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2N7002E,215
Power MOSFET, N Channel, 60 V, 385 mA, 0.78 ohm, SOT-23, Surface Mount
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- Manufacturer: NEXPERIA
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 830mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 830mW
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.78ohm
- Transistor Case Style: SOT-23
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 385mA
- Drain Source On State Resistance: 0.78ohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 15000 |
| Price | 0.028 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**==> picture [49 x 49] intentionally omitted <==** ## **2N7002E** ## **N-channel TrenchMOS FET** **Rev. 03 — 28 April 2006** ## **Product data sheet** ## **1.** ## **1.1 General description** N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. ## **1.2 Features** I Logic level threshold compatible I Surface-mounted package I Very fast switching I TrenchMOS technology ## **1.3 Applications** I Logic level translator I High-speed line driver ## **1.4 Quick reference data** I VDS ≤ 60 V I RDSon ≤ 3 Ω I ID ≤ 385 mA I Ptot ≤ 0.83 W ## **2. Pinning information** ## **Table 1: Pinning** |**Pin**|**Description**|**Simplifed outline**||||||**Symbol**|||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---| |1|gate (G)||||||||||||| |2|source (S)||||3||||||D||| |3|drain (D)||||||||G||||| |||1||||2|||||||| ||||||**SOT23**||||mbb076||S||| **==> picture [243 x 104] intentionally omitted <==** **2N7002E** **Philips Semiconductors** **N-channel TrenchMOS FET** ## **3. Ordering information** ## **Table 2: Ordering information** |**Type number**|**Package**|**Package**|**Package**| |---|---|---|---| ||**Name**|**Description**|**Version**| |2N7002E|TO-236AB<br>plastic surface-mounted package; 3 leads<br>SOT23||| ## **4. Limiting values** ## **Table 3: Limiting values** In accordance with the Absolute Maximum Rating System (IEC 60134). |**Symbol**|**Parameter**|**Conditions**||||||||**Min**|**Max**|**Unit**| |---|---|---|---|---|---|---|---|---|---|---|---|---| |VDS|drain-source voltage|25°C≤Tj≤150|°C|||||||-|60|V| |VDGR|drain-gate voltage (DC)|25°C≤Tj≤150|°C; RGS= 20|||kΩ||||-|60|V| |VGS|gate-source voltage|||||||||-|±30|V| |VGSM|peak gate-source voltage|tp≤50µs; pulsed; duty||cycle|= 25 %|||||-|±40|V| |ID|drain current|Tsp= 25°C; VGS|= 10 V; see||Figure||2and||3|-|385|mA| |||Tsp= 100°C; VGS= 10||V; see||Figure||2||-|245|mA| |IDM|peak drain current|Tsp= 25°C; pulsed; tp≤10µs; see|||||Figure||3|-|1.5|A| |Ptot|total power dissipation|Tsp= 25°C; see|Figure|1||||||-|0.83|W| |Tstg|storage temperature|||||||||−65|+150|°C| |Tj|junction temperature|||||||||−65|+150|°C| |**Source-drain diode**||||||||||||| |IS|source current|Tsp= 25°C||||||||-|385|mA| |ISM|peak source current|Tsp= 25°C; pulsed; tp≤10µs||||||||-|1.5|mA| © Koninklijke Philips Electronics N.V. 2006. All rights reserved. 2N7002E_3 **Product data sheet** **Rev. 03 — 28 April 2006** **2 of 12** **2N7002E** **Philips Semiconductors** **N-channel TrenchMOS FET** **==> picture [497 x 278] intentionally omitted <==** **----- Start of picture text -----**<br> 03aa17 03aa25<br>120 120<br>Pder Ider<br>(%) (%)<br>80 80<br>40 40<br>0 0<br>0 50 100 150 200 0 50 100 150 200<br>Tsp (°C) Tsp (°C)<br>Pder = ------------------------ PtotP ( tot25 ° C ) × 100 % I der = ------------------- I D ( I25D ° C - ) × 100 %<br>Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a<br>function of solder point temperature function of solder point temperature<br>**----- End of picture text -----**<br> **==> picture [481 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> 03ai10<br> 10<br>ID<br>(A)<br>Limit RDSon = VDS / ID<br>tp = 10 µ s<br> 1<br>100 µ s<br>10 [-1]<br>1 ms<br>DC<br>10 ms<br>100 ms<br>10 [-2]<br> 1 10 10 [2]<br>VDS (V)<br>Tsp = 25 °C; IDM is single pulse<br>**----- End of picture text -----**<br> **Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage** © Koninklijke Philips Electronics N.V. 2006. All rights reserved. 