2N7002KW

## 2N7002KW 

## N-Channel Enhancement Mode Field Effect Transistor 

## **Features** 

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- Low On−Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- Ultra−Small Surface Mount Package 

- These Devices are Pb−Free and are RoHS Compliant 

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D<br>« S<br>G<br>SC−70<br>3 LEAD<br>CASE 419AB<br>**----- End of picture text -----**<br>


- ESD HBM = 1000 V as per JESD22 A114 and ESD CDM = 1500 V as per JESD22 C101 

## **MARKING DIAGRAM** 

## **ABSOLUTE MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted) 

|**Rating**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Drain−Source Voltage|VDSS|60|V|
|Gate−Source Voltage|VGSS|±20|V|
|Maximum Drain Current<br>Continuous<br>TJ= 100°C<br>Pulsed|ID|310<br>195<br>1.2|mA<br>mA<br>A|
|Operating Junction Temperature Range|TJ|−55 to<br>+150|°C|
|Storage Temperature Range|TSTG|−55 to<br>+150|°C|



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7KW<br>7KW = Specific Device Marking<br>**----- End of picture text -----**<br>


D G S **ORDERING INFORMATION**[†] **Device Package Shipping**[†] 2N7002KW SC−70 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

**THERMAL CHARACTERISTICS** 

**Parameter Symbol Value Unit** Total Device Dissipation PD 300 mW Derating above TA = 25 ° C 2.4 mW/ ° C Thermal Resistance, R JA 410 ° C/W Junction to Ambient* *Device mounted on FR−4 PCB, 1 ″ x 0.85 ″ x 0.062 ″ . Minimum land pad size 

Publication Order Number: **2N7002KW/D** 

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© Semiconductor Components Industries, LLC, 2011 **May, 2018 − Rev. 1** 

**2N7002KW** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL**|**CHARACTERISTICS**(TA= 25°C unle|ss otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||||
|BVDSS|Drain−Source Breakdown Voltage|VGS= 0 V, ID= 10�A|60|−|−|V|
|IDSS|Zero Gate Voltage Drain Current|VDS= 60 V, VGS= 0 V<br>VDS= 60 V, VGS= 0 V, TJ= 125°C|−|−|1.0<br>0.5|�A<br>mA|
|IGSS|Gate−Body Leakage|VDS= 0 V, VGS=±20 V|−|−|±10|�A|
|**ON CHARACTERISTICS**(Note 1)|||||||
|VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= 250�A|1.1|−|2.1|V|
|RDS(on)|Static Drain−Source On−Resistance|VGS= 10 V, ID= 500 mA<br>VGS= 10 V, ID= 500 mA, TJ= 100°C<br>VGS= 5 V, ID= 50 mA<br>VGS= 5 V, ID= 50 mA, TJ= 100°C|−|−|1.6<br>2.4<br>2<br>3|�|
|VDS(on)|Drain−Source On−Voltage|VGS= 10 V, ID= 500 mA<br>VGS= 5 V, ID= 50 mA|−|−|3.75<br>1.5|V|
|ID(on)|On−State Drain Current|VGS= 10 V, VDS= 2 V|500|−|−|mA|
|gFS|Forward Transconductance|VDS= 2 V, ID= 0.2 A|80|−|−|mS|
|**DYNAMIC CHARACTERISTICS**|||||||
|Ciss|Input Capacitance|VDS= 25 V, VGS= 0 V, f = 1.0 MHz|−|−|50|pF|
|Coss|Output Capacitance||−|−|25|pF|
|Crss|Reverse Transfer Capacitance||−|−|5|pF|
|**SWITCHING CHARACTERISTICS**|||||||
|td(on)|Turn-On Delay Time|VDD= 30 V, RL= 150�, VGS= 10 V,<br>ID= 200 mA, RGEN= 25�|−|−|20|ns|
|td(off)|Turn-Off Delay Time||−|−|60|ns|
|**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||
|IS|Maximum Continuous Drain−Source Diode Forward Current||−|−|115|mA|
|ISM|Maximum Pulsed Drain−Source Diode|Forward Current|−|−|0.8|A|
|VSD|Drain−Source Diode Forward Voltage|VGS= 0 V, IS= 115 mA|−|−|1.1|V|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width < 300 � s, Duty Cycle < 2.0%. 

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**2** 

**2N7002KW** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

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2.4<br>VGS = 10V<br>2.1 9V<br>8V<br>1.8 6V<br>7V<br>1.5 5V<br>1.2<br>0.9 4V<br>0.6<br>0.3 V GS  = 3V<br>0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5<br>VDS. Drain−Source Voltage (V)<br>Figure 1. On−Region Characteristics<br>3.0<br>VGS = 4V<br>2.5 4.5V<br>5V VGS = 7V<br>2.0<br>6V<br>1.5<br>10V<br>9V<br>1.0 8V<br>0.5<br>0.0 0.5 1.0 1.5 2.0<br>ID. Drain−Source Current(A)<br>Figure 3. On−Resistance Variation with Gate<br>Voltage and Drain Current<br>3.5<br>3.0 VDS = 10V TA = −55(oC)<br>TA = 25( oC)<br>2.5<br>2.0<br>TA = 125( oC)<br>1.5<br>1.0<br>0.5<br>0.0<br>0 1 2 3 4 5 6 7 8 9 10<br>VGS. Gate−Source Voltage (V)<br>. Drain−Source Current (A)<br>ID<br>)( �<br>(on),<br>DS<br>R<br>Drain−Source On−Resistance<br>. Drain−Source Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 3. On−Resistance Variation with Gate Voltage and Drain Current** 

