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2N7002MTF
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, SOT-23, Surface Mount
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- Manufacturer: ONSEMI
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Powe
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 200mW
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-23
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 200mA
- Drain Source On State Resistance: 5ohm
- Gate Source Threshold Voltage Max: 2.5V
| Delivery and price | |
|---|---|
| Units per pack | 15000 |
| Price | 0.023 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**2N7002MTF** ## **N-Channel Small Signal MOSFET** ## **FEATURES** - ! Lower R DS(on) - ! Improved Inductive Ruggedness - ! Fast Switching Times - ! Lower Input Capacitance - ! Extended Safe Operating Area - ! Improved High Temperature Reliability ## **Product Summary** **==> picture [91 x 145] intentionally omitted <==** **----- Start of picture text -----**<br> BVDSS = 60 V<br>R = 5.0 Ω<br>DS(on)<br>ID = 200 mA<br>SOT-23<br>1.Gate 2. Source 3. Drain<br>**----- End of picture text -----**<br> |**Part Number BV**|**Part Number BVDSS**|**RDS(on)**|**ID**| |---|---|---|---| |2N7002 60V 5.0|2N7002 60V 5.0|2N7002 60V 5.0Ω|115mA| ## **Absolute Maximum Ratings** |**Symbol**|**Characteristic**|**Value**|**Units**| |---|---|---|---| |VDSS|Drain-to-Source Voltage|60|V| |ID|Continuous Drain Current (TC=25℃)|115|mA| ||Continuous Drain Current (TC=100℃)|73|| |IDM|Drain Current-Pulsed①|800|mA| |VGS|Gate-to-Source Voltage|±20|V| |PD|Total Power Dissipation (TC=25℃)<br>Linear Derating Factor|0.2<br>1.6|W<br>mW/℃| |TJ, TSTG|Operating Junction and<br>Storage Temperature Range|- 55 to +150|℃| ## **Thermal Resistance** |RθJA<br>**Symbol**|Junction-to-Ambient<br>**Characteristic**|--<br>**Typ.**|625<br>**Max.**|℃/W<br>**Units**| |---|---|---|---|---| Rev. C1 **N-Channel Small Signal MOSFET** ## **2N7002MTF** **Electrical Characteristics** (TC=25℃ unless otherwise specified) |**N-Channel**<br>**Small Signal MOSFET**<br>**2N7002MTF**|**N-Channel**<br>**Small Signal MOSFET**<br>**2N7002MTF**|**N-Channel**<br>**Small Signal MOSFET**<br>**2N7002MTF**|**N-Channel**<br>**Small Signal MOSFET**<br>**2N7002MTF**|**N-Channel**<br>**Small Signal MOSFET**<br>**2N7002MTF**|**N-Channel**<br>**Small Signal MOSFET**<br>**2N7002MTF**|**N-Channel**<br>**Small Signal MOSFET**<br>**2N7002MTF**| |---|---|---|---|---|---|---| |**Electrical Characteristics**(TC=25℃C=25℃=25℃℃unless otherwise specified)<br>a<br>eeGeeeeeee||||||| |**Symbol**<br>a<br>a|**Characteristic**<br>eeGe<br>ee|**Min.**<br>Ge<br>ee|**Typ.**<br>ee<br>ee|**Max.