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2N7002DWH6327XTSA1
Dual MOSFET, N Channel, 60 V, 60 V, 300 mA, 300 mA, 1.6 ohm
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- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Case Style: SOT-363
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 500mW
- Power Dissipation P Channel: 500mW
- Drain Source Voltage Vds N Channel: 60V
- Drain Source Voltage Vds P Channel: 60V
- Continuous Drain Current Id N Channel: 300mA
- Continuous Drain Current Id P Channel: 300mA
- Drain Source On State Resistance N Channel: 1.6ohm
- Drain Source On State Resistance P Channel: 1.6ohm
| Delivery and price | |
|---|---|
| Units per pack | 7500 |
| Price | 0.04 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**2N7002DW** ## **OptiMOS[™] Small-Signal-Transistor** ## **Product Summary** ## **Features** - Dual N-channel - Enhancement mode - Logic level - Avalanche rated |**Product Summary**|**Product Summary**||| |---|---|---|---| |||60|| |_V_DS|||V| ||||| |||3|| |_R_DS(on),max|_V_GS=10 V||W| ||||| |||4|| ||_V_GS=4.5 V||| ||||| |||0.3|| |_I_D|||A| ||||| - Fast switching - Qualified according to AEC Q101 - 100% lead-free; RoHS compliant - Halogen-free according to IEC61249-2-21 **==> picture [86 x 94] intentionally omitted <==** **----- Start of picture text -----**<br> PG-SOT363<br>6<br>5<br>‘s - 4<br>a<br>ky<br>1<br>2<br>3<br>**----- End of picture text -----**<br> |**Parameter 1)**|**Symbol **|**Conditions**|**Unit**<br>**Value**|**Unit**| |---|---|---|---|---| |Continuous drain current|_I_D|_T_A=25 °C|0.30<br>A|A| |||_T_A=70 °C|0.24|| |Pulsed drain current|_I_D,pulse|_T_A=25 °C|1.2|| |Avalanche energy, single pulse|_E_AS|_I_D=0.3 A,_R_GS=25W|1.3<br>mJ|mJ| |Reverse diode d_v_/d_t_|d_v_/d_t_|_I_D=0.3 A,_V_DS=48 V,<br>d_i_/d_t_=200 A/µs,<br>_T_j,max=150 °C|6<br>kV/µs|kV/µs| |Gate source voltage|_V_GS||±20<br>V|V| |ESD class||JESD22-A114 (HBM)|class 0 (<250V)|| |Power dissipation|_P_tot|_T_A=25 °C|0.5<br>W|W| |Operating and storage temperature|_T_j,_T_stg||-55 ... 150<br>°C|°C| |IEC climatic category; DIN IEC 68-1|||55/150/56|| 1) Remark: one of both transistors in operation. Rev.2.3 page 1 2014-09-19 ||Cinfineon||| |---|---|---|---| ||Cinfineon|**2N7002DW**|| |**Parameter**<br>~~ee~~||**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~ee~~|| ||**Thermal characteristics**||| |Thermal resistance,<br>junction - minimal footprint2)<br>~~—~~||_R_thJA<br>-<br>-<br>250|K/W| ||**Electrical characteristics,**at_T_j=25 °C, unless otherwise specified|=25 °C, unless otherwise specified|| ||**Static characteristics**||| ||Drain-source breakdown voltage<br>Gate threshold voltage<br>Drain-source leakage current|_V_(BR)DSS _V_GS= 0 V,_I_D=250 µA<br>60<br>-<br>-<br>_V_GS(th)<br>_V_DS=VGS,_I_D=250 µA<br>1.5<br>2.1<br>2.5<br>_I_D (off)<br>_V_DS=60 V,_V_GS=-10 V,<br>_T_j=25 °C<br>-<br>-<br>0.1<br>_V_DS=60 V,<br>_V_GS=0 V,_T_j=150 °C<br>-<br>-<br>5<br>~~Pf~~<br>~~fT~~<br>~~ee~~<br>~~ee ee ee~~<br>~~7~~<br>~~tt~~|V<br>µA| ||Gate-source leakage current<br>Drain-source on-state resistance<br>Transconductance|_I_GSS<br>_V_GS=20 V,_V_DS=0 V<br>-<br>1<br>10<br>_R_DS(on)<br>_V_GS=4.5 V,_I_D=0.25 A<br>-<br>2.0<br>4<br>_V_GS=10 V,_I_D=0.5 A<br>-<br>1.6<br>3<br>_g_fs<br>|_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=0.24 A<br>0.2<br>0.36<br>-<br>~~ee~~<br>~~**e**e ee ee~~<br>~~pp~~<br>| ~~tt~~<br>~~eee ee eee~~<br>~~pf~~<br>~~TE~~|nA<br>W<br>S| 2) Perfomed on a 40x40mm2 FR4 PCB with both sided Cu sense-force traces, each 1mm wide, 70μm thick and 20mm long. Rev.2.3 page 2 2014-09-19 ||Cinfineon||||||| |---|---|---|---|---|---|---|---| ||Cinfineon|||||**2N7002DW**|| ||||||||| ||**Parameter**|**Symbol **|**Conditions**||**Values**||**Unit**| |||||**min.