2N7002DW-TP

**2N7002DW** 

## **Features** 

- High Density Cell Design For Low RDS(ON) 

- Voltage Controlled Small Signal Switch 

- Epoxy Meets UL 94 V-0 Flammability Rating 

- Moisture Sensitivity Level 1 

- Halogen Free. “Green” Device[(Note1)] 

- Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) 

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DUAL<br>N-CHANNEL<br>MOSFET<br>**----- End of picture text -----**<br>


## **Maximum Ratings** 

- Operating Junction Temperature Range : -55°C to +150°C 

- Storage Temperature Range: -55°C to +150°C 

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SOT-363<br>**----- End of picture text -----**<br>


- Thermal Resistance:415°C/W Junction to Ambient(Steady-State)[(Note2)] 

|**Parameter**||**Symbol**|**Rating**|**Unit**|
|---|---|---|---|---|
|Drain-Source Voltage||VDS|60|V|
|Gate-Source Volltage||VGS|±20|V|
|Continuous Drain Current|TA=25°C|ID|340|mA|
||TA=100°C||215||
|Pulsed Drain Current(Note3)||IDM|1.36|A|
|Total Power Dissipation(Note4)||PD|300|mW|



Note: 

1. Halogen free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

2. The value of RθJA is measured with the device mounted on 1in[2] FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA t��10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. 

3. Repetitive rating; pulse width limited by max. junction temperature. 

4. PD is based on max. junction temperature, using junction-ambient thermal resistance. 

## **Internal Structure and Marking Code** 

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D1 G2 S2<br>6 5 4<br>6 5 4<br>K72<br>1 2 3<br>1 2 3<br>S1 G1 D2 Dot Denotes Pin1<br>**----- End of picture text -----**<br>


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G<br>B C<br>A<br>M<br>H<br>K L<br>J<br>D<br>**----- End of picture text -----**<br>


||||DIMENSIONS|DIMENSIONS|DIMENSIONS||
|---|---|---|---|---|---|---|
||DIM|MIN<br>MAX<br>INCHES||MIN<br>MAX<br>MM||NOTE|
||A|0.006|0.014|0.15|0.35||
||B|0.045|0.053|1.15|1.35||
||C|0.079|0.096|2.00|2.45||
||D|0.026||0.65||TYP.|
||G|0.047|0.055|1.20|1.40||
||H|0.071|0.087|1.80|2.20||
||J|-----|0.004|-----|0.10||
||K|0.0 1<br>3|0.043|0.80|1.10||
||L|0.010|0.018|0.26|0.46||
||M|0.003|0.006|0.08|0.15||
|||**SUGGESTED SOLDER PAD LAYOUT**|||||



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## **Electrical Characteristics  @ 25°C (Unless Otherwise Specified)** 

|**Parameter**|**Symbol**|**Test   Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|**Static Characteristics**|||||||
|Drain-Source Breakdown Voltage|V(BR)DSS|VGS=0V, ID=250µA|60|||V|
|Gate-Source Leakage Current|IGSS|VDS=0V, VGS=±20V|||±10|nA|
|Zero Gate Voltage Drain Current|IDSS|VDS=60V, VGS=0V|||80||
|Gate-Threshold Voltage|VGS(th)|VDS=VGS, ID=250µA|1.0|1.5|2.5|V|
|Drain-Source On-Resistance|RDS(on)|VGS=10V, ID=300mA||1.1|2.5|Ω|
|||VGS=4.5V, ID=200mA||1.3|3||
|Forward Transconductance|gfs|VDS=10V, ID=200mA|80|||ms|
|Gate Resistance|Rg|F=1 MHz, Open drain||4.1||Ω|
|**Diode Characteristics**|||||||
|Continuous Body Diode Current|IS||||115|mA|
|Diode Forward Voltage|VSD|VGS=0V, IS=115mA|0.55||1.2|V|
|Reverse Recovery Time|trr|IF=0.5A, dIF/dt=100A/μs||9.4||ns|
|Reverse Recovery Charge|Qrr|||3.1||nC|
|**Dynamic Characteristics**|||||||
|Input Capacitance|Ciss|VDS=25V,VGS=0V,f=1MHz||25.2||pF|
|Output Capacitance|Coss|||3.5|||
|Reverse Transfer Capacitance|Crss|||2.2|||
|Total Gate Charge|Qg|VDS=25V,VGS=10V,ID=0.5A||1.1||nC|
|Gate-Source Charge|Qgs|||0.19|||
|Gate-Drain Charge|Qgd|||0.25|||
|Turn-On  Delay Time|td(on)|VDD=25V, VGEN=10V,<br>RGEN=25Ω,IDS=500mA||2.3||ns|
|Turn-On  Rise Time|tr|||2.7|||
|Turn-Off  Delay Time|td(off)|||6.3|||
|Turn-Off  Fall Time|tf|||3|||