2N7002E_3 **Product data sheet** **Rev. 03 — 28 April 2006** **3 of 12** **2N7002E** **Philips Semiconductors** **N-channel TrenchMOS FET** ## **5. Thermal characteristics** ## **Table 4: Thermal characteristics** |**Symbol**|**Parameter**|**Conditions**|**Conditions**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---|---|---| |Rth(j-sp)|thermal resistance from junction to solder point|see|Figure|4||-|-|150|K/W| |Rth(j-a)|thermal resistance from junction to ambient||||[1]|-|-|350|K/W| - [1] Mounted on a printed-circuit board; minimum footprint; vertical in still air **==> picture [481 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 003aab358<br> 10 [3]<br>Zth(j-sp)<br> (K/W)<br> 10 [2]<br>δ = 0.5<br>0.2<br>0.1<br> 10 0.05<br>0.02<br>single pulse<br> 1<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10<br>tp (s)<br>**----- End of picture text -----**<br> **Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration** © Koninklijke Philips Electronics N.V. 2006. All rights reserved. 2N7002E_3 **Product data sheet** **Rev. 03 — 28 April 2006** **4 of 12** **2N7002E** **N-channel TrenchMOS FET** ## **Philips Semiconductors** ## **6. Characteristics** |**6.**<br>**Characteristics**|| |---|---| |**Table 5:**<br>**Characteristics**<br>Tj= 25°C unless otherwise specified.|| |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |**Static characteristics**|| |V(BR)DSS drain-source breakdown<br>voltage|ID= 10µA; VGS= 0 V| ||Tj= 25°C<br>60<br>-<br>-<br>V| ||Tj=−55°C<br>55<br>-<br>-<br>V| |VGS(th)<br>gate-source threshold voltage|ID= 0.25 mA; VDS= VGS; see<br>Figure<br>9and<br>10| ||Tj= 25°C<br>1<br>2<br>2.5<br>V| ||Tj= 150°C<br>0.6<br>-<br>-<br>V| ||Tj=−55°C<br>-<br>-<br>2.75<br>V| |IDSS<br>drain leakage current|VDS= 48 V; VGS= 0 V| ||Tj= 25°C<br>-<br>-<br>1<br>µA| ||Tj= 150°C<br>-<br>-<br>10<br>µA| |IGSS<br>gate leakage current|VGS=±15 V; VDS= 0 V<br>-<br>10<br>100<br>nA| |RDSon<br>drain-source on-state<br>resistance|VGS= 10 V; ID= 500 mA; see<br>Figure<br>6and<br>8| ||Tj= 25°C<br>-<br>0.78<br>3<br>Ω| ||Tj= 150°C<br>-<br>1.45<br>5.5<br>Ω| ||VGS= 4.5 V; ID= 75 mA; see<br>Figure<br>6and<br>8<br>-<br>1.2<br>4<br>Ω| |**Dynamic characteristics**|| |QG(tot)<br>total gate charge|ID= 300 mA; VDS= 30 V; VGS= 10 V;<br>see<br>Figure<br>11and<br>12<br>-<br>0.69<br>-<br>nC<br>-<br>0.1<br>-<br>nC<br>-<br>0.27<br>-<br>nC| |QGS<br>gate-source charge|| |QGD<br>gate-drain charge|| |Ciss<br>input capacitance|VGS= 0 V; VDS= 10 V; f = 1 MHz;<br>see<br>Figure<br>14<br>-<br>31<br>50<br>pF<br>-<br>6.8<br>30<br>pF<br>-<br>3.5<br>10<br>pF| |Coss<br>output capacitance|| |Crss<br>reverse transfer capacitance|| |ton<br>turn-on time|VDS= 50 V; RL= 250Ω; VGS= 10 V;<br>RG= 50Ω; RGS= 50Ω<br>-<br>2.5<br>10<br>ns<br>-<br>11<br>15<br>ns| |toff<br>turn-off time|| |**Source-drain diode**|| |VSD<br>source-drain voltage|IS= 300 mA; VGS= 0 V; see<br>Figure<br>13<br>-<br>0.85<br>1.5<br>V| |trr<br>reverse recovery time|IS= 300 mA; dIS/dt =−100 A/µs; VGS= 0 V<br>-<br>30<br>-<br>ns<br>-<br>30<br>-<br>nC| |Qr<br>recovered charge|| © Koninklijke Philips Electronics N.V. 2006. All rights reserved. 2N7002E_3 **Product data sheet** **Rev. 03 — 28 April 2006** **5 of 12** **2N7002E** **Philips Semiconductors** **N-channel TrenchMOS FET** **==> picture [481 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> 03ai12 03ai14<br>1 5000<br>10 5<br>ID RDSon<br>(A) (mΩ) VGS (V) = 4<br>0.8 4000<br>4.5<br>0.6 3000<br>4.5<br>4<br>0.4 2000<br>5<br>0.2 VGS (V) = 3.5 1000<br>10<br>0 0<br>0 0.5 1 1.5 2 0 0.2 0.4 0.6 0.8 1<br>VDS (V) ID (A)<br>Tj = 25 °C Tj = 25 °C<br>**----- End of picture text -----**<br> **Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values** **Fig 6. Drain-source on-state resistance as a function of drain current; typical values** **==> picture [481 x 257] intentionally omitted <==** **----- Start of picture text -----**<br> 03ai16 03aa28<br>1 2.4<br>ID<br>(A) a<br>0.8<br>1.8<br>0.6<br>1.2<br>0.4<br>Tj = 150 °C 25 °C<br>0.6<br>0.2<br>0 0<br>0 2 4 6 -60 0 60 120 180<br>VGS (V) Tj (°C)<br>Tj = 25 °C and 150 °C; VDS > ID × RDSon a = ------------------------------ RDSon<br>R °<br>DSon ( 25 C )<br>Fig 7. Transfer characteristics: drain current as a Fig 8. Normalized drain-source on-state resistance<br>function of gate-source voltage; typical values factor as a function of junction temperature<br>**----- End of picture text -----**<br> **Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values** © Koninklijke Philips Electronics N.V. 2006. All rights reserved. 