2N7002KQ-7

**2N7002K** 

## **N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

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||||
|---|---|---|
|BVDSS|RDS(ON) Max|TAI = +25°C D Max|
|2Ω @ VGS = 10V|380mA|
|60V|
|3Ω @ VGS = 5V|310mA|

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## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **ESD Protected Up To 2kV** 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description** 

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- **The 2N7002KQ is suitable for automotive applications requiring specific change control; it is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.** 

- **https://www.diodes.com/quality/product-definitions/** 

## **Applications** 

- Motor Control 

- Power Management Functions 

- Backlighting 

## **Mechanical Data** 

- Case: SOT23 

- Case Material: Molded Plastic, “Green” Molding Compound.  UL Flammability  Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish  Matte Tin Annealed over Alloy 42 Leadframe.  Solderable per MIL-STD-202, Method 208 **e3** 

- Weight: 0.008 grams (Approximate) 

Drain 

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||||||
|---|---|---|---|---|
|SOT23|
|D|
|Gate|
|G|S|
|Gate|
|ESD protected up to 2kV|Protection|Source|
|AH,|Diode|
|Top View|Equivalent Circuit|Top View|
|g Information Information|(Note 4)|
|Part Number|Compliance|Case|Packaging|
|2N7002K-7|Standard|SOT23|3000/Tape & Reel|
|2N7002KQ-7|Automotive|SOT23|3000/Tape & Reel|
|2N7002K-13|Standard|SOT23|10000/Tape & Reel|
|2N7002KQ-13|Automotive|SOT23|10000/Tape|& Reel|

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## **Ordering Information Information** (Note 4) 

- Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

K7K = Product Type Marking Code YM or    M= Date Code Marking Y or    = Year (ex: F = 2018) M = Month (ex: 9 = September) 

Date Code Key 

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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Year|2006|~|2018|2019|2020|2021|2022|2023|2024|2025|2026|2027|
|Code|T|~|F|G|H|I|J|K|L|M|N|O|
|Month|Jan|Feb|Mar|Apr|May|Jun|Jul|Aug|Sep|Oct|Nov|Dec|
|——ee|Code|1|2|3|4|5|6|7|8|9|O|N|D|
|2N7002K|1 of 6|October 2019|
|Document number: DS30896 Rev. 16 - 2|www.diodes.com|© Diodes Incorporated|

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**2N7002K** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|60|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|380<br>300|mA|
||t<5s|TA= +25°C<br>TA= +70°C|ID|430<br>340|mA|
|Continuous Drain Current (Note 6) VGS= 5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|310<br>240|mA|
||t<5s|TA= +25°C<br>TA= +70°C|ID|350<br>270|mA|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|0.5|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%) (Note 6)|||IDM|1.2|A|



**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)||PD|370|mW|
|Thermal Resistance, Junction to Ambient (Note 5)|SteadyState|RθJA|357|°C/W|
||t<5s||292||
|Total Power Dissipation(Note 6)||PD|540|mW|
|Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RθJA|240|°C/W|
||t<5s||197||
|Thermal Resistance,Junction to Case(Note 6)||RθJC|91||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage<br>~~a~~|BVDSS|60|—|—|V|VGS= 0V,ID= 10µA|
|Zero Gate Voltage Drain Current<br>~~a~~|IDSS|—|—|1.0|µA|VDS= 60V,VGS= 0V|
|Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|±10<br>~~ee~~|µA<br>~~ee~~|VGS= ±20V,VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(TH)<br>~~ee~~|1.0<br>~~ee~~<br>~~|~~|1.6<br>~~ee~~<br>~~||~~|2.5<br>~~ee~~<br>~~||~~|V<br>~~ee~~<br>~~|~~|VDS= 10V,ID= 1mA<br>~~ee~~<br>~~—————~~|
|Static Drain-Source On-Resistance<br>~~—__}_|~~|RDS(ON)<br>~~—__}_|~~|—<br>~~—__}_|~~<br>~~|~~|—<br>—<br>~~—__}_|~~<br>~~||~~|2.0<br>3.0<br>~~—__}_|~~<br>~~||~~|Ω<br>~~—__}_|~~<br>~~|~~|VGS= 10V,ID= 0.5A<br>~~—__}_|~~<br>~~—————~~|
|||||||VGS= 5V,ID= 0.05A<br>~~—__}_|~~<br>~~—————~~|
|Forward Transfer Admittance<br>~~—__}_|~~||Yfs|<br>~~—__}_|~~|80<br>~~—__}_|~~<br>~~|~~|—<br>~~—__}_|~~<br>~~||~~<br>~~GO~~|—<br>~~—__}_|~~<br>~~||~~<br>~~GO~~|ms<br>~~—__}_|~~<br>~~|~~|VDS=10V,ID= 0.2A<br>~~—__}_|~~<br>~~—————~~|
|Diode Forward Voltage<br>~~GO~~<br>~~—~~|VSD<br>~~GO~~|—<br>~~|~~<br>~~GO~~|0.75<br>~~| |~~<br>~~GO~~<br>~~GO~~|1.1<br>~~| |~~<br>~~GO~~<br>~~GO~~|V<br>~~| ~~<br>~~GO~~<br>~~e~~|VGS= 0V,IS= 115mA<br> ~~—————~~<br>~~GO~~<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~GO~~<br>~~GO~~<br>~~—~~<br>~~ee~~|||||||
|Input Capacitance<br>~~—~~|Ciss|—|30|50|pF<br>~~e~~|VDS= 25V, VGS= 0V<br>f = 1.0MHz<br>~~ee~~|
|Output Capacitance<br>~~—~~|Coss|—|4.2|25|pF<br>~~e~~||
|Reverse Transfer Capacitance<br>~~—~~|Crss|—|2.9|5.0|pF<br>~~e~~||
|Gate Resistance<br>~~—~~|Rg|—|133|—|Ω<br>~~e~~|f = 1MHz,VGS= 0V,VDS= 0V<br>~~ee~~|
|Total Gate Charge<br>~~—~~|Qg|—|0.3|—|nC<br>~~e~~|VGS= 4.5V, VDS= 10V,<br>ID= 250mA<br>~~ee~~<br>~~ee~~|
|Gate-Source Charge|Qgs|—|0.2|—|nC||
|Gate-Drain Charge<br>~~————~~|Qgd|—|0.08|—|nC<br>~~ee~~||
|Turn-On DelayTime<br>~~————~~|tD(ON)|—|3.9|—|ns<br>~~ee~~|VDD= 30V, VGS= 10V,<br>RG= 25Ω, ID= 200mA<br>~~ee~~|
|Turn-On Rise Time<br>~~————~~|tR|—|3.4|—|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~————~~|tD(OFF)|—|15.7|—|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~————~~|tF|—|9.9|—|ns<br>~~ee~~||



Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

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**2N7002K** rd 

Lr' n ¢c oO R Po R A TeE 

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1.0<br>0.8<br>Y |<br>0.60.4 We if<br>0.2<br>| VA<br>0 Ai<br>0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 1  Typical Output Characteristics<br>2 | | Vps=nenD 10V<br>1.5<br>oS Pused<br>PL<br>1 -<br>0.5<br>g 0 Sy PPT yy<br>-50 -25 0 25 50 75 100 125 150<br>Tch, CHANNEL TEMPERATURE  ( °C 癈 )<br>Fig. 3  Gate Threshold Voltage vs. Channel Temperature<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 2  Typical Transfer Characteristics<br>**----- End of picture text -----**<br>


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10 Qa Oe OO OG GGG GG GOO lO<br>Pot [|tT yt)<br>PoCerrirr VegSs= 10V PotCocoTy<br>Ce Coo<br>w OC WC<br>ee (CUMIN epee meee THI<br>22 eelcoa<br>s6 comm 1 |<br>xay o  eeLoo<br>79 eeeTea,ee<br>Rw  sscih<br>< Ee ee ee | || A Ai<br>ee ts 8 i Baal<br>ET<br>FO 0.1 |  LUTUE<br>0.001 0.01 0.1 1<br>ID, DRAIN CURRENT (A)<br>Fig. 4 Static Drain-Source On-Resistance vs. Drain Current<br>**----- End of picture text -----**<br>


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0.01 0.1 1<br>ID, DRAIN CURRENT (A)<br>Fig. 5  Static Drain-Source On-Resistance vs. Drain Current<br>**----- End of picture text -----**<br>


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0<br>0 2 4 6 8 10 12 14 16 18 20<br>VGS [,]  GATE SOURCE VOLTAGE (V)<br>Fig. 6  Static Drain-Source On-Resistance vs. Gate-Source Voltage<br>**----- End of picture text -----**<br>


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, REVERSE DRAIN CURRENT (A)<br>IDR<br>**----- End of picture text -----**<br>


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0<br>-75 - 50 - 25 0 25 50 75 100 125<br>TCH, CHANNEL TEMPERATURE (°C)<br>Fig. 7  Static Drain-Source On-State Resistance<br>vs. Channel Temperature<br>**----- End of picture text -----**<br>


