2N7002E-7-F

**2N7002E** — **N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**V(BR)DSS**|**RDS(ON) max**|**ID max**<br>**TA = +25°C**|
|---|---|---|
|60V|3Ω @ VGS= 10V|300mA|



## **Features and Benefits** 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

## **Description** 

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- Small Surface Mount Package 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

## **Applications** 

- Motor Control 

- Power Management Functions 

- Case: SOT23 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 **e3** 

- Weight: 0.008 grams (approximate) 

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Drain<br>SOT23<br>D<br>Gate<br>G S<br>Source<br>Top View  Top View<br>Pin Out Configuration Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|2N7002E-7-F|SOT23|3,000/Tape &Reel|
|2N7002E-13-F|SOT23|10,000/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

K7B = Product Type Marking Code 

**K7B K7B** YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM       = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or   = Year (ex: A = 2013) Y M = Month (ex: 9 = September) **Chengdu A/T Site Shanghai A/T Site** Date Code Key **Year 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 Code** P R S T U V W X Y Z A B C D E ~~/_ +} | +} — — — —+-S~*~~ **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code** 1 2 3 4 5 6 7 8 9 O N D ~~/——}- —|-—} —}- |} | |} —]N}vYT*~~ 2N7002E 1 of 5 August 2013 Document number: DS30376 Rev. 14 - 2 **www.diodes.com** © Diodes Incorporated 

**2N7002E** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|60|V|
|Drain-Gate Voltage RGS1.0M|||VDGR|60|V|
|Gate-Source Voltage                                                                   Continuous<br>Pulsed|||VGSS|±20<br>±40|V|
|Continuous Drain Current (Note 5) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|250<br>200|mA|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|300<br>240|mA|
|Maximum Body Diode Forward Current (Note 6)|||IS|500|mA|
|Pulsed Drain Current (10µs pulse, duty cycle = 1%)|||IDM|800|mA|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation|(Note 5)|PD|370|mW|
||(Note 6)||540||
|Thermal Resistance, Junction to Ambient|(Note 5)|RθJA|348|°C/W|
||(Note 6)||241||
|Thermal Resistance, Junction to Case|(Note 6)|RθJC|91||
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to 150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|---|
|||||||||
|**Characteristic**|**Symbol**||**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**<br>~~ee~~||||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|60<br>~~ee~~||70<br>~~ee~~|<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= 10µA<br>~~ee~~|
|Zero Gate Voltage Drain Current<br>@ TC= +25°C<br>@ TC= +125°C<br>~~OO~~|IDSS<br>~~OO~~<br>~~ID~~|<br>~~OO~~<br>~~I~~||<br>~~OO~~<br>~~D~~|1.0<br>500<br>~~OO~~|µA<br>~~OO~~|VDS= 60V, VGS= 0V<br>~~OO~~<br>~~(~~|
|Gate-Body Leakage<br>~~I~~|IGSS<br>~~I~~<br>~~ID~~|<br>~~I~~<br>~~I~~||<br>~~I~~<br>~~D~~|±10<br>~~I~~|nA<br>~~I~~|VGS= ±15V, VDS= 0V<br>~~I~~<br>~~(~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~ID I~~<br>~~D~~<br>~~(~~<br>~~ee~~||||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~|1.0<br>~~ee~~||<br>~~ee~~|2.5<br>~~ee~~|V<br>~~ee~~|VDS= VGS, ID= 250µA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>@ TJ= +25°C<br>~~OT~~|RDS (ON)<br>~~OT~~|<br><br>~~OT~~||1.6<br>2.0<br>~~OT~~|3<br>4<br>~~OT~~|Ω<br>~~OT~~|VGS= 10V, ID= 250mA<br>VGS= 4.5V, ID= 200mA<br>~~OT~~|
|On-State Drain Current|ID(ON)|0.8||1.0||A|VGS= 10V, VDS= 7.5V|
|Forward Transconductance|gFS|80||||mS|VDS=10V, ID= 0.2A|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~Ce~~||||||||
|Input Capacitance<br>~~eee~~|Ciss<br>~~eee~~|<br>~~eee~~||22<br>~~eee~~|50<br>~~eee~~|pF<br>~~eee~~|VDS= 25V, VGS= 0V, f = 1.0MHz<br>~~eee~~|
|Output Capacitance<br>~~eee~~<br>~~——~~|Coss<br>~~eee~~|<br>~~eee~~||11<br>~~eee~~|25<br>~~eee~~|pF<br>~~eee~~||
|Reverse Transfer Capacitance<br>~~eee~~<br>~~——~~|Crss<br>~~eee~~|<br>~~eee~~||2.0<br>~~eee~~|5.0<br>~~eee~~|pF<br>~~eee~~||
|Gate resistance<br>~~——~~<br>~~——~~|Rg<br>~~——~~|||120||Ω<br>~~ee~~|VDS= 0V, VGS= 0V, f = 1.0MHz<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~——~~<br>~~——~~|Qg<br>~~——~~|||223||pC<br>~~ee~~|VDS= 10V, ID= 250mA<br>~~ee~~|
|Gate-Source Charge<br>~~——~~<br>~~——~~|Qgs<br>~~——~~|||82||pC<br>~~ee~~||
|Gate-Drain Charge<br>~~——~~|Qgd<br>~~——~~<br>~~or~~|||178<br>~~ee~~|<br>~~ee~~|pC<br>~~ee~~<br>~~ee~~||
|**SWITCHING CHARACTERISTICS(Note 8)**<br>~~——~~<br>~~ee~~<br>~~or~~<br>~~ee~~||||||||
|Turn-On Delay Time<br>~~——~~<br>~~———~~|tD(ON)<br>~~——~~<br>~~———~~<br>~~or~~|<br>~~———~~||7.0<br>~~———~~<br>~~ee~~|20<br>~~———~~<br>~~ee~~|ns<br>~~ee~~<br>~~———~~<br>~~ee~~|VDD= 30V, ID= 0.2A, <br>RL= 150Ω, VGEN= 10V, RGEN= 25Ω<br>~~ee~~<br>~~———~~|
|Turn-Off Delay Time<br>~~———~~|tD(OFF)<br>~~———~~<br>~~or~~|<br>~~———~~||11<br>~~———~~<br>~~ee~~|20<br>~~———~~<br>~~ee~~|ns<br>~~———~~<br>~~ee~~||



- Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 

   6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 

   7. Short duration pulse test used to minimize self-heating effect. 

   8. Guaranteed by design. Not subject to product testing. 

2 of 5 **www.diodes.com** 

2N7002E Document number: DS30376 Rev. 14 - 2 

August 2013 © Diodes Incorporated 

**2N7002E** 

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1.0 2.0<br>TA = -55°C<br>0.8 1.6<br>0.6 1.2 TA = 25°C<br>TA = 125°C<br>0.4 0.8<br>0.2 0.4<br>fe<br>0 0<br>0 _—S—— 1 2 3 4 5 0 YY 1 2 3 4 5 6 7<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V)<br>Fig. 1  On-Region Characteristics Fig. 2  Drain Current vs. Gate-Source Voltage<br>54 |tL i 54<br>3 \ 3 V GS  = 4.5V<br>2 I D  = 250mA 2<br>wee ID = 75mA<br>VGS = 10V<br>1 oe 1<br>0 0<br>0 2 Pf 4 tf 6 8 10 0 0.2 0.4 0.6 0.8 1.0<br>VGS, GATE TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Fig. 3  On Resistance vs. Gate-Source Voltage Fig. 4  On Resistance vs. Drain Current<br>5<br>350<br>4<br>300<br>epee<br>3 of]. V GS = 4.5V @ 200mA 4 250 Nene<br>200<br>2 eee ENE<br>Se 150 \<br>VGS= 10V @ 250mA<br>100<br>ae COON<br>1<br>a COCCNCEE<br>50<br>0 TLEL 0 CCECENEE<br>-75 -50 -25 0 25 50 75 100 125 150 0 25 50 75 100 125 150 175 200<br>TJ, JUNCTION TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)<br>Fig. 5  On-Resistance vs. Junction Temperature Fig. 6 Max Power Dissipation vs. Ambient Temperature<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE CURRENT (A)<br>ID<br>) )<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)<br>, POWER DISSIPATION (mW)<br>D<br>P<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


3 of 5 **www.diodes.com** 

2N7002E Document number: DS30376 Rev. 14 - 2 

August 2013 © Diodes Incorporated 

**2N7002E** 

## **Package Outline Dimensions** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

**==> picture [333 x 163] intentionally omitted <==**

**----- Start of picture text -----**<br>
A SOT23<br>Dim  Min  Max  Typ<br>A  0.37  0.51  0.40<br>B  1.20 1.40 1.30<br>B C<br>C  2.30  2.50  2.40<br>D  0.89  1.03  0.915<br>F  0.45 0.60 0.535<br>an = ===<br>G 1.78 2.05 1.83<br>= H<br>H  2.80 3.00 2.90<br>K M J 0.013 0.10 0.05<br>K1 K  0.903 1.10  1.00<br>D K1  -  -  0.400<br>J F me G fo L ,— — ————FREE L  0.45 0.61  0.55<br>M  0.085 0.18 0.11<br> 0°  8°  -<br>G ) FRE All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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Y<br>Z<br>TE C<br>X E<br>WalonRab<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**Z**|2.9|
|**X**|0.8|
|**Y**|0.9|
|**C**|2.0|
|**E**|1.35|



4 of 5 **www.diodes.com** 

2N7002E Document number: DS30376 Rev. 14 - 2 

August 2013 © Diodes Incorporated 

**2N7002E** 

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2N7002E Document number: DS30376 Rev. 14 - 2 

August 2013 © Diodes Incorporated