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2N7002CK,215
Power MOSFET, N Channel, 60 V, 300 mA, 1.1 ohm, SOT-23, Surface Mount
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- Manufacturer: NEXPERIA
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 350mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 350mW
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 1.1ohm
- Transistor Case Style: SOT-23
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 300mA
- Drain Source On State Resistance: 1.1ohm
- Gate Source Threshold Voltage Max: 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.048 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**==> picture [49 x 49] intentionally omitted <==** ## **2N7002CK** ## **60 V, 0.3 A N-channel Trench MOSFET** **Rev. 01 — 11 September 2009** ## **Product data sheet** ## **1.** ## **1.1 General description** ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. ## **1.2 Features** - I Logic-level compatible - I Very fast switching - I Trench MOSFET technology - I ESD protection up to 3 kV ## **1.3 Applications** - I Relay driver - I High-speed line driver - I Low-side loadswitch - I Switching circuits ## **1.4 Quick reference data** ## **Table 1. Quick reference data** |**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |VDS|drain-source voltage||-|-|60|V| |ID|drain current||-|-|300|mA| |IDM|peak drain current|single pulse;|-|-|1.2|A| |||tp≤10µs||||| |RDSon|drain-source on-state|VGS= 10 V;|-|1.1|1.6|Ω| ||resistance|ID= 500 mA||||| **==> picture [211 x 101] intentionally omitted <==** **2N7002CK** **NXP Semiconductors** **60 V, 0.3 A N-channel Trench MOSFET** ## **2. Pinning information** |**ormation**|**ormation**| |---|---| |**Table 2.**<br>**Pinning**|| |**Pin**<br>**Symbol**<br>**Description**<br>**Simplifed outline**<br>**Graphic symbol**|| |1<br>G<br>gate<br>2<br>S<br>source<br>3<br>D<br>drain<br>1<br>2<br>3<br>G|017aaa000<br>D<br>S| ## **3. Ordering information** |**formation**|**formation**|**formation**|**formation**| |---|---|---|---| |**Table 3.**<br>**Ordering information**|||| |**Type number**|**Package**||| ||**Name**|**Description**|**Version**| |2N7002CK|TO-236AB<br>plastic surface-mounted package; 3 leads<br>SOT23||| ## **4. Marking** |**Table 4.**|**Marking codes**||| |---|---|---|---| |**Type number**||**Marking**|**cod**~~**e**~~<br>**[1]**| |2N7002CK||LP*|| - [1] * = -: made in Hong Kong - = p: made in Hong Kong - = t: made in Malaysia - = W: made in China © NXP B.V. 2009. All rights reserved. 2N7002CK_1 **Rev. 01 — 11 September 2009** **Product data sheet** **2 of 13** **2N7002CK** **NXP Semiconductors** **60 V, 0.3 A N-channel Trench MOSFET** ## **5. Limiting values** ## **Table 5. Limiting values** In accordance with the Absolute Maximum Rating System (IEC 60134). |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Max**<br>**Unit**| |---|---| |VDS<br>drain-source voltage|25°C≤Tj≤150°C<br>-<br>60<br>V| |VGS<br>gate-source voltage|-<br>±20<br>V| |ID<br>drain current|VGS= 10 V| ||Tamb= 25°C<br>-<br>300<br>mA| ||Tamb= 100°C<br>-<br>190<br>mA| |IDM<br>peak drain current|Tamb= 25°C; tp≤10µs<br>-<br>1.2<br>A| |Ptot<br>total power dissipation|Tamb= 25°C<br>[1] -<br>350<br>mW| |Tj<br>junction temperature|150<br>°C| |Tamb<br>ambient temperature|−55<br>+150<br>°C| |Tstg<br>storage temperature|−65<br>+150<br>°C| |**Source-drain diode**|| |IS<br>source current|Tamb= 25°C<br>-<br>200<br>mA| |ISM<br>peak source current|Tamb= 25°C; tp≤10µs<br>-<br>1.2<br>A| |**ElectroStatic Discharge (ESD)**|| |VESD<br>electrostatic discharge<br>voltage|all pins;<br>human body model;<br>C = 100 pF;<br>R = 1.5 kΩ<br>-<br>3<br>kV| [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm[2] . **==> picture [497 x 273] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa001 017aaa002<br>120 120<br>Pder Ider<br>(%) (%)<br>80 80<br>40 40<br>0 0<br>−75 −25 25 75 125 175 −75 −25 25 75 125 175<br>Tamb (°C) Tamb (°C)<br>Pder = ---------------------- PtotP ( tot25 ° C - ) × 100 % I der = ------------------ I D ( I25D ° C - ) × 100 %<br>Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a<br>function of ambient temperature function of ambient temperature<br>**----- End of picture text -----**<br> © NXP B.V. 2009. All rights reserved. 