**<br>ee<br>ee|**Units**<br>ee<br>es|**Test Condition**| |BVDSS<br>a<br>a<br>a|Drain-Source Breakdown Voltage<br>eeGe<br>ee<br>ee|60<br>Ge <br>ee<br>ee|-<br> ee <br>ee<br>ee|-<br> ee <br>ee<br>ee|V<br> ee<br>es<br>es|VGS= 0V, ID= 250µA| |VGS(th)<br>a<br>a<br>——————EeE|Gate Threshold Voltage<br>ee <br>ee<br>——————EeE|1.2<br> ee <br>ee<br>——————EeE|-<br> ee <br>ee<br>——————EeE|2.5<br> ee <br>ee<br>——————EeE|V<br> es<br>es<br>——————EeE|VDS= VGS, ID= 250µA<br>——————EeE| |IGSS<br>a<br>——————EeE<br>|Gate-Source Leakage, Forward<br>ee <br>——————EeE<br>|-<br> ee <br>——————EeE<br>ee<br><br>a|-<br> ee <br>——————EeE<br>ee<br>|100<br> ee <br>——————EeE<br>eees<br>|nA<br> es<br>——————EeE<br>es<br>|VGS= 20V<br>——————EeE<br>=| ||Gate-Source Leakage, Reverse<br>——————EeE<br>ee<br>|-<br>——————EeE<br>ee<br>ee<br><br>a|-<br>——————EeE<br>ee<br>ee<br>|-100<br>——————EeE<br>ee<br>eees<br>||VGS= -20V<br>——————EeE<br>=| |IDSS<br>——————EeE<br>EEE<br>es|Drain-to-Source Leakage Current<br>——————EeE<br>EEE|-<br>——————EeE<br>ee <br>EEE<br>a|-<br>——————EeE<br> ee <br>EEE|1.0<br>——————EeE<br> eees<br>EEE|µA<br>——————EeE<br>es<br>EEE|VGS= 40V<br>——————EeE<br>EEE=| |||-<br>EEE<br>a|-<br>EEE|500<br>EEE||VGS= 40V, TC= 125℃<br>EEE=<br>ee| |ID(ON)<br><br>es|On-State Drain-Source Current<br>|0.5<br><br>a|-<br>|-<br>|A<br>|VDS= 10V, VGS= 10V<br>=<br>ee| |RDS(on)<br>es<br>a|Static Drain-Source<br>On-State Resistance②<br>ee|-<br>ee|-<br>ee|5.0<br>ee|Ω<br>es|VGS= 10V, ID= 0.5A<br>ee| |gfs<br>es<br>a<br>a|Forward Transconductance②<br>ee<br>|0.08<br>ee<br>ee<br>|-<br>ee<br>ee<br>|-<br>ee<br>ee<br>|S<br>es<br>ee|VDS= 15V, ID= 0.2A<br>ee| |Ciss<br>a<br>aee<br>a<br>a|Input Capacitance<br>ee <br>ee<br><br>|-<br> ee <br>ee<br>ee<br><br>ee<br>|-<br> ee <br>ee<br>ee<br><br>ee<br>|50<br> ee <br>ee<br>ee<br><br>ee<br>|pF<br> es<br>ee<br>ee<br>ee<br>ee|VDS= 25V, VGS= 0V,<br>f = 1.0MHz| |Coss<br>aee<br>a<br>a|Output Capacitance<br>ee<br><br>|-<br>ee <br>ee<br>ee<br><br>ee<br>|-<br> ee <br>ee<br>ee<br><br>ee<br>|25<br> ee<br>ee<br>ee<br><br>ee<br>||| |Crss<br>aee<br>a<br>a|Reverse Transfer Capacitance<br>ee<br><br>|-<br>ee <br>ee<br>ee<br><br>ee<br>|-<br> ee <br>ee<br>ee<br><br>ee<br>|5<br> ee<br>ee<br>ee<br><br>ee<br>||| |td(on)<br>aee<br>a<br>a|Turn-On Delay Time<br>ee<br><br>|-<br>ee <br>ee<br>ee<br><br>ee<br>|-<br> ee <br>ee<br>ee<br><br>ee<br>|20<br> ee<br>ee<br>ee<br><br>ee<br>|ns<br>ee<br>ee<br>ee<br>**ee**|VDD= 30V, ID= 0.2A<br>RG= 25Ω<br>②③| |tr<br>aee<br>a<br>a|Rise Time<br>ee<br><br>|-<br>ee <br>ee<br>ee<br><br>**ee**<br>|-<br> ee <br>ee<br>ee<br><br>ee<br>|-<br> ee<br>ee<br>ee<br><br>**ee**<br>||| |td(off)<br>aee<br>a|Turn-Off Delay Time<br>ee<br>|-<br>ee <br>ee<br>**ee**<br>|-<br> ee <br>ee<br>ee<br><br>ee|20<br> ee<br>ee<br>**ee**<br>||| |tf<br>aee|Fall Time<br>ee|-<br>**ee** <br>ee|-<br> ee <br>ee<br>ee|-<br> **ee**<br>ee||| |**Source-Drain Diode Ratings and Characteristics**<br>ee||||||| |**Symbol**|**Characteristic**|**Min.**|**Typ.**|**Max.