**Figure 5. Transfer Characteristics** 

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2.2<br>2.0<br>1.8 VGS  = 10V<br>1.6 I D  = 500mA<br>1.4<br>1.2 VGS = 5V<br>ID = 50mA<br>1.0<br>0.8<br>0.6<br>0.4<br>−50 0 50 100 150<br>TJ. Junction Temperature ( oC)<br>)( �<br>(on)<br>DS<br>R<br>Normalized Drain−Source On−Resistance<br>**----- End of picture text -----**<br>


**Figure 2. On−Resistance Variation with Temperature** 

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5<br>VGS = 10V<br>4<br>3<br>TA = 125 oC<br>2<br>TA = 25 oC<br>1<br>TA = −55 oC<br>0<br>0.0 0.5 1.0 1.5 2.0<br>ID. Drain Current (A)<br>Figure 4. On−Resistance Variation with Drain<br>Current and Temperature<br>1.10<br>VDS = VGS<br>1.05<br>1.00<br>0.95 ID = 1mA<br>0.90 I D  = 0.25mA<br>0.85<br>0.80<br>0.75<br>−25 0 25 50 75 100 125<br>TJ. Junction Temperature ( oC)<br>)( �<br>(on)<br>DS<br>R<br>Drain−Source On−Resistance<br>Vth.<br>Normalized Gate−Source Threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Figure 4. On−Resistance Variation with Drain Current and Temperature** 

**Figure 6. Gate Threshold Variation with Temperature** 

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**3** 

**2N7002KW** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

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1.100<br>1.075 I D =250uA<br>1.050<br>1.025<br>1.000<br>0.975<br>0.950<br>0.925<br>−25 0 25 50 75 100 125<br>TJ, Junction Temperatture( oC)<br>BVdss , Normalized<br>Drain Source Breakdown Voltage<br>**----- End of picture text -----**<br>


**Figure 7. Breakdown Voltage Variation with Temperature** 

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10000<br>VGS = 0 V<br>1000<br>100<br>TA=125oC<br>10<br>TA=25oC<br>1<br>TA=−55oC<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD. Body Diode Forward Voltage [V]<br>. Reverse Drain Current [mA]<br>IS<br>**----- End of picture text -----**<br>


**Figure 8. Body Diode Forward Voltage Variation with Source Current and Temperature** 

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100<br>C ISS<br>10<br>C OSS<br>f = 1MHZ C RSS<br>VGS = 0V<br>1<br>1 10 100<br>VDS. Drain to Source Voltage (V)<br>. Capacitance (pF)<br>RSS<br> C<br>OSS,<br> C<br>ISS,<br>C<br>**----- End of picture text -----**<br>


**Figure 9. Capacitance Variation** 

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10<br>VDS = 25V<br>8<br>6<br>4 I D  = 500mA<br>2<br>ID = 115mA ID = 280mA<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0<br>Qg. Gate Charge (nC)<br>. Gate−Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 10. Gate Charge Characteristics** 

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100<br>100 � s<br>1ms<br>10−1 100ms 10ms<br>1S<br> R DS(on) Limit DC<br>10−2<br>10−3    Vgs=10V Single Pulse<br>Rthja=410oC/W<br>T a [ = 25] oC<br>10−410−1 100 101 102<br>VDS, Drain−Source Voltage [V]<br>, Drain Current [A]<br>ID<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Safe Operating Area** 

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1<br>50%<br>Rthja(t)=r(t)*Rthja<br>20% Rthja=410 oC/W<br>0.1 10%<br>5%<br>2%<br>D=1%<br>Single Pulse<br>0.01<br>1E−4 1E−3 0.01 0.1 1 10 100 1000<br>t1, time(sec)<br>r(t), Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


**Figure 12. Transient Thermal Response Curve** 

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**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SC−70, 3 Lead, 1.25x2** CASE 419AB−01 ISSUE O 

DATE 19 DEC 2008 

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SYMBOL MIN NOM MAX<br>D<br>A 0.80 1.10<br>A1 0.00 0.10<br>A2 0.80 0.90 1.00<br>- ———<br>b 0.15 0.30<br>c 0.08 0.22<br>E1 E D 1.80 2.00 2.20<br>E 1.80 2.10 2.40<br>oy! Se E1 1.15 1.25 1.35<br>e 0.65 BSC<br>S55<br>L 0.26 0.36 0.46<br>e e<br>L1 0.42 REF<br>L2 0.15 BSC<br>TOP VIEW<br>θ 0º 8º<br>=<br>θ1 4º 10º<br>mo 1<br>A2 A<br>L<br>b<br>1 A1 L1 c L2<br>**----- End of picture text -----**<br>


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SIDE VIEW<br>**----- End of picture text -----**<br>


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END VIEW<br>**----- End of picture text -----**<br>


**Notes:** 

(1)  All dimensions are in millimeters. Angles in degrees. 

(2)  Complies with JEDEC MO-203. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON34256E** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SC−70, 3 LEAD, 1.25X2 PAGE 1 OF 1** ~~——————<———~~ 

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