2N7002H-7

**2N7002H N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**V(BR)DSS**|**RDS(ON) max**|**ID max**<br>**TA = +25°C**|
|---|---|---|
|60V|7.5Ω @ VGS= 5V|210mA|



## **Features and Benefits** 

- N-Channel MOSFET 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Small Surface Mount Package 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q101, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at** 

   - 

   - **https://www.diodes.com/products/automotive/automotive products/.** 

- **This part is qualified to JEDEC standards (as references in AEC-Q101) for High Reliability.** 

- **https://www.diodes.com/quality/product-definitions/** 

## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

## **Mechanical Data** 

   - Case: SOT23 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- Motor Control 

- Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 

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 Power Management Functions  Solderable per MIL-STD-202, Method 208<br> Terminal Connections: See Diagram<br> Weight: 0.008 grams (Approximate)<br>D<br>SOT23<br>D<br>G<br>S G S<br>s OS<br>Top View  Equivalent Circuit  Top View<br>Ordering Informationg Information Information (Note 3)<br>Part Number Case Packaging<br>2N7002H-7  SOT23  3,000/Tape & Reel<br>2N7002H-13  SOT23  10,000/Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Informationg Information Information** (Note 3) 

- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

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2N7002H Document number: DS38025 Rev. 2 - 2 

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**2N7002H** 

## **Marking Information** 

H7H = Product Type Marking Code **H7H** YM = Date Code Marking Y or Y = Year (ex: B = 2014) M = Month (ex: 9 = September) 

|Date Code Key<br>**Year**<br>**2014**<br>**2015**<br>**2016**<br>**2017**<br>**Code**<br>B<br>C<br>D<br>E<br>~~[_-——} ——} ——} ——} ——_} ~~|Date Code Key<br>**Year**<br>**2014**<br>**2015**<br>**2016**<br>**2017**<br>**Code**<br>B<br>C<br>D<br>E<br>~~[_-——} ——} ——} ——} ——_} ~~|Date Code Key<br>**Year**<br>**2014**<br>**2015**<br>**2016**<br>**2017**<br>**Code**<br>B<br>C<br>D<br>E<br>~~[_-——} ——} ——} ——} ——_} ~~|Date Code Key<br>**Year**<br>**2014**<br>**2015**<br>**2016**<br>**2017**<br>**Code**<br>B<br>C<br>D<br>E<br>~~[_-——} ——} ——} ——} ——_} ~~|Date Code Key<br>**Year**<br>**2014**<br>**2015**<br>**2016**<br>**2017**<br>**Code**<br>B<br>C<br>D<br>E<br>~~[_-——} ——} ——} ——} ——_} ~~|Date Code Key<br>**Year**<br>**2014**<br>**2015**<br>**2016**<br>**2017**<br>**Code**<br>B<br>C<br>D<br>E<br>~~[_-——} ——} ——} ——} ——_} ~~|Date Code Key<br>**Year**<br>**2014**<br>**2015**<br>**2016**<br>**2017**<br>**Code**<br>B<br>C<br>D<br>E<br>~~[_-——} ——} ——} ——} ——_} ~~|Date Code Key<br>**Year**<br>**2014**<br>**2015**<br>**2016**<br>**2017**<br>**Code**<br>B<br>C<br>D<br>E<br>~~[_-——} ——} ——} ——} ——_} ~~|**2018**<br>F<br> ~~——} ~~|**2018**<br>F<br> ~~——} ~~|**2018**<br>F<br> ~~——} ~~||**2019**<br>G<br> ~~——_} ~~|**2019**<br>G<br> ~~——_} ~~|**2019**<br>G<br> ~~——_} ~~|**2020**<br>H<br> ~~——} ~~|**2020**<br>H<br> ~~——} ~~|**2020**<br>H<br> ~~——} ~~|**2020**<br>H<br> ~~——} ~~|**2021**<br>I<br> ~~—~~|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Month**<br>**Jan**<br>**Feb**<br>**Mar**<br>**Apr**<br>**May**<br>**Jun**<br>**Jul**<br>**Aug**<br>**Sep**<br>**Oct**<br>**Nov**<br>**Dec**<br>**Code**<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>O<br>N<br>D<br>~~|~~<br>~~— + — + —~~||||||||||||||||||||
|**Maximum Ratings** (@TA= +25°C, unless otherwise specified.)||||||||||||||||||||
|||||||||||||||||||||
|**Characteristic**||||||||**Symbol**||||**Value**||||||**Units**||
|Drain-Source Voltage||||||||VDSS||||60||60||||V||
|Gate-Source Voltage                                                                   Continuous<br>Pulsed|Gate-Source Voltage                                                                   Continuous<br>Pulsed|Gate-Source Voltage                                                                   Continuous<br>Pulsed|Gate-Source Voltage                                                                   Continuous<br>Pulsed|Gate-Source Voltage                                                                   Continuous<br>Pulsed|Gate-Source Voltage                                                                   Continuous<br>Pulsed|||VGSS||||±20<br>±40||||||V||
|Continuous Drain Current (Note 5) VGS= 10V|||Steady<br>State||TA= +25°C<br>TA= +85°C<br>TA= +100°C|||ID||||170<br>120<br>105||||||mA||
|Continuous Drain Current (Note 6) VGS= 10V|||Steady<br>State||TA= +25°C<br>TA= +85°C<br>TA= +100°C|||ID||||210<br>150<br>135||||||mA||
|Maximum Body Diode Forward Current (Note 6)                        Continuous<br>P||Maximum Body Diode Forward Current (Note 6)                        Continuous<br>P|Maximum Body Diode Forward Current (Note 6)                        Continuous<br>P|Maximum Body Diode Forward Current (Note 6)                        Continuous<br>P|Maximum Body Diode Forward Current (Note 6)                        Continuous<br>Pulsed|||IS||||0.5<br>2||0.5||||A||
|Pulsed Drain Current(10µspulse,dutycycle = 1%)||||||||IDM||||500||||||mA||



