2N7002

**DATA SHEET www.onsemi.com** 

## N-Channel Enhancement Mode Field Effect Transistor 

## 2N7000, 2N7002, NDS7002A 

## **Description** 

These N−channel enhancement mode field effect transistors are produced using **onsemi’s** proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mAdc and can deliver pulsed currents up to 2 A. These products are particularly suited for low−voltage, low−current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. 

## **Features** 

- High Density Cell Design for Low RDS(on) 

- Voltage Controlled Small Signal Switch 

- Rugged and Reliable 

- High Saturation Current Capability 

- This Device is Pb−Free and Halogen Free 

**==> picture [192 x 205] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>G<br>S<br>1<br>1 2 2<br>3 3<br>TO−92 TO−92<br>CASE 135AN CASE 135AR<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

**==> picture [105 x 105] intentionally omitted <==**

**----- Start of picture text -----**<br>
$Y&Z&3<br>2N<br>7000<br>$Y = Logo<br>&Z = Assembly Plant Code<br>&3 = Date Code<br>2N7000 =  Specific Device Code<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

**==> picture [172 x 100] intentionally omitted <==**

**----- Start of picture text -----**<br>
&E&Y<br>7x2&E&G<br>&E = Designates Space<br>&Y = Binary Calendar Year<br>SOT−23 Coding Scheme<br>CASE 318−08 7x2 = Specific Device Code<br>x= 0, 1<br>&G = Date Code<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 7 of this data sheet. 

Publication Order Number: **NDS7002A/D** 

**1** 

© Semiconductor Components Industries, LLC, 1998 **August, 2021 − Rev. 5** 

**2N7000, 2N7002, NDS7002A** 

## **ABSOLUTE MAXIMUM RATINGS** Values are at TC = 25 ° C unless otherwise noted. 

|**ABSOLUTE**|**MAXIMUM RATINGS**Values are at TC= 25°C unless otherwise|noted.|noted.|noted.||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|||**Unit**|
|||**2N7000**|**2N7002**|**NDS7002A**||
|VDSS|Drain−to−Source Voltage|60|||V|
|VDGR|Drain−Gate Voltage (RGS ≤1 MW)|60|||V|
|VGSS|Gate−Source Voltage − Continuous|±20|||V|
||Gate−Source Voltage − Non Repetitive (tp < 50 ms)|±40||||
|ID|Maximum Drain Current − Continuous|200|115|280|mA|
||Maximum Drain Current − Pulsed|500|800|1500||
|PD|Maximum Power Dissipation Derated above 25°C|400|200|300|mW|
|||3.2|1.6|2.4|mW/°C|
|TJ, TSTG|Operating and Storage Temperature Range|−55 to 150||−65 to 150|°C|
|TL|Maximum Lead Temperature for Soldering Purposes,<br>1/16−inch from Case for 10 s|300|||°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

**THERMAL CHARACTERISTICS** Values are at TC = 25 ° C unless otherwise noted. 

|**THERMAL C**|**HARACTERISTICS**Values are at TC= 25°C unless otherwise n|oted.||||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**||**Value**||**Unit**|
|||**2N7000**|**2N7002**|**NDS7002A**||
|RθJA|Thermal Resistance, Junction to Ambient|312.5|625|417|°C/W|



## **ELECTRICAL CHARACTERISTICS** 

Values are at TC = 25 ° C unless otherwise noted. 

