2N7002ET1G

2N7002E 

## Small Signal MOSFET **60 V, 310 mA, Single, N−Channel, SOT−23** 

## **Features** 

- Low RDS(on) 

- Small Footprint Surface Mount Package 

- Trench Technology 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Applications** 

**==> picture [190 x 83] intentionally omitted <==**

**----- Start of picture text -----**<br>
www.onsemi.com<br>V(BR)DSS RDS(on) MAX ID MAX<br>(Note 1)<br>60 V 3.0  @ 4.5 V 310 mA<br>p or 2.5  @ 10 V e<br>**----- End of picture text -----**<br>


- Low Side Load Switch 

- Level Shift Circuits 

**Simplified Schematic** 

- DC−DC Converter 

|•DC−DC Converter|||**Simplified Schematic**|**Simplified Schematic**|**Simplified Schematic**|||
|---|---|---|---|---|---|---|---|
|• DC−DC Converter||||**N−Channel**||||
|• Portable Applications i.e. DSC, PDA, Cell Phone, etc.||||3||||
|**MAXIMUM RATINGS**(TJ= 25°C unless otherwise stated)||||||||
|**Rating**<br>**Symbol**<br>**Value**|**Unit**|||||||
|Drain−to−Source Voltage<br>VDSS<br>60|V||1|||||
|Gate−to−Source Voltage<br>VGS<br>±20|V|||||||
|Drain Current (Note 1)<br>Steady State<br>TA= 25°C<br>TA= 85°C<br>t < 5 s<br>TA= 25°C<br>TA= 85°C<br>ID<br>260<br>190<br>310<br>220<br>mA<br>Power Dissipation (Note 1)<br>Steady State<br>t < 5 s<br>PD<br>300<br>420<br>mW<br>Pulsed Drain Current (tp= 10 s)<br>IDM<br>1.2<br>A<br>Operating Junction and Storage<br>TJ, TSTG<br>−55 to<br>°C<br>2<br>1<br>3<br>~~UL~~<br>~~eee’~~||||703 M<br>**MARKING DIAGRAM**<br>**& PIN ASSIGNMENT**<br>3<br>Drain<br>(Top View)<br>2||||
|Temperature Range<br>+150||**SOT−23**||||||
|Source Current (Body Diode)<br>IS<br>300|mA|**CASE 318**<br>**STYLE 21**||1<br>Gate|||2<br>Source|
|Lead Temperature for Soldering Purposes<br>(1/8″from case for 10 s)<br>TL<br>260<br>°C<br>Stresses exceeding those listed in the Maximum Ratings table may damage the<br>device. If any of these limits are exceeded, device functionality should not be<br>assumed, damage may occur and reliability may be affected.<br>(Note: Microdot may be in either location)<br>~~ee~~<br>~~ee~~|||703<br>M<br>(Note: Microdot may be in either location)<br>||= Device Code<br>= Date Code<br>= Pb−Free Package<br>(Note: Microdot may be in either location)||||



- Portable Applications i.e. DSC, PDA, Cell Phone, etc. 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Junction−to−Ambient − Steady State<br>(Note 1)|R JA|417|°C/W|
|Junction−to−Ambient − t≤5 s (Note 1)|R JA|300||



1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|**ORDERING INFORMATION**|
|---|---|
|**Device**<br>**Package**<br>**Shipping**†<br>2N7002ET1G<br>3000/Tape & Reel<br>SOT−23<br>(Pb−Free)<br>~~—--—~~||
||†For information on tape and reel specifications,|
||including part orientation and tape sizes, please|
||refer to our Tape and Reel Packaging Specifications|
||Brochure, BRD8011/D.|



Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2007 **October, 2016 − Rev. 5** 

**2N7002E/D** 

**2N7002E** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERIST**|**ICS**(TJ= 25°C un|less otherwise specified)|less otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Units**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V,|ID= 250�A|60|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ||||75||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 60 V|TJ= 25°C|||1|�A|
||||TJ= 125°C|||500||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=±20 V||||±100|nA|
|**ON CHARACTERISTICS**(Note 2)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||1.0||2.5|V|
|Negative Threshold Temperature<br>Coefficient|VGS(TH)/TJ||||4.4||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V, ID= 240 mA|||0.86|2.5|�|
|||VGS= 4.5 V, ID= 50 mA|||1.1|3.0||
|Forward Transconductance|gFS|VDS= 5 V, ID= 200 mA|||530||mS|
|**CHARGES AND CAPACITANCES**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1 MHz,<br>VDS= 25 V|||26.7|40|pF|
|Output Capacitance|COSS||||4.6|||
|Reverse Transfer Capacitance|CRSS||||2.9|||
|Total Gate Charge|QG(TOT)|VGS= 5 V, VDS= 10 V;<br>ID= 240 mA|||0.81||nC|
|Threshold Gate Charge|QG(TH)||||0.31|||
|Gate−to−Source Charge|QGS||||0.48|||
|Gate−to−Drain Charge|QGD||||0.08|||
|**SWITCHING CHARACTERISTICS, VGS**|**=  V**(Note 3)|||||||
|Turn−On Delay Time|td(ON)|VGS= 10 V, VDD= 30 V,<br>ID= 200 mA, RG= 10�|||1.7||ns|
|Rise Time|tr||||1.2|||
|Turn−Off Delay Time|td(OFF)||||4.8|||
|Fall Time|tf||||3.6|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 200 mA|TJ= 25°C||0.79|1.2|V|
||||TJ= 85°C||0.7|||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

2. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2% 

3. Switching characteristics are independent of operating junction temperatures 

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**2** 

**2N7002E** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [491 x 619] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0 1.2<br>VGS = 10 V 5.0 V<br>9.0 V 4.5 V<br>1.6 8.0 V<br>4.0 V<br>7.0 V<br>6.0 V 0.8<br>1.2<br>3.5 V<br>0.8 TJ = 25 ° C<br>3.0 V 0.4<br>0.4<br>2.5 V<br>2.0 V TJ = 125 ° C TJ = −55 ° C<br>0 0<br>0 2 4 6 0 2 4 6<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>2.4 2.4<br>VGS = 4.5 V TJ = 125 ° C VGS = 10 V<br>2.0 2.0<br>TJ = 85 ° C TJ = 125 ° C<br>1.6 1.6<br>TJ = 25 ° C TJ = 85 ° C<br>1.2 1.2<br>TJ = 25 ° C<br>TJ = −55 ° C<br>0.8 0.8 TJ = −55 ° C<br>0.4 0.4<br>0 0<br>0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 1.0 1.2<br>ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Drain Current and Figure 4. On−Resistance vs. Drain Current and<br>Temperature Temperature<br>1.6 2.2<br>ID = 0.2 A<br>ID = 250 mA 1.8<br>1.2 VGS = 4.5 V<br>ID = 75 mA<br>1.4 VGS = 10 V<br>0.8<br>1.0<br>0.4 0.6<br>2 4 6 8 10 −50 −25 0 25 50 75 100 125 150<br>VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( ° C)<br>Figure 5. On−Resistance vs. Gate−to−Source Figure 6. On−Resistance Variation with<br>Voltage Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>) �<br>, DRAIN−TO−SOURCE<br>DS(on)<br>R RESISTANCE (NORMALIZED)<br>, DRAIN−TO−SOURCE RESISTANCE (<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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**3** 

**2N7002E** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [247 x 383] intentionally omitted <==**

**----- Start of picture text -----**<br>
40<br>TJ = 25 ° C<br>Ciss VGS = 0 V<br>30<br>20<br>Coss<br>10<br>Crss<br>0<br>0 4 8 12 16 20<br>GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 7. Capacitance Variation<br>10<br>VGS = 0 V<br>1<br>TJ = 85 ° C TJ = 25 ° C<br>0.1<br>0.01<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 9. Diode Forward Voltage vs. Current** 

**==> picture [234 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
5<br>TJ = 25 ° C<br>4 ID = 0.25 A<br>3<br>2<br>1<br>0<br>0 0.2 0.4 0.6 0.8 1<br>Qg, TOTAL GATE CHARGE (nC)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** 

**==> picture [238 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.2<br>1.1<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>-�60 -�20 �20 �60 �100 �140<br>T, TEMPERATURE (°C)<br>VGS(th), THRESHOLD VOLTAGE (NORMALIZED)<br>**----- End of picture text -----**<br>


**Figure 10. Temperature versus Gate Threshold Voltage** 

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**4** 

**2N7002E** 

## **PACKAGE DIMENSIONS** 

**SOT−23 (TO−236)** CASE 318−08 ISSUE AR 

**==> picture [463 x 328] intentionally omitted <==**

**----- Start of picture text -----**<br>
D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>3 THE BASE MATERIAL.<br>o E eat [|] HE T = 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>T 0 ° −−− 10 ° 0 ° −−− 10 °<br>a A1 SIDE VIEW SEE VIEW C c STYLE 21:<br>END VIEW PIN 1. GATE<br>2. SOURCE<br>3. DRAIN<br>RECOMMENDED<br>SOLDERING FOOTPRINT<br>3X<br>2.90 r o 0.90<br>LO \ ct<br>3X 0.80 | LL 0.95<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


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