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation|(Note 5)|PD|370|mW|
||(Note 6)||510||
|Thermal Resistance, Junction to Ambient|(Note 5)|RJA|341|°C/W|
||(Note 6)||249||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



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2N7002H Document number: DS38025 Rev. 2 - 2 

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**2N7002H** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~es~~|**Symbol**<br>~~es~~|**Min**<br>~~es~~|**Typ**<br>~~es~~|**Max**<br>~~es~~|**Unit**<br>~~es~~|**Test Condition**<br>~~es~~|
|**OFF CHARACTERISTICS(Note 7)**<br>~~es~~|||||||
|Drain-Source Breakdown Voltage<br>~~es~~|BVDSS<br>~~es~~|60<br>~~es~~|<br>~~es~~|<br>~~es~~|V<br>~~es~~|VGS= 0V,ID= 10µA<br>~~es~~|
|Zero Gate Voltage Drain Current<br>~~ee~~|IDSS<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|1.0<br>~~ee~~|µA<br>~~ee~~|VDS= 60V,VGS= 0V<br>~~ee~~|
|Gate-BodyLeakage<br>~~ee~~|IGSS<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|±100<br>~~ee~~|nA<br>~~ee~~|VGS= ±20V,VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~|2.0<br>~~ee~~|<br>~~ee~~|3.0<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= 250µA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~er~~|RDS (ON)<br>~~er~~|<br>~~er~~|3.0<br>~~er~~|7.5<br>~~er~~|Ω<br>~~er~~|VGS= 5.0V,ID= 0.05A<br>~~er~~|
|Diode Forward Voltage<br>~~er~~|VSD<br>~~er~~|<br>~~er~~|0.78<br>~~er~~|1.5<br>~~er~~|V<br>~~er~~|VGS= 0V,IS= 115mA<br>~~er~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**|||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|<br>~~ee~~|26<br>~~ee~~|<br>~~ee~~|pF<br>~~ee~~|VDS= 25V, VGS= 0V<br>f = 1.0MHz<br>~~ee~~|
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|<br>~~ee~~|2.8<br>~~ee~~|<br>~~ee~~|pF<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|<br>~~ee~~|2.1<br>~~ee~~|<br>~~ee~~|pF<br>~~ee~~||
|Total Gate Charge(VGS= 4.5V)<br>~~Cn~~|Qg||352||pC<br>|VDS= 10V, ID= 250mA<br>|
|Gate-Source Charge|Qgs||203||||
|Gate-Drain Charge<br>~~_—~~|Qgd<br>|<br>|123<br>|<br>|||
|Turn-On DelayTime<br>~~_—er~~|tD(on)<br>~~er~~|<br>~~er~~|3.7<br>~~er~~|<br>~~er~~|ns<br>~~er~~|VDD= 30V, ID= 0.2A, <br>RL= 150Ω, VGEN= 10V,<br>RGEN= 25Ω<br>~~er~~|
|Turn-On Rise Time<br>~~I~~<br>~~_—er~~|tr<br>~~I~~<br>~~er~~|<br>~~I~~<br>~~er~~|2.9<br>~~I~~<br>~~er~~|<br>~~er~~|||
|Turn-Off DelayTime<br>~~_—er~~|tD(off)<br>~~er~~|<br>~~er~~|8.4<br>~~er~~|<br>~~er~~|||
|Turn-Off Fall Time<br>~~_—er~~|tf<br>~~er~~|<br>~~er~~|4.7<br>~~er~~|<br>~~er~~|||
|BodyDiode Reverse RecoveryTime<br>~~_—~~<br>~~ee~~|trr<br><br>~~ee~~|<br><br>~~ee~~|9.3<br><br>~~ee~~|<br><br>~~ee~~|ns<br><br>~~ee~~|IS= 0.5A,dI/dt = 100A/μs<br><br>~~ee~~|
|BodyDiode Reverse RecoveryCharge<br>~~ee~~|Qrr<br>~~ee~~|<br>~~ee~~|3.5<br>~~ee~~|<br>~~ee~~|nC<br>~~ee~~|IS=0.5A, dI/dt= 100A/μs<br>~~ee~~|



Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

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1.0 0.5<br>0.9 fe VGS = 10V |<br>0.8 V GS  = 8.0V 0.4 V DS  = 5.0V<br>0.7 VGS = 6.0V<br>0.6 0.3<br>VGS = 5.0V<br>0.5<br>0.4 0.2<br>fT eee |i<br>0.3 TA = 150 C<br>0.20.1 PALLET V GS = 3.5V VGSV = 4.5VGS = 4.0V 0.1 7 T A  = 125 C oo TAT = 25 CA = 85 C <br>TA  = -55 C<br>0.0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 1 2 3 4 5 6 7 8<br>V DS, DRAIN -SOURCE VOLTAGE (V) V GS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>10 10<br>9 ee 9 “TEELTIT<br>8 8<br>7 ESE; 7 LT<br>6 ee ee ee A 6 CEEETePC E EP EEE ere<br>5 a 5 OEE<br>4 a 4 OEE<br>3 V GS = 5.0V 3 I D  = 50mA<br>2 2<br>eo a CRE EEE<br>1 KT | | 1 PSE<br>0 0<br>ee ee —CEEEEELLE<br>0 0.1 0.2 0.3 0.4 0.5 0 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN SOURCE CURRENT (A) V GS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage  vs. Gate-Source Voltage<br>5 2.5<br>VGS = 5V<br>4 et 2 TLET EE<br>VID GS= 100mA= 10V<br>3 TA = 150  C 1.5<br>pies TA = 125 C<br>TA = 85 C<br>2<br>TA = 25 C 1 V I D GS  = 50mA  = 5V<br>1 TA = -55 C<br>———=a 0.5 erpT]<br>0<br>0 pf 0.1 ff 0.2 0.3 0.4 0 LET| |)EEE|<br>-50 -25 0 25 50 75 100 125 150<br>IFigure 5 Typical On-Resistance vs. D, DRAIN SOURCE CURRENT (A) T , JUNCTION TEMPERATURE (J C)<br>Drain Current and Temperature  Figure 6 On-Resistance Variation with Temperature<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>, DRAIN CURRENT (A)<br>ID D<br>, DRAIN CURRENT (A)<br>I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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**2N7002H** 

