2N7002TQ-7-F

**2N7002TQ** 7 

## **N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

## **Features** 

- Low On-Resistance 

   - Low Gate Threshold Voltage 

- 

- Low Input Capacitance 

|**BVDSS**|**RDS(ON)**|**ID **<br>**TA =**+**25°C**|
|---|---|---|
|60V|7.5Ω @ VGS= 5V|115mA|



- Fast Switching Speed 

- Low Input/Output Leakage 

- Ultra-Small Surface Mount Package 

   - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- 

   - **Halogen and Antimony Free. “Green” Device (Note 3)** 

- 

- **The 2N7002TQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.** 

## **Description and Applications** 

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

**https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

- DC-DC Converters 

   - Case: SOT523 

- Power Management Functions 

   - Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Battery Operated Systems and Solid-State Relays 

- Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc . 

- Moisture Sensitivity:  Level 1 per J-STD-020 

- Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 **e3** 

- Terminal Connections: See Diagram 

   - Weight: 0.002 grams (Approximate) 

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Top View 

## **Ordering Information** (Note 4) 

**Part Number Case Packaging** 2N7002TQ-7-F SOT523 3,000/Tape & Reel ~~—_—EESESSSS=—~~ 2N7002TQ-13-F SOT523 10,000/Tape & Reel Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

|||||||**72**<br>**YM**|**72**<br>**YM**|**72**<br>**YM**|**72**<br>**YM**||72 = Product Type Marking Code<br>YM = Date Code Marking<br>Y or Y = Year (ex: H = 2020)<br>M = Month (ex: 9 = September)|72 = Product Type Marking Code<br>YM = Date Code Marking<br>Y or Y = Year (ex: H = 2020)<br>M = Month (ex: 9 = September)|||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|<br>Date Code Key<br>**Year**<br>**2020**<br>**Code**<br>H<br>**Month**<br>**Jan**<br>**Code**<br>1<br>~~—~~<br>~~ee~~|||**2021**<br>I<br>**Feb**<br>2|**2022**<br>J<br>**Mar**<br>3||||**2023**<br>K<br>**Apr**<br>4||**2024**<br>L<br>**May**<br>5|**2025**<br>**2026**<br>**2027**<br>M<br>N<br>O<br>**Jun**<br>**Jul**<br>**Aug**<br>6<br>7<br>8||**2028**<br>P<br>**Sep**<br>9|**2029**<br>R<br>**Oct**<br>O|**2030**<br>S<br>**Nov**<br>N|**2031**<br>T<br>**Dec**<br>D|
|2N7002TQ||||||||||1 of 5|1 of 5||||March 2020||
|Document number: DS42547 Rev. 1 - 2||||||||||**www.diodes.com**|||||© Diodes Incorporated|© Diodes Incorporated|



March 2020 © Diodes Incorporated 

**2N7002TQ** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

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|||||
|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Drain-Source Voltage|VDSS|60|V|
|Drain-Gate Voltage (RGS  1.0M|VDGR|60|V|
|Gate-Source Voltage                                                                        P                                Continuous ulsed|VGSS|±20 ±40|V|
|Drain Current (Note 5)|Continuous|115|
|Continuous @ +100°C|ID|73|mA|
|Pulsed|800|

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**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

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|||||
|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Total Power Dissipation (Note 5)|PD|150|mW|
|Thermal Resistance, Junction to Ambient|RJA|833|°C/W|
|Operating and Storage Temperature Range|TJ, TSTG|-55 to +150|°C|

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**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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|||||||||
|---|---|---|---|---|---|---|---|
|Characteristic|Symbol|Min|Typ|Max|Unit|Test|Condition|
|OFF CHARACTERISTICS (Note 6)|
|Drain-Source Breakdown Voltage|BVDSS|60|||V|VGS = 0V, ID = 10A|
|Zero Gate Voltage Drain Current|@ T@ TC C =   +25°C= +125°C|IDSS|||500 1.0|µA|VDS = 60V, VGS = 0V|
|a|Gate-Body Leakage|IGSS|||±10|nA|VGS = ±20V, VDS = 0V|
|ON CHARACTERISTICS|(Note|6)|
|Gate Threshold Voltage|VGS(TH)|1.0||2.0|V|VDS = VGS, ID = 250A|
|Tee|Eu|
|Static Drain-Source On-Resistance|@ T@ TJ J = +125°C =   +25°C|RDS(ON)||2.0 4.4|13.5 7.5||VVGS GS = 10V= 5.0V,, IID D = = 0.5A 0.05A|
|a|On-State Drain Current|ID(ON)|0.5|1.0||A|VGS = 10V, VDS = 7.5V|
|Forward Transconductance|gFS|80|||mS|VDS =10V, ID = 0.2A|
|DYNAMIC|CHARACTERISTICS|(Note 7)|
|Input Capacitance|Ciss||22|50|pF|
|Output Capacitance|Coss||11|25|pF|VDS = 25V, VGS = 0V,|f = 1.0MHz|
|——|Reverse Transfer Capacitance|Crss||2.0|5.0|pF|
|a|ee|
|SWITCHING|CHARACTERISTICS|(Note 7)|
|Turn-On Delay Time|tD(ON)||7.0|20|ns|VDD = 30V, ID = 0.2A,|
|Turn-Off Delay Time|tD(OFF)||11|20|ns|RL = 150, VGEN = 10V, RGEN = 25|
|—|A|