2N7002CK_1 **Rev. 01 — 11 September 2009** **Product data sheet** **3 of 13** **2N7002CK** **NXP Semiconductors** **60 V, 0.3 A N-channel Trench MOSFET** **==> picture [481 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa003<br>10<br>ID Limit RDSon = VDS/ID<br>(A)<br>tp = 10 µs<br>1<br>100 µs<br>10 [−][1]<br>DC 1 ms<br>10 ms<br>100 ms<br>10 [−][2]<br>10 [−][1] 1 10 10 [2]<br>VDS (V)<br>**----- End of picture text -----**<br> Tsp = 25 °C; IDM = single pulse; VGS = 10 V **Fig 3. Safe operating area; junction to solder point; continuous and peak drain currents as a function of drain-source voltage** **==> picture [481 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa004<br>10<br>ID<br>(A) Limit RDSon = VDS/ID<br>tp = 10 µs<br>1<br>100 µs<br>10 [−][1]<br>1 ms<br>10 ms<br>DC<br>100 ms<br>10 [−][2]<br>10 [−][3]<br>10 [−][1] 1 10 10 [2]<br>VDS (V)<br>**----- End of picture text -----**<br> Tamb = 25 °C; IDM = single pulse; VGS = 10 V **Fig 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage** ## **6. Thermal characteristics** ## **Table 6. Thermal characteristics** |**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---| |Rth(j-a)|thermal resistance from|in free air|[1]|-|350|500|K/W| ||junction to ambient||||||| © NXP B.V. 2009. All rights reserved. 2N7002CK_1 **Rev. 01 — 11 September 2009** **Product data sheet** **4 of 13** **2N7002CK** **NXP Semiconductors** **60 V, 0.3 A N-channel Trench MOSFET** ## **Table 6. Thermal characteristics** …continued |**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |Rth(j-sp)|thermal resistance from||-|-|150|K/W| ||junction to solder point|||||| [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. ## **7. Characteristics** ## **Table 7. Characteristics** Tamb = 25 ° |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---| |**Static characteristics**|| |V(BR)DSS<br>drain-source breakdown<br>voltage|ID= 10µA; VGS= 0 V| ||Tj= 25°C<br>60<br>-<br>-<br>V| ||Tj=−55°C<br>55<br>-<br>-<br>V| |VGS(th)<br>gate-source threshold<br>voltage|ID= 250µA; VDS= VGS;<br>Tj= 25°C<br>1<br>1.75<br>2.5<br>V| |IDSS<br>drain leakage current|VDS= 60 V; VGS= 0 V| ||Tj= 25°C<br>-<br>-<br>100<br>nA| ||Tj= 150°C<br>-<br>-<br>1<br>µA| |IGSS<br>gate leakage current|VGS=±20 V; VDS= 0 V<br>-<br>-<br>5<br>µA| ||VGS=±10 V; VDS= 0 V<br>-<br>50<br>450<br>nA| ||VGS=±5 V; VDS= 0 V<br>-<br>-<br>100<br>nA| |RDSon<br>drain-source on-state<br>resistance|VGS= 4.5 V;<br>ID= 200 mA| ||Tj= 25°C<br>-<br>1.3<br>3<br>Ω| ||Tj= 150°C<br>-<br>2.8<br>4.4<br>Ω| ||VGS= 10 V; ID= 500 mA<br>-<br>1.1<br>1.6<br>Ω| |**Dynamic characteristics**|| |QG(tot)<br>total gate charge|ID= 200 mA;<br>VDS= 10 V;<br>VGS= 4.5 V<br>-<br>1.09<br>1.3<br>nC<br>-<br>0.22<br>-<br>nC<br>-<br>0.23<br>-<br>nC| |QGS<br>gate-source charge|| |QGD<br>gate-drain charge|| |Ciss<br>input capacitance|VGS= 0 V; VDS= 25 V;<br>f = 1 MHz<br>-<br>47.2<br>55<br>pF<br>-<br>11<br>20<br>pF<br>-<br>5<br>7.5<br>pF| |Coss<br>output capacitance|| |Crss<br>reverse transfer<br>capacitance|| |td(on)<br>turn-on delay time|VDS= 15 V;<br>RL= 15Ω;<br>VGS= 10 V;<br>RG= 6Ω<br>-<br>8<br>15<br>ns<br>-<br>8<br>15<br>ns<br>-<br>38<br>50<br>ns<br>-<br>22<br>35<br>ns| |tr<br>rise time|| |td(off)<br>turn-off delay time|| |tf<br>fall time|| |**Source-drain diode**|| |VSD<br>source-drain voltage|IS= 200 mA; VGS= 0 V<br>0.47<br>0.79<br>1.1<br>V| © NXP B.V. 2009. All rights reserved. 2N7002CK_1 **Rev. 01 — 11 September 2009** **Product data sheet** **5 of 13** **2N7002CK** **NXP Semiconductors** **60 V, 0.3 A N-channel Trench MOSFET** **==> picture [497 x 633] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa005 017aaa006<br>1.0 10 [−][3]<br>ID (1) (2) (3)<br>(A) ID<br>0.8 (4) (A)<br>10 [−][4]<br>0.6 (1) (2) (3)<br>(5)<br>0.4<br>10 [−][5]<br>0.2<br>0.0 10 [−][6]<br>0 1 2 3 4 0 1 2 3<br>VDS (V) VGS (V)<br>Tj = 25 °C Tj = 25 °C; VDS = 5 V<br>(1) VGS = 10 V (1) minimum values<br>(2) VGS = 5 V (2) typical values<br>(3) VGS = 4.5 V (3) maximum values<br>(4) VGS = 4 V<br>(5) VGS = 3.5 V<br>Fig 5. Output characteristics: drain current as a Fig 6. Sub-threshold drain current as a function of<br>function of drain-source voltage; typical gate-source voltage<br>values<br>017aaa007 017aaa008<br>2.5 4<br>RDSon RDSon<br>(Ω) (1) (Ω)<br>2.0 3<br>(1)<br>(2)<br>1.5 (3) 2<br>(2)<br>(4)<br>1.0 1 (3)<br>0.5 0<br>0.0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10<br>ID (A) VGS (V)<br>Tj = 25 °C ID = 500 mA<br>(1) VGS = 4 V (1) Tj = 150 °C<br>(2) VGS = 4.5 V (2) Tj = 25 °C<br>(3) VGS = 5 V (3) Tj = −55 °C<br>(4) VGS = 10 V<br>Fig 7. Drain-source on-state resistance as a function Fig 8. Drain-source on-resistance as a function of<br>of drain current; typical values gate-source voltage; typical values<br>**----- End of picture text -----**<br> © NXP B.V. 2009. All rights reserved. 