**|**typ.**|**max.**|| ||**Dynamic characteristics**||||||| |Input capacitance<br>Output capacitance<br>Reverse transfer capacitance<br>Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time<br>~~——~~||_C_iss<br>_C_oss<br>Crss<br>_t_d(on)<br>_t_r<br>_t_d(off)<br>_t_f|_V_GS=0 V,_V_DS=25 V,<br>_f_=1 MHz<br>_V_DD=30 V,_V_GS=10 V,<br>_I_D=0.5 A,_R_G,ext=6W|-<br>-<br>-<br>-<br>-<br>-<br>-|13<br>4.1<br>2.0<br>3.0<br>3.3<br>5.5<br>3.1|20<br>6<br>3<br>4.5<br>5<br>9<br>5|pF<br>ns| ||Gate Charge Characteristics||||||| ||Gate to source charge|_Q_gs||-|0.05|0.1|nC| ||Gate to drain charge|_Q_gd|_V_DD=48 V,_I_D=0.5 A,|-|0.2|0.4|| ||Gate charge total|_Q_g|_V_GS=0 to 10 V|-|0.4|0.6|| ||Gate plateau voltage|_V_plateau||-|4.0|-|V| ||**Reverse Diode**||||||| ||Diode continous forward current|_I_S||-|-|0.3|A| ||||_T_A=25 °C||||| ||Diode pulse current|_I_S,pulse||-|-|1.2|| ||Diode forward voltage|_V_SD|_V_GS=0 V,_I_F=0.5 A,<br>_T_j=25 °C|-|0.96|1.2|V| ||Reverse recovery time|_t_rr|_V_R=30 V,_I_F=0.5 A,|-|8.5|13|ns| ||Reverse recovery charge|_Q_rr|d_i_F/d_t_=100 A/µs|-|2.4|4|nC| Rev.2.3 page 3 2014-09-19 **2N7002DW** **1 Power dissipation** _P_ tot=f( _T_ A) ## **2 Drain current** _I_ D=f( _T_ A); _V_ GS≥10 V **==> picture [227 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 0.35<br>0.3<br>0.25<br>0.2<br>0.15<br>0.1<br>0.05<br>0<br>0 40 80 120 160<br>T A [°C] [°C]<br> [A]<br>I D<br>**----- End of picture text -----**<br> **==> picture [477 x 624] intentionally omitted <==** **----- Start of picture text -----**<br> 0.5<br>0.3<br>0.4 0.25<br>0.2<br>0.3<br>0.15<br>0.2<br>0.1<br>0.1<br>0.05<br>0 0<br>0 40 80 120 160 0 40 80 120 160<br>T A [°C] T A [°C] [°C]<br>3 Safe operating area 4 Max. transient thermal impedance<br>=f( V DS); ); T A=25 °C; =25 °C; D =0 Z thJA=f( t p)<br>parameter: t p parameter: D = t p/ T<br>10 [1 ] 10 [3 ]<br>limited by on-state<br>resistance<br>1 µs<br>10 [0 ] 0.5<br>10 µs 10 [2 ]<br>0.2<br>100 µs<br>0.1 0.05<br>1 ms<br>10 [-1 ]<br>0.02<br>10 ms single pulse<br>0.01<br>10 [1 ]<br>DC<br>10 [-2 ]<br>10 [-3 ] Sal 10 [0 ]<br>1 10 100 10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10 [0 ] 10 [1 ] 10 [2 ] 10 [3 ]<br>V DS [V] t p [s]<br>page 4 2014-09-19<br> [W]<br> [A]<br>P tot I D<br> [A] [K/W]<br>I D<br>thJA<br>Z<br>**----- End of picture text -----**<br> ## **3 Safe operating area** _I_ D=f( _V_ DS); ); _T_ A=25 °C; =25 °C; _D_ =0 parameter: _t_ p Rev.2.3 **2N7002DW** ## **5 Typ. output characteristics** _I_ D=f( _V_ DS); _T_ j=25 °C parameter: _V_ GS ## **6 Typ. drain-source on resistance** _R_ DS(on)=f( _I_ D); _T_ j=25 °C parameter: _V_ GS **==> picture [463 x 611] intentionally omitted <==** **----- Start of picture text -----**<br> 0.6 6<br>5 V<br>7 V<br>0.5 10 V 5<br>4.5 V<br>2.9 V<br>4 V 3.2 V 3.5 V<br>p ee 4 V<br>0.4 4<br>0.3 3<br>3.5 V 4.5 V<br>0.2 2 5 V 7 V<br>10 V<br>3.2 V<br>0.1 pee 1<br>2.9 V<br>0 -—— 0<br>0 1 