2N7002DWQ-7-F

**2N7002DW** TT 

**DUAL N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

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ID Max<br>BVDSS RDS(ON) Max<br>TA = +25°C<br>60V  7.5Ω @ VGS = 5V  0.23A<br>**----- End of picture text -----**<br>


## **Description** 

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Features** 

- Dual N-Channel MOSFET 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- Ultra-Small Surface Mount Package 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Notes 3 & 4)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 5)** 

## **Applications** 

## **Mechanical Data** 

- Motor Control 

- Power Management Functions 

- Case: SOT363 

- Case Material:  Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020 

- Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 

- Terminal Connections: See Diagram 

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SOT363<br>Top View<br>**----- End of picture text -----**<br>


- 

- Weight: 0.006 grams (Approximate) 

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D2 G1 S1<br>S2 G2 D1<br>Top View<br>Internal Schematic<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 6) 

|**Ordering Informationg Information Information** (Note 6)|**Ordering Informationg Information Information** (Note 6)|**Ordering Informationg Information Information** (Note 6)|**Ordering Informationg Information Information** (Note 6)|
|---|---|---|---|
|||||
|**Part Number**|**Compliance**|**Case**|**Packaging**|
|2N7002DW-7-F|Standard|SOT363|3,000/Tape &Reel|
|2N7002DWQ-7-F|Automotive|SOT363|3,000/Tape & Reel|
|2N7002DW-13-F|Standard|SOT363|10,000/Tape & Reel|
|2N7002DWQ-13-F|Automotive|SOT363|10,000/Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 

   5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to https://www.diodes.com/quality/product-compliance-definitions/. 

   6. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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K72 = Product Type Marking Code<br>K72 YM<br>YM or YM = Date Code Marking<br>Y or Y = Year (ex: E = 2017)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 1998  1999  2000 2001 2002 2003 2004 … 2017 2018 2019 2020 2021  2022  2023<br>Po Code J  K  L  M  N  P  R  …  E  F  G  H  I  J  K<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>a Code 1  2  3  4  5  6  7  8  9  O  N  D<br>2N7002DW 1 of 5  December 2017<br>Document number: DS30120 Rev. 17 - 2 www.diodes.com   © Diodes Incorporated<br>YM K72<br>**----- End of picture text -----**<br>


**2N7002DW** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|60|V|
|Drain-Gate Voltage RGS1.0M|||VDGR|60|V|
|Gate-Source Voltage|Continuous||VGSS|±20|V|
||Pulsed||VGSS|±40|V|
|Continuous Drain Current (Note 8) VGS= 5V|Steady<br>State|TA= +25C<br>TA= +70C<br>TA= +100C|ID|0.23<br>0.18<br>0.14|A|
|Maximum Continuous BodyDiode Forward Current (Note 8)|||IS|0.53|A|
|Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)|||IDM|0.8|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 7)|TA= +25°C|PD|0.31|W|
||TA= +70°C||0.2||
||TA= +100°C||0.12||
|Thermal Resistance, Junction to Ambient (Note 7)|Steady State|RJA|410|°C/W|
|Total Power Dissipation (Note 8)|TA= +25°C|PD|0.4|W|
||TA= +70°C||0.25||
||TA= +100°C||0.15||
|Thermal Resistance, Junction to Ambient (Note 8)|Steady State|RJA|318|°C/W|
|Thermal Resistance, Junction to Case (Note 8)|Steady State|RJC|135|°C/W|
|Operating and Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

**Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9)** ~~es~~ Drain-Source Breakdown Voltage BVDSS 60 70  V VGS = 0V, ID = 10µA Zero Gate Voltage Drain Current @@ T TC C = +125°C = +25°C IDSS   500 1.0 µA VDS = 60V, VGS = 0V ~~pa~~ Gate-Body Leakage IGSS   ±10 nA VGS = ±20V, VDS = 0V **ON CHARACTERISTICS (Note 9)** Gate Threshold Voltage VGS(TH) 1.0  2.0 V VDS = VGS, ID = 250µA ~~ee~~ Static Drain-Source On-Resistance @@ T TJ J = +125°C = +25°C RDS(ON)  3.2 4.4 13.5 7.5  VVGS GS = 5.0V= 10V,, I IDD = 0.5A  = 0.05A On-State Drain Current ID(ON) 0.5 1.0  A VGS = 10V, VDS = 7.5V ~~a~~ Forward Transconductance gFS 80   mS VDS =10V, ID = 0.2A Diode Forward Voltage ~~a~~ VSD  ~~a~~ 0.78 1.5 V VGS = 0V, IS = 115mA **DYNAMIC CHARACTERISTICS  (Note 10)** Input Capacitance Ciss  22 50 pF Output Capacitance Coss  11 25 pF VDS = 25V, VGS = 0V f = 1.0MHz ~~ee~~ Reverse Transfer Capacitance Crss  2.0 5.0 pF **SWITCHING CHARACTERISTICS  (Note 10)** Turn-On Delay Time tD(ON)  7.0 20 VDD = 30V, ID = 0.2A, ns RL = 150, VGEN = 10V, ~~To~~ Turn-Off Delay Time tD(OFF) ~~I~~  11.0 20 RGEN = 25 Notes: 7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 8. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 

9. Short duration pulse test used to minimize self-heating effect. 

10. Guaranteed by design. Not subject to product testing. 

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**2N7002DW** 

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1.0 7<br>TJ = 25°C<br>6<br>0.8 iZa<br>5<br>7 Ze PT<br>0.6<br>4<br>0.4 itYo 3 ao<br>If vA |__| [___—<br>2<br>0.2 | Za pf<br>1<br>f-=S} sl | Pt tT yt<br>0 ae 0<br>0 | 1 2 3 id 4 5 0 0.2 0.4 0.6 0.8 1.0<br>VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 1  On-Region Characteristics Figure 2  On-Resistance vs. Drain Current<br>2.0 6<br>5<br>1.5<br>Sa A 4 ER<br>VGS = 5.0V, ID  [= 0.05A]<br>1.0 FE 3 ee<br>a aa<br>A 2 S50<br>0.5<br>OY 1 eeeeeeetr<br>0 0<br>-55 -30 -5 20 45 70 95 120 145 0 2 4 6 8 10 12 14 16 18<br>TJ, JUNCTION TEMPERATURE (°C) VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 3  On-Resistance vs. Junction Temperature Figure 4  On-Resistance vs. Gate-Source Voltage<br>1<br>RDS(on)<br>Limited<br>TRCN DC NTII<br>0.1 PW = 10s<br>PW = 1s<br>P W  = 100ms<br>PW = 10ms<br>Ph PW = 1ms INQ<br>0.01<br>P W  =  100 祍 µs<br>FERRE<br>[ei]<br>r= TJ(max [Eee] ) = 11 50 °C 癈 NN<br>T A  =  25 癈 °C<br>Single Pulse<br>0.001 ee1eeeranees<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 5  SOA, Safe Operation Area<br>, NORMALIZED<br>R<br>DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>, NORMALIZED<br>DS(ON)<br>R<br>DRAIN-SOURCE ON-RESISTANCE<br>D<br>, DRAIN CURRENT (A)<br>I<br>DS(ON)<br>, NORMALIZED<br>R<br>DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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**2N7002DW** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT363<br>**----- End of picture text -----**<br>


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SOT363<br>E lam a E1 — Dim  Min  Max  Typ<br>A1  0.00 0.10 0.05<br>A2  0.90 1.00 1.00<br>b  0.10 0.30 0.25<br>c  0.10 0.22  0.11<br>D  1.80 2.20 2.15<br>F E  2.00 2.20 2.10<br>b<br>E1  1.15 1.35 1.30<br>e  0.650 BSC<br>D F  0.40 0.45 0.425<br>L  0.25 0.40 0.30<br>a 0° 8° --<br>All Dimensions in mm<br>A2 Lod<br>c a<br>A1 e |lanl L ————<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT363<br>C<br>Value<br>Dimensions<br>(in mm)<br>C  0.650<br>Y1 P oo, G G  1.300<br>X  0.420<br>Y  0.600<br>Y1  2.500<br>Y<br>coh X e r ==<br>**----- End of picture text -----**<br>


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2N7002DW Document number: DS30120 Rev. 17 - 2 

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**2N7002DW** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2017, Diodes Incorporated 

**www.diodes.com** 

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