2N7002KDW-TP

Dual MOSFET, Dual N Channel, 60 V, 340 mA, 3 ohm

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Manufacturer: MICRO COMMERCIAL COMPONENTS (MCC)
Product type: Dual MOSFETs
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Channel Type: Dual N Channel
Product Range: -
Qualification: -
Transistor Case Style: SOT-363
Operating Temperature Max: 150°C
Power Dissipation N Channel: 300mW
Power Dissipation P Channel: -
Drain Source Voltage Vds N Channel: 60V
Drain Source Voltage Vds P Channel: -
Continuous Drain Current Id N Channel: 340mA
Continuous Drain Current Id P Channel: -
Drain Source On State Resistance N Channel: 3ohm
Drain Source On State Resistance P Channel: -

Delivery and price
Units per pack	3000
Price	0.016 €
Current stock	10+
Lead time	30 days

Datasheet

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## **Features** 

- ESD Protected Up To 2KV (HBM) 

- Trench MV MOSFET Technology 

- Moisture Sensitivity Level 1 

- Halogen Free. “Green” Device[(][Note][1)] 

- Epoxy Meets UL 94 V-0 Flammability Rating 

- Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) 

## **Maximum Ratings** 

- Operating Junction Temperature Range: -55°C to +150°C 

- Storage Temperature: -55°C to +150°C 

- Thermal Resistance: 416°C/W Junction to Ambient[(Note2)] 

|**Parameter**||**Symbol**|**Rating**|**Unit**|
|---|---|---|---|---|
|Drain-Source Voltage||VDS|60|V|
|Gate-Source Volltage||VGS|±20|V|
|Continuous Drain Current|TA=25°C|ID|340|mA|
||TA=70°C||272||
|Pulsed Drain Current(Note 3)||IDM|1.36|A|
|Total Power Dissipation（Note 4）||PD|300|mW|



Note: 

1. Halogen free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

2. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 

3. Repetitive rating; pulse width limited by max. junction temperature. 

4. PD is based on max. junction temperature, using junction-ambient thermal resistance. 

## **Internal Structure and Marking Code** 

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D1 G2 S2<br>6 5 4<br>6 5 4<br>72 . K<br>1 2 3<br>1 2 3<br>S1 G1 D2<br>Dot denotes Pin1<br>**----- End of picture text -----**<br>


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|||||G|G|SOT-363<br>J<br>~~M~~<br>C<br>B|SOT-363<br>J<br>~~M~~<br>C<br>B|SOT-363<br>J<br>~~M~~<br>C<br>B|
|---|---|---|---|---|---|---|---|---|
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|||||A<br>H|||||
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|||K||D|||||
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|||||D||IMENSIONS|||
||DIM|||INCHES||MM||NOTE|
||||MIN||MA|X<br>MIN|MAX||
||A||0.006||0.01|4<br>0.15|0.35||
||B||0.045||0.05|3<br>1.15|1.35||
||C||0.079||0.09|6<br>2.00|2.45||
||D||0.026|||0.65||TYP.|
||G||0.047||0.05|5<br>1.20|1.40||
||H||0.071||0.08|7<br>1.80|2.20||
||J||-----||0.00|4<br>-----|0.10||
||K||0.031||0.04|3<br>0.80|1.10||
||L||0.010||0.01|8<br>0.26|0.46||
||M||0.003||0.00|6<br>0.08|0.15||
||||||||||



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## **Electrical Characteristics  @ 25°C (Unless Otherwise Specified)** 

|**Parameter**|**Symbol**|**Test   conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|**Static Characteristics**|||||||
|Drain-Source Breakdown Voltage|V(BR)DSS|VGS=0V, ID=250µA|60|||V|
|Gate-Threshold Voltage|VGS(th)|VDS=VGS, ID=1mA|1.0|1.5|2.5|V|
|Zero Gate Voltage Drain Current|IDSS|VDS=48V, VGS=0V|||1|µA|
|Gate-Body Leakage Current|IGSS|VGS=±20V, VDS=0V|||±10|µA|
|Drain-Source On-Resistance|RDS(on)|VGS=10V, ID=500mA||2.1|3|Ω|
|||VGS=4.5V, ID=200mA||2.2|4||
|Forward Transconductance|gFS|VDS=5V, ID=300mA||300||mS|
|Gate Resistance|Rg|f=1 MHz, Open drain||130||Ω|
|**Diode Characteristics**|||||||
|Continuous Body Diode Current|IS||||0.34|A|
|Diode Forward Voltage|VSD|VGS=0V, IS=300mA|||1.3|V|
|Reverse Recovery Time|trr|IF=300mA, dIF/dt=100A/μs||11||ns|
|Reverse Recovery Charge|Qrr|||2.6||nC|
|**Dynamic Characteristics**|||||||
|Input Capacitance|Ciss|VDS=10V,VGS=0V,f=1MHz||16||pF|
|Output Capacitance|Coss|||4.4|||
|Reverse Transfer Capacitance|Crss|||3|||
|Total Gate Charge|Qg|VDS=30V,VGS=10V,ID=300mA||0.88||nC|
|Gate-Source Charge|Qgs|||0.15|||
|Gate-Drain Charge|Qgd|||0.25|||
|Turn-On  Delay Time|td(on)|VDD=30V,VGS=10V,<br>RG=50Ω,RL=250Ω||3||ns|
|Turn-On  Rise Time|tr|||4|||
|Turn-Off  Delay Time|td(off)|||11|||
|Turn-Off  Fall Time|tf|||31|||



