2N7000G
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole
- Manufacturer: ONSEMI
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissi
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 350mW
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-92
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 200mA
- Drain Source On State Resistance: 5ohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 20000 |
| Price | 0.045 € |
| Current stock | 10+ |
| Lead time | 30 days |
2N7000G ## Small Signal MOSFET 200 mAmps, 60 Volts **N−Channel TO−92** ## **Features** ## **http://onsemi.com** - AEC Qualified |• AEC Qualified||||||| |---|---|---|---|---|---|---| |AEC Qualified<br>• PPAP Capable<br>• This is a Pb−Free Device*|||||**200 mAMPS**<br>**60 VOLTS**|| |**MAXIMUM RATINGS**<br>**Rating**<br>Drain Source Voltage<br>Drain−Gate Voltage (RGS= 1.0 M )<br>Gate−Source Voltage<br>− Continuous<br>− Non−repetitive (tp ≤50 s)<br>Drain Current<br>− Continuous<br>− Pulsed<br>Total Power Dissipation @ TC= 25°C<br>Derate above 25°C|**Symbol**<br>VDSS<br>VDGR<br>VGS<br>VGSM<br>ID<br>IDM<br>PD|**Value**<br>60<br>60<br>±20<br>±40<br>200<br>500<br>350<br>2.8|**Unit**<br>Vdc<br>Vdc<br>Vdc<br>Vpk<br>mAdc<br>mW<br>mW/°C||D<br>G<br>**N−Channel**<br>S<br>**RDS(on) = 5**<br>**TO−92**<br>**CASE 29**<br>**STYLE 22**~~:~~|| |Operating and Storage Temperature<br>Range|TJ, Tstg|−55 to +150|°C||1 23|1 2<br>3| |**THERMAL CHARACTERISTICS**|||||STRAIGHT LEAD|BENT LEAD| |**Characteristic**|**Symbol**|**Max**|**Unit**||BULK PACK|TAPE & REEL<br>AMMO PACK| - PPAP Capable - This is a Pb−Free Device* |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Thermal Resistance, Junction−to−Ambient|R JA|357|°C/W| |Maximum Lead Temperature for<br>Soldering Purposes, 1/16″from case<br>for 10 seconds|TL|300|°C| ## **MARKING DIAGRAM AND PIN ASSIGNMENT** Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. **==> picture [111 x 126] intentionally omitted <==** **----- Start of picture text -----**<br> 2N<br>7000<br>AYWW<br>1 3<br>Source Drain<br>2<br>Gate<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>**----- End of picture text -----**<br> - (Note: Microdot may be in either location) ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. > *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2011 **April, 2011 − Rev. 8** **2N7000/D** **2N7000G** ## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS **(TC= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS **(TC= 25°C unless otherwise noted)||||| |---|---|---|---|---|---| |**Characteristic**||**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Drain−Source Breakdown Voltage<br>(VGS= 0, ID= 10�Adc)||V(BR)DSS|60|−|Vdc| |Zero Gate Voltage Drain Current<br>(VDS= 48 Vdc, VGS= 0)<br>(VDS= 48 Vdc, VGS= 0, TJ= 125°C)||IDSS|−<br>−|1.0<br>1.0|�Adc<br>mAdc| |Gate−Body Leakage Current, Forward<br>(VGSF= 15 Vdc, VDS= 0)||IGSSF|−|−10|nAdc| |**ON CHARACTERISTICS**(Note 1)|||||| |Gate Threshold Voltage<br>(VDS= VGS, ID= 1.0 mAdc)||VGS(th)|0.8|3.0|Vdc| |Static Drain−Source On−Resistance<br>(VGS= 10 Vdc, ID= 0.5 Adc)<br>(VGS= 4.5 Vdc, ID= 75 mAdc)||rDS(on)|−<br>−|5.0<br>6.0|�| |Drain−Source On−Voltage<br>(VGS= 10 Vdc, ID= 0.5 Adc)<br>(VGS= 4.5 Vdc, ID= 75 mAdc)||VDS(on)|−<br>−|2.5<br>0.45|Vdc| |On−State Drain Current<br>(VGS= 4.5 Vdc, VDS= 10 Vdc)||Id(on)|75|−|mAdc| |Forward Transconductance<br>(VDS= 10 Vdc, ID= 200 mAdc)||gfs|100|−|�mhos| |**DYNAMIC CHARACTERISTICS**|||||| |Input Capacitance|(VDS= 25 V, VGS= 0,<br>f = 1.0 MHz)|Ciss|−|60|pF| |Output Capacitance||Coss|−|25|| |Reverse Transfer Capacitance||Crss|−|5.0|| |**SWITCHING CHARACTERISTICS**(Note 1)|||||| |Turn−On Delay Time|(VDD= 15 V, ID= 500 mA,<br>RG= 25�, RL= 30�, Vgen= 10 V)|ton|−|10|ns| |Turn−Off Delay Time||toff|−|10|| 1. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |2N7000G|TO−92<br>(Pb−Free)|1000 Units / Bulk| |2N7000RLRAG|TO−92<br>(Pb−Free)|2000 Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **http://onsemi.com** **2** **2N7000G** **==> picture [490 x 393] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 1.0<br>1.8 T A = 25°C V DS = 10 V -�55°C 25°C<br>1.6 V GS = 10 V 0.8 125°C<br>1.4 9 V<br>1.2 0.6<br>8 V<br>1.0<br>7 V<br>0.8 0.4<br>6 V<br>0.6<br>5 V<br>0.4 0.2<br>0.2 4 V<br>3 V<br>0<br>0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10<br>VDS, DRAIN SOURCE VOLTAGE (VOLTS) VGS, GATE SOURCE VOLTAGE (VOLTS)<br>Figure 1. Ohmic Region Figure 2. Transfer Characteristics<br>2.4 1.2<br>2.2 1.05<br>2.0 VGS = 10 V 1.1 VDS = VGS<br>ID = 200 mA ID = 1.0 mA<br>1.8 1.10<br>1.6 1.0<br>1.4 0.95<br>1.2 0.9<br>1.0 0.85<br>0.8 0.8<br>0.6 0.75<br>0.4 0.7<br>-�60 -�20 +�20 +�60 +�100 +�140 -�60 -�20 +�20 +�60 +�100 +�140<br>T, TEMPERATURE (°C) T, TEMPERATURE (°C)<br>ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)<br>(NORMALIZED)<br>VGS(th), THRESHOLD VOLTAGE (NORMALIZED)<br>rDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE<br>**----- End of picture text -----**<br> **Figure 3. Temperature versus Static Drain−Source On−Resistance** **Figure 4. Temperature versus Gate Threshold Voltage** **http://onsemi.com** **3** **2N7000G** ## **PACKAGE DIMENSIONS** **TO−92 (TO−226)** CASE 29−11 ISSUE AM NOTES: **==> picture [377 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||||| |---|---|---|---|---|---|---|---|---|---|---| |A| |ea|e|aes|B|STRAIGHT LEAD|1.|DIMENSIONING AND TOLERANCING PER ANSI| |BULK PACK|Y14.5M, 1982.| |2.|CONTROLLING DIMENSION: INCH.| |R|3.|CONTOUR OF PACKAGE BEYOND DIMENSION R| |ian|IS UNCONTROLLED.| |4.|LEAD DIMENSION IS UNCONTROLLED IN P AND| |P|BEYOND DIMENSION K MINIMUM.| |L| |SEATING|INCHES|MILLIMETERS| |PLANE|K|DIM|MIN|MAX|MIN|MAX| |A|0.175|0.205|4.45|5.20| |B|0.170|0.210|4.32|5.33| |C|0.125|0.165|3.18|4.19| |D|0.016|0.021|0.407|0.533| |X|i|X|D|c|G|0.045|0.055|e|1.15|1.39| |G|H|0.095|0.105|2.42|2.66| |J|0.015|0.020|0.39|0.50| |F|H|J|||K|0.500|K+|---|12.70|---| |L|0.250|---|6.35|---| |V|C|N|0.080|0.105|2.04|2.66| |P|---|0.100|---|2.54| |SECTION X−X|R|0.115|---|2.93|---| |1|N|V|0.135|---|3.43|---| |N| **----- End of picture text -----**<br> ## NOTES: **==> picture [391 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> R a e A B BENT LEAD 1. DIMENSIONING AND TOLERANCING PER<br>TAPE & REEL ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>AMMO PACK 3. CONTOUR OF PACKAGE BEYOND<br>ia DIMENSION R IS UNCONTROLLED.<br>4. LEAD DIMENSION IS UNCONTROLLED IN P<br>P AND BEYOND DIMENSION K MINIMUM.<br>T<br>SEATINGPLANE K DIM MILLIMETERSMIN MAX<br>A 4.45 5.20<br>B 4.32 5.33<br>yt C 3.18 4.19<br>aii X X D GD 0.402.40 0.542.80<br>G J 0.39 0.50<br>J K 12.70 ---<br>N 2.04 2.66<br>“ L V e C of RP 1.502.93 4.00---<br>| | SECTION X−X “ fh = V 3.43 ---<br>1 N STYLE 22:<br>PIN 1. SOURCE<br>2. GATE<br>on<br>3. DRAIN<br>**----- End of picture text -----**<br> **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com **N. American Technical Support** : 800−282−9855 Toll Free USA/Canada **ON Semiconductor Website** : **www.onsemi.com** **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit Phone: 421 33 790 2910 **Japan Customer Focus Center** For additional information, please contact your local Phone: 81−3−5773−3850 Sales Representative **http://onsemi.com** **4** **2N7000/D**
Updated at March 10, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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