) ~~eeee eee~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be **Device** assumed, damage may occur and reliability may be affected. 

**==> picture [174 x 269] intentionally omitted <==**

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Gate 1<br>3 Drain<br>Source 2<br>(Top View)<br>Pep<br>MARKING DIAGRAM<br>& PIN ASSIGNMENT<br>Drain<br>3<br>71 M<br>SC−70/SOT−323<br>CASE 419<br>STYLE 8<br>1 2<br>=<br>Gate Source<br>71 = Device Code<br>M = Date Code<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


**ORDERING INFORMATION** 

|Stresses exceeding those listed in the Maximum Ratings table may damage the<br>device. If any of these limits are exceeded, device functionality should not be<br>assumed, damage may occur and reliability may be affected.<br>**THERMAL CHARACTERISTICS**<br>**Characteristic**<br>**Symbol**<br>**Max**<br>**Unit**<br>Junction−to−Ambient − Steady State<br>(Note 1)<br>R JA<br>450<br>°C/W<br>|**Device**<br>**Package**<br>**Shipping**†<br>2N7002WT1G<br>3000/Tape & Reel<br>SC−70<br>(Pb−Free)<br>2V7002WT1G<br>3000/Tape & Reel<br>SC−70<br>(Pb−Free)<br> ~~Ht~~|
|---|---|
||†For information on tape and reel specifications,|
|Junction−to−Ambient − t≤5 s (Note 1)<br>R JA<br>375|including part orientation and tape sizes, please|
|1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in<br>sq [1 oz] including traces)|refer to our Tape and Reel Packaging Specifications<br>Brochure, BRD8011/D.|



## **THERMAL CHARACTERISTICS** 

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2015 **April, 2015 − Rev. 6** 

**2N7002W/D** 

**2N7002W, 2V7002W** 

**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERIST**|**ICS**(TJ= 25°C un|less otherwise specified)|less otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Units**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V,|ID= 250�A|60|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ||||71||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 60 V|TJ= 25°C|||1.0|�A|
||||TJ= 150°C|||15|�A|
|||VGS= 0 V,<br>VDS= 50 V|TJ= 25°C|||100|nA|
||||TJ= 150°C|||10|�A|
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=±20 V||||±10|�A|
|||VDS= 0 V, VGS=±10 V||||450|nA|
|||VDS= 0 V, VGS=±5.0 V||||150|nA|
|**ON CHARACTERISTICS**(Note 2)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||1.0||2.5|V|
|Negative Threshold Temperature<br>Coefficient|VGS(TH)/TJ||||4.0||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V, ID= 500 mA|||1.19|1.6|�|
|||VGS= 4.5 V, ID= 200 mA|||1.33|2.5||
|Forward Transconductance|gFS|VDS= 5 V, ID= 200 mA|||530||mS|
|**CHARGES AND CAPACITANCES**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1 MHz,<br>VDS= 20 V|||24.5||pF|
|Output Capacitance|COSS||||4.2|||
|Reverse Transfer Capacitance|CRSS||||2.2|||
|Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 10 V;<br>ID= 200 mA|||0.7||nC|
|Threshold Gate Charge|QG(TH)||||0.1|||
|Gate−to−Source Charge|QGS||||0.3|||
|Gate−to−Drain Charge|QGD||||0.1|||
|**SWITCHING CHARACTERISTICS, VGS**|**=  V**(Note 3)|||||||
|Turn−On Delay Time|td(ON)|VGS= 10 V, VDD= 25 V,<br>ID= 500 mA, RG= 25�|||12.2||ns|
|Rise Time|tr||||9.0|||
|Turn−Off Delay Time|td(OFF)||||55.8|||
|Fall Time|tf||||29|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 200 mA|TJ= 25°C||0.8|1.2|V|
||||TJ= 85°C||0.7|||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

2. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2% 

3. Switching characteristics are independent of operating junction temperatures 

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**2** 

**2N7002W, 2V7002W** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
1.6 1.2<br>VGS = 10 V 5.0 V<br>4.5 V<br>9.0 V<br>8.0 V 4.0 V<br>1.2<br>7.0 V<br>6.0 V 0.8<br>3.5 V<br>0.8<br>TJ = 25 ° C<br>3.0 V 0.4<br>0.4<br>2.5 V<br>TJ = 125 ° C TJ = −55 ° C<br>0 0<br>0 2 4 6 0 2 4 6<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>3.2 3.2<br>VGS = 4.5 V VGS = 10 V<br>2.8 TJ = 125 ° C 2.8<br>2.4 TJ = 85 ° C 2.4 TJ = 125 ° C<br>2.0 TJ = 25 ° C 2.0 TJ = 85 ° C<br>1.6 1.6 °<br>TJ = −55 ° C TJ = 25 C<br>1.2 1.2<br>TJ = −55 ° C<br>0.8 0.8<br>0.4 0.4<br>0 0<br>0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 1.0 1.2<br>ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Drain Current and Figure 4. On−Resistance vs. Drain Current and<br>Temperature Temperature<br>2.4 2.2<br>ID = 0.2 A<br>2.0 ID = 500 mA<br>1.8<br>VGS = 4.5 V<br>1.6<br>VGS = 10 V<br>1.4<br>1.2 ID = 200 mA<br>1.0<br>0.8<br>0.4 0.6<br>2 4 6 8 10 −50 −25 0 25 50 75 100 125 150<br>VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( ° C)<br>Figure 5. On−Resistance vs. Gate−to−Source Figure 6. On−Resistance Variation with<br>Voltage Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>) �<br>, DRAIN−TO−SOURCE<br>DS(on)<br>R RESISTANCE (NORMALIZED)<br>, DRAIN−TO−SOURCE RESISTANCE (<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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**3** 

**2N7002W, 2V7002W** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [247 x 383] intentionally omitted <==**

**----- Start of picture text -----**<br>
30<br>Ciss<br>20<br>TJ = 25 ° C<br>VGS = 0 V<br>Coss<br>10<br>Crss<br>0<br>0 4 8 12 16 20<br>GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 7. Capacitance Variation<br>10<br>VGS = 0 V<br>1<br>TJ = 85 ° C TJ = 25 ° C<br>0.1<br>0.01<br>0.4 0.6 0.8 1.0 1.2<br>VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>, LEAKAGE (A)<br>IDSS<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
5<br>TJ = 25 ° C<br>4 ID = 0.2 A<br>3<br>2<br>1<br>0<br>0 0.2 0.4 0.6 0.8<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Qg, TOTAL GATE CHARGE (nC)<br>**----- End of picture text -----**<br>


**Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** 

**==> picture [252 x 203] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0E−6<br>VGS = 0 V<br>TJ = 150 ° C<br>1.0E−7<br>TJ = 125 ° C<br>1.0E−8<br>TJ = 85 ° C<br>1.0E−9<br>TJ = 25 ° C<br>1.0E−10<br>5 10 15 20 25 30 35 40 45 50 55 60<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 10. Drain−to−Source Leakage Current<br>vs. Voltage<br>, LEAKAGE (A)<br>IDSS<br>**----- End of picture text -----**<br>


**Figure 9. Diode Forward Voltage vs. Current** 

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**4** 

**2N7002W, 2V7002W** 

## **PACKAGE DIMENSIONS** 

**SC−70 (SOT−323)** CASE 419−04 

ISSUE N 

**==> picture [481 x 377] intentionally omitted <==**

**----- Start of picture text -----**<br>
D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>e1 2. CONTROLLING DIMENSION: INCH.<br>MILLIMETERS INCHES<br>3 DIM MIN NOM MAX MIN NOM MAX<br>A 0.80 0.90 1.00 0.032 0.035 0.040<br>HE E A1 0.00 0.05 0.10 0.000 0.002 0.004<br>1 2 A2 0.70 REF 0.028 REF<br>b 0.30 0.35 0.40 0.012 0.014 0.016<br>c 0.10 0.18 0.25 0.004 0.007 0.010<br>( a n ———_— D 1.80 2.10 2.20 0.071 0.083 0.087<br>b E 1.15 1.24 1.35 0.045 0.049 0.053<br>e 1.20 1.30 1.40 0.047 0.051 0.055<br>ole e —— e1 0.65 BSC 0.026 BSC<br>L 0.20 0.38 0.56 0.008 0.015 0.022<br>Se H E 2.00 2.10 2.40 0.079 0.083 0.095<br>A A2 c STYLE 8:PIN 1. GATE<br> 2. SOURCE<br> 3. DRAIN<br>0.05 (0.002) L<br>A1<br>_— He,44Jol —_———————<br>SOLDERING FOOTPRINT*<br>0.65<br>0.65 0.025<br>0.025<br>1.9<br>én.<br>0.075<br>0.9<br>0.035<br>0.7<br>LE<br>0.028<br>SCALE 10:1 mm<br>at _ inches<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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**5**