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## **Curve Characteristics** 

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Fig. 1 - Typical Output Characteristics<br>1.0<br>TJ=25 ℃ VGS=10V<br>6V<br>5V<br>0.8<br>4V<br>0.6<br>VGS=3V<br>0.4<br>0.2 VGS=2.5V<br>VGS=2V<br>0.0<br>0 1 2 3 4 5<br>Drain To Source Voltage (V)<br>Fig. 3 - RDS(ON) � ID<br>2.0<br>TA=25 ° C<br>Pulsed<br>1.8<br>1.6<br>V GS =4.5V<br>1.4<br>1.2 V GS =10V<br>1.0<br>0.8<br>0.1 0.2 0.3 0.4 0.5  0.6 0.7 0.8 0.9 1.0<br>Drain Current (A)<br>Fig. 5 - IS � VSD<br>1<br>100 ℃ 25 ℃<br>0.1<br>0.01<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>Source To Drain Voltage (V)<br>Drain Current (A)<br>Drain-Source On-Resistance (Ω)<br>Source Current (A)<br>**----- End of picture text -----**<br>


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Fig. 2 - Transfer Characteristics<br>1.0<br>VDS=3V 25°C<br>100°C<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>0 1 2 3 4 5<br>Gate To Source Voltage (V)<br>7 Fig. 4 - RDS(ON) — VGS<br>Pulsed<br>6 I D =0.5A<br>5<br>4<br>3<br>2 TA=125°C<br>1 T A =25°C<br>0<br>0 2 4 6 8 10<br>Gate To Source Voltage(V)<br>Fig. 6 - Threshold Voltage<br>2.0<br>1.8<br>1.6<br>I D = 250μA<br>1.4<br>1.2<br>1.0<br>25 50 75 100 125<br>Junction Temperature  (°C)<br>Drain Current (A)<br>Drain-Source On-Resistance (Ω)<br>Threshold Voltage (V)<br>**----- End of picture text -----**<br>


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## **Curve Characteristics** 

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Fig.7-NormalizedOnResistanceCharacteristics<br>2.4<br>VGS=10V<br>ID=0.3A<br>2.0<br>1.6<br>1.2<br>0.8<br>0.4<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>Junction Temperature(°C)<br>Normalized On Resistance<br>**----- End of picture text -----**<br>


## Fig. 9 - Capacitance Characteristics 

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100<br>C iss<br>10<br>C oss<br>Crss<br>1<br>0 10 20 30 40 50 60<br>Drain To Source Voltage (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>


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Fig. 8 - GateCharge<br>10<br>VDS=25V<br>ID=0.5A<br>8 Tj=25 ℃<br>6<br>4<br>2<br>0<br>0.0 0.3 0.6 0.9 1.2 1.5<br>Gate Charge(nC)<br>Fig. 10 - Current dissipation<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0<br>0 25 50  75  100  125 150<br>TA-ambient Temperature( ℃ )<br>V)<br>（<br>Gate-Source Voltage<br>ID-Drain Current (A)<br>**----- End of picture text -----**<br>


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Fig.11-PowerDissipation<br>**----- End of picture text -----**<br>


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0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0<br>-50 0 50 100 150<br>TJ-Junction Temperature ( ℃ )<br>）<br>W<br>（<br>Ptot-PowerDissipation<br>**----- End of picture text -----**<br>


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## **Curve Characteristics** 

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Fig. 12 - Safe Operation Area<br>10<br>TJ(MAX)=150 ℃<br>T A =25°C<br>Single Pulse<br>1<br>10us<br>R Limited<br>DS(on)  100us<br>0.1 1ms<br>10ms<br>DC<br>0.01<br>1E-3<br>0.1 1 10 100 1000<br>Drain-Source Voltage (V)<br>Drain Current(A)<br>**----- End of picture text -----**<br>


Fig. 13 -Normalized Transient Thermal Impedance 

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10<br>D=Ton/T In descending order<br>T RJ,PKθJA= =T 415A +P °C/WDM ·Z θJA ·R θJA D=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse<br>1<br>0.1<br>0.01 Single Pulse<br>1E-3<br>PDM<br>Ton<br>T<br>1E-4<br>1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000<br>Pulse Width (s)<br>Normalized Transient<br>Zth(J-A) Thermal Resistance<br>**----- End of picture text -----**<br>


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## **Ordering Information** 

|**Device**|**Packing**|
|---|---|
|Part Number-TP|Tape&Reel:3Kpcs/Reel|
|Part Number-TPQ2|Tape&Reel:3Kpcs/Reel|



- For packaging details, go to our website at https://www.mccsemi.com/pdf/ProductPackaging/SOT 363%20Package.pdf 

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