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Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Short duration pulse test used to minimize self-heating effect. 

7. Guaranteed by design. Not subject to production testing. 

2 of 5 **www.diodes.com** 

2N7002TQ Document number: DS42547 Rev. 1 - 2 

March 2020 © Diodes Incorporated 

**2N7002TQ** 

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1.0 5<br>0.9 ee VGS = 10V ,<br>- 4<br>VGS = 7.0V<br>0.8<br>HE py<br>4<br>0.7 if<br>VGS = 6.0V<br>0.6<br>VGS = 5.0V<br>0.5 V GS  = 4.0V 3 VGS = 3.0V<br>0.4<br>VGS = 4.0V<br>0.3<br>| Senenenenee 2<br>0.2 VGS = 3.0V<br>0.1 VGS = 5.0V VGS = .0V6 VGS = .0V7 VGS = 10V<br>0 |Zo VGS = 2.5V 1 ae<br>0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0<br>VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN-SOURCE CURRENT (A)<br>Fig. 1  On-Region Characteristics Fig. 2  On-Resistance Variation with Gate Voltage<br>and Drain-Source Current<br>2.5 3.0<br>2.0 I   = 250µAD 2.5 VIDGS = 500mA = 10V<br>2.0<br>REE CE RLSEEEEE<br>1.5<br>1.5<br>1.0<br>1.0<br>coppers = EL er<br>e ee<br>0.5<br>0.5<br>0 PEPETEE)) 0 ert TT<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>T  , JUNCTION TEMPERATURE (C)J ° =  (PEPE TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 3  Gate Threshold Variation with Temperature Fig. 4  On-Resistance Variation with Temperature<br>60 5.0<br>f = 1MHz 4.5<br>50<br>TT) 4.0 =e<br>3.5<br>40<br>SP 3.0 ee<br>30 2.5 I D  = 50mA<br>hi | tt At<br>2.0<br>20 C iss 1.5<br>Ke Coss 1.0<br>10<br>0.5<br>0 Crss 0<br>0 SS 5 10 15 20 25 30 0 I 2 4 6 8 10<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 5  Typical Capacitance Fig. 6  On-Resistance vs. Gate-Source Voltage<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>D<br>, DRAIN-SOURCE CURRENT (A)<br>I<br>C, CAPACITANCE (pF)<br>, DRAIN-SOURCE ON-RESISTANCE )(<br>R<br>DS(ON)<br>,<br>DS(ON)<br> DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON),<br> DRAIN-SOURCE ON-RESISTANCE )(<br>R<br>**----- End of picture text -----**<br>


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2N7002TQ Document number: DS42547 Rev. 1 - 2 

March 2020 © Diodes Incorporated 

**2N7002TQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT523<br>**----- End of picture text -----**<br>


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SOT523<br>Dim  Min  Max  Typ<br>A1  0.00 0.10 0.05<br>A2  0.60 0.80 0.75<br>— —— A3  0.45 0.65 0.50<br>E E1 b 0.15 0.30 0.22<br>c 0.10 0.20 0.12<br>D  1.50 1.70 1.60<br>E  1.45 1.75 1.60<br>E1  0.75 0.85 0.80<br>foo = e  0.50 BSC<br>b<br>rT e1 oe e1  0.90 1.10 1.00<br>L  0.20 0.40 0.33<br>D a  0° --  8°<br>All Dimensions in mm<br>A2<br>A3<br>c a<br>A1 e L<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT523<br>**----- End of picture text -----**<br>


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Value<br>Dimensions<br>(in mm)<br>C  1.29<br>X  0.40<br>X1  0.70<br>Y  0.51<br>Y1  1.80<br>**----- End of picture text -----**<br>


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2N7002TQ Document number: DS42547 Rev. 1 - 2 

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**2N7002TQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

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2N7002TQ Document number: DS42547 Rev. 1 - 2 

March 2020 © Diodes Incorporated