2N7002E_3 **Product data sheet** **Rev. 03 — 28 April 2006** **6 of 12** **2N7002E** **Philips Semiconductors** **N-channel TrenchMOS FET** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 003aab101<br>3<br>VGS(th) max<br>(V)<br>typ<br>2<br>min<br>1<br>0<br>-60 0 60 120 180<br>Tj (°C)<br>**----- End of picture text -----**<br> ## ID = 0.25 mA; VDS = VGS **Fig 9. Gate-source threshold voltage as a function of junction temperature** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 003aab359<br>10<br>VGS ID = 0.3 A<br>(V) Tj = 25 °C<br>8 VDS = 30 V<br>6<br>4<br>2<br>0<br>0 0.2 0.4 0.6 0.8<br>QG (nC)<br>**----- End of picture text -----**<br> **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 003aab100<br>10 [-3]<br>ID<br>(A)<br>10 [-4]<br>min typ max<br>10 [-5]<br>10 [-6]<br>0 1 2 3<br>VGS (V)<br>**----- End of picture text -----**<br> ## Tj = 25 °C; VDS = 5 V **Fig 10. Sub-threshold drain current as a function of gate-source voltage** **==> picture [162 x 160] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>ID<br>VGS(pl)<br>VGS(th)<br>VGS<br>QGS1 QGS2<br>QGS QG D<br>QG(tot)<br>003aaa508<br>**----- End of picture text -----**<br> ID = 0.3 A; VDS = 30 V **Fig 11. Gate-source voltage as a function of gate charge; typical values** **Fig 12.** © Koninklijke Philips Electronics N.V. 2006. All rights reserved. 2N7002E_3 **Product data sheet** **Rev. 03 — 28 April 2006** **7 of 12** **2N7002E** **N-channel TrenchMOS FET** ## **Philips Semiconductors** **==> picture [497 x 263] intentionally omitted <==** **----- Start of picture text -----**<br> 03ai17 03ai18<br>1 10 [2]<br>IS<br>(A)<br>0.8 C<br>(pF) Ciss<br>0.6<br> 10<br>0.4<br>Coss<br>0.2 Crss<br>150 °C Tj = 25 °C<br>0 1<br>0.2 0.4 0.6 0.8 1 10 [-1] 1 10 10 [2]<br>VSD (V) VDS (V)<br>Tj = 25 °C and 150 °C; VGS = 0 V VGS = 0 V; f = 1 MHz<br>Fig 13. Source current as a function of source-drain Fig 14. Input, output and reverse transfer capacitances<br>voltage; typical values as a function of drain-source voltage; typical<br>values<br>**----- End of picture text -----**<br> © Koninklijke Philips Electronics N.V. 2006. All rights reserved. 2N7002E_3 **Product data sheet** **Rev. 03 — 28 April 2006** **8 of 12** **2N7002E** **Philips Semiconductors** **N-channel TrenchMOS FET** ## **7. Package outline** ## **Plastic surface-mounted package; 3 leads** **SOT23** **==> picture [478 x 570] intentionally omitted <==** **----- Start of picture text -----**<br> D B E A X<br>HE v M A<br>3<br>Q<br>A<br>A1<br>1 2 c<br>e1 bp w M B Lp<br>e<br>detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A max.A1 bp c D E e e1 HE Lp Q v w<br>1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55<br>mm 0.1 1.9 0.95 0.2 0.1<br>0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC JEITA PROJECTION<br>04-11-04<br> SOT23 TO-236AB<br>06-03-16<br>**----- End of picture text -----**<br> ## **Fig 15. Package outline SOT23** © Koninklijke Philips Electronics N.V. 2006. All rights reserved. 2N7002E_3 **Product data sheet** **Rev. 03 — 28 April 2006** **9 of 12** **2N7002E** **Philips Semiconductors** **N-channel TrenchMOS FET** ## **8. Revision history** **Table 6: Revision history** |**Document ID**|**Release date**<br>**Data sheet status**<br>**Change notice**|**Release date**<br>**Data sheet status**<br>**Change notice**|**Release date**<br>**Data sheet status**<br>**Change notice**|**Doc. number**|**Supersedes**| |---|---|---|---|---|---| |2N7002E_3|20060428<br>Product data sheet<br>-|||-|2N7002E_2| |Modifcations:|**•**|T<br>ab<br>le 5“Char<br>acter<br>istics”:|VGS(th)IDcondition modifed||| ||**•**|T<br>ab<br>le 5“Char<br>acter<br>istics”:|VGS(th)maximum limits modifed||| ||**•**|T<br>ab<br>le 5“Char<br>acter<br>istics”:|RDSontypical values modifed||| ||**•**|T<br>ab<br>le 5“Char<br>acter<br>istics”:|gfsremoved||| ||**•**|T<br>ab<br>le 5“Char<br>acter<br>istics”:|Addition of QG(tot), QGSand QGD||| ||**•**|T<br>ab<br>le 5“Char<br>acter<br>istics”:|Ciss, Cossand Crssvalues modifed||| ||**•**|T<br>ab<br>le 5“Char<br>acter<br>istics”:|tonand tofftypical values modifed||| ||**•**|Figure<br>3,<br>4,<br>5,<br>6,<br>7,<br>9,<br>10,|13and<br>14: modifed||| ||**•**|Figure<br>11: added|||| |2N7002E_2|20050426<br>Product data sheet<br>-|||9397 750 14944|2N7002E-01| |2N7002E-01|20020211<br>Product data||-|9397 750 09095|-| © Koninklijke Philips Electronics N.V. 2006. All rights reserved. 