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ee ee ee Ae<br>ey Ae<br>0 .SV 1 ———|a—————————————f oo A aes<br>ai fya<br>ee ee ee<br>ee ee ee<br>0.09 felt] Yi tt<br>pFyo tt Ves= OV Pf<br>r++ 44+++44<br>oot | | | FT | ttt<br>0 0 . 5 1<br>Vp, SOURCE -D RAIN VOLTAGE (V)<br>Fig . 9 Reverse Drain Current vs . Source -D rain Voltage<br>1 aSSSee RDS(on) TINCTRENCEoe<br>Limited<br>|Ht IRN RTI TAO>oNETT<br>DC<br>|| NSS NT<br>0.1 ENSUE PW = 10s<br>rrat,SSEa PW = 1s ODM[tTEREANNY<br>LeSt| ft Ty P W  = 100ms PW = 10ms INRINGNHRYON RATENE ETT<br>ee ee PW = 1ms NAYSell<br>0.01 te ee PW =  100 祍 µs NG YW<br>P W  = 10µs<br>aee [a]  eae<br>T J(max)  =  1 5050°C 癈<br>T A = 25 25 癈 ° C oiia [|]<br>Single Pulse<br>0.001 WET E ET<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 11 Safe Operation Area<br>D<br>, DRAIN CURRENT (A)<br>I<br>, REVERSE DRAIN CURRENT (A)<br>IDR<br>**----- End of picture text -----**<br>


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Pulsed | TTC<br>Sea rrr<br>A = al<br>PO A<br>0.1. ETa=eal==990ree toemune,BAO2a Ta = 150°C meeety<br>[ eeAvie | tT<br>LAA<br>Be Z-Z40|<br>0 . 01  QAZA (|pesacee | HII LUT<br>a<br>IE TT<br>ool0 . 001 LLTHM 0 . 01 LLIN 0 . 1 | LIL 1<br>ID, DRAIN CURRENT (A)<br>Fig.10  Forward Transfer Admittance vs. Drain Current<br>|, FORWARD TRANSFER  ADMITTANCE (S)<br>fs<br>|Y<br>**----- End of picture text -----**<br>


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109 CUTAN UTE FIM ETA ET EST Tl<br>Single Pulse<br>8 R JA  = 240C/W<br>A a RJA(t) = r(t) * RJA Hill<br>7 TJ - TA = P * RJA(t)<br>Bt<br>6 CUT TNE\  AIT Hill<br>5 CUNEATE ! ATE ETAL ETT ETT Ti<br>4 SMUTEC ETA EC ETT Ti<br>\<br>3 \<br>2 CUT UITE P SETAEN ETT ETT Ti<br>1 SUITINGN Tl<br>0 a aa | tcc<br>0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 12 Single Pulse Maximum Power Dissipation<br>, PEAK TRANSIENT POWER (W)<br>(PK)<br>P<br>, PEAK TRANSIENT POIWER (W)<br>P<br>(PK)<br>**----- End of picture text -----**<br>


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2N7002K 

October 2019 © Diodes Incorporated 

Document number: DS30896 Rev. 16 - 2 

**2N7002K** 

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Dimes<br>1 D = 0.9<br>D = 0.7<br>Te D = 0.5<br>Ht D = 0.3 HHI Ht eae HHH HHI Ha<br>0.1<br>D = 0.1<br>TT D = 0.05 Gh at<br>D = 0.02<br>meet 7 aa a a<br>0.01<br>CL D = 0.01 UTI TINT EU CATT TUTTE ETI TI<br>D = 0.005 R JA(t)  = r (t)  * R JA<br>tt R JA  = 240C/W CT<br>Duty Cycle, D = t1/t2<br>D = Single Pulse<br>0.001 Seticum | EET atiCLT ti-E-EEIIE-TVTIME-th atFEIN aail<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT23<br>All 7°<br>oo H — GAUGE PLANE SOT23<br>0.25 Dim  Min  Max  Typ<br>J A  0.37  0.51  0.40<br>K1 K ee ee ee<br>B  1.20 1.40 1.30<br>sant ee C  2.30  ee 2.50  ee 2.40<br>a D  0.89  1.03  0.915<br>A ' M Af es F  ee 0.45  0.60  0.535<br>L L1 G  1.78  2.05  1.83<br>H  2.80  3.00  2.90<br>o ——— J  0.013  0.10  0.05<br>K  0.890  1.00  0.975<br>‘i = _ ———<br>C B K1  0.903 1.10 1.025<br>L  0.45 0.61  0.55<br>(oa —— L1  0.25 0.55 0.40<br>ryLay ee ——}|—— M  0 ee .085 ee 0.1 ee 50 0.110<br>D a  0°  8°  --<br>All Dimensions in mm<br>F G<br>Z ee ee ee<br>ested Pad Layout yout out<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SOT23<br>Y<br>Dimensions  Value (in mm)<br>| _EyEy C  2.0<br>Y1 C<br>X  0.8<br>X1  1.35<br>Y  0.9<br>Y1  2.9<br>ch! ==<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout yout out** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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Y<br>| _EyEy<br>Y1 C<br>ch!<br>oe<br>L X Ju | X1 J<br>**----- End of picture text -----**<br>


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**2N7002K** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

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2N7002K Document number: DS30896 Rev. 16 - 2 

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