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5<br>4<br>3 V GS = 5V<br>ID = 50mA<br>><br>2<br>VGS = 10V<br>1 I D  = 100mA<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C)<br>Figure 7 On-Resistance Variation with Temperature<br>0.5<br>|<br>0.4<br>0.3 T A = 85 C°<br>T A= 150 C°<br>ke<br>0.2 7 | T A = 25 C<br>T A= 125 C<br>| [4]<br>0.1 | T A= -55 C <br>0 LL)<br>0 0.3 0.6 0.9 1.2 1.5<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current<br>10<br>8 /<br>VDS = 10V<br>6 ID = 250mA VA,<br>4 /<br>20 J/\\ i} 4) yf<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8<br>Qg, TOTAL GATE CHARGE (nC)<br>Figure 11 Gate Charge<br>, SOURCE CURRENT (A)<br>IS<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(on)<br>R<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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5<br>4<br>ID = 250µA<br>3<br>2<br>ID = 1mA<br>1<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C)<br>Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>100<br>f = 1MHz<br>po<br>Po C iss<br>><br>Kt0 fT ff ft<br>10<br>ERR<br>a<br>C oss<br>POSSE<br>iW Nf<br>SeN i<br>C rss<br>1 Pit ti| Ey<br>0 5 10 15 20 25 30 35 40<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10 Typical Junction Capacitance<br>10<br>RDS(on)<br>Limited P W  = 100µs<br>1<br>eee<br>eeSeeseee eee<br>0.1<br>DC<br>PW = 10s<br>P W  = 1s<br>0.01 SAE T J(m ax) = 150°C PW = 100ms ASL<br>T A = 25°C PW = 10ms<br>V GS  = 10V PW = 1ms<br>Single Pulse eeee eee<br>DUT on 1 * MRP Board<br>0.001 Saneall<br>1 10 100<br>VDS , DRAIN-SOURCE VOLTAGE (V)<br>Figure 12 SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>ID<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


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1<br>D = 0.9<br>D = 0.7<br>D = 0.5<br>TaA<br>D = 0.3<br>i<br>OT GP a<br>0.1<br>EC D = 0.1<br>SEert<br>D = 0.05<br>ETHNIC<br>SSHHE A a<br>D = 0.02<br>IRATUUDSCAMORMITATOMRATTIOEROIUNIGNAINTIORRAUTIORBOTT<br>0.01 dl<br>FoeT D = 0.01 a Zha ee<br>EHEC D = 0.005 R JA (t) = r(t) * R JA CUT<br>20 R = 346°C/W aI<br>JA<br>Single Pulse Duty Cycle, D = t1/ t2<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIMES (sec)<br>Figure 15  Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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All 7°<br>“a H i ! -_ ~T™ SOT23<br>GAUGE PLANE<br>0.25 Dim  Min  Max  Typ<br>J A  0.37  0.51  0.40<br>K1 K<br>B  1.20  1.40  1.30<br>| |an a —J C  2.30  2.50  2.40<br>UH ee . 1 a re D  0.89  ee a 1.03  0.915<br>_ A M es F  0.45 0.60 0.535<br>L L1 G  1.78 2.05 1.83<br>aoe — es a<br>i | es H  2.80 3.00 2.90<br>m7 es J  0.013 0.10 0.05<br>——L es K  0.890  1.00  0.975<br>C B ‘ | | | i K1  0.903  1.10  1.025<br>L  0.45  0.61  0.55<br>1 | -—-—|—-—-: | es L1  0.25  0.55  0.40<br>$$ es M  0.085 0.150 0.110<br>r oU - a<br>a 8°<br>D<br>All Dimensions in mm<br>F | G ana l e s e<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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**----- Start of picture text -----**<br>
Y<br>Z | a El |<br>L + C<br>X E<br>**----- End of picture text -----**<br>


|**Dimensions Value**|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|---|
|**Z**||2.9|
|**X**||0.8|
|**Y**||0.9|
|**C**||2.0|
|**E**||1.35|



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**2N7002H** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

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2N7002H Document number: DS38025 Rev. 2 - 2 

October 2019 © Diodes Incorporated