**|**Units**|**Test Condition**| |IS|Continuous Source Current|-|-|115|mA|Integral reverse pn-diode<br>In the MOSFET| |ISD|Pulse Source Current<br>①|-|-|800|mA|| |VSD|Diode Forward Voltage<br>②|-|-|1.5|V|TA= 25℃, IS= 115mA<br>VGS= 0V| |**Notes ;**<br>①Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature<br>②Pulse Test : Pulse Width = 250μs, Duty Cycle≤2%<br>③Essentially Independent of Operating Temperature||||||| ## **Notes ;** - ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature - ② Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2% - ③ Essentially Independent of Operating Temperature **2N7002MTF** ## **N-Channel** ## **Small Signal MOSFET** **N-Channel Small Signal MOSFET** ## **2N7002MTF** ## **TRADEMARKS** The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. |ACEx™|FAST|ISOPLANAR™|Power247™|SuperFET™| |---|---|---|---|---| |ActiveArray™|<br>FASTr™|LittleFET™|PowerSaver™|SuperSOT™-3| |<br>Bottomless™|FPS™|MICROCOUPLER™|PowerTrench|SuperSOT™-6| |CoolFET™|FRFET™|MicroFET™|QFET|SuperSOT™-8| |_CROSSVOLT_™|GlobalOptoisolator™|MicroPak™|QS™|SyncFET™| |DOME™|GTO™|MICROWIRE™|QT Optoelectronics™|TinyLogic| |EcoSPARK™|HiSeC™|MSX™|Quiet Series™|TINYOPTO™| |E2CMOS™|I2C™|MSXPro™|RapidConfigure™|TruTranslation™| |EnSigna™|_i-Lo_™|OCX™|RapidConnect™|UHC™| |ImpliedDisconnect™<br>FACT™<br>FACT Quiet Series™||OCXPro™<br>OPTOLOGIC|µSerDes™<br>SILENT SWITCHER|UltraFET<br>VCX™| |Across the board. Around the world.™||OPTOPLANAR™|SMART START™|| |The Power Franchise||PACMAN™|SPM™|| |Programmable Active Droop™||POP™|Stealth™|| ## **DISCLAIMER** FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. ## **LIFE SUPPORT POLICY** FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. ## **PRODUCT STATUS DEFINITIONS** ## **Definition of Terms** |**Definition of Terms**||| |---|---|---| |**Datasheet Identification**|**Product Status**|**Definition**| |Advance Information|Formative or<br>In Design|This datasheet contains the design specifications for<br>product development. Specifications may change in<br>any manner without notice.| |Preliminary|First Production|This datasheet contains preliminary data, and<br>supplementary data will be published at a later date.<br>Fairchild Semiconductor reserves the right to make<br>changes at any time without notice in order to improve<br>design.| |No Identification Needed|Full Production|This datasheet contains final specifications. Fairchild<br>Semiconductor reserves the right to make changes at<br>any time without notice in order to improve design.| |Obsolete|Not In Production|This datasheet contains specifications on a product<br>that has been discontinued by Fairchild semiconductor.<br>The datasheet is printed for reference information only.| Rev. I11
Updated at March 10, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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