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## **Curve Characteristics** 

**Fig.1 - Typical Output Characteristics** 

**==> picture [238 x 160] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.8<br>VGS=10V,9V,8V,7V,6V,5V,4.5V<br>0.7 VGS=4V VGS=3.5V<br>0.6<br>0.5<br>0.4 VGS=3V<br>0.3<br>0.2 VGS=2.5V<br>0.1<br>0.0<br>0 1 2 3 4 5<br>Drain To Source Voltage (V)<br>Drain Current (A)<br>**----- End of picture text -----**<br>


**==> picture [233 x 410] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.3 - RDS(ON) - VGS<br>7<br>ID=0.5AD=0.5A=0.5A<br>6<br>5<br>4<br>3<br>2<br>25℃℃<br>1<br>0<br>0 2 4 6 8 10<br>Gate To Source Voltage (V)<br>Fig.5 - Capacitance Characteristics<br>100<br>C iss<br>10<br>C oss<br>Crss<br>1<br>0 10 20 30 40 50 60<br>Drain To Source Voltage (V)<br>Drain-Source On-Resistance (Ω)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>


**==> picture [235 x 160] intentionally omitted <==**

**----- Start of picture text -----**<br>
7<br>ID=0.5AD=0.5A=0.5A<br>6<br>5<br>4<br>3<br>2<br>25℃℃<br>1<br>0<br>0 2 4 6 8 10<br>Gate To Source Voltage (V)<br>Drain-Source On-Resistance (Ω)<br>**----- End of picture text -----**<br>


**Fig.2 - Transfer Characteristic** 

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**----- Start of picture text -----**<br>
0.8<br>VDS=5V<br>0.7<br>25℃<br>0.6 150℃<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0<br>0 1 2 3 4 5<br>Gate To Source Voltage (V)<br>Drain Current (A)<br>**----- End of picture text -----**<br>


**==> picture [260 x 199] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.4 - RDS(ON) - ID<br>5<br>4<br>3<br>VGS=4.5V<br>2<br>VGS=10V<br>1<br>0 0.2 0.4 0.6 0.8 1<br>Drain Current (A)<br>Drain-Source On-Resistance (Ω)<br>**----- End of picture text -----**<br>


**Fig.6 - Gate Charge** 

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**----- Start of picture text -----**<br>
10<br>VDS=30V<br>ID=0.3A<br>8<br>6<br>4<br>2<br>0<br>0.0 0.2 0.4  0.6 0.8 1.0<br>Gate Charge(nC)<br>V)<br>（<br>Gate-Source Voltage<br>**----- End of picture text -----**<br>


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## **Curve Characteristics** 

**Fig.7 - Normalized Threshold Voltage** 

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**----- Start of picture text -----**<br>
1.4<br>1.2<br>ID=1mA<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Junction Temperature(℃)<br>VGS(th) - Threshold Voltage Normalized<br>**----- End of picture text -----**<br>


**Fig.9 - IS - VSD** 

**==> picture [237 x 160] intentionally omitted <==**

**----- Start of picture text -----**<br>
2<br>VGS=0V<br>1<br>150℃<br>25℃<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>Source To Drain Voltage (V)<br>Source Current (A)<br>**----- End of picture text -----**<br>


**Fig.8 - Normalized On Resistance Characteristics** 

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**----- Start of picture text -----**<br>
2.5<br>VGS=10V<br>ID= 0.5A<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Junction Temperature(℃)<br>Fig.10 - Drain Current<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0<br>0 25 50 75 100 125 150<br>TA Temperature (℃)<br>Normalized On Resistance<br>Drain Current(A)<br>**----- End of picture text -----**<br>


**Fig.11 - PD Dissipation** 

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**----- Start of picture text -----**<br>
0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0<br>0 25 50 75 100 125 150<br>TA Temperature (℃)<br>Power Dissipation (W)<br>**----- End of picture text -----**<br>


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## **Curve Characteristics** 

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**----- Start of picture text -----**<br>
Fig.12 - Safe Operation Area<br>10<br>1 10us<br>R Limited<br>DS(on)<br>100us<br>0.1<br>1ms<br>DC 10ms<br>100ms<br>0.01<br>TJ(MAX)=150 ℃ 1s<br>T A =25°C 10s<br>Single Pulse<br>0.001<br>0.1 1 10 100 300<br>Drain-Source Voltage (V)<br>Fig.13 - Normalized Transient Thermal Impedance<br>10<br>D=Ton/T In descending order<br>TJ,PK=T A +Pdm·Zθj A ·Rθj A D=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse<br>1 RθJA=416°C/W<br>0.1<br>0.01<br>Single Pulse<br>P DM<br>0.001<br>Ton<br>T<br>0.0001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>Pulse Width(s)<br>Drain Current (A)<br>Thermal Resistance<br>Zth(J-A) Normalized Transient<br>**----- End of picture text -----**<br>


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|**Device**|**Packing**|
|---|---|
|Part Number-TP|Tape&Reel: 3Kpcs/Reel|
|Part Number-13P|Tape&Reel: 10Kpcs/Reel|
|Part Number-TPQ2|Tape&Reel:3Kpcs/Reel|



- For packaging details, go to our website at https://www.mccsemi.com/pdf/ProductPackaging/SOT 363%20Package.pdf 

## *****IMPORTANT NOTICE***** 

## _**Micro Commercial Components Corp**_ 

_**Micro Commercial Components**_ 

## _**Corp**_ 

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MCCSEMI.COM 

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Updated at April 29, 2026

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