2N7002E_3 **Product data sheet** **Rev. 03 — 28 April 2006** **10 of 12** **2N7002E** **Philips Semiconductors** **N-channel TrenchMOS FET** ## **9. Data sheet status** |**Level**<br>**Data sheet status**|<br>**[1]**<br>**Product status**<br>**[2]**<br>**[3]**<br>**Defnition**| |---|---| |I<br>Objective data|Development<br>This data sheet contains data from the objective specifcation for product development. Philips<br>Semiconductors reserves the right to change the specifcation in any manner without notice.| |II<br>Preliminary data|Qualifcation<br>This data sheet contains data from the preliminary specifcation. Supplementary data will be published<br>at a later date. Philips Semiconductors reserves the right to change the specifcation without notice, in<br>order to improve the design and supply the best possible product.| |III<br>Product data|Production<br>This data sheet contains data from the product specifcation. Philips Semiconductors reserves the<br>right to make changes at any time in order to improve the design, manufacturing and supply. Relevant<br>changes will be communicated via a Customer Product/Process Change Notifcation (CPCN).| [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. ## **10.** extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. **Application information —** Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. **Right to make changes —** Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. ## **12. Trademarks** ## **11. Disclaimers** **Notice —** All referenced brands, product names, service names and trademarks are the property of their respective owners. **TrenchMOS —** is a trademark of Koninklijke Philips Electronics N.V. **Life support —** These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors ## **13. Contact information** For additional information, please visit: **http://www.semiconductors.philips.com** **sales.addresses@www.semiconductors.philips.com** © Koninklijke Philips Electronics N.V. 2006. All rights reserved. 2N7002E_3 **Product data sheet** **Rev. 03 — 28 April 2006** **11 of 12** **2N7002E** **Philips Semiconductors** **N-channel TrenchMOS FET** ## **14. Contents** |**14. **|**Contents**| |---|---| |**1**|**Product profle . . . . . . . . . . . . . . . . . . . . . . . . . . 1**| |1.1|General description. . . . . . . . . . . . . . . . . . . . . . 1| |1.2|Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.4|Quick reference data. . . . . . . . . . . . . . . . . . . . . 1| |**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . 1**| |**3**|**Ordering information . . . . . . . . . . . . . . . . . . . . . 2**| |**4**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2**| |**5**|**Thermal characteristics. . . . . . . . . . . . . . . . . . . 4**| |**6**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5**| |**7**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9**| |**8**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10**| |**9**|**Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11**| |**10**|**Defnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**| |**11**|**Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**| |**12**|**Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**| |**13**|**Contact information . . . . . . . . . . . . . . . . . . . . 11**| **==> picture [109 x 122] intentionally omitted <==** All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. **© Koninklijke Philips Electronics N.V. 2006** **Date of release: 28 April 2006 Document number: 2N7002E_3** **Published in The Netherlands**
Updated at February 9, 2023
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