|**Symbol**|**Parameter**|**Conditions**|**Type**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|**OFF CHARACTERISTICS**||||||||
|BVDSS|Drain−Source Breakdown<br>Voltage|VGS= 0 V, ID= 10�A|All|60|−|−|V|
|IDSS|Zero Gate Voltage Drain<br>Current|VDS= 48 V, VGS= 0 V|2N7000|−|−|1|�A|
|||VDS= 48 V, VGS= 0 V,<br>TC= 125°C||−|−|1|mA|
|||VDS= 60 V, VGS= 0 V|2N7002<br>NDS7002A|−|−|1|�A|
|||VDS= 60 V, VGS= 0 V,<br>TC= 125°C||−|−|0.5|mA|
|IGSSF|Gate − Body Leakage,<br>Forward|VGS= 15 V, VDS= 0 V|2N7000|−|−|10|nA|
|||VGS= 20 V, VDS= 0 V|2N7002<br>NDS7002A|−|−|100||
|IGSSR|Gate − Body Leakage,<br>Reverse|VGS= −15 V, VDS= 0 V|2N7000|−|−|−10|nA|
|||VGS= −20 V, VDS= 0 V|2N7002<br>NDS7002A|−|−|−100||
|**ON CHARACTERISTICS**||||||||
|VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= 1 mA|2N7000|0.8|2.1|3|V|
|||VDS= VGS, ID= 250�A|2N7002<br>NDS7002A|1|2.1|2.5||



**www.onsemi.com** 

**2** 

**2N7000, 2N7002, NDS7002A** 

## **ELECTRICAL CHARACTERISTICS** (continued) 

Values are at TC = 25 ° C unless otherwise noted. 

|**Symbol**|**Parameter**|**Conditions**|**Type**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|**ON CHARACTERISTICS**||||||||
|RDS(on)|Static Drain−Source<br>On−Resistance|VGS= 10 V, ID= 500 mA|2N7000|−|1.2|5|�|
|||VGS= 10 V, ID= 500 mA,<br>TC= 125°C||−|1.9|9||
|||VGS= 4.5 V, ID= 75 mA||−|1.8|5.3||
|||VGS= 10 V, ID= 500 mA|2N7002|−|1.2|7.5||
|||VGS= 10 V, ID= 500 mA,<br>TC= 100°C||−|1.7|13.5||
|||VGS= 5 V, ID= 50 mA||−|1.7|7.5||
|||VGS= 5 V, ID= 50 mA,<br>TC= 100°C||−|2.4|13.5||
|||VGS= 10 V, ID= 500 mA|NDS7002A|−|1.2|2||
|||VGS= 10 V, ID= 500 mA,<br>TC= 125°C||−|2|3.5||
|||VGS= 5 V, ID= 50 mA||−|1.7|3||
|||VGS= 5 V, ID= 50 mA,<br>TC= 125°C||−|2.8|5||
|VDS(on)|Drain−Source On−Voltage|VGS= 10 V, ID= 500 mA|2N7000|−|0.6|2.5|V|
|||VGS= 4.5 V, ID= 75 mA||−|0.14|0.4||
|||VGS= 10 V, ID= 500 mA|2N7002|−|0.6|3.75||
|||VGS= 5.0 V, ID= 50 mA||−|0.09|1.5||
|||VGS= 10 V, ID= 500 mA|NDS7002A|−|0.6|1||
|||VGS= 5.0 V, ID= 50 mA||−|0.09|0.15||
|ID(on)|On−State Drain Current|VGS= 4.5 V, VDS= 10 V|2N7000|75|600|−|mA|
|||VGS= 10 V, VDS ≥ 2 VDS(on)|2N7002|500|2700|−||
|||VGS= 10 V, VDS ≥ 2 VDS(on)|NDS7002A|500|2700|−||
|gFS|Forward Transconductance|VDS= 10 V, ID= 200 mA|2N7000|100|320|−|mS|
|||VDS ≥ 2 VDS(on),ID= 200 mA|2N7002|80|320|−||
|||VDS ≥ 2 VDS(on), ID= 200 mA|NDS7002A|80|320|−||
|**DYNAMIC CHARACTERISTICS**||||||||
|Ciss|Input Capacitance|VDS= 25 V, VGS= 0 V,<br>f = 1.0 MHz|All|−|20|50|pF|
|Coss|Output Capacitance||All|−|11|25||
|Crss|Reverse Transfer<br>Capacitance||All|−|4|5||
|ton|Turn−On Time|VDD= 15 V, RL= 25�,<br>ID= 500 mA, VGS= 10 V,<br>RGEN= 25�|2N7000|−|−|10|ns|
|||VDD= 30 V, RL= 150�,<br>ID= 200 mA, VGS= 10 V,<br>RGEN= 25�|2N7002<br>NDS7002A|−|−|20||
|toff|Turn−Off Time|VDD= 15 V, RL= 25�,<br>ID= 500 mA, VGS= 10 V,<br>RGEN= 25�|2N7000|−|−|10|ns|
|||VDD= 30 V, RL= 150�,<br>ID= 200 mA, VGS= 10 V,<br>RGEN= 25�|2N7002<br>NDS7002A|−|−|20||



**www.onsemi.com** 

**3** 

**2N7000, 2N7002, NDS7002A** 

## **ELECTRICAL CHARACTERISTICS** (continued) 

Values are at TC = 25 ° C unless otherwise noted. 

|**Symbol**|**Parameter**|**Conditions**|**Type**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|**DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS**||||||||
|IS|Maximum Continuous Drain−Source Diode Forward Current||2N7002|−|−|115|mA|
||||NDS7002A|−|−|280||
|ISM|Maximum Pulsed Drain−Source|Diode Forward Current|2N7002|−|−|0.8|A|
||||NDS7002A|−|−|1.5||
|VSD|Drain−Source Diode<br>Forward Voltage|VGS= 0 V, IS= 115 mA<br>(Note 1)|2N7002|−|0.88|1.5|V|
|||VGS= 0 V, IS= 400 mA<br>(Note 1)|NDS7002A|−|0.88|1.2||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse test: Pulse Width ≤ 300 � s, Duty Cycel ≤ 2 % 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

**==> picture [489 x 388] intentionally omitted <==**

**----- Start of picture text -----**<br>
2 3<br>VGS = 10 V 9.0 V = 4.0<br>8.0 7.0 4.5<br>2.5<br>1.5 5.0<br>6.0 6.0<br>7.0<br>2<br>1 8.0<br>5.0<br>1.5<br>9.0<br>4.0 10<br>0.5<br>1<br>3.0<br>0 0.5<br>0 1 2 3 4 5 0 0.4 0.8 1.2 1.6 2<br>VDS, Drain−Source Voltage (V) ID, Drain Current (A)<br>Figure 1. On−Region Characteristics Figure 2. On−Resistance Variation with<br>Gate Voltage and Drain Current<br>2 3<br>VGS = 10 V VGS<br>1.75 2.5<br>ID = 500 mA<br>TJ = 125 ° C<br>1.5 2<br>1.25 1.5<br>25 ° C<br>1 1<br>−55 ° C<br>0.75 0.5<br>0.5 0<br>−50 −25 0 25 50 75 100 125 150 0 0.4 0.8 1.2 1.6 2<br>TJ, Junction Temperature ( � C) ID, Drain Current (A)<br>, Normalized<br>DS(on)<br>R<br>, Drain−Source Current (A)<br>ID Drain−Source On−Resistance<br>, Normalized<br>, Normalized<br>DS(on)<br>R DS(on)<br>R<br>Drain−Source On−Resistance<br>Drain−Source On−Resistance<br>**----- End of picture text -----**<br>


**Figure 3. On−Resistance Variation with Temperature** 

**Figure 4. On−Resistance Variation with Drain Current and Temperature** 

**www.onsemi.com** 

**4** 

**2N7000, 2N7002, NDS7002A** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (Continued) 

**==> picture [489 x 616] intentionally omitted <==**

**----- Start of picture text -----**<br>
2 25 ° C 1.1<br>VDS = 10 V VDS = VGS<br>1.6 1.05 I = 1 mA<br>125 ° C<br>1.2 T = −55 ° C 1<br>0.95<br>0.8<br>0.9<br>0.4<br>0.85<br>0 0.8<br>0 2 4 6 8 10 −50 −25 0 25 50 75 100 125 150<br>VGS, Gate to Source Voltage (V) TJ, Junction Temperature ( � C)<br>Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with<br>Temperature<br>1.100 2<br>VGS = 0 V<br>ID = 250  � A 1<br>1.075<br>0.5<br>1.050<br>T = 125 ° C 25 ° C<br>0.1<br>1.025<br>0.05<br>1.000<br>−55 ° C<br>0.01<br>0.975<br>0.005<br>0.950<br>0.925 0.001<br>−50 −25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1 1.2 1.4<br>TJ, Junction Temperature ( � C) VSD, Body Diode Forward Voltage (V)<br>Figure 7. Breakdown Voltage Variation with Figure 8. Body Diode Forward Voltage<br>Temperature Variation with<br>60 10<br>40 VDS = 25 V<br>Ciss 8<br>20<br>Coss 6<br>10<br>I = 500 mA<br>4<br>5<br>Crss<br>280 mA<br>2<br>2<br>f = 1 MHz 115 mA<br>V = 0 V<br>1 0<br>1 2 3 5 10 20 30 50 0 0.4 0.8 1.2 1.6 2<br>VDS, Drain to Source Voltage (V) Qg, Gate Charge (nC)<br>, Drain Current (A)<br>ID Threshold Voltage<br>, Normalized Gate−Source<br>th<br>V<br>, Normalized<br>DSS<br>BV<br>, Reverse Drain Current (A)<br>IS<br>Drain−Source Breakdown Voltage<br>Capacitance (pF)<br>, GA E−Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 9. Capacitance Characteristics** 

**Figure 10. Gate Charge Characteristics** 

**www.onsemi.com** 

**5** 

**2N7000, 2N7002, NDS7002A** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (Continued) 

**==> picture [485 x 565] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD ton toff<br>VIN RL td(on) tr td(off ) tf<br>90% 90%<br>D VOUT<br>VGS Output, Vout 10% 10%<br>RGEN G DUT Inverted<br>90%<br>S Input, Vin 50% 50%<br>10%<br>Pulse Width<br>Figure 11. Switching Test Circuit Figure 12. Switching Waveforms<br>3 3<br>2 2<br>1 1 100  � s<br>0.5 RDS(on) Limit 100  � s 0.5 RDS(on) Limit<br>1 ms 1 ms<br>0.1 0.1<br>100 ms 10 ms 100 ms 10 ms<br>0.05 0.05<br>1 s<br>VGS = 10 V 10 s VGS = 10 V<br>0.01 Single Pulse TA = 25 ° C DS 0.01 Single Pulse TA = 25 ° C DC 10 s 1 s<br>0.005 0.005<br>1 2 5 10 20 30 60 80 1 2 5 10 20 30 60 80<br>VDS, Drain−Source Voltage (V) VDS, Drain−Source Voltage (V)<br>Figure 13. 2N7000 Maximum Safe Operating Area Figure 14. 2N7002 Maximum Safe Operating Area<br>3<br>2 R DS(on)  Limit 100  � s<br>1<br>1 ms<br>0.5<br>10 ms<br>0.1<br>100 ms<br>0.05<br>1 s<br>VGS = 10 V<br>Single Pulse DC 10 s<br>0.01 TA = 25 ° C<br>0.005<br>1 2 5 10 20 30 60 80<br>VDS, Drain−Source Voltage (V)<br>, Drain Current (A) , Drain Current (A)<br>ID ID<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 15. NDS7000A Maximum Safe Operating Area** 

**www.onsemi.com** 

**6** 

**2N7000, 2N7002, NDS7002A** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (Continued) 

**==> picture [488 x 381] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>D = 0.5<br>0.5<br>0.2<br>0.2 R � JA [(t)]  = r(t) * R � JA<br>0.1 R � JA = (See Datasheet)<br>0.1<br>0.05 P(pk)<br>0.05<br>0.02 t1<br>t2<br>0.02 0.01 TJ − TA = P  *  R � JA [(][t][)]<br>Single Pulse Duty Cycle, D = t1/t2<br>0.01<br>0.0001 0.001 0.01 0.1 1 10 100 300<br>t1, Time (s)<br>Figure 16. TO−92, 2N7000 Transient Thermal Response Curve<br>1<br>0.5<br>D = 0.5<br>0.2<br>0.2<br>0.1 0.1 R � JA [(t)]  = r(t) * R � JA<br>R � JA = (See Datasheet)<br>0.05 0.05<br>0.02 P(pk)<br>0.01 0.01 t1<br>t2<br>TJ − TA = P * R � JA [(t)]<br>0.002 Single Pulse Duty Cycle, D = t1/t2<br>0.001<br>0.0001 0.001 0.01 0.1 1 10 100 300<br>t1, Time (s)<br>r(t), Normalized Effective<br>Transient Thermal Resistance<br>r(t), Normalized Effective<br>Transient Thermal Resistance<br>**----- End of picture text -----**<br>


**Figure 17. SOT−23, 2N7002 / NDS7002A Transient Thermal Response Curve** 

**ORDERING INFORMATION** 

|**Part Number**|**Marking**|**Package**|**Packing Method**†|**Min Order Qty /**<br>**Immediate Pack Qty**|
|---|---|---|---|---|
|2N7000|2N7000|TO−92 3L<br>(Pb−Free)|Bulk|10000 / 1000|
|2N7000−D74Z|||Ammo|2000 / 2000|
|2N7000−D75Z|||Tape and Reel|2000 / 2000|
|2N7000−D26Z||||2000 / 2000|
|2N7002|702|SOT−23 3L<br>(Pb−Free)|Tape and Reel|3000 / 3000|
|NDS7002A|712|||3000 / 3000|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**www.onsemi.com** 

**7** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−92 3 4.825x4.76** CASE 135AN ISSUE O 

DATE 31 JUL 2016 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13880G** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: TO−92 3 4.825X4.76 PAGE 1 OF 1** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−92 3 4.83x4.76 LEADFORMED** CASE 135AR ISSUE O 

DATE 30 SEP 2016 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13879G** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**==> picture [494 x 668] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT−23 (TO−236)<br>CASE 318−08<br>ISSUE AS<br>2 DATE 30 JAN 2018<br>SCALE 4:1<br>D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>“a 3 t = THE BASE MATERIAL.<br>| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>= T 0 ° −−− 10 ° 0 ° −−− 10 °<br>a A1 SIDE VIEW SEE VIEW C c<br>GENERIC<br>END VIEW<br>MARKING DIAGRAM*<br>RECOMMENDED<br>SOLDERING FOOTPRINT XXXM<br>1<br>2.90 i 0.903X XXX = Specific Device Code oo<br>M = Date Code<br>= Pb−Free Package<br>LO | cr ,<br>*This information is generic. Please refer to<br>3X 0.80 a) LL 0.95 device data sheet for actual part marking.<br>PITCH Pb−Free indicator, “G” or microdot “ ”, |<br>DIMENSIONS: MILLIMETERS may or may not be present.<br>STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:<br>CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE<br>2. EMITTER 2. BASE 2. NO CONNECTION<br>3. COLLECTOR 3. COLLECTOR 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:<br>PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE<br>2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE<br>3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE<br>STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:<br>PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE<br>2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE<br>3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE<br>STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:<br>PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE<br>2. SOURCE 2. OUTPUT 2. ANODE  2. DRAIN  2. CATHODE  2. ANODE<br>3. DRAIN 3. INPUT 3. CATHODE  3. SOURCE  3. GATE  3. NO CONNECTION<br>STYLE 27: STYLE 28:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. CATHODE  2. ANODE<br> 3. CATHODE  3. ANODE<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42226B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 1<br>aes<br>ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.<br>ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding<br>the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically<br>disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the<br>rights of others.<br>**----- End of picture text -----**<br>


www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative 

◊ 

**==> picture [232 x 43] intentionally omitted <==**