2N7002CK_1 **Rev. 01 — 11 September 2009** **Product data sheet** **6 of 13** **2N7002CK** **NXP Semiconductors** **60 V, 0.3 A N-channel Trench MOSFET** **==> picture [497 x 292] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa009 017aaa010<br>2.4 3<br>a<br>VGS(th) (1)<br>(V)<br>1.8<br>2<br>(2)<br>1.2<br>(3)<br>1<br>0.6<br>0.0 0<br>−60 0 60 120 180 −60 0 60 120 180<br>Tj (°C) Tj (°C)<br>R ID = 0.25 mA; VDS = VGS<br>a = ---------------------------- RDSonDSon ( 25 ° C - ) (1) maximum values<br>(2) typical values<br>(3) minimum values<br>Fig 9. Normalized drain-source on-state resistance Fig 10. Gate-source threshold voltage as a function of<br>factor as a function of junction temperature junction temperature<br>**----- End of picture text -----**<br> **==> picture [322 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa011<br>10 [2]<br>(1)<br>C<br>(pF)<br>(2)<br>10 (3)<br>1<br>10 [−][1] 1 10 10 [2]<br>VDS (V)<br>VGS = 0 V; f = 1 MHz<br>**----- End of picture text -----**<br> (1) Ciss (2) Coss (3) Crss **Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values** © NXP B.V. 2009. All rights reserved. 2N7002CK_1 **Rev. 01 — 11 September 2009** **Product data sheet** **7 of 13** **2N7002CK** **NXP Semiconductors** **60 V, 0.3 A N-channel Trench MOSFET** **==> picture [497 x 292] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa012 017aaa013<br>10 1.0<br>VGS IS<br>(V) (A)<br>8 0.8<br>6 0.6 (1) (2) (3)<br>4 0.4<br>2 0.2<br>0 0.0<br>0.0 0.4 0.8 1.2 0.2 0.4 0.6 0.8 1.0 1.2<br>QG (nC) VSD (V)<br>ID = 200 mA; VDD = 30 V; Tj = 25 °C VGS = 0 V<br>(1) Tj = 150 °C<br>(2) Tj = 25 °C<br>(3) Tj = −55 °C<br>Fig 12. Gate-source voltage as a function of gate Fig 13. Source current as a function of source-drain<br>charge; typical values voltage; typical values<br>**----- End of picture text -----**<br> © NXP B.V. 2009. All rights reserved. 2N7002CK_1 **Product data sheet** **Rev. 01 — 11 September 2009** **8 of 13** **2N7002CK** **NXP Semiconductors** **60 V, 0.3 A N-channel Trench MOSFET** ## **8. Package outline** ## **Plastic surface-mounted package; 3 leads** **SOT23** **==> picture [478 x 570] intentionally omitted <==** **----- Start of picture text -----**<br> D B E A X<br>HE v M A<br>3<br>Q<br>A<br>A1<br>1 2 c<br>e1 bp w M B Lp<br>e<br>detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A max.A1 bp c D E e e1 HE Lp Q v w<br>1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55<br>mm 0.1 1.9 0.95 0.2 0.1<br>0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC JEITA PROJECTION<br>04-11-04<br> SOT23 TO-236AB<br>06-03-16<br>**----- End of picture text -----**<br> ## **Fig 14. Package outline SOT23 (TO-236AB)** © NXP B.V. 2009. All rights reserved. 2N7002CK_1 **Rev. 01 — 11 September 2009** **Product data sheet** **9 of 13** **2N7002CK** **NXP Semiconductors** **60 V, 0.3 A N-channel Trench MOSFET** ## **9. Soldering** **==> picture [397 x 525] intentionally omitted <==** **----- Start of picture text -----**<br> 3.3<br>2.9<br>1.9<br>solder lands<br>solder resist<br>3 1.7 2<br>solder paste<br>0.7 0.6 occupied area<br>(3×) (3×)<br>Dimensions in mm<br>0.5<br>(3×)<br>0.6<br>(3×)<br>1 sot023_fr<br>Fig 15. Reflow soldering footprint SOT23 (TO-236AB)<br>2.2<br>1.2<br>(2×)<br>1.4<br>(2×)<br>solder lands<br>4.6 2.6 solder resist<br>occupied area<br>Dimensions in mm<br>1.4<br>preferred transport direction during soldering<br>2.8<br>4.5 sot023_fw<br>**----- End of picture text -----**<br> **Fig 16. Wave soldering footprint SOT23 (TO-236AB)** © NXP B.V. 2009. All rights reserved. 2N7002CK_1 **Rev. 01 — 11 September 2009** **Product data sheet** **10 of 13** **2N7002CK** **NXP Semiconductors** **60 V, 0.3 A N-channel Trench MOSFET** ## **10. Revision history** |**Table 8.