2N7002W

## **Is Now Part of** 

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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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## **2N7002W N-Channel Enhancement Mode Field Effect Transistor** 

## **Features** 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- Ultra-Small Surface Mount Package 

- Lead Free/RoHS Compliant 

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D<br>S<br>G<br>SOT - 323<br>Marking : 2N<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings *** TA = 25°C unless otherwise noted 

|**Absolute Maximum Ratings ***|**Absolute Maximum Ratings ***TA = 25°C unless otherwise notedA = 25°C unless otherwise noted= 25°C unless otherwise noted|TA = 25°C unless otherwise notedA = 25°C unless otherwise noted= 25°C unless otherwise noted||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Units**|
|VDSS|Drain-Source Voltage|60|V|
|VDGR|Drain-Gate Voltage RGS 1.0M|60|V|
|VGSS|Gate-Source Voltage                                Continuous<br>Pulsed|±20<br>±40|V|
|ID|Drain Current                         Continuous<br>Continuous @ 100°C<br>Pulsed|115<br>73<br>800|mA|
|TJ, TSTG|Junction and Storage Temperature Range|-55 to +150|C|



- These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. 

## **Thermal Characteristics** 

|**Symbol**|**Parameter**|**Value**|**Units**|
|---|---|---|---|
|PD|Total Device Dissipation<br>Derating above TA= 25°C|200<br>1.6|mW<br>mW/C|
|RJA|Thermal Resistance, Junction to Ambient *|625|C/W|



- Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size. 

© 2010 Fairchild Semiconductor Corporation 2N7002W Rev. A1 

www.fairchildsemi.com 

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## **Electrical Characteristics** TA = 25°C unless otherwise noted 

|**Electrical**|**Characteristics**TA= 25°C|unless otherwise noted|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Condition**|**Min.**|**Typ.**|**Max.**|**Units**|
|**Off Characteristics** (Note1)|||||||
|BVDSS|Drain-Source Breakdown Voltage|VGS=0V,  ID=10uA|60|78|-|V|
|IDSS|Zero Gate Voltage Drain Current|VDS=60V, VGS=0V<br>VDS=60V, VGS=0V, @TC=125C|-|0.001<br>7|1.0<br>500|A|
|IGSS|Gate-Body Leakage|VGS=±20V, VDS=0V|-|0.2|±10|nA|
|**On Characteristics** (Note1)|||||||
|VGS(th)|Gate Threshold Voltage|VDS=VGS, ID=250A|1.0|1.76|2.0|V|
|RDS(ON)|Static Drain-Source<br>On-Resistance|VGS=5V, ID=0.05A,<br>VGS=10V, ID=0.5A,  @TJ=125°C|-<br>-|1.6<br>2.53|7.5<br>13.5||
|ID(ON)|On-State Drain Current|VGS=10V, VDS=7.5V|0.5|1.43|-|A|
|gFS|Forward Transconductance|VDS=10V, ID=0.2A|80|356.5|-|mS|
|**Dynamic  Characteristics**|||||||
|Ciss|Input Capacitance|VDS=25V, VGS=0V,  f=1.0MHz|-|37.8|50|pF|
|Coss|Output Capacitance||-|12.4|25|pF|
|Crss|Reverse Transfer Capacitance||-|6.5|7.0|pF|
|**Switching  Characteristics**|||||||
|tD(ON)|Turn-On Delay Time|VDD=30V, ID=0.2A, VGEN=10V<br>RL=150, RGEN=25|-|5.85|20|ns|
|tD(OFF)|Turn-Off Delay Time||-|12.5|20||



Note1 : Short duration test pulse used to minimize self-heating effect. 

© 2010 Fairchild Semiconductor Corporation 2N7002W Rev. A1 

www.fairchildsemi.com 

2 

## **Typical Performance Characteristics** 

**Figure 1. On-Region Characteristics** 

**Figure 2. On-Resistance Variation with Gate Voltage and Drain Current** 

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1.6 3.0<br>1.4 VGS = 10V VGS = 3V 4V 4.5V 5V<br>1.2 2.5 6V<br>5V<br>1.0<br>4V<br>0.8 2.0<br>0.6<br>10V<br>0.4 3V 1.5 8V 9V<br>0.2 7V<br>2V<br>0.0 1.0<br>0 1 2 3 4 5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0<br>VDS. DRAIN-SOURCE VOLTAGE (V) ID. DRAIN-SOURCE CURRENT(A)<br>Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with<br>                 Temperature                   Gate-Source Voltage<br>3.0 3.0<br>VGS = 10V<br>2.5 ID = 500 mA 2.5<br>2.0 ID = 500 mA<br>2.0<br>1.5<br>ID = 50 mA<br>1.5<br>1.0<br>0.5 1.0<br>-50 0 50 100 150 2 4 6 8 10<br>TJ. JUNCTION TEMPERATURE(oC) VGS. GATE-SOURCE VOLTAGE (V)<br>(Ω)<br>(on),<br>DS<br>R<br>. DRAIN-SOURCE CURRENT(A)ID<br>DRANI-SOURCE ON-RESISTANCE<br>(Ω) (Ω)<br>(on)  (on),<br>DS DS<br>R R<br>DRANI-SOURCE ON-RESISTANCE DRANI-SOURCE ON-RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 5. Transfer Characteristics** 

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1.0<br>VDS = 10V TJ = -25oC<br>0.8 150oC<br>25oC<br>125oC<br>0.6<br>75oC<br>0.4<br>0.2<br>0.0<br>2 3 4 5 6<br>VGS. GATE-SOURCE VOLTAGE (V)<br>. DRAIN-SOURCE CURRENT(A)ID<br>**----- End of picture text -----**<br>


**Figure 6. Gate Threshold Variation with Temperature** 

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2.5<br>VGS = VDS<br>2.0<br>ID = 1 mA<br>ID = 0.25 mA<br>1.5<br>1.0<br>-50 0 50 100 150<br>TJ. JUNCTION TEMPERATURE(oC)<br>Vth, Gate-Source Threshold Voltage (V)<br>**----- End of picture text -----**<br>


© 2010 Fairchild Semiconductor Corporation 2N7002W Rev. A1 

www.fairchildsemi.com 

3 

## **Typical Performance Characteristics** 

**Figure 7. Reverse Drain Current Variation with Figure 8. Power Derating Diode Forward Voltage and Temperature** 

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280<br>VGS = 0 V<br>150oC 240<br>100<br>200<br>160<br>25oC<br>120<br>10<br>-55oC<br>80<br>40<br>10.0 0.2 0.4 0.6 0.8 1.0 0 0 25 50 75 100 125 150 175<br>VSD, Body Diode Forward Voltage [V] Ta[oC], AMBIENT TEMPERATURE<br> Reverse Drain Current, [mA]<br>IS [mW], POWER DISSIPATIONPC<br>**----- End of picture text -----**<br>


© 2010 Fairchild Semiconductor Corporation 2N7002W Rev. A1 

www.fairchildsemi.com 

4 

## **Package Dimensions** 

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    SOT323<br>**----- End of picture text -----**<br>


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© 2010 Fairchild Semiconductor Corporation 2N7002W Rev. A1 

www.fairchildsemi.com 

5 

## **TRADEMARKS** 

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 

As used herein: 

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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 

## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

|**Definition of Terms**|||
|---|---|---|
|**Datasheet Identification**|**Product Status**|**Definition**|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications may change in<br>anymanner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild<br>Semiconductor reserves the right to make changes at anytime without notice to improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes<br>at anytime without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.<br>The datasheet is for reference information only.|



Rev. I47 

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