2 3 4 5 0 0.1 0.2 0.3 0.4 0.5<br>V DS [V] I D [A]<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>=f( V GS); |); | V DS|>2||>2| I D|| R DS(on)max g fs=f( I D); T j=25 °C<br>0.6 0.5<br>0.45<br>| 7<br>0.5<br>0.4<br>0.35<br>0.4<br>A 0.3 Ee<br>0.3 0.25<br>0.2<br>0.2<br>0.15<br>0.1<br>0.1<br>0.05<br>|<br>0 JA E 0<br>0 1 2 3 4 5 0.00 0.10 0.20 0.30 0.40<br>V GS [V] I D [A]<br>]<br>W<br> [A] [<br>I D DS(on)<br>R<br> [A] [S]<br>I D g fs<br>**----- End of picture text -----**<br> ## **7 Typ. transfer characteristics** _I_ D=f( _V_ GS); |); | _V_ DS|>2||>2| _I_ D|| _R_ DS(on)max Rev.2.3 2014-09-19 page 5 **2N7002DW** ## **9 Drain-source on-state resistance** _R_ DS(on)=f( _T_ j); _I_ D=0.3 A; _V_ GS=10 V ## **10 Typ. gate threshold voltage** _V_ GS(th)=f( _T_ j); _V_ DS=VGS; _I_ D=250 µA parameter: _I_ D **==> picture [209 x 269] intentionally omitted <==** **----- Start of picture text -----**<br> 6.0<br>5.0<br>4.0<br>98 %<br>3.0<br>2.0<br>typ<br>1.0<br>0.0<br>-60 -20 20 60 100 140<br>T j [°C]<br>]<br>[ W<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [210 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 3.2<br>2.8<br>2.4 98 %<br>2<br>typ<br>1.6<br>2 %<br>1.2<br>0.8<br>0.4<br>0<br>-60 -20 20 60 100 140<br>T j [°C]<br> [V]<br>GS(th)<br>V<br>**----- End of picture text -----**<br> ## **11 Typ. capacitances** _C_ =f( _V_ DS); _V_ GS=0 V; _f_ =1 MHz; Tj=25°C ## **12 Forward characteristics of reverse diode** _I_ F=f( _V_ SD) parameter: _T_ j **==> picture [464 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2 ]<br>150 °C, 98%<br>10 [0 ]<br>150 °C<br>25 °C<br>Ciss 25 °C, 98%<br>10 [1 ] 10 [-1 ]<br>Coss<br>10 [-2 ]<br>Crss<br>S ifva<br>10 [0 ] 10 [-3 ]<br>0 10 20 30 0 0.4 0.8 1.2 1.6<br>V DS [V] V SD [V]<br>C [pF] [A] I F<br>**----- End of picture text -----**<br> Rev.2.3 page 6 2014-09-19 **2N7002DW** ## **13Avalanche characteristics** _I AS =f(t AV ); R GS =25_ Ω parameter: TJ(start) ## **14 Typ. gate charge** _V_ GS=f( _Q_ gate); _I_ D=0.5 A pulsed parameter: _V_ DD **==> picture [464 x 611] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [0 ] 10<br>9<br>=e -——|—|—_<br>SS 8 FA<br>10 [-1 ] 25 °C 30 V<br> Sa ti pF<br>~ 100 °C 7 TP<br>125 °C 12 V<br>6 48 V<br>10 [-2 ] 5 7) | i —<br>4 os/ ||<br>3 —-+—_}+—_<br>10 [-3 ]<br>10 [0 ] 10 [1 ] 10 [2 ] 10 [3 ] 2 +--+ ++ + |+ 4<br>1 [+++ ++ 4<br>0<br>0 0.1 0.2 0.3 0.4 0.5<br>t AV [µs] Q gate [nC]<br>15 Drain-source breakdown voltage<br> BR(DSS)=f(=f( T j); ); I D=250 µA=250 µA<br>70<br>65<br>60<br>55<br>50<br>-40 0 40 80 120 160<br>T j [°C]<br> [A] [V]<br>I AV GS<br>V<br> [V]<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br> ## **15 Drain-source breakdown voltage** _V_ BR(DSS)=f(=f( _T_ j); ); _I_ D=250 µA=250 µA Rev.2.3 2014-09-19 page 7 **2N7002DW** ## **SOT363** ## **Package Outline:** ## **Footprint:** **Packing:** **Note: For symmetric types there is no defined Pin 1 orientation in the reel.** Dimensions in mm Rev.2.3 page 8 2014-09-19 **2N7002DW** ## **Published by** **Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.** ## **Legal Disclaimer** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). ## **Warnings** Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.3 page 9 2014-09-19
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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