**|**Revision**|**history**|||| |---|---|---|---|---|---| |**Document**|**ID**|**Release date**|**Data sheet status**|**Change notice**|**Supersedes**| |2N7002CK_1||20090911|Product data sheet|-|-| © NXP B.V. 2009. All rights reserved. 2N7002CK_1 **Rev. 01 — 11 September 2009** **Product data sheet** **11 of 13** **2N7002CK** **NXP Semiconductors** **60 V, 0.3 A N-channel Trench MOSFET** ## **11. Legal information** ## **11.1 Data sheet status** |**Document statu**|**s**<br>**[1]**<br>**[2]**<br>**Product status**<br>**[3]**<br>**Defnition**| |---|---| |Objective [short] data sheet<br>Development<br>This document contains data from the objective specifcation for product development.|| |Preliminary [short] data sheet<br>Qualifcation<br>This document contains data from the preliminary specifcation.|| |Product [short] data sheet<br>Production<br>This document contains the product specifcation.|| [1] Please consult the most recently issued document before initiating or completing a design. [2] [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. ## **11.2** **Draft —** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Short data sheet —** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. ## **11.3 Disclaimers** **General —** Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. **Right to make changes —** NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Suitability for use —** NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. **Applications —** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. **Limiting values —** the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. **Terms and conditions of sale —** NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. **No offer to sell or license —** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. **Export control —** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. **Quick reference data —** The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. ## **11.4 Trademarks** Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. ## **12. Contact information** For more information, please visit: **http://www.nxp.com** **salesaddresses@nxp.com** © NXP B.V. 2009. All rights reserved. 2N7002CK_1 **Rev. 01 — 11 September 2009** **Product data sheet** **12 of 13** **2N7002CK** **NXP Semiconductors** **60 V, 0.3 A N-channel Trench MOSFET** ## **13. Contents** |**1**|**Product profle . . . . . . . . . . . . . . . . . . . . . . . . . . 1**| |---|---| |1.1|General description. . . . . . . . . . . . . . . . . . . . . . 1| |1.2|Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.4|Quick reference data. . . . . . . . . . . . . . . . . . . . . 1| |**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . 2**| |**3**|**Ordering information . . . . . . . . . . . . . . . . . . . . . 2**| |**4**|**Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2**| |**5**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |**6**|**Thermal characteristics. . . . . . . . . . . . . . . . . . . 4**| |**7**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5**| |**8**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9**| |**9**|**Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**| |**10**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11**| |**11**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . 12**| |11.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12| |11.2|Defnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |11.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |11.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |**12**|**Contact information. . . . . . . . . . . . . . . . . . . . . 12**| |**13**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**| **==> picture [151 x 121] intentionally omitted <==** Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. **© NXP B.V. 2009.** **All rights reserved.** For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 11 September 2009 Document identifier: 2N7002CK_1**
Updated at February 9, 2023
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When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
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We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →