2N7002-7-F

CY 

**2N7002** 

**N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR** 

## **Product Summary** 

|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**|
|---|---|---|
|60V|5Ω @ VGS= 10V|210mA|
||7.5Ω @ VGS= 5V|170mA|



## **Features and Benefits** 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- • Fast Switching Speed 

- Small Surface-Mount Package 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.** 

   - **https://www.diodes.com/quality/product-definitions/** 

- **An automotive-compliant part is available under separate datasheet (2N7002Q)** 

## **Description and Applications** 

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. 

## **Mechanical Data** 

   - Package: SOT23 

   - Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- Motor controls 

- Power-management functions 

- Terminals: Finish ⎯ Matte Tin Plated Leads. Solderable per MILSTD-202, Method 208 **e3** 

- Terminal Connections: See Diagram 

- Weight: 0.009 grams (Approximate) 

**==> picture [331 x 116] intentionally omitted <==**

**----- Start of picture text -----**<br>
Drain<br>SOT23 (Standard)<br>D<br>ey Gate G S<br>Source<br>Top View  Equivalent Circuit  Top View<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)||||
|---|---|---|---|
|**Part Number**|**Package**|**Packing**||
|||**Qty. **|**Carrier**|
|2N7002-7-F|SOT23(Standard)|3,000|Tape & Reel|
|2N7002-13-F|SOT23(Standard)|10,000|Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

K72 = Product Type Marking Code YM = Date Code Marking **K72** Y or Y or Y = Year (ex: L = 2024) M or M = Month (ex: 9 = September) Date Code Key **Year 2002 - 2024 2025 2026 2027 2028 2029 2030 2031 2032 2033 Code** N - L M N P R S T U V W **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~——ee~~ **Code** 1 2 3 4 5 6 7 8 9 O N D 2N7002 1 of 5 July 2024 Document number: DS11303 Rev. 40 - 2 **www.diodes.com** ©  2024 Copyright Diodes Incorporated. All Rights Reserved. 

**2N7002** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|60|V|
|Drain-Gate Voltage RGS1.0MΩ|||VDGR|60|V|
|Gate-Source Voltage||Continuous<br>Pulsed (Note 8)|VGSS|±20<br>±40|V|
|Continuous Drain Current (Note 5) VGS= 10V|Steady State|TA= +25°C<br>TA= +85°C<br>TA= +100°C|ID|170<br>120<br>105|mA|
|Continuous Drain Current (Note 6) VGS= 10V|Steady State|TA= +25°C<br>TA= +85°C<br>TA= +100°C|ID|210<br>150<br>135|mA|
|Maximum Continuous Body Diode Forward Current (Note 6)||Continuous<br>Pulsed (Note 8)|IS|0.2<br>0.5|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|800|mA|



## **Thermal Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation|(Note 5)|PD|370|mW|
||(Note 6)||540||
|Thermal Resistance, Junction to Ambient|(Note 5)|RθJA|348|°C/W|
||(Note 6)||241||
|Thermal Resistance,Junction to Case|(Note 6)|RθJC|91||
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||||
|---|---|---|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**<br>~~ODQO~~<br>~~(QO~~||||||||
|Drain-Source Breakdown Voltage<br>~~GS~~||BVDSS<br>~~GS~~|60<br>~~GS~~<br>~~OD~~|70<br>~~GS~~<br>~~QO~~|⎯<br>~~GS~~<br>~~(QO~~|V<br>~~GS~~<br>~~(QO~~|VGS= 0V,ID= 10µA<br>~~GS~~<br>~~(QO~~|
|Zero Gate Voltage Drain Current<br>~~BO~~|@ TJ= +25°C<br>@TJ= +125°C<br>~~BO~~|IDSS<br>~~BO~~|⎯<br>⎯<br>~~OD~~<br>~~BO~~|⎯<br>⎯<br>~~QO~~<br>~~BO~~<br>~~GO~~|1.0<br>500<br>~~(QO~~<br>~~BO~~<br>~~I~~|µA<br>~~(QO~~<br>~~BO~~<br>~~(~~|VDS= 60V, VGS= 0V<br>~~(QO~~<br>~~BO~~<br>~~(~~|
|Gate-BodyLeakage<br>~~DD~~||IGSS<br>~~DD~~|⎯<br>~~DD~~|⎯<br>~~DD~~<br>~~GO~~|±10<br>~~DD~~<br>~~I~~|nA<br>~~DD~~<br>~~(~~|VGS= ±20V,VDS= 0V<br>~~DD~~<br>~~(~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~GO~~<br>~~I ( (~~<br>~~DO~~<br>~~(O(n~~||||||||
|Gate Threshold Voltage<br>~~DO~~<br>~~ee~~||VGS(TH)<br>~~DO~~|1.0<br>~~DO~~|⎯<br>~~DO~~<br>~~ee~~|2.5<br>~~(O(n~~<br>~~ee~~|V<br>~~(O(n~~<br>~~ee~~|VDS= VGS,ID= 250µA<br>~~(O(n~~<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~DO~~<br>~~es~~|@ TJ= +25°C<br>@ TJ= +25°C<br>@TJ= +125°C<br>~~DO~~<br>~~es~~<br>~~ee~~|RDS(ON)<br>~~DO~~<br>~~es~~|⎯<br>⎯<br>⎯<br>~~DO~~<br>~~es~~|3.2<br>2.4<br>4.4<br>~~DO~~<br>~~es~~<br>~~ee~~|7.5<br>5.0<br>13.5<br>~~(O(n~~<br>~~es~~<br>~~ee~~|Ω<br>~~(O(n~~<br>~~es~~<br>~~ee~~|VGS= 5.0V,ID= 0.05A<br>~~(O(n~~<br>~~es~~<br>~~ee~~|
||||||||VGS= 10V, ID= 0.5A<br>VGS= 10V,ID= 0.5A<br>~~es~~<br>~~ee~~|
|On-State Drain Current<br>~~es~~<br>~~ee~~<br>~~ee~~||ID(ON)<br>~~es~~<br>~~ee~~|0.5<br>~~es~~<br>~~ee~~|1.0<br>~~es~~<br>~~ee~~<br>~~ee~~|⎯<br>~~es~~<br>~~ee~~<br>~~ee~~|A<br>~~es~~<br>~~ee~~<br>~~ee~~|VGS= 10V,VDS= 7.5V<br>~~es~~<br>~~ee~~<br>~~ee~~|
|Forward Transconductance<br>~~ee~~<br>~~ee~~||gFS<br>~~ee~~|80<br>~~ee~~|⎯<br>~~ee~~<br>~~ee~~|⎯<br>~~ee~~<br>~~ee~~|mS<br>~~ee~~<br>~~ee~~|VDS= 10V,ID= 0.2A<br>~~ee~~<br>~~ee~~|
|Diode Forward Voltage<br>~~ee~~||VSD<br>~~ee~~|⎯<br>~~ee~~|0.78<br>~~ee~~|1.5<br>~~ee~~|V<br>~~ee~~|VGS= 0V,IS= 115mA<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~|~~||||||||
|Input Capacitance<br>~~———————~~||Ciss<br>~~———————~~|⎯<br>~~———————~~|22<br>~~———————~~|50<br>~~———————~~|pF<br>~~———————~~|VDS= 25V, VGS= 0V<br>f = 1.0MHz<br>~~———————~~|
|Output Capacitance<br>~~———————~~||Coss<br>~~———————~~|⎯<br>~~———————~~|11<br>~~———————~~|25<br>~~———————~~|pF<br>~~———————~~||
|Reverse Transfer Capacitance<br>~~———————~~||Crss<br>~~———————~~|⎯<br>~~———————~~|2.0<br>~~———————~~|5.0<br>~~———————~~|pF<br>~~———————~~||
|Gate Resistance<br>~~a~~<br>~~——_——~~||Rg<br>~~a~~<br>~~ee~~|⎯<br>~~a~~|120<br>~~a~~|⎯<br>~~a~~<br>~~ee~~|Ω<br>~~a~~<br>~~ee~~|VDS= 0V, VGS= 0V<br>f = 1.0MHz<br>~~a~~<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~a~~<br>~~———~~<br>~~——_——~~||Qg<br>~~a~~<br>~~———~~<br>~~ee~~|⎯<br>~~a~~<br>~~———~~|223<br>~~a~~<br>~~———~~|⎯<br>~~a~~<br>~~———~~<br>~~ee~~|pC<br>~~a~~<br>~~———~~<br>~~ee~~|VDS= 10V, ID= 250mA<br>~~a~~<br>~~———~~<br>~~ee~~|
|Gate-Source Charge<br>~~———~~<br>~~——_——~~||Qgs<br>~~———~~<br>~~ee~~|⎯<br>~~———~~|82<br>~~———~~|⎯<br>~~———~~<br>~~ee~~|||
|Gate-Drain Charge<br>~~———~~<br>~~——_——~~||Qgd<br>~~———~~<br>~~ee~~|⎯<br>~~———~~|178<br>~~———~~|⎯<br>~~———~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~———~~<br>~~——_——~~||tD(ON)<br>~~———~~<br>~~ee~~|⎯<br>~~———~~|2.8<br>~~———~~|⎯<br>~~———~~<br>~~ee~~|ns<br>~~———~~<br>~~ee~~|VDD= 30V, ID= 0.2A <br>RL= 150Ω, VGEN= 10V<br>RGEN= 25Ω<br>~~———~~<br>~~ee~~|
|Turn-On Rise Time<br>~~——_——~~||tR<br>~~ee~~|⎯|3.0|⎯<br>~~ee~~|||
|Turn-Off DelayTime<br>~~——_——~~||tD(OFF)<br>~~ee~~|⎯|7.6|⎯<br>~~ee~~|||
|Turn-Off Fall Time<br>~~——_——~~||tF<br>~~ee~~|⎯|5.6|⎯<br>~~ee~~|||



2N7002 Document number: DS11303 Rev. 40 - 2 

**2N7002** 

**==> picture [480 x 662] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0 7<br>6<br>0.8<br>5<br>0.6<br>4<br>3<br>0.4<br>2<br>0.2 ° Zea | _f fer<br>1<br>—— CT<br>0 LS 0 TT<br>0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0<br>VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Fig. 1  On-Region Characteristics Fig. 2  On-Resistance vs. Drain Current<br>3.0 6<br>5<br>2.5 FELLA WA<br>4<br>ID = 500mA<br>2.0 TTA 3 A I D  = 50mA TTT<br>Va 2 BA \CHEREE<br>1.5 ALLL ae aeee<br>VGS = 10V, 1<br>ID = 200mA<br>1.0 ATT 0 Le<br>-55 VA -30 -5 20 45 70 95 120 145 0 PLE 2 4 6 EEL 8 10 12 ELL 14 16 18<br>T , JUNCTION TEMPERATURE (j °C) VGS, GATE TO SOURCE VOLTAGE (V)<br>Fig. 3  On-Resistance vs. Junction Temperature Fig. 4  On-Resistance vs. Gate-Source Voltage<br>10 400<br>9<br>350<br>8<br>IATTICTOOTUUOUOOGOGGOTITE eee<br>300<br>7<br>SECERAAOUUUUEEERRAROGREEL 250 RET TPT<br>6<br>5 SUUAAAARROU CE TTT ae 200 |<br>Ua wriand On0 ERNE<br>4<br>TTT eegre 150 ~T EXT TET 4<br>3<br>100<br>2 HVHHHDOSEscecanHMOAUUE TP INCE]<br>50<br>1 TLCCCCCECCHTHEELE TIN<br>0 BEAAAREEARAOREERAUDEOONEE 0 TEEN|<br>0 0.2 0.4 0.6 0.8 1 0 25 50 75 100 125 150 175 200<br>ID, DRAIN CURRENT (A) TA, AMBIENT TEMPERATURE (°C)<br>Fig. 5  Typical Transfer Characteristics Fig. 6  Max Power Dissipation vs. Ambient Temperature<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>R<br>DS(ON)<br>, DRAIN-SOURCE CURRENT (A)<br>ID<br> GATE SOURCE CURRENT (V)<br>GS,<br>V<br>)<br>ON-RESISTANCE (<br>, NORMALIZED DRAIN-SOURCE<br>R<br>DS(ON)<br>)<br>ON-RESISTANCE (<br>, NORMALIZED DRAIN-SOURCE<br>R<br>DS(ON)<br>, POWER DISSIPATION (mW)<br>d<br>P<br>**----- End of picture text -----**<br>


3 of 5 **www.diodes.com** 

2N7002 Document number: DS11303 Rev. 40 - 2 

July 2024 

©  2024 Copyright Diodes Incorporated. All Rights Reserved. 

**2N7002** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT23 (Standard)** 

|A<br>A2<br>D<br>~~I=~~|A<br>A2<br>D<br>~~I=~~|A<br>A2<br>D<br>~~I=~~|A<br>A2<br>D<br>~~I=~~|A<br>A2<br>D<br>~~I=~~|A<br>A2<br>D<br>~~I=~~|A<br>A2<br>D<br>~~I=~~|A<br>A2<br>D<br>~~I=~~|A<br>A2<br>D<br>~~I=~~|A<br>A2<br>D<br>~~I=~~|A<br>A2<br>D<br>~~I=~~|A<br>A2<br>D<br>~~I=~~|A<br>A2<br>D<br>~~I=~~|A<br>A2<br>D<br>~~I=~~|A<br>A2<br>D<br>~~I=~~|A<br>A2<br>D<br>~~I=~~||||||||||||A1||**SOT23 (Standard)**|**SOT23 (Standard)**|**SOT23 (Standard)**|**SOT23 (Standard)**<br>GAUGE PLANE<br>0.25|**SOT23 (Standard)**<br>GAUGE PLANE<br>0.25|**SOT23 (Standard)**<br>GAUGE PLANE<br>0.25||**SOT23 (Standard)**<br>**Dim**<br>**Min**<br>**Max **<br>**Typ**<br>**A**<br>0.90<br>1.15<br>1.025<br>~~—~~|**SOT23 (Standard)**<br>**Dim**<br>**Min**<br>**Max **<br>**Typ**<br>**A**<br>0.90<br>1.15<br>1.025<br>~~—~~|**SOT23 (Standard)**<br>**Dim**<br>**Min**<br>**Max **<br>**Typ**<br>**A**<br>0.90<br>1.15<br>1.025<br>~~—~~|**SOT23 (Standard)**<br>**Dim**<br>**Min**<br>**Max **<br>**Typ**<br>**A**<br>0.90<br>1.15<br>1.025<br>~~—~~|**SOT23 (Standard)**<br>**Dim**<br>**Min**<br>**Max **<br>**Typ**<br>**A**<br>0.90<br>1.15<br>1.025<br>~~—~~|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||||||||b|||||||||||||c|L1||||L|a|||**A1**<br>**A2**<br>**b**|0.00<br>0.85<br>0.30|0.10<br>1.10<br>0.51|0.05<br>0.975<br>0.40|
||||||||||||||||||||||||||||||||||||||**c**|0.080|0.202|0.11|
||||||||||||||||||||||||||||||||||||||**D**|2.80|3.00|2.90|
||||||||||||||||||||||||||||||||||||||**E**|2.25|2.55|2.40|
||||||||||||||||||||||||||||||||||||||**E1**|1.20|1.40|1.30|
||||||||||||||||||||||||||||||||||||||**e**|0.89|1.03|0.915|
|E||E1|||||||||||||||||||||||||||||||||||**e1 **<br>**F**|1.78<br>0.40|2.05<br>0.60|1.83<br>0.535|
||||||||||||||||||||||||||||||||||||||**L1**|0.45|0.61|0.55|
||||||||||||||||||||||||||||||||||||||**L**|0.25|0.55|0.40|
||||||||||||||||||||||||||||||||||||||**a**|0°|8°|--|
||||||||||||||||||||||||||||||||||||||**All Dimensions in mm**|||**in mm**|
|||||||||||||||||||e|||||||||||||||||||||||
|||||||F|||||||||e1||||||||||||||||||||||||||



## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT23 (Standard)** 

**==> picture [136 x 123] intentionally omitted <==**

**----- Start of picture text -----**<br>
Y<br>Y1 Oo C<br>ob X X1<br>**----- End of picture text -----**<br>


**==> picture [108 x 57] intentionally omitted <==**

**----- Start of picture text -----**<br>
Dimensions Value (in mm)<br>C 2.0<br>X  0.8<br>X1  1.35<br>Y  0.9<br>Y1  2.9<br>**----- End of picture text -----**<br>


4 of 5 **www.diodes.com** 

2N7002 Document number: DS11303 Rev. 40 - 2 

July 2024 

©  2024 Copyright Diodes Incorporated. All Rights Reserved. 

**2N7002** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes’ products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes’ products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes’ products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

9. This Notice may be periodically updated with the most recent version available at https://www.diodes.com/about/company/terms-andconditions/important-notice 

The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries. All other trademarks are the property of their respective owners. 

©  2024 Diodes Incorporated. All Rights Reserved. 

**www.diodes.com** 

5 of 5 **www.diodes.com** 

2N7002 Document number: DS11303 Rev. 40 - 2 

July 2024 

©  2024 Copyright Diodes Incorporated. All Rights Reserved.